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1. 发明授权

US5375435A Process and apparatus for controlling thread feed in a warp knitting machine 失效
标题翻译：在经编机中控制送丝的方法和装置
公开(公告)号：US5375435A
公开(公告)日：1994-12-27
申请号：US138702
申请日：1993-10-18
申请人： Friedrich Gille , Georg Kraus
发明人： Friedrich Gille , Georg Kraus
IPC分类号： D04B27/10 , D04B27/22 , D04B27/34
CPC分类号： D04B27/34 , D04B27/22
摘要： A process or apparatus can control thread provision in a warp knitting machine by means of a computer (6). The computer operation involves pattern data (MD) supplied as a sequence of numbers. These numbers are provided to a recognition routine (ER), which for every warp course (line W) determines the lapping type (LA) that should be formed and the shogging distance (SW) prescribed. Tables are stored for providing a thread provision value (FZ) for each combination of lapping type (LA), thread take-off value (WA), and a shogging distance (SW). Based upon (a) the determined lapping type, (b) the inputted fabric take-off value, (c) the inputtable external operating parameters or influences, and (d) the determined shogging distance, the thread provision value for this warp course is read out and utilized for controlling thread provision. An arrangement for the control of the thread provision means of a warp knitting machine (1) will comprise (a) a computer (6), a table storage means (13), (b) a program storage means (11) for a programmed recognition routine, (c) an evaluation device (12) for reading out a table (100 through 107 ), and (d) a control device (5) which by use of the thread provision values read from the tables controls the thread provision.
摘要翻译：一种工艺或设备可以通过计算机（6）来控制经编机中的螺纹供应。计算机操作涉及作为数字序列提供的模式数据（MD）。这些数字被提供给识别程序（ER），其对于每个经线（线W）确定应该形成的研磨类型（LA）和规定的捶打距离（SW）。存储表以提供研磨类型（LA），送丝值（WA）和捶击距离（SW）的每种组合的线程提供值（FZ）。基于（a）确定的研磨类型，（b）输入的织物起飞值，（c）可输入的外部操作参数或影响，以及（d）确定的踩踏距离，该经线过程的螺纹提供值为读出并用于控制线程提供。一种用于控制经编机（1）的纱线提供装置的装置将包括（a）计算机（6），桌子存储装置（13），（b）用于编程的程序存储装置识别程序，（c）用于读出表（100至107）的评估装置（12）和（d）通过使用从表读出的线程提供值来控制线程提供的控制装置（5）。

2. 发明授权

US5658472A Method for producing deep vertical structures in silicon substrates 失效
标题翻译：在硅衬底中生产深垂直结构的方法
公开(公告)号：US5658472A
公开(公告)日：1997-08-19
申请号：US477059
申请日：1995-06-07
申请人： Johann Bartha , Johann Greschner , Robert Junginger , Georg Kraus
发明人： Johann Bartha , Johann Greschner , Robert Junginger , Georg Kraus
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/308 , H01L21/82
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/3081
摘要： A method is provided for producing deep substantially vertical structures in silicon substrates, wherein in a first step, the silicon substrate is anisotropically plasma etched to a first predetermined depth, thereby creating a first structure. Subsequently, the surface of the substrate is covered conformally with an etch-resistant coating, and the horizontal parts of said coating are selectively removed. Following this removal, the substrate is anisotropically plasma etched at low temperatures to a second predetermined depth with a mixture of SF.sub.6 /O.sub.2, whereby a second structure is created. Finally, the vertical parts of the coating are removed.
摘要翻译：提供一种用于在硅衬底中产生深基本上垂直的结构的方法，其中在第一步骤中，将硅衬底各向异性地等离子体蚀刻到第一预定深度，从而产生第一结构。随后，基材的表面与耐蚀刻涂层共形地覆盖，并且选择性地去除所述涂层的水平部分。在该去除之后，将衬底在低温下各向异性地刻蚀至具有SF6 / O2混合物的第二预定深度，由此产生第二结构。最后，去除涂层的垂直部分。

3. 发明授权

US5162133A Process for fabricating silicon carbide films with a predetermined stress 失效
标题翻译：用于制造具有预定应力的碳化硅膜的工艺
公开(公告)号：US5162133A
公开(公告)日：1992-11-10
申请号：US631138
申请日：1990-12-20
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Olaf Wolter
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Olaf Wolter
IPC分类号： C01B31/36 , C23C16/32 , C23C16/50 , C23C16/52 , G01Q30/12
CPC分类号： C23C16/325
摘要： The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps:a) introducing a gas mixture of silane (SiH.sub.4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber;b) reacting the silane and ethylene at a temperature >400.degree. C., and in a total pressure range of about 26.6 to 266 Pa, at an RF power
摘要翻译：本发明涉及通过控制沉积参数来制造具有预定应力的碳化硅膜和膜的方法，其包括以下步骤：a）以大约流速引入硅烷（SiH4）/氦和乙烯的气体混合物 1000 sccm / min。和约10sccm / min。进入反应室; b）在温度> 400℃，总压力范围约26.6至266Pa，在13.56MHz的RF功率<100W下使硅烷和乙烯反应，所述硅烷和乙烯之间的反应开始并通过辉光放电增强。在优选的实施方案中，本征薄膜应力是拉伸，硅烷和乙烯在约500℃的温度下，总压力范围超过106.4Pa，在13.56MHz的RF功率为75W下反应。拉伸应力膜可以涂覆有金属吸收层，在吸收层中产生期望的掩模图案，并且从湿蚀刻的背面去除基底。所得的X射线掩模具有光滑的表面，优异的尺寸稳定性和X射线辐射的透明度。

