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1. 发明授权

US09053834B2 Silicon carbide single crystal and manufacturing method of the same 有权
标题翻译：碳化硅单晶及其制造方法相同
公开(公告)号：US09053834B2
公开(公告)日：2015-06-09
申请号：US13194621
申请日：2011-07-29
申请人： Fusao Hirose , Jun Kojima , Kazutoshi Kojima , Tomohisa Kato , Ayumu Adachi , Koichi Nishikawa
发明人： Fusao Hirose , Jun Kojima , Kazutoshi Kojima , Tomohisa Kato , Ayumu Adachi , Koichi Nishikawa
IPC分类号： H01B1/04 , C30B31/00 , C30B29/36 , C30B23/02 , C30B23/00
CPC分类号： H01B1/04 , C30B23/00 , C30B23/02 , C30B29/36 , C30B31/00
摘要： A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.
摘要翻译：碳化硅单晶包括氮作为掺杂剂和铝作为掺杂剂。氮浓度为2×10 19 cm -3以上，铝浓度与氮浓度的比例在5％〜40％的范围内。

2. 发明申请

US20120025153A1 SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：硅碳化物单晶及其制造方法
公开(公告)号：US20120025153A1
公开(公告)日：2012-02-02
申请号：US13194621
申请日：2011-07-29
申请人： Fusao Hirose , Jun Kojima , Kazutoshi Kojima , Tomohisa Kato , Ayumu Adachi , Koichi Nishikawa
发明人： Fusao Hirose , Jun Kojima , Kazutoshi Kojima , Tomohisa Kato , Ayumu Adachi , Koichi Nishikawa
IPC分类号： H01B1/04 , C30B23/02
CPC分类号： H01B1/04 , C30B23/00 , C30B23/02 , C30B29/36 , C30B31/00
摘要： A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.
摘要翻译：碳化硅单晶包括氮作为掺杂剂和铝作为掺杂剂。氮浓度为2×10 19 cm -3以上，铝浓度与氮浓度的比例在5％〜40％的范围内。

3. 发明授权

US09598792B2 Film-forming apparatus and film-forming method 有权
公开(公告)号：US09598792B2
公开(公告)日：2017-03-21
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
CPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

4. 发明授权

US09273412B2 Film-forming apparatus and film-forming method 有权
公开(公告)号：US09273412B2
公开(公告)日：2016-03-01
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

5. 发明申请

US20120325138A1 FILM-FORMING APPARATUS AND FILM-FORMING METHOD 有权
标题翻译：薄膜成型装置和成膜方法
公开(公告)号：US20120325138A1
公开(公告)日：2012-12-27
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko SUZUKI , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko SUZUKI , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
CPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.
摘要翻译：一种成膜装置和方法，包括：用于将反应气体供应的成膜室，设置在成膜室的内壁和用于进行成膜工艺的空间之间的圆柱形衬套，主加热器用于从底侧加热设置在衬套内的衬底，设置在衬套和内壁之间的副加热器组，用于从顶侧加热衬底，其中主加热器和次加热器组是电阻的加热器，其中所述副加热器组具有设置在与所述基板最靠近的位置的第一副加热器，以及设置在所述第一子加热器上方的第二副加热器，其中所述第一副加热器将所述基板与主加热器，第二分热器以比第一副加热器低的输出加热衬套，其中主加热器，第一副加热器和第二副加热器的每个温度被单独控制。

6. 发明申请

US20140027787A1 SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE 有权
标题翻译： SIC单晶，SIC晶圆和半导体器件
公开(公告)号：US20140027787A1
公开(公告)日：2014-01-30
申请号：US14110574
申请日：2012-05-16
申请人： Itaru Gunjishima , Yasushi Urakami , Ayumu Adachi
发明人： Itaru Gunjishima , Yasushi Urakami , Ayumu Adachi
IPC分类号： H01L29/30 , H01L29/16
CPC分类号： H01L29/30 , C30B23/025 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L29/045 , H01L29/1608 , H01L29/32 , H01L29/861
摘要： An SiC single crystal having at least one orientation region where a basal plane dislocation has a high linearity and is oriented to three crystallographically-equivalent directions, and an SiC wafer and a semiconductor device which are manufactured from the SiC single crystal. The SiC single crystal can be manufactured by using a seed crystal in which the offset angle on a {0001} plane uppermost part side is small and the offset angle on an offset direction downstream side is large and growing another crystal on the seed crystal.
摘要翻译：具有至少一个取向区域的SiC单晶，其中基面位错具有高线性度并且取向为三个晶体上等同的<11-20>方向，以及由SiC单晶制造的SiC晶片和半导体器件。 SiC单晶可以通过使用其中{0001}平面最上部分侧的偏移角小并且偏移方向下游侧的偏移角大并且在晶种上生长另一晶体的晶种来制造。

