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1. 发明授权

US07348258B2 Method and device for controlled cleaving process 有权
标题翻译：控制裂解过程的方法和装置
公开(公告)号：US07348258B2
公开(公告)日：2008-03-25
申请号：US10913701
申请日：2004-08-06
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/26506 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2658 , H01L21/76254
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供了扩张切割前沿以释放供体来自供体衬底的剩余部分的材料。

2. 发明授权

US06321134B1 Clustertool system software using plasma immersion ion implantation 失效
标题翻译：使用等离子体浸没离子注入的Clustertool系统软件
公开(公告)号：US06321134B1
公开(公告)日：2001-11-20
申请号：US09124156
申请日：1998-07-28
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： G06F1900
CPC分类号： H01L21/67167 , C23C14/48 , C23C14/54 , C23C14/56 , C23C16/54 , H01J37/32412 , H01J37/32743 , H01L21/67069 , H01L21/67092 , H01L21/67173 , H01L21/67213
摘要： A cluster tool system having a computer memory. The memory has a variety of codes for operating a plasma immersion ion implantation chamber. In some embodiments, the cluster tool method also includes computer codes for a controlled cleaving process chamber, as well as others.
摘要翻译：具有计算机存储器的集群工具系统。存储器具有用于操作等离子体浸没离子注入室的各种代码。在一些实施例中，群集工具方法还包括用于受控切割处理室以及其他的计算机代码。

3. 发明授权

US6155909A Controlled cleavage system using pressurized fluid 失效
标题翻译：使用加压流体的受控裂解系统
公开(公告)号：US6155909A
公开(公告)日：2000-12-05
申请号：US26115
申请日：1998-02-19
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： B24C1/00 , B26F3/00 , B26F3/02 , B32B5/16 , B81C1/00 , H01L21/00 , H01L21/18 , H01L21/20 , H01L21/22 , H01L21/223 , H01L21/265 , H01L21/30 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/36 , H01L21/38 , H01L21/425 , H01L21/44 , H01L21/46 , H01L21/461 , H01L21/48 , H01L21/50 , H01L21/762 , H01L21/78 , H01L21/8238
CPC分类号： H01L21/187 , B81C1/0038 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , B81C2201/0191 , B81C2201/0192 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底所选深度以上的材料（12）和所选深度处的图案的颗粒。诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供扩张切割前缘以释放供体来自供体衬底的剩余部分的材料。

4. 发明授权

US5994207A Controlled cleavage process using pressurized fluid 失效
公开(公告)号：US5994207A
公开(公告)日：1999-11-30
申请号：US26027
申请日：1998-02-19
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： B24C1/00 , B26F3/00 , B26F3/02 , B32B5/16 , B81C1/00 , H01L21/00 , H01L21/18 , H01L21/20 , H01L21/22 , H01L21/223 , H01L21/265 , H01L21/30 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/36 , H01L21/38 , H01L21/425 , H01L21/44 , H01L21/46 , H01L21/461 , H01L21/48 , H01L21/50 , H01L21/762 , H01L21/78 , H01L21/8238
CPC分类号： H01L21/187 , B81C1/0038 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , B81C2201/0191 , B81C2201/0192 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

5. 发明授权

US6103599A Planarizing technique for multilayered substrates 失效
标题翻译：多层基板的平面化技术
公开(公告)号：US6103599A
公开(公告)日：2000-08-15
申请号：US89931
申请日：1998-06-03
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L21/306 , H01L21/762 , H01L21/00
CPC分类号： H01L21/30604 , H01L21/76254 , Y10S438/977
摘要： The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially uniform surface. The wafer includes a bulk substrate 11 and an insulating layer 13 formed overlying the bulk substrate 15. A film of semiconductor material is formed overlying the insulating layer. Surface non-uniformities are formed overlying and in the film of semiconductor material. The non-uniformities are implanted, and are bordered by a substantially uniform interface 17 at a selected depth underlying the surface non-uniformities. The substantially uniform interface provides a substantially uniform resulting surface for the SOI wafer.
摘要翻译：本发明提供了具有新颖植入层的SOI晶片等多层晶片10。该植入层是可移除的并且提供具有基本均匀表面的所得晶片。该晶片包括大块基片11和形成在本体基片15上的绝缘层13.半导体材料薄膜覆盖在绝缘层上。在半导体材料的膜上形成表面非均匀性。非均匀性被植入，并且在表面非均匀性下方的选定深度处由基本上均匀的界面17界定。基本上均匀的界面为SOI晶片提供了基本上均匀的所得表面。

