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1. 发明授权

US06869487B1 Process and apparatus for treating a workpiece such as a semiconductor wafer 有权
标题翻译：用于处理诸如半导体晶片的工件的工艺和设备
公开(公告)号：US06869487B1
公开(公告)日：2005-03-22
申请号：US09621028
申请日：2000-07-21
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： B08B3/00 , B08B3/02 , B08B3/04 , B08B3/08 , B08B7/00 , H01L21/00 , H01L21/02 , H01L21/306 , H01L21/3065 , H01L23/495 , H05K3/34 , B08B3/10
CPC分类号： H01L21/02054 , B08B3/00 , B08B3/02 , B08B3/044 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2203/007 , B08B2230/01 , H01L21/02052 , H01L21/3065 , H01L21/6704 , H01L21/67051 , H01L23/49582 , H01L2924/0002 , H05K3/3426 , Y02P70/613 , Y10S134/902 , H01L2924/00
摘要： A novel chemistry, system and application technique reduces contamination of semiconductor wafers and similar substrates and enhances and expedites processing. A stream of liquid chemical is applied to the workpiece surface. Ozone is delivered either into the liquid process stream or into the process environment. The ozone is preferably generated by a high capacity ozone generator. The chemical stream is provided in the form of a liquid or vapor. A boundary layer liquid or vapor forms on the workpiece surface. The thickness of the boundary layer is controlled. The chemical stream may include ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning steps.
摘要翻译：一种新颖的化学，系统和应用技术可减少半导体晶片和类似基板的污染，并增强和加速处理。液体化学品流被施加到工件表面。臭氧被输送到液体工艺流或进入工艺环境。臭氧优选由高容量臭氧发生器产生。化学物流以液体或蒸汽的形式提供。在工件表面上形成边界层液体或蒸气。控制边界层的厚度。化学物流可以包括用于同时进行颗粒和有机物去除的氢氧化铵，用于提高溶液的pH的另一种化学品，或者设计成用于实现一个或多个特定清洁步骤的其它化学添加剂。

2. 发明授权

US06745494B2 Method and apparatus for processing wafers under pressure 失效
标题翻译：用于在压力下处理晶片的方法和装置
公开(公告)号：US06745494B2
公开(公告)日：2004-06-08
申请号：US10334457
申请日：2002-12-30
申请人： Eric J. Bergman , Ian Sharp , Craig P. Meuchel , H. Frederick Woods
发明人： Eric J. Bergman , Ian Sharp , Craig P. Meuchel , H. Frederick Woods
IPC分类号： F26B504
CPC分类号： H01L21/67034 , H01L21/67028 , H01L21/67057 , H01L21/67772 , H01L21/67775
摘要： A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.
摘要翻译：用于半导体晶片的高压干燥的系统包括将晶片插入开放容器中，将晶片浸入液体中，对容器进行加压密封，用惰性气体加压容器，然后控制使用从保持在气 - 液界面正下方的深度提取水的可移动排水来排出液体。此后，可以在容器中降低压力，并且可以除去干燥和干净的晶片。高压抑制液体的沸点，从而允许使用较高的温度来优化反应性。超声波与加压流体一起使用，以提高清洁性能。超临界物质设置在含有晶片的密封容器中以促进清洁和其它处理。

3. 发明授权

US06543156B2 Method and apparatus for high-pressure wafer processing and drying 失效
公开(公告)号：US06543156B2
公开(公告)日：2003-04-08
申请号：US10101045
申请日：2002-03-18
申请人： Eric J. Bergman , Ian Sharp , Craig P. Meuchel , H. Frederick Woods
发明人： Eric J. Bergman , Ian Sharp , Craig P. Meuchel , H. Frederick Woods
IPC分类号： F26B504
CPC分类号： H01L21/67034 , H01L21/67028 , H01L21/67057 , H01L21/67772 , H01L21/67775
摘要： A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

4. 发明授权

US06240933B1 Methods for cleaning semiconductor surfaces 失效
公开(公告)号：US06240933B1
公开(公告)日：2001-06-05
申请号：US08853649
申请日：1997-05-09
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： H01L21302
CPC分类号： H01L21/02054 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2230/01 , Y10S134/902 , Y10S438/906
摘要： The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

