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1. 发明授权

US09999955B2 Polishing apparatus and polished-state monitoring method 有权
公开(公告)号：US09999955B2
公开(公告)日：2018-06-19
申请号：US14327522
申请日：2014-07-09
申请人： EBARA CORPORATION
发明人： Yoichi Kobayashi , Katsuhide Watanabe , Yoichi Shiokawa , Keita Yagi , Masaki Kinoshita
IPC分类号： B24B37/013 , G01B11/06
CPC分类号： B24B37/013 , G01B11/0625 , G01B11/0683 , G01B11/0691
摘要： A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.

2. 发明授权

US08585460B2 Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method and apparatus for selecting wavelength of light for polishing endpoint detection, polishing endpoint detection method, polishing endpoint detection apparatus, and polishing monitoring method 有权
标题翻译：用于选择用于抛光终点检测的光的波长的图的制作方法，用于选择用于抛光终点检测的光的波长的选择方法和装置，抛光终点检测方法，抛光终点检测装置和抛光监测方法
公开(公告)号：US08585460B2
公开(公告)日：2013-11-19
申请号：US13712014
申请日：2012-12-12
申请人： Ebara Corporation
发明人： Yoichi Kobayashi , Shinrou Ohta , Toshifumi Kimba , Masaki Kinoshita
IPC分类号： B24B49/00 , B24B51/00
CPC分类号： B24B49/12 , B24B37/013
摘要： A method of polishing end point detection includes polishing a surface of a substrate; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; measuring reflection intensities of the reflected light at respective wavelengths; creating a spectral profile indicating a relationship between reflection intensity and wavelength from the reflection intensities measured; extracting at least one extremal point indicating extremum of the reflection intensities from the spectral profile; during polishing of the substrate, repeating the creating of the spectral profile and the extracting of the at least one extremal point to obtain plural spectral profiles and plural extremal points; and detecting the polishing end point based on an amount of relative change in the extremal point between the plural spectral profiles.
摘要翻译：抛光终点检测的方法包括抛光基底的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 测量各波长的反射光的反射强度; 从测量的反射强度产生指示反射强度和波长之间的关系的光谱分布; 从光谱轮廓提取表示反射强度的极值的至少一个极值点; 在衬底的抛光期间，重复产生光谱轮廓和提取至少一个极值点以获得多个光谱曲线和多个极值点; 并且基于多个光谱轮廓之间的极值点的相对变化量来检测抛光终点。

3. 发明授权

US10056277B2 Polishing method 有权
公开(公告)号：US10056277B2
公开(公告)日：2018-08-21
申请号：US15357706
申请日：2016-11-21
申请人： EBARA CORPORATION
发明人： Yoichi Kobayashi , Yoichi Shiokawa , Katsuhide Watanabe
IPC分类号： B24B37/00 , H01L21/67 , H01L21/3105 , H01L21/66 , B24B37/013 , B24B37/10 , B24B37/20 , B24B37/32 , B24B49/10 , B24B49/12
CPC分类号： H01L21/67253 , B24B37/013 , B24B37/105 , B24B37/205 , B24B37/32 , B24B49/105 , B24B49/12 , H01L21/31053 , H01L21/67092 , H01L22/12 , H01L22/26
摘要： A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.

4. 发明授权

US11667007B2 Polishing apparatus and polishing method 有权
公开(公告)号：US11667007B2
公开(公告)日：2023-06-06
申请号：US16162914
申请日：2018-10-17
申请人： EBARA CORPORATION
发明人： Mitsunori Sugiyama , Taro Takahashi , Yoichi Kobayashi
IPC分类号： B24B37/013 , B24B37/12 , B24B49/12 , B24B57/02 , B24B49/08 , B24B37/10 , B24B37/20 , B24B27/00 , H01L21/306
CPC分类号： B24B37/013 , B24B27/0023 , B24B37/105 , B24B37/12 , B24B37/205 , B24B49/08 , B24B49/12 , B24B57/02 , H01L21/30625
摘要： A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.

5. 发明授权

US09969048B2 Polishing apparatus 有权
公开(公告)号：US09969048B2
公开(公告)日：2018-05-15
申请号：US14808252
申请日：2015-07-24
申请人： EBARA CORPORATION
发明人： Itsuki Kobata , Yoichi Kobayashi , Katsutoshi Ono , Masaki Kinoshita , Toshifumi Kimba
IPC分类号： B24B49/12 , B24B37/013 , B24B37/10 , B24B37/26 , H01L21/67 , H01L21/687 , B24B37/04 , B24B37/005 , H01L21/3105 , H01L21/66
CPC分类号： B24B37/26 , B24B37/005 , B24B37/013 , B24B37/04 , B24B37/042 , B24B37/10 , B24B49/12 , H01L21/31053 , H01L21/67075 , H01L21/67092 , H01L21/67253 , H01L21/68721 , H01L22/26
摘要： A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

