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1. 发明授权

US5828163A Field emitter device with a current limiter structure 失效
标题翻译：具有限流器结构的场发射极器件
公开(公告)号：US5828163A
公开(公告)日：1998-10-27
申请号：US781289
申请日：1997-01-13
申请人： Gary W. Jones , Susan K. Jones , Jeffrey Marino , Joseph K. Ho , R. Mark Boysel , Steven M. Zimmerman , Yachin Liu , Michael J. Costa , Jeffrey A. Silvernail
发明人： Gary W. Jones , Susan K. Jones , Jeffrey Marino , Joseph K. Ho , R. Mark Boysel , Steven M. Zimmerman , Yachin Liu , Michael J. Costa , Jeffrey A. Silvernail
IPC分类号： H01J1/304 , H01J1/02
CPC分类号： H01J1/3042 , H01J2201/319 , H01J2329/00
摘要： A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4. An anode plate is attached with intermediate space between the anode plate and the microtip electron emitters being evacuated.
摘要翻译：场致发射器件包括列导体，绝缘体和电阻结构，用于有利地限制场发射器阵列中的电流。在绝缘基板上沉积宽的列导体。绝缘体放置在列导体上。高电阻层被放置在绝缘体上并与柱导体物理隔离。高电阻材料可以是氧化铬或10％-50％重量的Cr + SiO。一组微尖端电子发射体放置在高电阻层上。低电阻带将列导体与高电阻层互连，以连接列导体，高电阻层和电子发射体组的电串联电路。一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。一层绝缘体选自包括SiC，SiO和Si 3 N 4的一组材料。阳极板附接有阳极板和正在抽真空的微尖端电子发射体之间的中间空间。

2. 发明授权

US5561339A Field emission array magnetic sensor devices 失效
标题翻译：场发射阵列磁传感器装置
公开(公告)号：US5561339A
公开(公告)日：1996-10-01
申请号：US302109
申请日：1994-09-07
申请人： Gary W. Jones , Jong Kim , Steven M. Zimmerman
发明人： Gary W. Jones , Jong Kim , Steven M. Zimmerman
IPC分类号： G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00 , H01J1/16
CPC分类号： G02B27/017 , G01R33/10 , G02B27/0172 , G02B27/0176 , G02B27/2235 , G09G3/001 , H01J29/94 , H01J3/022 , H01J31/127 , H01J9/025 , H04N13/0422 , H04N13/0438 , H04N13/044 , H04N13/0459 , H04N13/0497 , H04N5/7408 , G02B2027/0132 , G02B2027/0136 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H04N13/0059 , H04N13/0285 , H04N13/0427 , H04N13/0456 , H04N5/70 , H04N5/7491
摘要： A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.
摘要翻译：一种场致发射阵列磁传感器（FEAMS）装置，包括：阳极; 基板构件在其第一侧上具有与阳极隔开的近似关系的多个门控场致发射体元件。多个选通场发射极元件和阳极结构被布置成使得每个门控场致发射元件根据门电场发射极元件上的磁场的强度而与电子发射的关系变化。该装置包括用于感测从多个选通场发射极元件接收电子的阳极结构电子冲击位置的位置的结构，以及确定磁场的强度和取向。还公开了可以有效地用于本发明的FEAMS装置中的各种阳极配置。

3. 发明授权

US06169358A Method and apparatus for flashover control, including a high voltage spacer for parallel plate electron beam array devices and method of making thereof 失效
标题翻译：用于闪络控制的方法和装置，包括用于平行板电子束阵列装置的高压间隔器及其制造方法
公开(公告)号：US06169358A
公开(公告)日：2001-01-02
申请号：US09073342
申请日：1998-05-06
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： H01J162
CPC分类号： H01J9/261 , H01J29/862 , H01J31/123 , H01J2201/304
摘要： A structure to reduce the likelihood of flashover in a parallel plate electron beam array is disclosed. The structure may comprise a means for generating a low intensity electric field in the vicinity of a spacer separating the parallel plates of the array, and the anode. The presence of the electric field in the vicinity of the spacer is not conducive to the occurrence of a surface supported flashover on the gates and emitters. The electric field means may be provided by a conductive coating on one or more surfaces of the spacer. Alternatively, the electric field means may be provided by a conductive coating on a guard ring located within the array in the vicinity of the spacer. Methods of making the structure are also disclosed.
摘要翻译：公开了一种降低平行板电子束阵列中闪络的可能性的结构。该结构可以包括用于在分隔阵列的平行板和阳极的间隔物附近产生低强度电场的装置。在间隔物附近的电场的存在不利于在栅极和发射体上发生表面支撑的闪络。电场装置可以由间隔物的一个或多个表面上的导电涂层提供。或者，电场装置可以通过位于阵列附近的隔离物的保护环上的导电涂层来提供。还公开了制造该结构的方法。

