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1. 发明申请

US20110079768A1 PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM 审中-公开
标题翻译：包含大容量和量子半导体结构的光学材料和其中的光电器件
公开(公告)号：US20110079768A1
公开(公告)日：2011-04-07
申请号：US12965015
申请日：2010-12-10
申请人： Dmytro Poplavskyy , Sanjai Sinha , David Jurbergs , Homer Antoniadis
发明人： Dmytro Poplavskyy , Sanjai Sinha , David Jurbergs , Homer Antoniadis
IPC分类号： H01L29/66 , C09K11/08
CPC分类号： H01L31/0352 , H01L31/028 , Y02E10/547
摘要： The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.
摘要翻译：本发明提供光活性材料，其包括与非量子限制和体半导体结构组合的量子限制半导体纳米结构，以增强或创建II型带偏移结构。光活性材料非常适合用作光活性器件中的光活性层，包括光电器件，光电导体和光电探测器。

2. 发明申请

US20080220175A1 NANOPARTICLES WTIH GRAFTED ORGANIC MOLECULES 审中-公开
标题翻译：纳米粒子有机有机分子
公开(公告)号：US20080220175A1
公开(公告)日：2008-09-11
申请号：US12017644
申请日：2008-01-22
申请人： Lorenzo Mangolini , Uwe Kortshagen , Rebecca J. Anthony , David Jurbergs , Xuegeng Li , Elena Rogojina
发明人： Lorenzo Mangolini , Uwe Kortshagen , Rebecca J. Anthony , David Jurbergs , Xuegeng Li , Elena Rogojina
IPC分类号： C23C16/00 , B05D1/18
CPC分类号： B01J19/088 , B01J2219/0809 , B01J2219/0835 , B01J2219/0847 , B01J2219/0849 , B01J2219/0869 , B01J2219/0875 , B01J2219/0886 , B01J2219/0896 , C01B33/02 , Y10S977/773
摘要： An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.
摘要翻译：提供了用于生产接枝的IV族纳米颗粒的设备，并且包括IV族纳米颗粒的来源。腔室被配置为携带气相中的纳米颗粒并且具有入口和出口。所述入口被配置为耦合到有机分子源，所述有机分子源被配置为向所述室提供有机分子。排列等离子体源以产生等离子体。等离子体导致有机分子在室中分解和/或活化并结合到纳米颗粒。还提供了生产接枝的IV族纳米颗粒的方法，包括在气相中接收IV族纳米颗粒，与纳米颗粒一起产生等离子体，并允许有机分子在等离子体中分解和/或激活并与纳米颗粒结合。

3. 发明授权

US08945673B2 Nanoparticles with grafted organic molecules 有权
标题翻译：具有接枝有机分子的纳米颗粒
公开(公告)号：US08945673B2
公开(公告)日：2015-02-03
申请号：US13331168
申请日：2011-12-20
申请人： Lorenzo Mangolini , Uwe Kortshagen , Rebecca J. Anthony , David Jurbergs , Xuegeng Li , Elena Rogojina
发明人： Lorenzo Mangolini , Uwe Kortshagen , Rebecca J. Anthony , David Jurbergs , Xuegeng Li , Elena Rogojina
IPC分类号： B82Y40/00 , C23C16/00 , B01J19/08 , C01B33/02
CPC分类号： B01J19/088 , B01J2219/0809 , B01J2219/0835 , B01J2219/0847 , B01J2219/0849 , B01J2219/0869 , B01J2219/0875 , B01J2219/0886 , B01J2219/0896 , C01B33/02 , Y10S977/773
摘要： An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.
摘要翻译：提供了用于生产接枝的IV族纳米颗粒的设备，并且包括IV族纳米颗粒的来源。腔室被配置为携带气相中的纳米颗粒并且具有入口和出口。所述入口被配置为耦合到有机分子源，所述有机分子源被配置为向所述室提供有机分子。排列等离子体源以产生等离子体。等离子体导致有机分子在室中分解和/或活化并结合到纳米颗粒。还提供了生产接枝的IV族纳米颗粒的方法，包括在气相中接收IV族纳米颗粒，与纳米颗粒一起产生等离子体，并允许有机分子在等离子体中分解和/或激活并与纳米颗粒结合。

4. 发明申请

US20110091731A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20110091731A1
公开(公告)日：2011-04-21
申请号：US12967378
申请日：2010-12-14
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B15/04 , H01B1/04 , H01B1/02 , B32B17/06 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