6. 发明授权

US09440327B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US09440327B2
公开(公告)日：2016-09-13
申请号：US13859496
申请日：2013-04-09
申请人： Ebara Corporation
发明人： Yasumasa Hiroo , Yoichi Kobayashi , Katsutoshi Ono
IPC分类号： B24B1/00 , B24B49/10 , B24B49/12 , B24B49/16 , B24B37/013
CPC分类号： B24B37/013 , B24B1/002 , B24B49/10 , B24B49/12 , B24B49/16
摘要： The present invention provides an apparatus and a method for polishing a substrate having a film formed thereon. The method includes: rotating a polishing table supporting a polishing pad by a table motor; pressing the substrate against the polishing pad by a top ring; obtaining a signal containing a thickness information of the film; producing from the signal a polishing index value that varies in accordance with a thickness of the film; monitoring a torque current value of the table motor and the polishing index value; and determining a polishing end point based on a point of time when the torque current value has reached a predetermined threshold value or a point of time when a predetermined distinctive point of the polishing index value has appeared, whichever comes first.
摘要翻译：本发明提供一种用于研磨其上形成有膜的基板的装置和方法。该方法包括：通过台式马达旋转支撑抛光垫的抛光台; 通过顶环将衬底压在抛光垫上; 获得包含胶片厚度信息的信号; 从所述信号产生根据所述膜的厚度而变化的抛光指数值; 监测台式电动机的转矩电流值和抛光指标值; 并且基于当转矩电流值已经达到预定阈值的时间点或抛光指标值的预定特征点出现的时间点（以先到者为准），确定抛光终点。

7. 发明授权

US08773670B2 Polishing monitoring method, polishing method, and polishing monitoring apparatus 有权
标题翻译：抛光监测方法，抛光方法和抛光监测装置
公开(公告)号：US08773670B2
公开(公告)日：2014-07-08
申请号：US14049304
申请日：2013-10-09
申请人： Ebara Corporation
发明人： Yoichi Kobayashi
IPC分类号： G01B11/06 , B24B49/00
CPC分类号： G01N21/9501 , B24B37/013 , B24B49/12 , G01B11/06 , H01L21/304
摘要： A method accurately monitors the progress of polishing and accurately detects the polishing end point. The method includes directing light to the substrate during polishing of the substrate, receiving reflected light from the substrate, measuring an intensity of the reflected light at each wavelength, and producing a spectrum indicating a relationship between intensity and wavelength from measured values of the intensity. The method also includes calculating an amount of change in the spectrum per predetermined time, integrating the amount of change in the spectrum with respect to polishing time to obtain an amount of cumulative change in the spectrum, and monitoring the progress of polishing of the substrate based on the amount of cumulative change in the spectrum.
摘要翻译：一种方法精确地监测抛光的进度并精确地检测抛光终点。该方法包括在抛光基板期间将光引向基板，接收来自基板的反射光，测量每个波长处的反射光的强度，并根据强度的测量值产生指示强度和波长之间的关系的光谱。该方法还包括计算每预定时间的光谱变化量，将光谱中的变化量相对于抛光时间进行积分，以获得光谱的累积变化量，并监测基板的抛光进度关于频谱累积变化的数量。

8. 发明授权

US10207390B2 Processing end point detection method, polishing method, and polishing apparatus 有权
公开(公告)号：US10207390B2
公开(公告)日：2019-02-19
申请号：US14017620
申请日：2013-09-04
申请人： EBARA CORPORATION , Toshiba Memory Corporation
发明人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
IPC分类号： B24B49/04 , B24B37/013 , B24D7/12 , G01N21/55 , G05B19/40 , B24B49/12 , G01N21/95 , H01L21/66 , G05B19/406 , B24B49/16 , G01B11/06 , G05B19/4065
摘要： A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

9. 发明授权

US09550269B2 Polishing device and polishing method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：US09550269B2
公开(公告)日：2017-01-24
申请号：US14664691
申请日：2015-03-20
申请人： EBARA CORPORATION
发明人： Yoichi Shiokawa , Keita Yagi , Yoichi Kobayashi
IPC分类号： B24B49/04 , B24B37/005 , H01L21/66 , B24B37/04 , H01L21/321
CPC分类号： B24B37/005 , B24B37/042 , B24B49/04 , H01L21/3212 , H01L22/12 , H01L22/26
摘要： The polishing device includes an edge chamber that presses the surface to be polished against the polishing pad by pressing a back side of the surface to be polished of the wafer, a thickness measuring unit that estimates a remaining film profile of the surface to be polished of the wafer in realtime during polishing, and a closed loop control device that controls a pressing force on the back side of the surface to be polished by the edge chamber in accordance with a measurement result by the thickness measuring unit during polishing. The closed loop control device controls not only the pressing by the edge chamber during polishing, but also the pressure of a retainer ring as a periphery of the edge chamber affecting the pressing of the surface to be polished against the polishing pad.
摘要翻译：抛光装置包括：边缘室，其通过按压晶片的待抛光表面的背面将待抛光表面压靠抛光垫;厚度测量单元，其估计要抛光表面的剩余膜轮廓在抛光期间实时地实现晶片，以及闭环控制装置，其根据研磨期间的厚度测量单元的测量结果来控制由边缘室根据待抛光表面的背侧的按压力。闭环控制装置不仅控制抛光期间边缘室的按压，而且控制作为边缘室的周边的保持环的压力，从而影响待抛光表面对抛光垫的冲压。

10. 发明授权

US10399203B2 Polishing method and polishing apparatus 有权
公开(公告)号：US10399203B2
公开(公告)日：2019-09-03
申请号：US15304829
申请日：2015-04-10
申请人： EBARA CORPORATION
发明人： Yoichi Kobayashi , Keita Yagi , Masaki Kinoshita , Yoichi Shiokawa
IPC分类号： B24B49/05 , B24B49/02 , B24B49/04 , B24B37/013 , B24B37/10 , B24B37/32 , B24B37/34 , H01L21/66 , B24B49/03 , B24B49/12 , H01L21/67
摘要： The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

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