4. 发明授权

US6144145A High performance field emitter and method of producing the same 失效
标题翻译：高性能场致发射体及其制造方法
公开(公告)号：US6144145A
公开(公告)日：2000-11-07
申请号：US73340
申请日：1998-05-06
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： H01J1/304 , H01J1/30
CPC分类号： H01J1/3042 , H01J2201/30446 , H01J2201/319
摘要： A high performance novel electron emitter material for use in field emission devices is disclosed. The high performance electron emitter material of the invention may comprise a high Cr and SiO mixture. This material may be formed into high aspect ratio, low work function tips which maintain their shape, thus minimizing flash over risks and electron scattering problems, while at the same time permitting a high level of fabrication process flexibility, and minimizing film stresses. One or more impurities which are conductive oxides or will form conductive oxides may be added to the Cr--SiO composition so that a net low work function emitter may be maintained under oxidation. A class of semi-conductive and conductive metal oxides comprises another embodiment of the invention. These materials include oxides of Cr, Mo, Ni, Fe, and Sc, which have current emitting properties desirable for applications where improved electron emission infirmity is desired among emitters within a pixel. Emission from these more resistive emitter tip materials may be optionally enhanced with the addition of low work function impurities such as alkali metals enabling more stable devices while still permitting low turn-on voltages. Methods of making the emitter are also disclosed.
摘要翻译：公开了一种用于场致发射器件的高性能新型电子发射体材料。本发明的高性能电子发射体材料可以包括高Cr和SiO混合物。该材料可以形成为高纵横比，低功函数尖端，保持其形状，从而使风险和电子散射问题的闪现最小化，同时允许高水平的制造工艺灵活性，并最小化薄膜应力。可以将一种或多种作为导电氧化物或将形成导电氧化物的杂质添加到Cr-SiO组合物中，使得可以在净氧化下保持净低功函数发射极。一类半导体和导电金属氧化物包括本发明的另一个实施方案。这些材料包括Cr，Mo，Ni，Fe和Sc的氧化物，其对于在像素内的发射体中期望改善的电子发射弱化的应用具有期望的电流发射特性。可以通过添加低功函杂质例如碱金属来增加这些更电阻的发射极尖端材料的发射，从而使得能够实现更稳定的器件同时仍然允许低导通电压。还公开了制造发射极的方法。

5. 发明授权

US5866978A Matrix getter for residual gas in vacuum sealed panels 失效
标题翻译：真空密封板中残留气体的基质吸气剂
公开(公告)号：US5866978A
公开(公告)日：1999-02-02
申请号：US941078
申请日：1997-09-30
申请人： Gary W. Jones , Amalkumar P. Ghosh , Steven M. Zimmerman , Munisamy Anandan
发明人： Gary W. Jones , Amalkumar P. Ghosh , Steven M. Zimmerman , Munisamy Anandan
IPC分类号： H01J9/385 , H01J29/94 , H01J1/62
CPC分类号： H01J9/385 , H01J29/94 , H01J2209/385 , H01J2329/00
摘要： An integral and internal matrix getter structure for capturing residual gas in a vacuum sealed container is disclosed. The vacuum sealed container may be a flat panel display having a small vacuum gap between two closely spaced panels. The getter structure may be provided on the inside of the walls of the display. In particular, the getter structure may be provided between phosphor groups and/or between field emitter groups on the display panels. The getter structure may be sealed to avoid exposure of the getter material until after a vacuum condition is reached within the display. Activation of the getter structure may be provided by selectively heating the getter structure with a laser or with resistive heating elements underlying the getter structure. Methods of making the getter structure are also disclosed.
摘要翻译：公开了一种用于捕获真空密封容器中残留气体的整体和内部基质吸气剂结构。真空密封容器可以是在两个紧密间隔的面板之间具有小真空间隙的平板显示器。吸气剂结构可以设置在显示器的壁的内部。特别地，吸气剂结构可以设置在荧光体组之间和/或在显示面板上的场发射体组之间。吸气剂结构可以被密封以避免吸气剂材料暴露直到在显示器内达到真空条件之后。吸气剂结构的激活可以通过用激光器或吸气剂结构下面的电阻加热元件选择性加热吸气剂结构来提供。还公开了制备吸气剂结构的方法。

