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1. 发明授权

US07075073B1 Angle resolved x-ray detection 有权
标题翻译：角度分辨X线检测
公开(公告)号：US07075073B1
公开(公告)日：2006-07-11
申请号：US10851437
申请日：2004-05-21
申请人： Gary R. Janik , Jeffrey A. Moore , Edward M. James
发明人： Gary R. Janik , Jeffrey A. Moore , Edward M. James
IPC分类号： G21K1/02
CPC分类号： G01N23/20 , G21K1/06
摘要： An apparatus for detecting properties of a sample. An electron beam generator produces an electron beam and directs the electron beam at a desired point on the sample. The sample thereby emits characteristic x-rays at takeoff angles. A collimator receives and parallelizes the x-rays and converts the takeoff angles of the x-rays to positional differences between the parallelized x-rays. A diffractor receives and deflects the x-rays. A position sensitive detector receives the deflected x-rays and detects the positional differences between the x-rays, and generates signals that are characteristic of the received x-rays. An analyzer receives the signals from the detector and determines the properties of the sample based at least in part on the positional differences between the x-rays.
摘要翻译：一种用于检测样品特性的装置。电子束发生器产生电子束并将电子束引导到样品上的所需点。因此，样品从而以起飞角发射特征性X射线。准直器接收并平行X射线，并将x射线的射出角度转换为平行X射线之间的位置差异。衍射器接收和偏转x射线。位置敏感检测器接收偏转的x射线并检测x射线之间的位置差异，并产生作为接收到的x射线的特征的信号。分析仪接收来自检测器的信号，并且至少部分地基于X射线之间的位置差异来确定样品的性质。

2. 发明授权

US07427757B1 Large collection angle x-ray monochromators for electron probe microanalysis 失效
标题翻译：用于电子探针微量分析的大型收集角x射线单色仪
公开(公告)号：US07427757B1
公开(公告)日：2008-09-23
申请号：US11295258
申请日：2005-12-05
申请人： Gary R. Janik , Jeffrey A. Moore
发明人： Gary R. Janik , Jeffrey A. Moore
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G21K1/06 , H01J37/244 , H01J37/252 , H01J2237/24425 , H01J2237/2561
摘要： X-ray monochromators and electron probe micro-analysis (EPMA) systems using such monochromators are disclosed. A turretless x-ray monochromator may have a cassette of reflectors instead of a turret. The cassette stores a plurality of reflectors that can be inserted into a conventional Rowland circle monochromator geometry. A transfer mechanism selectively moves reflectors from the cassette to a reflector positioner. The use of the cassette allows each reflector to be placed closer to a source of x-rays, thereby allowing a larger solid angle for x-ray collection. An alternative x-ray monochromator uses a non-focusing reflector that can be fixed, scanned axially or scanned radially to provide large solid angle detection of x-rays at various energies with a single reflector.
摘要翻译：公开了使用这种单色仪的X射线单色仪和电子探针微分析（EPMA）系统。无转塔X射线单色仪可以具有一个反射镜盒而不是一个转盘。磁带盒存储可以插入常规罗兰圆单色仪几何形状的多个反射器。传送机构选择性地将反射器从盒子移动到反射器定位器。使用盒式磁带允许每个反射器被放置得更靠近X射线源，从而允许用于x射线收集的更大的立体角。另一种x射线单色仪使用非聚焦反射器，其可以被固定，轴向扫描或径向扫描，以提供具有单个反射器的各种能量的X射线的大的立体角检测。