6. 发明授权

US06207005B1 Cluster tool apparatus using plasma immersion ion implantation 失效
标题翻译：使用等离子体浸没离子注入的集群工具装置
公开(公告)号：US06207005B1
公开(公告)日：2001-03-27
申请号：US09124161
申请日：1998-07-28
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L2100
CPC分类号： H01L21/67167 , C23C14/48 , C23C14/54 , C23C14/56 , C23C16/54 , H01J37/32412 , H01J37/32743 , H01L21/67069 , H01L21/67092 , H01L21/67173 , H01L21/67213
摘要： A cluster tool assembly 10, 200, 300 using plasma immersion ion implantation chamber. In some embodiments, the cluster tool assembly also includes a controlled cleaving process chamber, as well as others.
摘要翻译：使用等离子体浸没离子注入室的簇工具组件10,200,300。在一些实施例中，群集工具组件还包括受控的分解处理室以及其它。

7. 发明授权

US06291313B1 Method and device for controlled cleaving process 有权
公开(公告)号：US06291313B1
公开(公告)日：2001-09-18
申请号：US09313959
申请日：1999-05-18
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L2122
CPC分类号： H01L21/76254 , H01L21/187 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/7813
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

8. 发明授权

US06265328B1 Wafer edge engineering method and device 失效
标题翻译：晶圆边工程方法及装置
公开(公告)号：US06265328B1
公开(公告)日：2001-07-24
申请号：US09239477
申请日：1999-01-28
申请人： Francois J. Henley , Nathan Cheung , William G. Eng , Igor J. Malik
发明人： Francois J. Henley , Nathan Cheung , William G. Eng , Igor J. Malik
IPC分类号： B05C1102
CPC分类号： H01L21/67092 , H01L21/6708 , H01L21/6715
摘要： The present invention provides an apparatus (400) (500) for abating edge material from a substrate, e.g., SOI. The apparatus includes, among other elements, a housing and a rotatable member (401) coupled to the housing. The rotatable member is a susceptor, which is relatively flat for securing a substrate. A movable dispensing head (421) is coupled to the housing and is overlying the rotatable member. The movable dispensing head (421) is operable to emit a stream of directed fluid to one or more locations of the susceptor. The apparatus also includes a fluid source, which is coupled to the movable dispensing head. The fluid source provides fluid to ablate material from the substrate.
摘要翻译：本发明提供一种用于从衬底（例如SOI）减缓边缘材料的装置（400）（500）。除了其它元件之外，该装置包括壳体和联接到壳体的可旋转构件（401）。可旋转构件是一个基座，它相对平坦，用于固定基板。可移动分配头（421）联接到壳体并且覆盖在可旋转构件上。可移动分配头（421）可操作以将定向流体流发射到基座的一个或多个位置。该装置还包括流体源，其连接到可移动分配头。流体源提供流体以从基底中烧蚀材料。

9. 发明授权

US06187110B1 Device for patterned films 有权
标题翻译：图案薄膜装置
公开(公告)号：US06187110B1
公开(公告)日：2001-02-13
申请号：US09316739
申请日：1999-05-21
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L2130
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底所选深度以上的材料（12）和所选深度处的图案的颗粒。能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放部分供体基质。

10. 发明授权

US07470600B2 Method and device for controlled cleaving process 有权
标题翻译：控制裂解过程的方法和装置
公开(公告)号：US07470600B2
公开(公告)日：2008-12-30
申请号：US11842104
申请日：2007-08-20
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/67092 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/187 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体来自供体衬底的剩余部分的材料。

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