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1. 发明授权

US07347915B1 Plasma in-situ treatment of chemically amplified resist 有权
标题翻译：化学放大抗蚀剂的等离子体原位处理
公开(公告)号：US07347915B1
公开(公告)日：2008-03-25
申请号：US11326934
申请日：2006-01-05
申请人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01L21/00
CPC分类号： H01L21/0273
摘要： A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.
摘要翻译：提供了通过在晶片上蚀刻层来制造半导体器件的方法。在晶片上设置光致抗蚀剂层。对光致抗蚀剂层进行图案化。将晶片放置在处理室中。通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

2. 发明授权

US07022611B1 Plasma in-situ treatment of chemically amplified resist 有权
标题翻译：化学放大抗蚀剂的等离子体原位处理
公开(公告)号：US07022611B1
公开(公告)日：2006-04-04
申请号：US10426043
申请日：2003-04-28
申请人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01L21/302
CPC分类号： H01L21/0273
摘要： A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.
摘要翻译：提供了通过在晶片上蚀刻层来制造半导体器件的方法。在晶片上设置光致抗蚀剂层。对光致抗蚀剂层进行图案化。将晶片放置在处理室中。通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

3. 发明授权

US07250371B2 Reduction of feature critical dimensions 有权
标题翻译：减少功能关键尺寸
公开(公告)号：US07250371B2
公开(公告)日：2007-07-31
申请号：US10648953
申请日：2003-08-26
申请人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Gan Ming Zhao
发明人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Gan Ming Zhao
IPC分类号： H01L21/311
CPC分类号： H01L21/76802 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76816
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

4. 发明授权

US07541291B2 Reduction of feature critical dimensions 有权
标题翻译：减少功能关键尺寸
公开(公告)号：US07541291B2
公开(公告)日：2009-06-02
申请号：US11821422
申请日：2007-06-22
申请人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Gan Ming Zhao
发明人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Gan Ming Zhao
IPC分类号： H01L21/302
CPC分类号： H01L21/76802 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76816
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

5. 发明授权

US07192531B1 In-situ plug fill 有权
标题翻译：现场插头填充
公开(公告)号：US07192531B1
公开(公告)日：2007-03-20
申请号：US10603412
申请日：2003-06-24
申请人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , Reza Sadjadi
发明人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/31138
摘要： A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.
摘要翻译：提供了一种用于在衬底上的阻挡层上的介电层中形成镶嵌特征的方法。在等离子体处理室中通过等离子体蚀刻工艺将多个通孔在电介质层中蚀刻到阻挡层。形成具有沟槽图案的图案化的光致抗蚀剂层。在单个等离子体处理室内，提供了通过插塞沉积的组合以在阻挡层上的通孔中形成插塞和沟槽蚀刻。

6. 发明申请

US20050048785A1 Reduction of feature critical dimensions 有权
标题翻译：减少功能关键尺寸
公开(公告)号：US20050048785A1
公开(公告)日：2005-03-03
申请号：US10648953
申请日：2003-08-26
申请人： Sean Kang , Sangheon Lee , Wan-Lin Chen , Eric Hudson , S. Sadjadi , Gan Zhao
发明人： Sean Kang , Sangheon Lee , Wan-Lin Chen , Eric Hudson , S. Sadjadi , Gan Zhao
IPC分类号： H01L21/033 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461 , H01L33/00
CPC分类号： H01L21/76802 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76816
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