3. 发明授权

US07521946B1 Electrical measurements on semiconductors using corona and microwave techniques 有权
标题翻译：使用电晕和微波技术对半导体进行电气测量
公开(公告)号：US07521946B1
公开(公告)日：2009-04-21
申请号：US11277934
申请日：2006-03-29
申请人： Gary R. Janik
发明人： Gary R. Janik
IPC分类号： G01R31/302
CPC分类号： G01R31/2621 , G01R31/311
摘要： A corona-microwave system can generate accurate capacitance-voltage (C-V) and resistance-voltage (R-V) curves, thereby allowing the accurate determination of gate film capacitance, sheet resistance of implanted regions, and mobility of a substrate under a gate. The corona-microwave system can combine a corona deposition system, a Kelvin probe, and a microwave probe. The corona deposition system can deposit a corona charge on a surface of the semiconductor. The Kelvin and microwave probes can be used to make first and second electrical measurements of a layer/region of the semiconductor. The steps of charge deposition and probe measurements can be repeated to generate a curve plotting the first and second electrical measurements. Because the first and second electrical measurements can be accurately made, the extracted information from the curve is also accurate.
摘要翻译：电晕微波系统可以产生精确的电容电压（C-V）和电阻电压（R-V）曲线，从而允许精确确定栅极膜电容，注入区域的薄层电阻和栅极下的衬底的迁移率。电晕微波系统可以组合电晕沉积系统，开尔文探针和微波探头。电晕沉积系统可以在半导体的表面上沉积电晕电荷。开尔文和微波探头可用于对半导体层/区域进行第一次和第二次电气测量。可以重复电荷沉积和探针测量的步骤以产生绘制第一和第二电测量的曲线。由于可以准确地进行第一和第二电测量，所以从曲线提取的信息也是准确的。

4. 发明授权

US07433056B1 Scatterometry metrology using inelastic scattering 有权
标题翻译：散射测量使用非弹性散射
公开(公告)号：US07433056B1
公开(公告)日：2008-10-07
申请号：US11182171
申请日：2005-07-15
申请人： Gary R. Janik
发明人： Gary R. Janik
IPC分类号： G01B11/24 , G01B11/30 , G01B11/14 , G01J3/44 , G01J3/42 , G01J3/427 , G01J3/28
CPC分类号： G01B11/0616 , G01N21/65 , G01N2021/653
摘要： A system for characterizing material properties in miniature semiconductor structures performs a scatterometry analysis on inelastically scattered light. The system can include a narrowband probe beam generator and a detector. A single wavelength probe beam from the narrowband probe beam generator produces scattered light from a measurement pattern on a test sample. The scattered light is measured by the detector, and the measurement data (e.g., Raman spectrum) is used in a scatterometry analysis to determine material properties for the measurement pattern. The detector can measure either incoherent inelastically scattered light (e.g., using a spectrometer) or coherent inelastically scattered light (e.g., using an array detector). If the measurement pattern dimensions are substantially similar to actual device dimensions, the material property distributions determined for the measurement pattern can be applied to the actual devices on the test sample.
摘要翻译：用于表征微型半导体结构中的材料性质的系统对非弹性散射光进行散射分析。该系统可以包括窄带探测光束发生器和检测器。来自窄带探测光束发生器的单个波长探测光束从测试样品上的测量图形产生散射光。通过检测器测量散射光，并且在散射分析中使用测量数据（例如，拉曼光谱）来确定测量图案的材料特性。检测器可以测量非相干非弹性散射光（例如，使用光谱仪）或相干非弹性散射光（例如，使用阵列检测器）。如果测量图形尺寸基本上类似于实际的装置尺寸，则可以将测量图案确定的材料特性分布应用于测试样品上的实际装置。

5. 发明授权

US07166838B1 X-ray imaging for patterned film measurement 有权
标题翻译：用于图案膜测量的X射线成像
公开(公告)号：US07166838B1
公开(公告)日：2007-01-23
申请号：US11135974
申请日：2005-05-23
申请人： Gary R. Janik
发明人： Gary R. Janik
IPC分类号： G01N23/201
CPC分类号： G01N23/04
摘要： An x-ray metrology system includes an e-beam generator to cause a test sample to emit x-rays, x-ray optics for focusing the x-rays, and an x-ray imager to generate an image of the test sample from the focused x-rays. Because the x-ray imager provides a direct representation of the x-ray emission characteristics of the test sample, the resolution of a measurement taken using such a sensor is limited only by the resolution of the sensor (and any focusing optics), rather than by the amount of e-beam spread in the thin film. The x-ray imaging can be performed for object planes at the test sample that are not parallel to the test sample, thereby allowing vertical dimension data to be accurately generated by the x-ray imaging system.
摘要翻译： x射线测量系统包括电子束发生器，以使测试样品发射x射线，用于聚焦x射线的x射线光学元件和x射线成像仪，以从聚焦x射线。由于x射线成像仪提供了测试样品的x射线发射特性的直接表示，所以使用这种传感器进行测量的分辨率仅受传感器（和任何聚焦光学器件）的分辨率的限制，而不是通过电子束在薄膜中的传播量。可以对与测试样品不平行的测试样品的物体平面执行x射线成像，从而允许由x射线成像系统精确地产生垂直尺寸数据。

