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1. 发明授权

US08999851B2 Methods for formation of substrate elements 有权
标题翻译：形成基质元素的方法
公开(公告)号：US08999851B2
公开(公告)日：2015-04-07
申请号：US12331150
申请日：2008-12-09
申请人： Francisco Leon , Francesco Lemmi , Jeffrey Miller , David Dutton , David P. Stumbo
发明人： Francisco Leon , Francesco Lemmi , Jeffrey Miller , David Dutton , David P. Stumbo
IPC分类号： H01L21/302 , H01L29/06 , B81C1/00 , B82Y10/00 , H01L29/66 , H01L29/786
CPC分类号： H01L29/0665 , B81C1/00142 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/42392 , H01L29/66439 , H01L29/66772 , H01L29/775 , H01L29/78603 , H01L29/78696
摘要： The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.
摘要翻译：本发明涉及形成衬底元件的方法，包括诸如纳米线，晶体管和其它结构的半导体元件，以及由这些方法形成的元件。

2. 发明授权

US07745498B2 Nanowire dispersion compositions and uses thereof 有权
标题翻译：纳米线分散组合物及其用途
公开(公告)号：US07745498B2
公开(公告)日：2010-06-29
申请号：US11399307
申请日：2006-04-06
申请人： Cheri X. Y. Pereira , Francesco Lemmi , David P. Stumbo
发明人： Cheri X. Y. Pereira , Francesco Lemmi , David P. Stumbo
IPC分类号： B01F3/12
CPC分类号： C30B33/005 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/48 , C30B29/602 , H01L31/022466 , Y10T428/24372 , Y10T428/24405 , Y10T428/249921
摘要： Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.
摘要翻译：公开了纳米线分散体组合物（及其用途），其包含悬浮在包含至少一种低分子量和/或低HLB（亲水亲油平衡值）分散剂的水性或非水溶液中的多种无机纳米线。在水性或非水溶液中分散纳米线之前，进一步提高多种无机纳米线在水溶液或非水溶液中的分散性的方法包括例如氧化纳米线的表面。

3. 发明授权

US07339184B2 Systems and methods for harvesting and integrating nanowires 有权
标题翻译：用于收获和整合纳米线的系统和方法
公开(公告)号：US07339184B2
公开(公告)日：2008-03-04
申请号：US11117707
申请日：2005-04-29
申请人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
发明人： Linda T. Romano , Jian Chen , Xiangfeng Duan , Robert S. Dubrow , Stephen A. Empedocles , Jay L. Goldman , James M. Hamilton , David L. Heald , Francesco Lemmi , Chunming Niu , Yaoling Pan , George Pontis , Vijendra Sahi , Erik C. Scher , David P. Stumbo , Jeffery A. Whiteford
IPC分类号： H01L29/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译：本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。提供了收获和集成纳米线的其他方法。

4. 发明申请

US20100237288A1 Nanowire Dispersion Compositions and Uses Thereof 审中-公开
标题翻译：纳米线分散体组合物及其用途
公开(公告)号：US20100237288A1
公开(公告)日：2010-09-23
申请号：US12780572
申请日：2010-05-14
申请人： Cheri X.Y. Pereira , Francesco Lemmi , David P. Stumbo
发明人： Cheri X.Y. Pereira , Francesco Lemmi , David P. Stumbo
IPC分类号： C09K3/00
CPC分类号： C30B33/005 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/48 , C30B29/602 , H01L31/022466 , Y10T428/24372 , Y10T428/24405 , Y10T428/249921
摘要： Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.
摘要翻译：公开了纳米线分散体组合物（及其用途），其包含悬浮在包含至少一种低分子量和/或低HLB（亲水亲油平衡值）分散剂的水性或非水溶液中的多种无机纳米线。在水性或非水溶液中分散纳米线之前，进一步提高多种无机纳米线在水溶液或非水溶液中的分散性的方法包括例如氧化纳米线的表面。

5. 发明授权

US07767102B2 Systems and methods for harvesting and integrating nanowires 有权
标题翻译：用于收获和整合纳米线的系统和方法
公开(公告)号：US07767102B2
公开(公告)日：2010-08-03
申请号：US11839778
申请日：2007-08-16
申请人： Francesco Lemmi , David P. Stumbo
发明人： Francesco Lemmi , David P. Stumbo
IPC分类号： H01B13/00
CPC分类号： C30B29/605 , B82Y10/00 , C30B11/12 , H01L21/02439 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/78684 , H01L29/7869 , H01L29/78696 , H01L51/0048 , Y10S977/762 , Y10S977/938 , Y10T428/139 , Y10T428/2902 , Y10T428/2949
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译：本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。本发明还提供了将纳米线整合到电子器件中的方法，其包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。提供了收获和集成纳米线的其他方法。

