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1. 发明申请

US20050050314A1 Electronic apparatus and method for starting up system of such apparatus 审中-公开
标题翻译：用于启动这种装置的系统的电子装置和方法
公开(公告)号：US20050050314A1
公开(公告)日：2005-03-03
申请号：US10892487
申请日：2004-07-16
申请人： Fumio Ohkita , Yasushi Naito , Shigeru Hirahata , Satoshi Takahashi , Tomohiko Mizuguchi , Satoshi Iimuro
发明人： Fumio Ohkita , Yasushi Naito , Shigeru Hirahata , Satoshi Takahashi , Tomohiko Mizuguchi , Satoshi Iimuro
IPC分类号： G06F12/06 , G06F9/00 , G06F9/445 , G06F12/00 , G06F13/10
CPC分类号： G06F9/4403
摘要： For providing an electronic apparatus, into which a semiconductor memory, being unavailable random accessing thereon, is installed as a memory for storing control programs therein, as well as, a start-up method for a system thereof, an electronic apparatus has a controller for executing control on each portion of the apparatus. The controller comprises a CPU 201 and a non-volatile memory 203, being electrically erasable and writable data thereof and having a function of reading out data locating at specific addresses, continuously, such as, a flash memory of “NAND” type, representatively, wherein continuous addresses are generated responding to a reset signal, so as to read out a boot program stored in a portion of the non-volatile memory, continuously, when executing the start-up of the system, and also the boot program is extended on a volatile memory 202, being accessible at random to data thereof.
摘要翻译：为了提供一种电子设备，其中不可用的半导体存储器随机存取在其中，作为其中存储控制程序的存储器以及其系统的启动方法，电子设备具有用于对设备的每个部分执行控制。控制器包括CPU 201和非易失性存储器203，它们是电可擦除和可写入的数据，并且具有连续地读出特定地址的数据的功能，例如“NAND”类型的闪速存储器，其中响应于复位信号产生连续地址，以便在执行系统的启动时连续地读出存储在非易失性存储器的一部分中的引导程序，还引导程序被扩展易失性存储器202可随机访问其数据。

2. 发明授权

US08290344B2 Video recording/reproducing apparatus and a television receiver including the same therein 有权
标题翻译：视频记录/再现装置和包括其的电视接收机
公开(公告)号：US08290344B2
公开(公告)日：2012-10-16
申请号：US11641768
申请日：2006-12-20
申请人： Katsunobu Kimura , Yasushi Naito , Satoshi Takahashi , Satoshi Iimuro
发明人： Katsunobu Kimura , Yasushi Naito , Satoshi Takahashi , Satoshi Iimuro
IPC分类号： H04N5/94
CPC分类号： H04N9/8042 , H04N5/4401 , H04N5/781 , H04N9/7921 , H04N9/8205 , H04N21/42638 , H04N21/4334 , H04N21/4348 , H04N21/4402 , H04N21/47214 , H04N21/4884 , H04N21/8106 , H04N21/8126 , H04N21/8543
摘要： In a television receiver including a video recording/reproducing apparatus therein, since reduction is quick in a recording space thereof if recording the high-definition television broadcast signal as it is, even including a recording medium, such as, a HDD of large capacity, for example, video, audio and caption data are extracted within a video extract portion 3, an audio extract portion 4, a caption extract portion 5 from a MPEG2-TS (Transport Stream) signal (TS=video+audio+caption data+BML (Broadcast Markup Language)+other data), but except for the BML data. And, those data extracted are recorded in a recording/reproducing portion 7.
摘要翻译：在包括其中的视频记录/再现装置的电视接收机中，由于如果直接记录高分辨率电视广播信号，在其记录空间中的缩小很快，所以即使包括诸如大容量的HDD的记录介质，例如，在视频提取部分3，音频提取部分4，来自MPEG2-TS（传输流）信号（TS =视频+音频+字幕数据+ BML）的字幕提取部分5中提取视频，音频和字幕数据（广播标记语言）+其他数据），但BML数据除外。并且，提取的数据被记录在记录/再现部分7中。

