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    • 1. 发明授权
    • Polishing endpoint detection method
    • 抛光端点检测方法
    • US08777694B2
    • 2014-07-15
    • US14036321
    • 2013-09-25
    • Ebara CorporationKabushiki Kaisha Toshiba
    • Shinrou OhtaAtsushi Shigeta
    • B24B1/00B24B49/00B24B51/00
    • B24B37/013B24B37/042
    • Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.
    • 提供了用于基于抛光速率的变化来检测基板的精确抛光终点的方法和装置。 该方法包括:将光施加到衬底的表面并接收来自衬底的反射光; 以预定的时间间隔获得多个光谱轮廓,每个光谱轮廓指示反射光的每个波长处的反射强度; 从所获得的多个光谱分布中选择至少一对光谱分布,包括最新的光谱分布; 计算所选择的光谱轮廓之间的预定波长处的反射强度的差; 从所述差确定反射强度的变化量; 以及基于变化量确定抛光端点。