5. 发明申请

US20090056628A1 PROCESS AND APPARATUS FOR FORMING NANOPARTICLES USING RADIOFREQUENCY PLASMAS 有权
标题翻译：使用放射性等离子体制备纳米颗粒的方法和装置
公开(公告)号：US20090056628A1
公开(公告)日：2009-03-05
申请号：US12263616
申请日：2008-11-03
申请人： Uwe Kortshagen , Elijah J. Thimsen , Lorenzo Mangolini , Ameya Bapat , David Jurbergs
发明人： Uwe Kortshagen , Elijah J. Thimsen , Lorenzo Mangolini , Ameya Bapat , David Jurbergs
IPC分类号： H05H1/46 , C23C16/54
CPC分类号： C30B29/605 , B82Y30/00 , C01B19/007 , C01G1/00 , C01G1/02 , C01P2004/04 , C01P2004/64 , C01P2004/84 , C30B7/005 , C30B25/105 , Y10S977/834 , Y10T117/10 , Y10T117/102 , Y10T117/104 , Y10T117/108
摘要： Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.
摘要翻译：提供了包括单晶半导体纳米颗粒在内的生产纳米颗粒的方法和装置。所述方法包括在含有前体分子的前体气体存在下产生收缩的射频等离子体以形成纳米颗粒的步骤。可以根据这些方法制造直径不大于10nm的单晶半导体纳米颗粒，包括光致发光硅纳米颗粒。

6. 发明授权

US07446335B2 Process and apparatus for forming nanoparticles using radiofrequency plasmas 有权
标题翻译：使用射频等离子体形成纳米颗粒的方法和装置
公开(公告)号：US07446335B2
公开(公告)日：2008-11-04
申请号：US11155340
申请日：2005-06-17
申请人： Uwe Kortshagen , Elijah J. Thimsen , Lorenzo Mangolini , Ameya Bapat , David Jurbergs
发明人： Uwe Kortshagen , Elijah J. Thimsen , Lorenzo Mangolini , Ameya Bapat , David Jurbergs
IPC分类号： H01L29/04
CPC分类号： C30B29/605 , B82Y30/00 , C01B19/007 , C01G1/00 , C01G1/02 , C01P2004/04 , C01P2004/64 , C01P2004/84 , C30B7/005 , C30B25/105 , Y10S977/834 , Y10T117/10 , Y10T117/102 , Y10T117/104 , Y10T117/108
摘要： Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.
摘要翻译：提供了包括单晶半导体纳米颗粒在内的生产纳米颗粒的方法和装置。所述方法包括在含有前体分子的前体气体存在下产生收缩的射频等离子体以形成纳米颗粒的步骤。可以根据这些方法制造直径不大于10nm的单晶半导体纳米颗粒，包括光致发光硅纳米颗粒。

7. 发明申请

US20080191193A1 IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS 审中-公开
标题翻译：使用气相纳米材料反应器的第四组纳米粒子的现场改性
公开(公告)号：US20080191193A1
公开(公告)日：2008-08-14
申请号：US11967568
申请日：2007-12-31
申请人： Xuegeng Li , Elena Rogojina , David Jurbergs , Damian Aherne
发明人： Xuegeng Li , Elena Rogojina , David Jurbergs , Damian Aherne
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： B22F1/0018 , B01J19/121 , B01J2219/0883 , B22F9/28 , B22F2999/00 , B82Y30/00 , C01B33/027 , C01P2002/82 , C01P2004/10 , C01P2004/16 , C01P2004/32 , C01P2004/64 , B22F2202/11 , B22F1/0062
摘要： A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.
摘要翻译：公开了一种用于产生有机封端的IV族半导体纳米颗粒的方法。该方法包括将IV族半导体前体气体流入室中。该方法还包括用激光热解装置从第IV族半导体前体气体生成一组IV族半导体前体基团物质，其中该组IV族半导体前体自由基团成核形成第IV族半导体纳米颗粒; 并将有机封端剂前体气体流入室中。该方法还包括从有机封端剂前体气体产生一组有机封端剂自由基物质，其中该组有机封端剂自由基物质与第IV族半导体纳米颗粒的表面反应并形成有机封端的第IV族半导体纳米颗粒。