3. 发明申请

US20070230894A1 Video recording/reproducing apparatus and a television receiver including the same therein 有权
标题翻译：视频记录/再现装置和包括其的电视接收机
公开(公告)号：US20070230894A1
公开(公告)日：2007-10-04
申请号：US11641768
申请日：2006-12-20
申请人： Katsunobu Kimura , Yasushi Naito , Satoshi Takahashi , Satoshi Iimuro
发明人： Katsunobu Kimura , Yasushi Naito , Satoshi Takahashi , Satoshi Iimuro
IPC分类号： H04N9/79 , H04B1/66
CPC分类号： H04N9/8042 , H04N5/4401 , H04N5/781 , H04N9/7921 , H04N9/8205 , H04N21/42638 , H04N21/4334 , H04N21/4348 , H04N21/4402 , H04N21/47214 , H04N21/4884 , H04N21/8106 , H04N21/8126 , H04N21/8543
摘要： In a television receiver including a video recording/reproducing apparatus therein, since reduction is quick in a recording space thereof if recording the high-definition television broadcast signal as it is, even including a recording medium, such as, a HDD of large capacity, for example, video, audio and caption data are extracted within a vide extract portion 3, an audio extract portion 4, a caption extract portion 5 from a MPEG2-TS (Transport Stream) signal (TS=video+audio+caption data+BML (Broadcast Markup Language)+other data), but except for the BML data. And, those data extracted are recorded in a recording/reproducing portion 7.
摘要翻译：在包括其中的视频记录/再现装置的电视接收机中，由于如果直接记录高分辨率电视广播信号，在其记录空间中的缩小很快，所以即使包括诸如大容量的HDD的记录介质，例如，在视频提取部分3，音频提取部分4，来自MPEG2-TS（传输流）信号（TS =视频+音频+字幕数据+ BML）的字幕提取部分5中提取视频，音频和字幕数据（广播标记语言）+其他数据），但BML数据除外。并且，提取的数据被记录在记录/再现部分7中。

4. 发明授权

US5856219A Method of fabricating a high-density dynamic random-access memory 失效
标题翻译：制造高密度动态随机存取存储器的方法
公开(公告)号：US5856219A
公开(公告)日：1999-01-05
申请号：US912686
申请日：1997-08-18
申请人： Yasushi Naito , Yutaka Ito , Yuichi Hirofuji
发明人： Yasushi Naito , Yutaka Ito , Yuichi Hirofuji
IPC分类号： H01L23/522 , H01L21/768 , H01L21/8239 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/1052 , H01L27/10873
摘要： The invention relates to a high-density DRAM fabrication technique for forming a source/drain contact between word lines in a self-alignment manner, with the offset length between a source region and a drain region of a peripheral transistor maintained at an adequate value. After gate electrodes (i.e. word lines) are formed, a first insulating layer, which is thin enough not to block up space defined between the word lines, is deposited. The source/drain contact is etched as deep as the first insulating layer is thick to form an extraction electrode made of polycrystalline silicon. A second insulating layer is deposited until a spacer thickness (i.e. the sum of the film thickness of the second insulating layer and the film thickness of the first insulating layer) for determining the offset length is obtained. The first and second insulating layers are etched back for a distance corresponding to the sum of the film thickness of the second insulating layer and the film thickness of the first insulating layer so that a spacer (i.e. the residue of the insulating layers) is left on the side walls of the gate electrode. An implantation of highlevel impurities is performed to form heavily doped source and drain regions of a peripheral transistor. In-cell self-align contact is made possible while maintaining the offset length of the heavily doped source and drain regions
摘要翻译：本发明涉及用于以自对准方式在字线之间形成源极/漏极接触的高密度DRAM制造技术，其中外围晶体管的源极区域和漏极区域之间的偏移长度保持在足够的值。在形成栅电极（即字线）之后，沉积足够薄而不能阻挡字线之间限定的空间的第一绝缘层。源极/漏极接触被蚀刻为第一绝缘层较厚的深度，以形成由多晶硅制成的引出电极。沉积第二绝缘层，直到获得用于确定偏移长度的间隔物厚度（即第二绝缘层的膜厚度和第一绝缘层的膜厚度之和）。第一绝缘层和第二绝缘层被回蚀一段对应于第二绝缘层的膜厚度与第一绝缘层的膜厚之和的距离，使得间隔物（即，绝缘层的残留物）留在栅电极的侧壁。执行高级杂质的注入以形成外围晶体管的重掺杂源极和漏极区域。在保持重掺杂源极和漏极区域的偏移长度的同时使单元内自对准接触成为可能

5. 发明授权

US5459101A Method for fabricating a semiconductor device comprising a polycide structure 失效
标题翻译：一种制造半导体器件的方法，该半导体器件包括多晶硅结构
公开(公告)号：US5459101A
公开(公告)日：1995-10-17
申请号：US266218
申请日：1994-06-27
申请人： Toyokazu Fujii , Yasushi Naito
发明人： Toyokazu Fujii , Yasushi Naito
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8238 , H01L23/532 , H01L21/265 , H01L21/283
CPC分类号： H01L21/76889 , H01L21/28061 , H01L21/823842 , H01L23/53271 , H01L2924/0002
摘要： A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein. The p-type impurities are implanted into the silicide layer in order to have a substantially uniform concentration over the entire portion thereof, so that the p-type impurities in the p-type region of the polysilicon layer do not diffuse into the silicide film by a post heat treatment.
摘要翻译：一种半导体器件，包括半导体衬底，形成在半导体衬底上的绝缘膜和在绝缘膜上形成的包括多晶硅层和硅化物层的多晶硅膜。多晶硅层包括在其中扩散有p型杂质的p型区域和在其中扩散n型杂质的n型区域。将p型杂质注入到硅化物层中以在其整个部分上具有基本上均匀的浓度，使得多晶硅层的p型区域中的p型杂质不会通过以下方式扩散到硅化物膜中：后热处理。