6. 发明授权

US5404217A Laser liquid flow cell manifold system and method for assembly 失效
标题翻译：激光液体流通池歧管系统及组装方法
公开(公告)号：US5404217A
公开(公告)日：1995-04-04
申请号：US112105
申请日：1993-08-26
申请人： Gary R. Janik , John F. Magolske
发明人： Gary R. Janik , John F. Magolske
IPC分类号： G01N15/14 , G01N21/05
CPC分类号： G01N15/1404
摘要： The flow cell system and method of the present invention for constructing and operating a light scattering test stand enables close reproducible tolerances to be achieved and automatically ensures the mutual alignment of the structures utilized to maintain stability. Pins and bosses are utilized to maintain alignment of the cell assembly with the read head. The flow cell assembly is held down in the read head independently of the stray light cover. The design of the present invention enables precision alignment reproducibility and ease of use.
摘要翻译：用于构建和操作光散射测试台的本发明的流动池系统和方法能够实现可实现的可再现的公差，并且自动确保用于维持稳定性的结构的相互对准。引脚和凸起被用于保持电池组件与读取头的对准。流动池组件独立于杂散光罩被按压在读取头中。本发明的设计能够实现精确的对准再现性和易用性。

7. 发明授权

US07369235B1 Method and system for measuring deep trenches in silicon 有权
标题翻译：测量硅深沟的方法和系统
公开(公告)号：US07369235B1
公开(公告)日：2008-05-06
申请号：US11165711
申请日：2005-06-24
申请人： Gary R. Janik , John Fielden
发明人： Gary R. Janik , John Fielden
IPC分类号： G01J4/00
CPC分类号： G01J4/04 , G01B11/0641 , G01N21/211
摘要： A spectroscopic ellipsometry system directs a near infra-red (NIR) probe beam at a test sample to allow metrology to be performed on vertical structures within the test sample. Because silicon is relatively transparent to NIR light, structural information can be determined from the polarization effects produced by the test sample, in a manner similar to that used with IR spectroscopic ellipsometry systems. However, unlike IR light, which requires delicate and costly optical and measurement components (e.g., vibration-sensitive Fourier transform sensors), NIR light can be directed and detected using more robust and inexpensive components (e.g., array-based detectors), thereby making a NIR spectroscopic ellipsometry system much more affordable and usable than conventional IR spectroscopic ellipsometry systems.
摘要翻译：光谱椭圆测量系统在测试样品上引导近红外（NIR）探针光束，以便在测试样品内的垂直结构上进行测量。因为硅对于NIR光是相对透明的，所以结构信息可以由与测试样品产生的极化效应以与用于IR光谱椭偏仪系统的方式类似的方式来确定。然而，与需要精密和昂贵的光学和测量部件（例如，振动傅里叶变换传感器）的IR光不同，可以使用更稳健和便宜的部件（例如，基于阵列的检测器）来引导和检测NIR光，从而使近红外光谱椭偏仪系统比常规IR光谱椭偏仪系统更加实惠和可用。

8. 发明授权

US07202951B1 Laser-based cleaning device for film analysis tool 有权
标题翻译：基于激光的电影分析工具清洗装置
公开(公告)号：US07202951B1
公开(公告)日：2007-04-10
申请号：US10976438
申请日：2004-10-28
申请人： Gary R. Janik , Patrick M. Maxton
发明人： Gary R. Janik , Patrick M. Maxton
IPC分类号： G01J4/00 , G01N21/55 , G01N23/00 , G01N21/86 , G01N23/223 , G01N23/20 , G01B11/30 , G01B11/24 , G01B11/28 , G01B15/02 , G02F1/01 , H01J40/14 , G21K7/00 , G01V8/00 , G01R31/26 , G01R27/26 , G01R31/305 , G01R31/302 , H01L21/66 , G01T1/36 , B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02 , C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： G01N21/211
摘要： A system for analyzing a thin film uses an energy beam, such as a laser beam, to remove a portion of a contaminant layer formed on the thin film surface. This cleaning operation removes only enough of the contaminant layer to allow analysis of the underlying thin film, thereby enhancing analysis throughput while minimizing the chances of recontamination and/or damage to the thin film. An energy beam source can be readily incorporated into a conventional thin film analysis tool, thereby minimizing total analysis system footprint. Throughput can be maximized by focusing the probe beam (or probe structure) for the analysis operation at the same location as the energy beam so that repositioning is not required after the cleaning operation. Alternatively, the probe beam (structure) and the energy beam can be directed at different locations to reduce the chances of contamination of the analysis optics.
摘要翻译：用于分析薄膜的系统使用诸如激光束的能量束来去除形成在薄膜表面上的污染物层的一部分。这种清洁操作仅去除了足够的污染物层，以便分析下面的薄膜，从而增强分析产量，同时最小化再沉淀和/或损坏薄膜的机会。能量束源可以容易地结合到传统的薄膜分析工具中，从而最小化总分析系统占用空间。通过将探测光束（或探针结构）聚焦在与能量束相同的位置处，可以最大化吞吐量，从而在清洁操作之后不需要重新定位。或者，探针光束（结构）和能量束可以被引导到不同的位置，以减少分析光学器件的污染机会。

