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1. 发明申请

US20060073997A1 Solutions for cleaning silicon semiconductors or silicon oxides 审中-公开
标题翻译：清洗硅半导体或硅氧化物的解决方案
公开(公告)号：US20060073997A1
公开(公告)日：2006-04-06
申请号：US10955810
申请日：2004-09-30
申请人： Oana Leonte , Robert Chebi
发明人： Oana Leonte , Robert Chebi
IPC分类号： C23G1/00 , C11D7/32
CPC分类号： C11D3/044 , C11D1/523 , C11D1/90 , C11D3/2058 , C11D3/2079 , C11D3/30 , C11D3/33 , C11D3/3947 , C11D7/06 , C11D7/261 , C11D7/265 , C11D7/3218 , C11D7/3245 , C11D11/0047 , H01L21/02052 , H01L21/0206
摘要： A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an α,α-dihydroxyphenol, a carboxylic acid, a phosphonic acid, a chelating agent or a surfactant. The weight ratio of ammonium hydroxide to peroxide to water is between about 1:1:5 and 1:1-4:50, the weight ratio of ammonium hydroxide to water is between 1:5 and 1:50, and the molar ratio of component A to ammonium hydroxide is between 1:10 and 1:5000 is disclosed. The solution can achieve the efficiency equivalent to that of the conventional RCA two-step cleaning solution within a shorter time by one step preserving the silicon and silicon oxide substrate integrity and effectively remove contaminants such as organics, particles and metals from the surfaces of silicon semiconductors and silicon oxides without using strong acids such as HCl and sulfuric acid.
摘要翻译：公开了一种用于清洁硅半导体或硅氧化物的解决方案，以及使用该溶液来清洗硅半导体或氧化硅的方法。溶液包括过氧化氢，氢氧化铵，链烷醇胺，以及四烷基氢氧化铵，链烷醇酰胺，酰氨基 - 甜菜碱，α，α-二羟基苯酚，羧酸，膦酸，螯合剂或表面活性剂中的至少一种。氢氧化铵与过氧化氢与水的重量比约为1:1:5:1:1-4:50，氢氧化铵与水的重量比为1:5至1:50，摩尔比组分A与氢氧化铵的摩尔比为1:10至1:5000。该解决方案可以在较短时间内实现与传统RCA两步清洗溶液相当的效率，通过一步保持硅和氧化硅底物的完整性，并有效地从硅半导体表面去除有机物，颗粒和金属等污染物和氧化硅，而不使用强酸如HCl和硫酸。

2. 发明申请

US20060051965A1 Methods of etching photoresist on substrates 审中-公开
标题翻译：在基板上蚀刻光刻胶的方法
公开(公告)号：US20060051965A1
公开(公告)日：2006-03-09
申请号：US10934697
申请日：2004-09-07
申请人： Erik Edelberg , Robert Chebi , Alex Panchula
发明人： Erik Edelberg , Robert Chebi , Alex Panchula
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： G03F7/40 , G03F7/427 , H01L21/31138
摘要： Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a hydrocarbon gas, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.
摘要翻译：在覆盖无机层的有机光致抗蚀剂上蚀刻富碳层的方法可以利用包括含氟气体，含氧气体和烃气体的工艺气体以及一种或多种任选的组分来产生有效的等离子体用无机层的低去除蚀刻富碳层。富碳层可以在相同的处理室中除去，或者可以在不同的处理室中除去，以用于去除体光致抗蚀剂。

