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1. 发明授权

US07347915B1 Plasma in-situ treatment of chemically amplified resist 有权
标题翻译：化学放大抗蚀剂的等离子体原位处理
公开(公告)号：US07347915B1
公开(公告)日：2008-03-25
申请号：US11326934
申请日：2006-01-05
申请人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01L21/00
CPC分类号： H01L21/0273
摘要： A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.
摘要翻译：提供了通过在晶片上蚀刻层来制造半导体器件的方法。在晶片上设置光致抗蚀剂层。对光致抗蚀剂层进行图案化。将晶片放置在处理室中。通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

2. 发明授权

US07022611B1 Plasma in-situ treatment of chemically amplified resist 有权
标题翻译：化学放大抗蚀剂的等离子体原位处理
公开(公告)号：US07022611B1
公开(公告)日：2006-04-04
申请号：US10426043
申请日：2003-04-28
申请人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Douglas L. Keil , Wan-Lin Chen , Eric A. Hudson , S. M. Reza Sadjadi , Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01L21/302
CPC分类号： H01L21/0273
摘要： A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.
摘要翻译：提供了通过在晶片上蚀刻层来制造半导体器件的方法。在晶片上设置光致抗蚀剂层。对光致抗蚀剂层进行图案化。将晶片放置在处理室中。通过在处理室中提供含有高能电子的硬化等离子体使光致抗蚀剂硬化，使光致抗蚀剂层硬化，其中高能电子具有密度。该层在处理室内用蚀刻等离子体蚀刻，其中蚀刻等离子体中高能电子的密度小于硬化等离子体中高能电子的密度。

3. 发明申请

US20090113656A1 Apparatus for isolated bevel edge clean and method for using the same 失效
标题翻译：用于隔离斜边边缘清洁的设备及其使用方法
公开(公告)号：US20090113656A1
公开(公告)日：2009-05-07
申请号：US11429574
申请日：2006-05-05
申请人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
发明人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
IPC分类号： A47L5/38 , A47L5/00 , B08B1/04 , B08B1/00
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

4. 发明授权

US08127395B2 Apparatus for isolated bevel edge clean and method for using the same 失效
标题翻译：用于隔离斜边边缘清洁的设备及其使用方法
公开(公告)号：US08127395B2
公开(公告)日：2012-03-06
申请号：US11429574
申请日：2006-05-05
申请人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
发明人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
IPC分类号： B08B7/00
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

5. 发明授权

US06341574B1 Plasma processing systems 有权
标题翻译：等离子体处理系统
公开(公告)号：US06341574B1
公开(公告)日：2002-01-29
申请号：US09439661
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , David J. Hemker , Mark H. Wilcoxson , Andras Kuthi
发明人： Andrew D. Bailey, III , Alan M. Schoepp , David J. Hemker , Mark H. Wilcoxson , Andras Kuthi
IPC分类号： C23C1600
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.
摘要翻译：一种用于处理衬底的等离子体处理系统，其包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。等离子体处理室没有单独的等离子体产生室。等离子体处理室具有上端和下端。等离子体处理系统包括设置在等离子体处理室的上端的耦合窗口和当衬底设置在等离子体处理室内用于处理时设置在由衬底限定的平面上方的RF天线布置。等离子体处理系统还包括设置在由衬底限定的平面之上的电磁体装置。当至少一个直流电被提供给电磁体装置时，电磁体装置构造成导致等离子体处理室内的可耦合窗口和天线附近的区域内的可控磁场的径向变化。径向变化对影响衬底上的加工均匀性是有效的。等离子体处理系统还包括耦合到电磁体装置的直流电源。直流电源具有控制器来改变至少一个直流电流的大小，从而改变等离子体处理室内靠近天线的可控磁场中的径向变化，以改善穿过衬底的加工均匀性。