5. 发明授权

US06192600B1 Thermocapillary dryer 失效
标题翻译：热毛细干燥器
公开(公告)号：US06192600B1
公开(公告)日：2001-02-27
申请号：US09392966
申请日：1999-09-09
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： F26B334
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A process and apparatus for drying semiconductor wafers includes the controlled-rate extraction of a wafer immersed in rinsing liquid, irradiation of the wafer using high intensity lights or filaments along the wafer-liquid interface, and delivery of gas streams against the wafer along the wafer-liquid interface using a gas delivery system. Heating is controlled to create a temperature gradient without evaporating rinsing fluid adhering to surfaces of the wafer. Heating by the radiation sources creates a temperature gradient in the wafer in the irradiated region that simultaneously generates a surface tension gradient in the water adhering to the wafer. The gas delivery system removes the bulk of the water adhering to the wafer surface, and also suppresses the height of the rinsing liquid adhering to the wafer, providing faster extraction of dry and highly clean wafers from the rinsing liquid. A solvent vapor is optionally injected at the wafer-liquid interface, to reduce adhesion of the liquid to the vapor.
摘要翻译：用于干燥半导体晶片的工艺和设备包括浸入冲洗液中的晶片的受控速率提取，沿着晶片 - 液界面的高强度光或细丝照射晶片，以及沿着晶片向晶片的输送 - 使用气体输送系统的液体界面。控制加热以产生温度梯度，而不会蒸发粘附到晶片表面的冲洗流体。通过辐射源的加热在照射区域中的晶片中产生温度梯度，同时在附着于晶片的水中产生表面张力梯度。气体输送系统除去附着在晶片表面上的大部分水，并且还抑制了附着在晶片上的冲洗液体的高度，从冲洗液体中更快地提取干燥且高度干净的晶片。任选地在晶片 - 液体界面处注入溶剂蒸气，以减少液体对蒸气的粘附。

6. 发明授权

US5232511A Dynamic semiconductor wafer processing using homogeneous mixed acid vapors 失效
标题翻译：使用均质混合酸蒸汽的动态半导体波长处理
公开(公告)号：US5232511A
公开(公告)日：1993-08-03
申请号：US665945
申请日：1991-03-06
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： G11B7/26 , H01L21/00
CPC分类号： H01L21/67075 , H01L21/67023 , G11B7/26
摘要： Disclosed are methods and apparatuses for combined etching and cleaning of semiconductor wafers and the like using a combined etchant and cleaning agent, particularly hydrofluoric acid (HF) and hydrochloric acid in water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are preferably recirculated, mixed and agitated. The liquid phase is advantageously circulated through a chemical chamber within the processing bowl. Exposure of wafers to vapors from the chemical chamber can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The processes provide efficient uniform etching and cleaning to provide low particle count performance.
摘要翻译：公开了使用组合的蚀刻剂和清洁剂，特别是氢氟酸（HF）和盐酸在水混合物中组合蚀刻和清洁半导体晶片等的方法和装置。均匀的蒸汽混合物是从均匀的液相混合物产生的，其优选是循环的，混合的和搅拌的。液相有利地循环通过加工碗内的化学室。晶片从化学室暴露于蒸气可以通过有利地处理室底部的蒸汽控制阀来控制。晶片在处理室内旋转或以其它方式移动，以提供均匀反应物蒸汽在晶片表面上的均匀分散，并促进蒸气循环到经处理的表面。辐射挥发处理器可用于挥发在一些条件下形成的反应副产物。这些工艺提供了有效的均匀蚀刻和清洁，以提供低的粒子计数性能。

7. 发明授权

US08028978B2 Wafer handling system 失效
标题翻译：晶圆处理系统
公开(公告)号：US08028978B2
公开(公告)日：2011-10-04
申请号：US10397946
申请日：2003-03-25
申请人： Gordon R. Nelson , Jeffry A. Davis , Raymon F. Thompson , Eric J. Bergman
发明人： Gordon R. Nelson , Jeffry A. Davis , Raymon F. Thompson , Eric J. Bergman
IPC分类号： B23P19/00
CPC分类号： H01L21/67754 , H01L21/67769 , H01L21/67772 , H01L21/67775 , H01L21/67778 , H01L21/67781 , H01L21/68707 , Y10S269/903
摘要： A semiconductor wafer processing system has a carrier including wafer slots. A process robot engages the carrier and installs the carrier into a rotor within a process chamber. The rotor has a tapered or stepped inside surface matching a tapered or stepped outside surface of the carrier. Wafer retainers on the carrier pivot to better secure wafers within the carrier.
摘要翻译：半导体晶片处理系统具有包括晶片槽的载体。过程机器人接合载体并将载体安装在处理室内的转子中。转子具有与载体的锥形或阶梯状外表面匹配的锥形或阶梯状内表面。载体上的晶片固定器枢转以更好地将晶片保护在载体内。