7. 发明授权

US09051663B2 Manufacturing method of silicon carbide single crystal 有权
标题翻译：碳化硅单晶的制造方法
公开(公告)号：US09051663B2
公开(公告)日：2015-06-09
申请号：US13305019
申请日：2011-11-28
申请人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
发明人： Yasushi Urakami , Ayumu Adachi , Itaru Gunjishima
IPC分类号： C30B23/00 , C30B29/36 , C30B23/02 , H01L29/16
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , H01L29/1608
摘要： A manufacturing method of a SiC single crystal includes a first growth process and a re-growth process. In the first growth process, a first seed crystal made of SiC is used to grow a first SiC single crystal. In the re-growth process, a plurality of growth steps is performed for (n−1) times. In a k-th growth step, a k-th seed crystal is cut out from a grown (k−1)-th SiC single crystal, and the k-th seed crystal is used to grow a k-th SiC single crystal (n≧2 and 2≦k≦n). When an offset angle of a growth surface of the k-th seed crystal is defined as θk, at least in one of the plurality of growth steps, the offset angle θk is smaller than the offset angle θk-1.
摘要翻译： SiC单晶的制造方法包括第一生长工序和再生长工序。在第一生长过程中，使用由SiC制成的第一晶种来生长第一SiC单晶。在再生长过程中，进行多次生长步骤（n-1次）。在第k个生长步骤中，从生长的（k-1）SiC单晶中切出第k个晶种，并且将第k个晶种用于生长第k个SiC单晶（ n≥2和2＆nlE; k＆nlE; n）。当第k种子晶体的生长表面的偏移角被定义为＆amp; k时，至少在多个生长步骤中的一个中，偏移角度θ小于偏移角度θ-k 。

8. 发明申请

US20140091325A1 SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE 有权
标题翻译： SiC单晶，其制造方法，SiC波导和半导体器件
公开(公告)号：US20140091325A1
公开(公告)日：2014-04-03
申请号：US14119710
申请日：2012-06-04
申请人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
发明人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
IPC分类号： C30B23/02 , C30B29/36 , H01L29/16
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02609 , H01L29/1608 , Y10T428/21
摘要： When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.
摘要翻译：当通过重复a面生长产生具有{0001}面大直径的SiC单晶时，进行SiC单晶的a面生长，使得Sfacet（= S1×100 / S2）的Si平面侧面面积（S1）与生长面的总面积（S2）保持在20％以下。

9. 发明授权

US09029219B2 Semiconductor wafer manufacturing method, and semiconductor wafer 有权
标题翻译：半导体晶片制造方法和半导体晶片
公开(公告)号：US09029219B2
公开(公告)日：2015-05-12
申请号：US14240710
申请日：2012-08-24
申请人： Tadaaki Kaneko , Noboru Ohtani , Shoji Ushio , Ayumu Adachi , Satoru Nogami
发明人： Tadaaki Kaneko , Noboru Ohtani , Shoji Ushio , Ayumu Adachi , Satoru Nogami
IPC分类号： H01L21/02 , C30B19/04 , C30B29/36 , H01L21/67 , C30B19/12 , H01L29/16
CPC分类号： H01L21/02664 , C30B19/04 , C30B19/12 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02447 , H01L21/02529 , H01L21/02625 , H01L21/02658 , H01L21/67109 , H01L29/1608
摘要： A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer (71) is formed on a surface of a substrate (70) made of polycrystalline SiC. In the through hole formation step, through holes (71c) are formed in the carbon layer (71) formed on the substrate (70). In the feed layer formation step, a Si layer (72) and a 3C—SiC polycrystalline layer (73) are formed on a surface of the carbon layer (71). In the epitaxial layer formation step, the substrate (70) is heated so that a seed crystal made of 4H—SiC single crystal is formed on portions of the surface of the substrate (70) that are exposed through the through holes (71c), and a close-spaced liquid-phase epitaxial growth of the seed crystal is caused to form a 4H—SiC single crystal layer.
摘要翻译：制造半导体晶片的方法包括碳层形成步骤，通孔形成步骤，进料层形成步骤和外延层形成步骤。在碳层形成工序中，在由多晶SiC构成的基板（70）的表面上形成碳层（71）。在通孔形成工序中，在形成于基板（70）上的碳层（71）上形成通孔（71c）。在进料层形成步骤中，在碳层（71）的表面上形成Si层（72）和3C-SiC多晶层（73）。在外延层形成步骤中，加热衬底（70），使得在通过通孔（71c）暴露的衬底（70）的表面的部分上形成由4H-SiC单晶制成的晶种，并且引起晶种的紧密间隔的液相外延生长形成4H-SiC单晶层。

10. 发明申请

US20120073495A1 MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：碳化硅单晶的制造方法
公开(公告)号：US20120073495A1
公开(公告)日：2012-03-29
申请号：US13245934
申请日：2011-09-27
申请人： Yasushi URAKAMI , Ayumu Adachi , Itaru Gunjishima
发明人： Yasushi URAKAMI , Ayumu Adachi , Itaru Gunjishima
IPC分类号： C30B23/02
CPC分类号： C30B29/36 , C30B23/00
摘要： In a manufacturing method of a silicon carbide single crystal, a seed crystal made of silicon carbide is prepared. The seed crystal has a growth surface and a stacking fault generation region and includes a threading dislocation that reaches the growth surface. The growth surface is inclined at a predetermined angle from a (0001) plane. The stacking fault generation region is configured to cause a stacking fault in the silicon carbide single crystal when the silicon carbide single crystal is grown. The stacking fault generation region is located at an end portion of the growth surface in an offset direction that is a direction of a vector defined by projecting a normal vector of the (0001) plane onto the growth surface. The seed crystal is joined to a pedestal, and the silicon carbide single crystal is grown on the growth surface of the seed crystal.
摘要翻译：在碳化硅单晶的制造方法中，制备由碳化硅制成的晶种。籽晶具有生长面和堆垛层错产生区域，并且包括到达生长表面的穿透位错。生长面从（0001）面向预定角度倾斜。当生长碳化硅单晶时，层叠故障产生区被配置为引起碳化硅单晶中的堆垛错误。层叠故障产生区域位于生长表面的端部，该偏移方向是通过将（0001）面的法线向量投影到生长面上而限定的矢量的方向。晶种与基座接合，并且在晶种的生长面上生长碳化硅单晶。

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