7. 发明授权

US5734032A Photo-induced DNA-cleaving agents 失效
标题翻译：光诱导的DNA切割剂
公开(公告)号：US5734032A
公开(公告)日：1998-03-31
申请号：US581314
申请日：1995-12-29
申请人： Jih Ru Hwu , Shwu-Chen Tsay , Buh-Luen Chen , Himatkumar V. Patel , Wan-Lin Chen , Chun Chieh Lin , Ching-Tai Chou
发明人： Jih Ru Hwu , Shwu-Chen Tsay , Buh-Luen Chen , Himatkumar V. Patel , Wan-Lin Chen , Chun Chieh Lin , Ching-Tai Chou
IPC分类号： C07H21/00 , C12N15/10 , C12Q1/68 , C01B21/14
CPC分类号： C07H21/00 , C12N15/10 , C12Q1/68
摘要： The present invention discloses a photo-induced DNA-cleaving agent composition comprises N-aryl-N-(alkyl or arylalkyl)hydroxylamine having the following formula: ##STR1## wherein R is C.sub.1 -C.sub.6 alkyl, phenyl, C.sub.1 -C.sub.6 alkoxy, phenoxy, C.sub.1 -C.sub.6 alkoxycarbonyl, halogen or halo(C.sub.1 -C.sub.6 alkyl)wherein R.sub.1 is hydrogen, C.sub.1 -C.sub.6 alkyl, phenyl, C.sub.1 -C.sub.6 alkoxy, C.sub.1 -C.sub.6 alkoxycarbonyl, halogen or halo(C.sub.1 -C.sub.6 alkyl); R.sub.2 is hydrogen; R.sub.3 is hydrogen or phenyl; R.sub.4 is hydrogen, phenyl, hydroxylphenyl, methoxyphenyl, dimethoxyphenyl, dimethylaminophenyl or naphthyl. The present N-aryl-N-(alkyl or arylalkyl)hydroxylamine is stable in dark, but it can react with O.sub.2 to form HO.multidot. radicals under irradiation of UV light for a period of 2-3 hours. The HO.multidot. radicals then react with DNA to accomplish cleavage of DNA.
摘要翻译：本发明公开了一种光致DNA切割剂组合物，其包含具有下式的N-芳基-N-（烷基或芳烷基）羟胺：其中R是C1-C6烷基，苯基，C1-C6 烷氧基，苯氧基，C1-C6烷氧基羰基，卤素或卤素（C1-C6烷基），其中R1是氢，C1-C6烷基，苯基，C1-C6烷氧基，C1-C6烷氧基羰基，卤素或卤素（C1-C6烷基） R2是氢; R3是氢或苯基; R4是氢，苯基，羟基苯基，甲氧基苯基，二甲氧基苯基，二甲基氨基苯基或萘基。本发明的N-芳基-N-（烷基或芳基烷基）羟胺在黑暗中稳定，但在紫外线照射下可与O 2反应形成HOx自由基2-3小时。然后，HOx自由基与DNA反应以完成DNA的切割。

8. 发明申请

US20130280627A1 HYDROGEN-PURIFYING DEVICE 审中-公开
标题翻译：氢气净化装置
公开(公告)号：US20130280627A1
公开(公告)日：2013-10-24
申请号：US13862491
申请日：2013-04-15
申请人： Po-Kuei Chou , Tsai-Hsin Cheng , Din-Sun Ju , Wan-Lin Chen
发明人： Po-Kuei Chou , Tsai-Hsin Cheng , Din-Sun Ju , Wan-Lin Chen
IPC分类号： H01M8/06
CPC分类号： H01M8/0662 , C01B3/56 , C01B2203/02 , C01B2203/042 , C01B2203/0495 , C01B2203/066 , C01B2203/146 , H01M8/0687
摘要： A hydrogen-purifying device is suitable for a fuel cell (FC). The hydrogen-purifying device includes a guiding tank, a first water-absorbing material, a porous filter material and a second water-absorbing material. The guiding tank is connected to a hydrogen-generating device and a fuel cell. The hydrogen-generating device generates hydrogen, moisture mixed with the hydrogen and impurities mixed with the hydrogen. The first water-absorbing material, the porous filter material and the second water-absorbing material are disposed in the guiding tank. The hydrogen passes through the first water-absorbing material to remove a part of the moisture. Then, the hydrogen further passes through the porous filter material to remove the impurity. After that, the hydrogen further passes through the second water-absorbing material to remove another part of the moisture and arrives at the fuel cell.
摘要翻译：氢气净化装置适用于燃料电池（FC）。氢净化装置包括引导槽，第一吸水材料，多孔过滤材料和第二吸水材料。引导箱连接到氢气发生装置和燃料电池。氢产生装置产生氢，与氢混合的水分和与氢混合的杂质。第一吸水材料，多孔过滤材料和第二吸水材料设置在引导槽中。氢气通过第一吸水材料以除去一部分水分。然后，氢气进一步通过多孔过滤材料以除去杂质。此后，氢气进一步通过第二吸水材料以除去另一部分水分并到达燃料电池。

9. 发明授权

US09330926B2 Fabrication of a silicon structure and deep silicon etch with profile control 有权
标题翻译：通过轮廓控制制造硅结构和深度硅蚀刻
公开(公告)号：US09330926B2
公开(公告)日：2016-05-03
申请号：US12338950
申请日：2008-12-18
申请人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
发明人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/02057 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
摘要翻译：提供了将特征蚀刻成具有稳态气流的硅层的方法。提供了包含含氧气体和含氟气体的蚀刻气体。从蚀刻气体提供等离子体。然后，停止蚀刻气体的流动。

10. 发明申请

US20070293050A1 Reduction of feature critical dimensions 有权
公开(公告)号：US20070293050A1
公开(公告)日：2007-12-20
申请号：US11821422
申请日：2007-06-22
申请人： Sean Kang , Sangheon Lee , Wan-Lin Chen , Eric Hudson , S.M. Sadjadi , Gan Zhao
发明人： Sean Kang , Sangheon Lee , Wan-Lin Chen , Eric Hudson , S.M. Sadjadi , Gan Zhao
IPC分类号： H01L21/302 , H01L21/311 , H01L21/461 , H01L33/00
CPC分类号： H01L21/76802 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76816
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

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