6. 发明授权

US5242852A Method for manufacturing a semiconductor memory device 失效
标题翻译：半导体存储器件的制造方法
公开(公告)号：US5242852A
公开(公告)日：1993-09-07
申请号：US944883
申请日：1992-09-11
申请人： Kazuhiro Matsuyama , Masanori Fukumoto , Yasushi Naito , Hisashi Ogawa , Shozo Okada
发明人： Kazuhiro Matsuyama , Masanori Fukumoto , Yasushi Naito , Hisashi Ogawa , Shozo Okada
IPC分类号： H01L21/02 , H01L21/768 , H01L21/8242
CPC分类号： H01L27/10852 , H01L21/768 , H01L28/40 , Y10S438/908
摘要： In a method for manufacturing DRAMs in a stacked memory cell type, an edge portion of each bit line is bared upon etching a first insulating film, the bared edge portion is etched to from an opening and an inner peripheral surface of the opening is covered by a second insulating film. There is also disclosed a method wherein second and third insulating films and second conductive film are stacked on a first insulating film, a second conductive film is formed and the second conductive film and the first conductive film are partially etched whereby the unetched portions of the first conductive film serve as electrode planes of charge storage electrodes.
摘要翻译：在以堆叠式存储单元型制造DRAM的方法中，蚀刻第一绝缘膜时，每个位线的边缘部分被露出，裸露的边缘部分被从开口蚀刻并且开口的内周面被第二绝缘膜。还公开了一种方法，其中第二绝缘膜和第三绝缘膜和第二导电膜堆叠在第一绝缘膜上，形成第二导电膜，并且第二导电膜和第一导电膜被部分蚀刻，由此第一绝缘膜的未蚀刻部分导电膜用作电荷存储电极的电极平面。

7. 发明申请

US20140151709A1 DISPLAY PANEL AND PRODUCTION METHOD FOR SAME 有权
标题翻译：显示面板及其制作方法
公开(公告)号：US20140151709A1
公开(公告)日：2014-06-05
申请号：US14236361
申请日：2011-08-03
申请人： Seiji Nishiyama , Yasushi Naito
发明人： Seiji Nishiyama , Yasushi Naito
IPC分类号： H01L27/32
CPC分类号： H01L27/3246 , G02B5/201 , H01L27/3211 , H01L27/3218 , H01L27/3262 , H01L51/0031
摘要： Provided is a display panel having a plurality of pixels arranged in a matrix of rows and columns. Each of the pixels is composed of a plurality of first sub-pixels emitting light of different colors. Each of the first sub-pixels is composed of a plurality of second sub-pixels emitting light of the same color. Each of the second sub-pixels includes: a first electrode; a second electrode above the first electrode; and a light-emitting layer between the first electrode and the second electrode.
摘要翻译：提供了具有排列成行和列的矩阵的多个像素的显示面板。每个像素由发射不同颜色的光的多个第一子像素组成。每个第一子像素由发射相同颜色的光的多个第二子像素构成。每个第二子像素包括：第一电极; 在所述第一电极上方的第二电极; 以及在第一电极和第二电极之间的发光层。

8. 发明申请

US20130310289A1 LUBRICATING OIL COMPOSITION FOR INTERNAL COMBUSTION ENGINES 审中-公开
标题翻译：用于内燃机的润滑油组合物
公开(公告)号：US20130310289A1
公开(公告)日：2013-11-21
申请号：US13818329
申请日：2011-08-19
申请人： Kazuhiro Umehara , Kenji Yamamoto , Masaki Maruyama , Yasushi Naito , Satoru Yoshida
发明人： Kazuhiro Umehara , Kenji Yamamoto , Masaki Maruyama , Yasushi Naito , Satoru Yoshida
IPC分类号： C10M169/04
CPC分类号： C10M169/04 , C10M135/18 , C10M2203/1025 , C10M2203/1085 , C10M2205/0285 , C10M2207/026 , C10M2207/262 , C10M2207/289 , C10M2209/084 , C10M2215/06 , C10M2215/064 , C10M2215/28 , C10M2219/068 , C10M2223/045 , C10N2210/06 , C10N2220/022 , C10N2230/02 , C10N2230/04 , C10N2230/08 , C10N2230/10 , C10N2230/42 , C10N2230/54 , C10N2240/10 , C10N2240/102 , C10N2240/104 , C10N2210/02
摘要： Provided is a lubricating oil composition for an internal combustion engine, including: an organic molybdenum compound as a component (A); a base oil having a kinematic viscosity at 100° C. of 25 mm2/s or more as a component (B); and a base oil having a kinematic viscosity at 100° C. of less than 12.5 mm2/s as a component (C), in which the composition has a kinematic viscosity at 100° C. of 5 mm2/s to 12.5 mm2/s and a phosphorus content of 800 ppm or less.
摘要翻译：提供一种用于内燃机的润滑油组合物，其包括：作为组分（A）的有机钼化合物; 作为组分（B），在100℃下的运动粘度为25mm 2 / s以上的基油; 和作为组分（C）的在100℃下的运动粘度低于12.5mm 2 / s的基础油，其中组合物在100℃下的运动粘度为5mm 2 / s至12.5mm 2 / s 磷含量为800ppm以下。