6. 发明授权

US5619889A Method of making microstructural surgical instruments 失效
标题翻译：制作微结构外科手术器械的方法
公开(公告)号：US5619889A
公开(公告)日：1997-04-15
申请号：US321089
申请日：1994-10-11
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： A61F9/013 , B23P15/40 , B24B1/04 , B24B3/36 , B24B3/58
CPC分类号： B24B1/04 , A61F9/0133 , B23P15/40 , B24B3/36 , B24B3/58
摘要： A method of making a microstructural shaped article from a high hardness substrate workpiece, in which an energy-transmissive shaping member is secured in energy-transmissive relationship to an energy source, and the substrate workpiece is positioned in alignment therewith. A fine grain slurry of solid particles is provided between the energy-transmissive shaping member and the substrate, and the substrate workpiece is milled by the energy-transmissive shaping member in compressive bearing relationship to the substrate through the fine grain slurry of solid particles, for sufficient time to form the desired shape in the substrate workpiece. A reusable, tribologically enhanced die is also described, for use in the method of the invention. The energy source may be an electroacoustic energy source or an electric power energy source. The non-etched microstructural articles of the invention include knives, saws, and other instruments useful for ocular and other surgical applications.
摘要翻译：从高硬度基板工件制造微结构成形制品的方法，其中能量传递成形构件以与能量源的能量传递关系固定，并且衬底工件被定位成与其对准。在能量传递成形构件和基板之间设置有细颗粒的固体颗粒，并且通过固体颗粒的细颗粒浆料与基板压缩承载关系的能量传递成形构件将基板工件研磨，足够的时间在基板工件中形成所需的形状。还描述了可重复使用的摩擦增强的模具，用于本发明的方法。能量源可以是电声能量源或电力能量源。本发明的未蚀刻的微结构制品包括可用于眼部和其它手术应用的刀，锯和其它器械。

7. 发明授权

US5534743A Field emission display devices, and field emission electron beam source and isolation structure components therefor 失效
标题翻译：场致发射显示装置及场发射电子束源及隔离结构部件
公开(公告)号：US5534743A
公开(公告)日：1996-07-09
申请号：US301473
申请日：1994-09-07
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J1/304 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/02 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00 , H01J1/02
CPC分类号： G09G3/001 , G01R33/10 , G02B27/017 , G02B27/0172 , G02B27/0176 , G02B27/2235 , H01J1/3042 , H01J29/028 , H01J29/94 , H01J3/022 , H01J31/127 , H01J9/025 , H04N13/0422 , H04N13/0438 , H04N13/044 , H04N13/0459 , H04N13/0497 , H04N5/7408 , G02B2027/0132 , G02B2027/0136 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H01J2329/8625 , H01J2329/863 , H01J2329/864 , H04N13/0059 , H04N13/0285 , H04N13/0427 , H04N13/0456 , H04N5/70 , H04N5/7491
摘要： A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.
摘要翻译：一种场发射器结构，包括：基底; 基底基板上的场发射体元件; 围绕基底衬底上的场发射体元件的多层差分蚀刻介质堆叠; 以及覆盖多层差分蚀刻的电介质叠层的栅电极，并且以与外界发射极元件间隔开的关系。还公开了电子源器件，其包括电子发射器元件，其包括选自由漏电介质材料和漏绝缘体材料组成的组的材料，以及电子源器件，其包括电子发射器元件，该电子发射器元件包括掺杂有隧道电子发射增加有效量的掺杂物种类和薄膜三极管器件。