6. 发明授权

US06873112B2 Method for producing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06873112B2
公开(公告)日：2005-03-29
申请号：US10779187
申请日：2004-02-13
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01J37/32 , H01Q1/36 , H01Q7/00 , H05B31/26
CPC分类号： H01J37/32467 , H01J37/321 , H01Q1/36 , H01Q7/00
摘要： The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.
摘要翻译：本发明提供一种用于处理衬底的方法。将基板放置在室中，其中室包括在室内的基板保持器和形成室的侧面的介电窗口。气体被提供到腔室中。天线用于产生方位角对称电场。使用方位角对称电场从气体形成大致方位对称的等离子体。在衬底的表面上产生基本均匀的加工速率。

7. 发明授权

US06744213B2 Antenna for producing uniform process rates 有权
标题翻译：用于产生均匀加工速率的天线
公开(公告)号：US06744213B2
公开(公告)日：2004-06-01
申请号：US10374868
申请日：2003-02-24
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III
IPC分类号： H01J724
CPC分类号： H01J37/32467 , H01J37/321 , H01Q1/36 , H01Q7/00
摘要： An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.
摘要翻译：一种用于通过窗口在处理室内产生电场的天线装置。通常，天线装置包括外环，包括围绕天线轴设置的第一外环转向，内环，包括围绕天线轴设置的第一内环转，其中内环比天线轴更靠近天线轴外环是在每个方位角方向上的天线轴线，以及径向连接器将外环径向电连接到内环，其中径向连接器与窗口放置很大距离。

8. 发明授权

US06518705B2 Method and apparatus for producing uniform process rates 有权
公开(公告)号：US06518705B2
公开(公告)日：2003-02-11
申请号：US10033807
申请日：2001-12-18
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
IPC分类号： H01J724
CPC分类号： H01J37/321 , H01J37/32467
摘要： An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

9. 发明申请

US20140054269A1 PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM. 有权
标题翻译：在等离子体加工系统中进行等离子体增强蚀刻。
公开(公告)号：US20140054269A1
公开(公告)日：2014-02-27
申请号：US13626793
申请日：2012-09-25
申请人： Eric A. Hudson , Andrew D. Bailey, III , Rajinder Dhindsa
发明人： Eric A. Hudson , Andrew D. Bailey, III , Rajinder Dhindsa
IPC分类号： C23F1/00
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32091 , H01J37/321 , H01J37/32192 , H01J37/32357 , H01J37/32449 , H01J37/32458 , H01J37/32715 , H01J2237/334 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069
摘要： Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.
摘要翻译：用于蚀刻具有至少一个初级等离子体产生区域的等离子体处理室中的衬底和通过半屏障结构从所述初级等离子体产生区域分离的次级等离子体产生区域的方法。该方法包括从主要等离子体产生区域中的主进料气体产生主要等离子体。该方法还包括从次级等离子体产生区域中的二次进料气体产生二次等离子体，以使至少一些来自第二等离子体的物质迁移到初级等离子体产生区域。该方法另外包括在初级等离子体已经用来自二次等离子体的迁移物质增强之后用初级等离子体蚀刻基板。

10. 发明授权

US08236188B2 Method for low-K dielectric etch with reduced damage 有权
标题翻译：低K电介质蚀刻方法，减少损伤
公开(公告)号：US08236188B2
公开(公告)日：2012-08-07
申请号：US12756086
申请日：2010-04-07
申请人： Bing Ji , Kenji Takeshita , Andrew D. Bailey, III , Eric A. Hudson , Maryam Moravej , Stephen M. Sirard , Jungmin Ko , Daniel Le , Robert C. Hefty , Yu Cheng , Gerardo A. Delgadino , Bi-Ming Yen
发明人： Bing Ji , Kenji Takeshita , Andrew D. Bailey, III , Eric A. Hudson , Maryam Moravej , Stephen M. Sirard , Jungmin Ko , Daniel Le , Robert C. Hefty , Yu Cheng , Gerardo A. Delgadino , Bi-Ming Yen
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138
摘要： A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
摘要翻译：通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。通过有机掩模将特征蚀刻到低k电介质层中。在低k电介质层上沉积氟碳层。氟碳层被固化。剥去有机面膜。

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