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1. 发明授权

US5561339A Field emission array magnetic sensor devices 失效
标题翻译：场发射阵列磁传感器装置
公开(公告)号：US5561339A
公开(公告)日：1996-10-01
申请号：US302109
申请日：1994-09-07
申请人： Gary W. Jones , Jong Kim , Steven M. Zimmerman
发明人： Gary W. Jones , Jong Kim , Steven M. Zimmerman
IPC分类号： G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00 , H01J1/16
CPC分类号： G02B27/017 , G01R33/10 , G02B27/0172 , G02B27/0176 , G02B27/2235 , G09G3/001 , H01J29/94 , H01J3/022 , H01J31/127 , H01J9/025 , H04N13/0422 , H04N13/0438 , H04N13/044 , H04N13/0459 , H04N13/0497 , H04N5/7408 , G02B2027/0132 , G02B2027/0136 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H04N13/0059 , H04N13/0285 , H04N13/0427 , H04N13/0456 , H04N5/70 , H04N5/7491
摘要： A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.
摘要翻译：一种场致发射阵列磁传感器（FEAMS）装置，包括：阳极; 基板构件在其第一侧上具有与阳极隔开的近似关系的多个门控场致发射体元件。多个选通场发射极元件和阳极结构被布置成使得每个门控场致发射元件根据门电场发射极元件上的磁场的强度而与电子发射的关系变化。该装置包括用于感测从多个选通场发射极元件接收电子的阳极结构电子冲击位置的位置的结构，以及确定磁场的强度和取向。还公开了可以有效地用于本发明的FEAMS装置中的各种阳极配置。

2. 发明授权

US5828163A Field emitter device with a current limiter structure 失效
标题翻译：具有限流器结构的场发射极器件
公开(公告)号：US5828163A
公开(公告)日：1998-10-27
申请号：US781289
申请日：1997-01-13
申请人： Gary W. Jones , Susan K. Jones , Jeffrey Marino , Joseph K. Ho , R. Mark Boysel , Steven M. Zimmerman , Yachin Liu , Michael J. Costa , Jeffrey A. Silvernail
发明人： Gary W. Jones , Susan K. Jones , Jeffrey Marino , Joseph K. Ho , R. Mark Boysel , Steven M. Zimmerman , Yachin Liu , Michael J. Costa , Jeffrey A. Silvernail
IPC分类号： H01J1/304 , H01J1/02
CPC分类号： H01J1/3042 , H01J2201/319 , H01J2329/00
摘要： A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4. An anode plate is attached with intermediate space between the anode plate and the microtip electron emitters being evacuated.
摘要翻译：场致发射器件包括列导体，绝缘体和电阻结构，用于有利地限制场发射器阵列中的电流。在绝缘基板上沉积宽的列导体。绝缘体放置在列导体上。高电阻层被放置在绝缘体上并与柱导体物理隔离。高电阻材料可以是氧化铬或10％-50％重量的Cr + SiO。一组微尖端电子发射体放置在高电阻层上。低电阻带将列导体与高电阻层互连，以连接列导体，高电阻层和电子发射体组的电串联电路。一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。一层绝缘体选自包括SiC，SiO和Si 3 N 4的一组材料。阳极板附接有阳极板和正在抽真空的微尖端电子发射体之间的中间空间。