4. 发明授权

US4557796A Method of dry copper etching and its implementation 失效
标题翻译：干铜蚀刻方法及其实现
公开(公告)号：US4557796A
公开(公告)日：1985-12-10
申请号：US636660
申请日：1984-08-01
申请人： Frank Druschke , Georg Kraus , Ulrich Kuenzel , Wolf D. Ruh , Rolf Schaefer
发明人： Frank Druschke , Georg Kraus , Ulrich Kuenzel , Wolf D. Ruh , Rolf Schaefer
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H05K3/08 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H05K3/08 , C23F4/00 , H01L21/32136 , H05K2201/0166 , H05K2203/095
摘要： According to this method, copper is dry etched in a glow discharge containing compounds with at least one methyl or methylene group, particularly at temperatures close to room temperature.The method is applied in particular for making conductors on or in module substrates or circuit cards, solder spots, and the wiring of magnetic thin films.
摘要翻译：根据该方法，铜在具有至少一个甲基或亚甲基的化合物的辉光放电中被干蚀刻，特别是在接近室温的温度下。该方法特别用于在导体上或在模块衬底或电路卡中形成导体，焊点和磁性薄膜的布线。

5. 发明授权

US4424102A Reactor for reactive ion etching and etching method 失效
标题翻译：用于反应离子蚀刻和蚀刻方法的反应器
公开(公告)号：US4424102A
公开(公告)日：1984-01-03
申请号：US479405
申请日：1983-03-28
申请人： Christine Brandeis , Jurgen Kempf , Georg Kraus , Ulrich Ku/ nzel
发明人： Christine Brandeis , Jurgen Kempf , Georg Kraus , Ulrich Ku/ nzel
IPC分类号： C23F4/00 , H01J37/32 , H01J37/34 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/673 , C23C15/00
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32623 , H01J37/3266 , H01J37/3405
摘要： A reactor comprising a plate-shaped cathode that is horizontally arranged and connected to an alternating voltage, in a ground connected casing, and gas inlet and gas outlet lines. The cathode is equipped with means for generating local magnetic fields restricted to the region of the individually supported substrates. The cathode can be furthermore have holes or openings in which are arranged substrate holders shiftable or movable vertically to relate to the substrate surface. The substrates are etched in the reactor by means of a plasma which is produced from at least one reactive gas. Each substrate is exposed to at least one local magnetic field. If a mostly chemically etchable material is to be etched in the presence of a mostly physically etchable material, to a much stronger extent than the latter, the advantageous etching speed ratio can be set in that the substrates are additionally raised over the cathode surface.
摘要翻译：一种反应器，包括水平布置并连接到交流电压的板状阴极，在接地壳体中，以及气体入口和气体出口管线。阴极配备有用于产生限于单独支撑的衬底的区域的局部磁场的装置。阴极还可以具有孔或开口，其中布置有衬底保持器，其可移动或垂直移动以涉及衬底表面。通过由至少一种反应性气体产生的等离子体在反应器中蚀刻基板。每个衬底暴露于至少一个局部磁场。如果在大多数物理上可蚀刻的材料的存在下大部分化学蚀刻的材料被蚀刻到比后者更强的程度，则可以设置有利的蚀刻速度比，即衬底在阴极表面上另外升高。

6. 发明授权

US5979628A Elastic wear indicator for a friction clutch 失效
标题翻译：用于摩擦离合器的弹性磨损指示器
公开(公告)号：US5979628A
公开(公告)日：1999-11-09
申请号：US71686
申请日：1998-05-01
申请人： Jorg Lampe , Thomas Stretz , Michael Weiss , Georg Kraus , Reinhold Weidinger , Klaus Gorzitzke
发明人： Jorg Lampe , Thomas Stretz , Michael Weiss , Georg Kraus , Reinhold Weidinger , Klaus Gorzitzke
IPC分类号： F16D13/75
CPC分类号： F16D13/757
摘要： The invention relates to a motor vehicle friction clutch with automatic wear compensation, in which a wear indicator is provided that, due to its elasticity, exerts a clamping force on the wear adjustment device without any additional spring elements.
摘要翻译：本发明涉及一种具有自动磨损补偿的机动车辆摩擦离合器，其中提供磨损指示器，其由于其弹性而在没有任何附加弹簧元件的情况下在磨损调节装置上施加夹紧力。