8. 发明授权

US06255771B1 Flashover control structure for field emitter displays and method of making thereof 失效
标题翻译：场发射体显示器的闪络控制结构及其制作方法
公开(公告)号：US06255771B1
公开(公告)日：2001-07-03
申请号：US08985222
申请日：1997-12-04
申请人： Gary W. Jones , Steven M. Zimmerman , Webster E. Howard , Stewart Lloyd
发明人： Gary W. Jones , Steven M. Zimmerman , Webster E. Howard , Stewart Lloyd
IPC分类号： H01J162
CPC分类号： H01J3/022
摘要： A field emitter device including an insulator structure provided on an upper gate line layer of the device. The insulator structure may surround groups of emitters arranged on adjacent gate lines, groups of emitters arranged on the same gate lines, and/or entire regions of a larger array of field emitters. The insulator structure may reduce the occurrence of flashovers to and from the gate lines and emitters when the field emitter device is used in a display. The insulator structure may also enhance the focus of electrons emitted by the field emitter device on the display screen. Focus may be further enhanced by the addition of a resistive coating on the insulator structure. Methods of making the insulator structure and resistive coating are also disclosed.
摘要翻译：一种场致发射器件，包括设置在器件的上栅极线层上的绝缘体结构。绝缘体结构可以围绕布置在相邻栅极线上的发射极组，布置在相同栅极线上的发射极组和/或更大阵列的场致发射体的整个区域。当场致发射器件用于显示器时，绝缘体结构可以减少与栅极线和发射极之间的闪络的发生。绝缘体结构还可以增强由场致发射器件在显示屏上发射的电子的焦点。通过在绝缘体结构上添加电阻涂层可以进一步增强聚焦。还公开了制造绝缘体结构和电阻涂层的方法。

9. 发明授权

US5965898A High aspect ratio gated emitter structure, and method of making 失效
公开(公告)号：US5965898A
公开(公告)日：1999-10-12
申请号：US937412
申请日：1997-09-25
申请人： Gary W. Jones , Steven M. Zimmerman
发明人： Gary W. Jones , Steven M. Zimmerman
IPC分类号： H01J3/02 , H01J9/02 , H01L29/41 , H01J1/16 , H01J19/10
CPC分类号： H01J9/025 , H01J3/022 , H01J2201/30407
摘要： A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions. An etch resistant layer may optionally be provided between the upper layer of insulator material and the gate material.

10. 发明授权

US5688158A Planarizing process for field emitter displays and other electron source applications 失效
标题翻译：场发射显示器和其他电子源应用的平面化处理
公开(公告)号：US5688158A
公开(公告)日：1997-11-18
申请号：US519121
申请日：1995-08-24
申请人： Gary W. Jones , Steven M. Zimmerman , Susan K. Schwartz Jones , Michael J. Costa , Jeffrey A. Silvernail
发明人： Gary W. Jones , Steven M. Zimmerman , Susan K. Schwartz Jones , Michael J. Costa , Jeffrey A. Silvernail
IPC分类号： B81C1/00 , H01J9/02
CPC分类号： B81C1/00611 , H01J9/025 , B81C2201/0126
摘要： A planarization method for use during manufacture of a microelectronic field emitter device, comprising applying a glass frit slurry including glass particles in a removable base, and subsequently baking to liquify the frit. The invention relates in another aspect to a method of making a microelectronic field emitter device, comprising the steps of: applying a patterned layer of liftoff profile resist over a substrate to define emitter conductor locations; employing the patterned resist layer to form trenches in the substrate at the emitter conductor locations; depositing emitter conductor metal in the trenches and over the patterned resist layer; removing the patterned resist layer; depositing a current limiter layer over the conductors and substrate areas between trenches; depositing a layer of emitter material; pattern masking and etching the layer of emitter material to form emitter structures; depositing gate dielectric; applying a patterned layer of liftoff profile resist over the gate dielectric; evaporating gate metal; and removing the patterned resist layer to define gate electrodes.
摘要翻译：一种在制造微电子场发射器件期间使用的平面化方法，包括将包括玻璃颗粒的玻璃料浆料涂覆在可移除的基底中，随后烘焙以熔化玻璃料。本发明在另一方面涉及一种制造微电子场发射器件的方法，包括以下步骤：在衬底上施加图案化的剥离轮廓抗蚀剂层以限定发射体导体位置; 使用图案化的抗蚀剂层在发射极导体位置处在衬底中形成沟槽; 将发射极导体金属沉积在沟槽中和图案化抗蚀剂层上方; 去除图案化的抗蚀剂层; 在沟槽之间的导体和衬底区域上沉积限流器层; 沉积一层发射体材料; 图案掩蔽和蚀刻发射体材料层以形成发射体结构; 沉积栅电介质; 在栅极电介质上施加图案化的剥离轮廓抗蚀剂层; 蒸发栅极金属; 并去除图案化的抗蚀剂层以限定栅电极。

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