6. 发明授权

US07741197B1 Systems and methods for harvesting and reducing contamination in nanowires 有权
标题翻译：用于收获和减少纳米线污染的系统和方法
公开(公告)号：US07741197B1
公开(公告)日：2010-06-22
申请号：US11643025
申请日：2006-12-20
申请人： Xiangfeng Duan , Paul Bernatis , Alice Fischer-Colbrie , James M. Hamilton , Francesco Lemmi , Yaoling Pan , J. Wallace Parce , Cheri X. Y. Pereira , David P. Stumbo
发明人： Xiangfeng Duan , Paul Bernatis , Alice Fischer-Colbrie , James M. Hamilton , Francesco Lemmi , Yaoling Pan , J. Wallace Parce , Cheri X. Y. Pereira , David P. Stumbo
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , B82Y30/00 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/02628 , Y10S977/70 , Y10S977/742
摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.
摘要翻译：本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。本发明还提供了将纳米线整合到电子器件中的方法，其包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。提供了收获和集成纳米线的其他方法。

7. 发明申请

US20080305619A1 METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
标题翻译：使用激光加工形成IV族半导体结的方法
公开(公告)号：US20080305619A1
公开(公告)日：2008-12-11
申请号：US12114141
申请日：2008-05-02
申请人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
发明人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L31/182 , H01L21/0237 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02675 , H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/077 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
摘要翻译：公开了一种在衬底上形成IV族半导体结的方法。该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

8. 发明申请

US20080138966A1 METHOD OF FABRICATING A DENSIFIED NANOPARTICLE THIN FILM WITH A SET OF OCCLUDED PORES 审中-公开
标题翻译：用一组封闭的聚四氟乙烯薄膜制造方法
公开(公告)号：US20080138966A1
公开(公告)日：2008-06-12
申请号：US11940056
申请日：2007-11-14
申请人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
发明人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
IPC分类号： H01L21/208
CPC分类号： H01L31/1804 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02664 , H01L31/06 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a densified nanoparticle thin film with a set of occluded pores in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method further includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 5 minutes and about 60 minutes, wherein the solvent is substantially removed, and a porous compact with a set of pores is formed. The method also includes heating the porous compact to a second temperature between about 300° C. and about 900° C., and for a second time period of between about 5 minutes and about 15 minutes, and flowing a precursor gas into the chamber at a partial pressure between about 0.1 Torr and about 50 Torr, wherein the precursor gas substantially fills the set of pores, and wherein the densified nanoparticle film with the set of occluded pores is formed.
摘要翻译：公开了一种在腔室中制造具有一组闭塞孔的致密纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约5分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成一组细孔。该方法还包括将多孔压块加热至约300℃至约900℃之间的第二温度和约5分钟至约15分钟的第二时间段，并将前体气体流入室中在约0.1托和约50托之间的分压，其中前体气体基本上填充该组孔，并且其中形成具有该组闭塞孔的致密纳米颗粒膜。

9. 发明申请

US20080063855A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20080063855A1
公开(公告)日：2008-03-13
申请号：US11851004
申请日：2007-09-06
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B3/26 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

10. 发明授权

US07338833B2 Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays 有权
标题翻译：用于抑制高填充因子阵列中的横向漏电流的双电介质结构
公开(公告)号：US07338833B2
公开(公告)日：2008-03-04
申请号：US10067424
申请日：2002-02-07
申请人： Jeng Ping Lu , Ping Mei , Francesco Lemmi , Robert A. Street , James B. Boyce
发明人： Jeng Ping Lu , Ping Mei , Francesco Lemmi , Robert A. Street , James B. Boyce
IPC分类号： H01L21/00
CPC分类号： H01L27/14665 , H01L27/1463
摘要： A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.
摘要翻译：用于抑制全填充因子图像阵列中的横向漏电流的结构和方法包括双电介质钝化层。第一钝化层包括作为绝缘体的材料，具有低介电常数以最小化触点之间的电容耦合，并且是低应力以防止开裂。第二钝化层包括在第一钝化层上的薄氧化物或氮化物层。

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