7. 发明授权

US5321878A Method for removing a motor vehicle friction clutch 失效
标题翻译：汽车摩擦离合器的拆卸方法
公开(公告)号：US5321878A
公开(公告)日：1994-06-21
申请号：US7848
申请日：1993-01-22
申请人： Bernhard Schierling , Georg Kraus
发明人： Bernhard Schierling , Georg Kraus
IPC分类号： F16D13/58 , F16D13/70 , B23P19/00 , F16D13/00
CPC分类号： F16D13/583 , F16D13/58 , F16D13/70 , Y10T29/4973 , Y10T29/49822 , Y10T29/49824
摘要： The invention relates to a method for removing a motor vehicle friction clutch of modular design and to friction clutches suitable for this method. The arrangement of openings in the clutch plate and the use of specific tools for venting the friction clutch enable the clutch plate to be orientated such that the fastening screws may be opened by corresponding screwdrivers through the slots of the spring tongues of the diaphragm spring and through the openings in the clutch plate. This enables a clutch module to be exchanged completely after damage or normal wear.
摘要翻译：本发明涉及一种用于去除模块化设计的摩托车摩擦离合器和适用于该方法的摩擦离合器的方法。离合器板中的开口的布置以及使用用于排出摩擦离合器的特定工具能够使离合器板定向，使得紧固螺钉可以通过相应的螺丝刀通过隔膜弹簧的弹簧舌的槽而被打开，并通过离合器板上的开口。这样可以使损伤或正常磨损后的离合器组件完全更换。

8. 发明授权

US5051379A Method of producing micromechanical sensors for the AFM/STM profilometry and micromechanical AFM/STM sensor head 失效
标题翻译：用于AFM / STM轮廓测量和微机械AFM / STM传感器头的微机械传感器的生产方法
公开(公告)号：US5051379A
公开(公告)日：1991-09-24
申请号：US568306
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
IPC分类号： G01B7/34 , B81C1/00 , C23F1/00 , G01N27/00 , G01Q60/16 , G01Q60/38 , G01Q70/02 , G02B21/00 , H01J37/28 , H01L21/302 , H01L41/09
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q60/04 , G01Q60/38
摘要： A method and apparatus is described for a micromechanical sensor for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite end. The method incorporated the steps of coating a wafer substrate; producing a mask for the desired cantilever beam pattern on the top side of the wafer; and a mask on the bottom side of the wafer; planarizing said cantilever beam pattern with photoresist; producing a mask for the desired tip in the area of the cantilever beam pattern producing the desired tip using an etching step, and simultaneously transferring the cantilever beam pattern from the upper to the lower part of the layer; and removing the supporting wafer material by etching through the bottom side mask. A mask for the desired cantilever beam pattern and the tip pattern contains all relevant information for a subsequent substrate etching process is described for etching step by step into a silicon substrate.

9. 发明授权

US4969415A PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides 失效
公开(公告)号：US4969415A
公开(公告)日：1990-11-13
申请号：US458006
申请日：1989-12-28
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
IPC分类号： C23C16/08 , C23C16/30 , C23C16/448 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4488 , C23C16/08 , H01L21/28556 , Y10S148/147
摘要： The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

10. 发明授权

US5575183A Dual-mass flywheel 失效
公开(公告)号：US5575183A
公开(公告)日：1996-11-19
申请号：US449529
申请日：1995-05-24
申请人： Bernhard Schierling , Hilmar Gobel , Georg Kraus , Bernd Stockmann
发明人： Bernhard Schierling , Hilmar Gobel , Georg Kraus , Bernd Stockmann
IPC分类号： F16F15/131 , F16F15/31 , F16D3/14
CPC分类号： F16F15/1315 , F16F15/131 , F16F15/13142 , F16F2226/00
摘要： A dual-mass flywheel comprises a primary mass (7) which is adapted to be fastened to a crankshaft (3) of an internal-combustion engine concentric to an axis of rotation (1) and a secondary mass (9) which is mounted for rotation relative to the primary mass (7) around the axis of rotation (1). The secondary mass (9) is coupled in a rotationally elastic manner to the primary mass (7) by a torsion-damping arrangement (19). The primary mass has two formed sheet-metal parts (35, 37) which define a cavity (47) to accommodate springs (17) of the torsion-damping arrangement (19) and is provided with supplementary masses in order to increase the moment of inertia. The supplementary masses may be made up of extensions (45, 63) of the formed sheet-metal parts (35, 37) or of additionally welded-on mass-rings (67). In particular, the supplementary masses are located in a region which is generally radially outwardly of the secondary mass (9).

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