8. 发明申请

US20080078441A1 SEMICONDUCTOR DEVICES AND METHODS FROM GROUP IV NANOPARTICLE MATERIALS 审中-公开
标题翻译：第四族纳米材料的半导体器件和方法
公开(公告)号：US20080078441A1
公开(公告)日：2008-04-03
申请号：US11857854
申请日：2007-09-19
申请人： Dmitry Poplavskyy , Homer Antoniadis , David Jurbergs , Maxim Kelman , Francesco Lemmi , Pingrong Yu
发明人： Dmitry Poplavskyy , Homer Antoniadis , David Jurbergs , Maxim Kelman , Francesco Lemmi , Pingrong Yu
IPC分类号： H01L31/00 , H01L21/02
CPC分类号： H01L31/076 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该装置包括基板; 形成在基板上方的绝缘层; 以及形成在所述绝缘层之上的第一电极。该器件还包括沉积在第一电极上的第一掺杂的IV族纳米颗粒薄膜; 以及沉积在第一掺杂的IV族纳米颗粒薄膜上的第二掺杂的IV族纳米颗粒薄膜。该器件还包括沉积在第二掺杂的IV族纳米颗粒薄膜上的第三掺杂的IV族纳米颗粒薄膜; 沉积在第三掺杂的IV族纳米颗粒薄膜上的第四掺杂的IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。其中当向第四掺杂的IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

9. 发明授权

US07521340B2 Methods for creating a densified group IV semiconductor nanoparticle thin film 失效
标题翻译：用于形成致密化的IV族半导体纳米颗粒薄膜的方法
公开(公告)号：US07521340B2
公开(公告)日：2009-04-21
申请号：US11950024
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/20
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

10. 发明申请

US20090026421A1 OPTIMIZED LASER PYROLYSIS REACTOR AND METHODS THEREFOR 审中-公开
标题翻译：优化激光热解反应器及其方法
公开(公告)号：US20090026421A1
公开(公告)日：2009-01-29
申请号：US12054133
申请日：2008-03-24
申请人： Xuegeng Li , David Jurbergs
发明人： Xuegeng Li , David Jurbergs
IPC分类号： H01B1/04 , C23C16/02 , H01L21/205
CPC分类号： C01B33/027 , B22F1/0018 , B22F9/30 , B82Y20/00 , B82Y30/00 , C01P2004/64 , H01L21/02532 , H01L21/02601 , H01L21/02628
摘要： An apparatus for making a set of Group IV nanoparticles is disclosed. The apparatus includes a top plate, the top plate further including an outlet port; a bottom plate; and a casing extending between the top plate and the bottom plate. The apparatus also includes a particle collector assembly configured to be in fluid communication with the outlet port; and a primary precursor tubing assembly passing through the bottom plate into the casing, the primary precursor tubing assembly including a primary precursor tubing assembly nozzle. The apparatus further includes a set of secondary precursor tubing assemblies passing through the bottom plate into the casing, wherein each secondary precursor tubing assembly of the set of secondary precursor tubing assemblies further includes a set of secondary precursor tubing assembly nozzles positioned orthogonally to the primary precursor tubing assembly nozzle, the set of secondary precursor tubing assembly nozzles further configured to be adjusted to a first height above primary precursor tubing assembly nozzle. The apparatus also includes a laser configured to generate a laser beam, the laser beam being substantially perpendicular to the primary precursor tubing assembly nozzle in the reaction zone, wherein the laser may be adjusted to a second height above primary precursor tubing assembly nozzle.
摘要翻译：公开了用于制备一组IV族纳米颗粒的装置。该装置包括顶板，顶板还包括出口; 底板; 以及在顶板和底板之间延伸的壳体。该装置还包括构造成与出口流体连通的颗粒收集器组件; 以及通过底板进入壳体的初级前体管组件，所述主前体管组件包括初级前体管组件喷嘴。该装置还包括一组次级前体管组件，其穿过底板进入壳体，其中该组次级前体管组件的每个次级前体管组件还包括与初级前体正交定位的一组次级前体管组件喷嘴管组件喷嘴，所述一组二次前体管组件喷嘴进一步构造成被调节到初级前体管组件喷嘴上方的第一高度。该设备还包括被配置为产生激光束的激光器，激光束基本上垂直于反应区域中的初级前体管道组件喷嘴，其中激光器可以被调节到初级前体管道组件喷嘴之上的第二高度。

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