8. 发明申请

US20110217848A1 PHOTORESIST REMOVING PROCESSOR AND METHODS 审中-公开
标题翻译：光刻胶去除处理器和方法
公开(公告)号：US20110217848A1
公开(公告)日：2011-09-08
申请号：US12717079
申请日：2010-03-03
申请人： Eric J. Bergman , Jerry Dustin Leonhard , Bryan Puch , Jason Rye
发明人： Eric J. Bergman , Jerry Dustin Leonhard , Bryan Puch , Jason Rye
IPC分类号： H01L21/306
CPC分类号： H01L21/31133 , G03F7/42 , G03F7/423 , H01L21/67115 , H01L21/6719
摘要： A processing chamber successfully removes hardened photoresist via direct infrared radiation onto the wafer, in the presence of an acid such as sulfuric acid, optionally along with an oxidizer such as hydrogen peroxide. The processing chamber includes a fixture for holding and optionally rotating the wafer. An infrared irradiating assembly has infrared lamps outside of the processing chamber positioned to radiate infrared light into the processing chamber. The infrared lamps may be arranged to irradiate substantially the entire surface of a wafer on the rotor. A cooling assembly can be associated with the infrared radiating assembly to provide a quick cool down and avoid over-processing. Photoresist is removed using small amounts of chemical solutions.
摘要翻译：处理室在酸例如硫酸存在下，任选地与氧化剂如过氧化氢成功地将硬化的光致抗蚀剂通过直接红外辐射除去到晶片上。处理室包括用于保持和任选地旋转晶片的固定装置。红外辐射组件具有位于处理室外面的红外灯，其被定位成将红外光辐射到处理室中。红外灯可以被布置成基本上照射转子上的晶片的整个表面。冷却组件可以与红外辐射组件相关联以提供快速冷却并避免过度处理。使用少量化学溶液除去光刻胶。

9. 发明授权

US07264680B2 Process and apparatus for treating a workpiece using ozone 失效
标题翻译：使用臭氧处理工件的工艺和设备
公开(公告)号：US07264680B2
公开(公告)日：2007-09-04
申请号：US10859668
申请日：2004-06-03
申请人： Thomas Maximilia Gebhart , Eric J. Bergman
发明人： Thomas Maximilia Gebhart , Eric J. Bergman
IPC分类号： B08B5/00
CPC分类号： H05K3/3426 , B08B3/00 , B08B3/02 , B08B3/044 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2203/007 , B08B2230/01 , H01L21/02052 , H01L21/02054 , H01L21/3065 , H01L21/6704 , H01L21/67051 , H01L23/49582 , H01L2924/0002 , Y02P70/613 , Y10S438/906 , H01L2924/00
摘要： A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.
摘要翻译：一种在处理室中清洗具有金属层的半导体工件的方法包括以下步骤：将包含溶解的二氧化碳的液体溶液引入到工件上，并将臭氧引入到处理室中。臭氧氧化工件上的污染物，而二氧化碳则抑制金属层的腐蚀。液体溶液优选加热至大于40℃的温度，并且优选包含注入二氧化碳气体的去离子水。在清洁过程中，工件优选地在处理室内旋转。在将液体溶液引入工件之前，臭氧可能被夹带在液体溶液中，或者臭氧可以分开地引入到处理室中。

10. 发明授权

US06817370B2 Method for processing the surface of a workpiece 有权
标题翻译：加工工件表面的方法
公开(公告)号：US06817370B2
公开(公告)日：2004-11-16
申请号：US10420659
申请日：2003-04-21
申请人： Eric J. Bergman , Mignon P. Hess
发明人： Eric J. Bergman , Mignon P. Hess
IPC分类号： B08B310
CPC分类号： H01L21/02054 , B08B3/02 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2230/01 , H01L21/02052 , H01L21/6704 , Y10S134/902
摘要： An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.
摘要翻译：提供了一种用于提供处理液和臭氧的混合物用于处理工件表面的设备以及相应的方法。该装置的优选实施例包括液体供应管线，其用于在容纳处理液体的容器和容纳工件的处理室之间提供流体连通。设置加热器以直接或间接地加热工件。优选地，通过加热供给到工件的处理液来加热工件。一个或多个喷嘴接受来自液体供应管线的处理液并将其喷射到工件的表面上，同时臭氧发生器将臭氧加入到包含工件的环境中。

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