3. 发明授权

US06198220B1 Sealing structure for organic light emitting devices 失效
标题翻译：有机发光装置的密封结构
公开(公告)号：US06198220B1
公开(公告)日：2001-03-06
申请号：US09074406
申请日：1998-05-08
申请人： Gary W. Jones , Webster E. Howard , Steven M. Zimmerman
发明人： Gary W. Jones , Webster E. Howard , Steven M. Zimmerman
IPC分类号： B05D136
CPC分类号： H01L51/5256 , Y10S428/917 , Y10T428/12535 , Y10T428/12597 , Y10T428/12604
摘要： A sealing structure for an organic light emitting device display. The sealing structure comprises a metal film overlying a dielectric film. The sealing structure has low moisture and oxygen permeability. At least one of the metal layers may react with moisture or oxygen to seal off pin holes. A net low stress sealing structure may be formed by combining tensile and compressive films. The sealing structure may be etched to create openings for connection to outside circuitry. The innovative sealing structure minimizes moisture leakage and vertical shorts between diode cathode and anode.
摘要翻译：一种用于有机发光器件显示器的密封结构。密封结构包括覆盖电介质膜的金属膜。密封结构具有低水分和透氧性。金属层中的至少一个可以与水分或氧气反应以密封针孔。可以通过组合拉伸和压缩薄膜来形成净低应力密封结构。可以蚀刻密封结构以产生用于连接到外部电路的开口。创新的密封结构使二极管阴极和阳极之间的水分泄漏和垂直短路最小化。

4. 发明授权

US6016033A Electrode structure for high resolution organic light-emitting diode displays and method for making the same 失效
标题翻译：用于高分辨率有机发光二极管显示器的电极结构及其制造方法
公开(公告)号：US6016033A
公开(公告)日：2000-01-18
申请号：US73798
申请日：1998-05-07
申请人： Gary W. Jones , Webster E. Howard , Steven M. Zimmerman
发明人： Gary W. Jones , Webster E. Howard , Steven M. Zimmerman
IPC分类号： H01L51/52 , H05B33/12
CPC分类号： H01L51/5203 , Y10S428/917
摘要： The present invention is directed to an electrode structure for an organic light-emitting device display. The electrode structure includes a transparent electrode and a high conductivity rib. The structure provides top side light output and a low line resistance, and enables a high resolution display. The structure permits a display to be built on top of a silicon driver chip for active matrix addressing.
摘要翻译：本发明涉及一种用于有机发光器件显示器的电极结构。电极结构包括透明电极和高导电性肋。该结构提供顶侧光输出和低线路电阻，并实现高分辨率显示。该结构允许将显示器构建在硅驱动器芯片之上，用于有源矩阵寻址。

5. 发明授权

US5844351A Field emitter device, and veil process for THR fabrication thereof 失效
标题翻译：场致发射器件及其THR制造的面纱工艺
公开(公告)号：US5844351A
公开(公告)日：1998-12-01
申请号：US519122
申请日：1995-08-24
申请人： Gary W. Jones , Steven M. Zimmerman , Jeffrey A. Silvernail , Susan K. Schwartz Jones
发明人： Gary W. Jones , Steven M. Zimmerman , Jeffrey A. Silvernail , Susan K. Schwartz Jones
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J21/00
CPC分类号： H01J9/025 , H01J3/022 , H01J2201/319 , H01J2329/00 , Y10S428/938
摘要： A field emitter device formed by a veil process wherein a protective layer comprising a release layer is deposited on the gate electrode layer for the device, with the protective layer overlying the circumscribing peripheral edge of the opening of the gate electrode layer, to protect the edge of the gate electrode layer during etching of the field emitter cavity in the dielectric material layer on a substrate, and during the formation of a field emitter element in the cavity by depositing a field emitter material through the opening. The protective layer is readily removed subsequent to completion of the cavity etching and emitter formation steps, to yield the field emitter device. Also disclosed are various planarizing structures and methods, and current limiter compositions permitting high efficiency emission of electrons from the field emitter elements at low turn-on voltages.
摘要翻译：通过面纱工艺形成的场致发射体器件，其中包含释放层的保护层沉积在器件的栅极电极层上，其中保护层覆盖栅极电极层的开口的外接边缘，以保护边缘在栅极电极层的蚀刻期间，在衬底中的电介质材料层中的场致发射器空腔的蚀刻期间，以及在通过开口沉积场致发射体材料在空腔中形成场发射极元件期间。在腔蚀刻和发射极形成步骤完成之后，保护层容易去除，以产生场致发射器件。还公开了各种平面化结构和方法，以及允许在低导通电压下从场致发射体元件高效发射电子的限流器组合物。