9. 发明授权

US07110113B1 Film measurement with interleaved laser cleaning 有权
标题翻译：电影测量与交错激光清洗
公开(公告)号：US07110113B1
公开(公告)日：2006-09-19
申请号：US10616064
申请日：2003-07-08
申请人： Gary R. Janik , Dan G. Georgesco
发明人： Gary R. Janik , Dan G. Georgesco
IPC分类号： G01J4/00 , B08B7/00
CPC分类号： G01N21/8422 , B08B7/0042 , G01N21/211 , G01N21/55 , G01N2021/213 , G01N2021/8438
摘要： A system for analyzing a thin film simultaneously applies a pulsed cleaning beam and a measurement beam to an analysis location on a test sample to enhance measurement accuracy. The pulsed cleaning beam prevents contaminant regrowth on the analysis location during the actual measurement. To minimize the effects of thermal transients from the pulsed cleaning beam on measurement data, cleaning pulses can be timed to fall between data samples. Alternatively, data sampling can be blocked during each cleaning operation (i.e., each cleaning pulse and subsequent cooldown period) or data levels can be clamped at measurement levels from just before the start of the cleaning operation for the duration of the cleaning operation. Alternatively, data samples taken during each cleaning operation can be discarded or replaced with data samples from just before the cleaning operation using post-processing techniques.
摘要翻译：用于分析薄膜的系统同时将脉冲清洁光束和测量光束施加到测试样品上的分析位置，以提高测量精度。脉冲清洁光束可防止在实际测量过程中分析位置的污染物再生长。为了最小化来自脉冲清洁光束的热瞬变对测量数据的影响，清洁脉冲可以定时地落在数据样本之间。或者，在清洁操作期间，可以在每次清洁操作期间（即，每个清洁脉冲和随后的冷却期间）阻止数据采样，或者可以在清洁操作开始之前的测量水平将数据水平钳位。或者，可以在使用后处理技术的清洁操作之前的数据样本中丢弃或替换在每个清洁操作期间采集的数据样本。

10. 发明授权

US07109735B1 Method for measuring gate dielectric properties for three dimensional transistors 有权
标题翻译：用于测量三维晶体管的栅介质特性的方法
公开(公告)号：US07109735B1
公开(公告)日：2006-09-19
申请号：US11196589
申请日：2005-08-02
申请人： Gary R. Janik , Eric Bouche
发明人： Gary R. Janik , Eric Bouche
IPC分类号： G01R31/02
CPC分类号： G01R31/2884 , G01R31/2621 , G01R31/2648
摘要： A method for measuring three-dimensional gate dielectric structures can involve forming test patterns that cover a range of dimensional values for the fins on which the gate dielectric structures are formed. Then, by measuring the gate dielectric properties and then correlating those measurements with the underlying fin dimensions, a relationship between fin dimension(s) and gate dielectric properties can be determined. That relationship can then be applied to actual device structures to interpolate/extrapolate gate dielectric property values based on the fin dimensions in the actual device.
摘要翻译：用于测量三维栅极电介质结构的方法可以包括形成覆盖其上形成栅极电介质结构的鳍片的尺寸范围的测试图案。然后，通过测量栅极介电性能，然后将这些测量值与下面的翅片尺寸相关联，可以确定翅片尺寸和栅极介电性质之间的关系。然后，该关系可以应用于实际的器件结构，以基于实际器件中的鳍尺寸内插/外推栅极介电性质值。

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