9. 发明授权

US07037733B2 Method for measuring temperature, annealing method and method for fabricating semiconductor device 有权
标题翻译：测量温度的方法，退火方法和制造半导体器件的方法
公开(公告)号：US07037733B2
公开(公告)日：2006-05-02
申请号：US10343762
申请日：2002-07-01
申请人： Satoshi Shibata , Junji Hirase , Tatsuo Sugiyama , Emi Kanasaki , Fumitoshi Kawase , Yasushi Naito
发明人： Satoshi Shibata , Junji Hirase , Tatsuo Sugiyama , Emi Kanasaki , Fumitoshi Kawase , Yasushi Naito
IPC分类号： H01L21/66 , G01N25/00 , G01J5/00
CPC分类号： G01J5/0003
摘要： When the emissivity ε on the reverse face of a substrate 10 is measured during annealing processing for the substrate 10, films made from a material that varies the emissivity ε, such as a first DPS film 15 used for forming a plug 15A, a second DPS film 17 used for forming a capacitor lower electrode 17A and a third DPS film 20 used for forming a capacitor upper electrode 20A, are formed on the top face of the substrate 10. On the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate 10.
摘要翻译：当在衬底10的退火处理期间测量衬底10的反面上的发射率ε时，由用于形成插头15A的第一DPS膜15，例如用于形成插头15A的第一DPS膜15的材料制成的膜，第二用于形成用于形成电容器上电极20A的电容器下电极17A和第三DPS膜20的DPS膜17形成在基板10的顶面上。另一方面，没有由材料制成的膜在基板10的背面上形成改变发射率ε（例如DPS膜）。

10. 发明授权

US5314848A Method for manufacturing a semiconductor device using a heat treatment according to a temperature profile that prevents grain or particle precipitation during reflow 失效
标题翻译：根据温度分布的热处理制造半导体器件的方法，该温度分布防止在回流期间晶粒或颗粒沉淀
公开(公告)号：US5314848A
公开(公告)日：1994-05-24
申请号：US764846
申请日：1991-09-24
申请人： Takatoshi Yasui , Chiaki Kudo , Ichiro Nakao , Toyokazu Fujii , Yuka Terai , Shinichi Imai , Hiroshi Yamamoto , Yasushi Naito
发明人： Takatoshi Yasui , Chiaki Kudo , Ichiro Nakao , Toyokazu Fujii , Yuka Terai , Shinichi Imai , Hiroshi Yamamoto , Yasushi Naito
IPC分类号： H01L21/3105 , H01L21/768 , H01L21/00 , H01L21/02 , H01L21/324 , H01L21/477
CPC分类号： H01L21/76819 , H01L21/3105 , Y10S148/133 , Y10S438/909
摘要： Described is a method for manufacturing semiconductor devices which includes a heat treating process for heating and cooling semiconductor substrates mounted on a boat at a predetermined pitch according to a predetermined temperature profile, in order to flatten the surface of each semiconductor substrate by reflowing an insulating film containing impurities, for example, a BPSG film formed on the substrate. In the heat treating process, one of the control factors which affects the formation of grains or particles due to the impurities contained in the insulating film is set so as to prevent the impurities from generating grains or particles during the heat treatment. Also disclosed is a method of preventing the generation of grains or particles by widening the pitch of the mounted substrates.
摘要翻译：描述了一种用于制造半导体器件的方法，其包括根据预定温度分布以预定间距对安装在船上的半导体衬底进行加热和冷却的热处理工艺，以便通过回流绝缘膜来平坦化每个半导体衬底的表面含有杂质，例如在基板上形成的BPSG膜。在热处理过程中，设定影响绝缘膜中含有杂质的晶粒或颗粒形成的控制因素之一，以防止杂质在热处理过程中产生晶粒或颗粒。还公开了通过扩大安装的基板的间距来防止颗粒或颗粒的产生的方法。

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