6. 发明授权

US5663608A Field emission display devices, and field emisssion electron beam source and isolation structure components therefor 失效
标题翻译：场致发射显示装置和场发射电子束源及隔离结构部件
公开(公告)号：US5663608A
公开(公告)日：1997-09-02
申请号：US633545
申请日：1996-04-17
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J1/304 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/02 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00 , H01J1/02
CPC分类号： G09G3/001 , G01R33/10 , G02B27/017 , G02B27/0172 , G02B27/0176 , G02B27/2235 , H01J1/3042 , H01J29/028 , H01J29/94 , H01J3/022 , H01J31/127 , H01J9/025 , H04N13/0422 , H04N13/0438 , H04N13/044 , H04N13/0459 , H04N13/0497 , H04N5/7408 , G02B2027/0132 , G02B2027/0136 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H01J2329/8625 , H01J2329/863 , H01J2329/864 , H04N13/0059 , H04N13/0285 , H04N13/0427 , H04N13/0456 , H04N5/70 , H04N5/7491
摘要： A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.
摘要翻译：一种场发射器结构，包括：基底; 基底基板上的场发射体元件; 围绕基底衬底上的场发射体元件的多层差分蚀刻介质堆叠; 以及覆盖多层差分蚀刻的电介质叠层的栅电极，并且以与外界发射极元件间隔开的关系。还公开了电子源器件，其包括电子发射器元件，其包括选自由漏电介质材料和漏绝缘体材料组成的组的材料，以及电子源器件，其包括电子发射器元件，该电子发射器元件包括掺杂有隧道电子发射增加有效量的掺杂物种类和薄膜三极管器件。

7. 发明授权

US06255771B1 Flashover control structure for field emitter displays and method of making thereof 失效
标题翻译：场发射体显示器的闪络控制结构及其制作方法
公开(公告)号：US06255771B1
公开(公告)日：2001-07-03
申请号：US08985222
申请日：1997-12-04
申请人： Gary W. Jones , Steven M. Zimmerman , Webster E. Howard , Stewart Lloyd
发明人： Gary W. Jones , Steven M. Zimmerman , Webster E. Howard , Stewart Lloyd
IPC分类号： H01J162
CPC分类号： H01J3/022
摘要： A field emitter device including an insulator structure provided on an upper gate line layer of the device. The insulator structure may surround groups of emitters arranged on adjacent gate lines, groups of emitters arranged on the same gate lines, and/or entire regions of a larger array of field emitters. The insulator structure may reduce the occurrence of flashovers to and from the gate lines and emitters when the field emitter device is used in a display. The insulator structure may also enhance the focus of electrons emitted by the field emitter device on the display screen. Focus may be further enhanced by the addition of a resistive coating on the insulator structure. Methods of making the insulator structure and resistive coating are also disclosed.
摘要翻译：一种场致发射器件，包括设置在器件的上栅极线层上的绝缘体结构。绝缘体结构可以围绕布置在相邻栅极线上的发射极组，布置在相同栅极线上的发射极组和/或更大阵列的场致发射体的整个区域。当场致发射器件用于显示器时，绝缘体结构可以减少与栅极线和发射极之间的闪络的发生。绝缘体结构还可以增强由场致发射器件在显示屏上发射的电子的焦点。通过在绝缘体结构上添加电阻涂层可以进一步增强聚焦。还公开了制造绝缘体结构和电阻涂层的方法。

8. 发明授权

US5965898A High aspect ratio gated emitter structure, and method of making 失效
公开(公告)号：US5965898A
公开(公告)日：1999-10-12
申请号：US937412
申请日：1997-09-25
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： H01J3/02 , H01J9/02 , H01L29/41 , H01J1/16 , H01J19/10
CPC分类号： H01J9/025 , H01J3/022 , H01J2201/30407
摘要： A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions. An etch resistant layer may optionally be provided between the upper layer of insulator material and the gate material.

9. 发明授权

US5688158A Planarizing process for field emitter displays and other electron source applications 失效
标题翻译：场发射显示器和其他电子源应用的平面化处理
公开(公告)号：US5688158A
公开(公告)日：1997-11-18
申请号：US519121
申请日：1995-08-24
申请人： Gary W. Jones , Steven M. Zimmerman , Susan K. Schwartz Jones , Michael J. Costa , Jeffrey A. Silvernail
发明人： Gary W. Jones , Steven M. Zimmerman , Susan K. Schwartz Jones , Michael J. Costa , Jeffrey A. Silvernail
IPC分类号： B81C1/00 , H01J9/02
CPC分类号： B81C1/00611 , H01J9/025 , B81C2201/0126
摘要： A planarization method for use during manufacture of a microelectronic field emitter device, comprising applying a glass frit slurry including glass particles in a removable base, and subsequently baking to liquify the frit. The invention relates in another aspect to a method of making a microelectronic field emitter device, comprising the steps of: applying a patterned layer of liftoff profile resist over a substrate to define emitter conductor locations; employing the patterned resist layer to form trenches in the substrate at the emitter conductor locations; depositing emitter conductor metal in the trenches and over the patterned resist layer; removing the patterned resist layer; depositing a current limiter layer over the conductors and substrate areas between trenches; depositing a layer of emitter material; pattern masking and etching the layer of emitter material to form emitter structures; depositing gate dielectric; applying a patterned layer of liftoff profile resist over the gate dielectric; evaporating gate metal; and removing the patterned resist layer to define gate electrodes.
摘要翻译：一种在制造微电子场发射器件期间使用的平面化方法，包括将包括玻璃颗粒的玻璃料浆料涂覆在可移除的基底中，随后烘焙以熔化玻璃料。本发明在另一方面涉及一种制造微电子场发射器件的方法，包括以下步骤：在衬底上施加图案化的剥离轮廓抗蚀剂层以限定发射体导体位置; 使用图案化的抗蚀剂层在发射极导体位置处在衬底中形成沟槽; 将发射极导体金属沉积在沟槽中和图案化抗蚀剂层上方; 去除图案化的抗蚀剂层; 在沟槽之间的导体和衬底区域上沉积限流器层; 沉积一层发射体材料; 图案掩蔽和蚀刻发射体材料层以形成发射体结构; 沉积栅电介质; 在栅极电介质上施加图案化的剥离轮廓抗蚀剂层; 蒸发栅极金属; 并去除图案化的抗蚀剂层以限定栅电极。

10. 发明授权

US5629583A Flat panel display assembly comprising photoformed spacer structure, and method of making the same 失效
标题翻译：包括光成型间隔结构的平板显示组件及其制造方法
公开(公告)号：US5629583A
公开(公告)日：1997-05-13
申请号：US623124
申请日：1996-03-28
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： H01J9/24 , H01J29/02 , H01J29/86 , H01J31/12 , H01J1/66
CPC分类号： H01J9/242 , H01J29/028 , H01J29/864 , H01J31/127 , H01J2329/00 , H01J2329/8625 , H01J2329/864 , H01J2329/866
摘要： A spacer structure for use in a flat panel display, and a corresponding flat panel display article are disclosed, together with an appertaining method of fabricating the spacer structure utilizing a photosensitive precursor material which is selectively irradiated, developed and etchingly processed to produce shaped standoff elements for a unitary spacer structure. The spacer structure may be dimensionally fabricated to precisely align with a selected pixel region, comprising a single pixel or an array of pixels, e.g., a color (red, blue, green) triad.
摘要翻译：公开了一种用于平板显示器的间隔结构，以及相应的平板显示器件，以及使用光敏前体材料制造间隔结构的一种方法，该光敏前体材料被选择性地照射，显影和蚀刻加工以产生成形的支座元件用于整体间隔结构。间隔结构可以被尺寸制造成精确对齐所选择的像素区域，包括单个像素或像素阵列，例如，颜色（红色，蓝色，绿色）三元组。

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