3. 发明授权

US06759336B1 Methods for reducing contamination of semiconductor substrates 有权
标题翻译：减少半导体衬底污染的方法
公开(公告)号：US06759336B1
公开(公告)日：2004-07-06
申请号：US10295912
申请日：2002-11-18
申请人： Robert Chebi , David Hemker
发明人： Robert Chebi , David Hemker
IPC分类号： H01L21311
CPC分类号： H01L21/67115 , B08B7/0071 , H01L21/67028 , H01L21/67103 , H01L21/67109 , Y10S414/135 , Y10S414/136 , Y10S414/137 , Y10S414/138 , Y10S414/139 , Y10S414/14 , Y10S438/904 , Y10S438/913
摘要： Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove absorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.
摘要翻译：提供了减少处理后的半导体衬底污染的方法。该方法包括加热经处理的基底以通过热解吸从基底表面除去吸收的化学物质。热解吸可以原位或非原位进行。可以通过对流，传导和/或辐射加热来加热衬底。也可以通过用惰性等离子体处理处理的基板的表面来加热基板，在惰性等离子体中处理等离子体中的离子轰击衬底表面，提高其温度。也可以通过在将衬底从处理室传送过程中向衬底施加热能和/或通过将衬底传送到传输模块（例如，装载锁）或第二处理室来进行热解吸，加热。通过在衬底表面上吹扫惰性气体可以提高运输过程中的热解吸。

4. 发明授权

US06528427B2 Methods for reducing contamination of semiconductor substrates 有权
公开(公告)号：US06528427B2
公开(公告)日：2003-03-04
申请号：US09820690
申请日：2001-03-30
申请人： Robert Chebi , David Hemker
发明人： Robert Chebi , David Hemker
IPC分类号： H01L21311
CPC分类号： H01L21/67115 , B08B7/0071 , H01L21/67028 , H01L21/67103 , H01L21/67109 , Y10S414/135 , Y10S414/136 , Y10S414/137 , Y10S414/138 , Y10S414/139 , Y10S414/14 , Y10S438/904 , Y10S438/913
摘要： Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove adsorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.

5. 发明授权

US07824519B2 Variable volume plasma processing chamber and associated methods 有权
标题翻译：可变体积等离子体处理室及相关方法
公开(公告)号：US07824519B2
公开(公告)日：2010-11-02
申请号：US11750985
申请日：2007-05-18
申请人： Ing-Yann Albert Wang , Robert Chebi
发明人： Ing-Yann Albert Wang , Robert Chebi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32458
摘要： A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.
摘要翻译：等离子体处理室包括基板支撑件，该基板支撑件具有限定的顶表面，以在该腔室内以基本上水平的方向支撑基板。等离子体处理室还包括多个伸缩构件，其设置在基板支撑件的外围的腔室内。伸缩构件的数量也相对于衬底支撑件的顶表面的中心以同心的方式设置。多个伸缩构件中的每一个被限定为在基本上垂直的方向上独立地移动，以便能够调整衬底支撑件的顶表面之上的开放体积，从而使得能够在开口体积以内的等离子体状态衬底支撑的顶表面。

6. 发明授权

US07547635B2 Process for etching dielectric films with improved resist and/or etch profile characteristics 有权
标题翻译：用于蚀刻具有改进的抗蚀剂和/或蚀刻轮廓特性的介电膜的工艺
公开(公告)号：US07547635B2
公开(公告)日：2009-06-16
申请号：US10170424
申请日：2002-06-14
申请人： Aaron Eppler , Mukund Srinivasan , Robert Chebi
发明人： Aaron Eppler , Mukund Srinivasan , Robert Chebi
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x≧1, y≧1, and z≧0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x≧1 and y≧4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.
摘要翻译：蚀刻电介质层中的开口的过程包括在等离子体蚀刻反应器中支撑半导体衬底，所述衬底在电介质层上方具有电介质层和图案化的光致抗蚀剂和/或硬掩模层; 向等离子体蚀刻反应器供应包括（a）碳氟化合物气体（CxFyHz，其中x> = 1，y> = 1和z> = 0）的蚀刻剂气体，（b）含硅烷的气体，氢气或烃气体（CxHy，其中x> = 1和y> = 4），（c）任选的含氧气体，和（d）任选的惰性气体，其中含硅烷气体与碳氟化合物气体的流速比为小于或等于0.1，或者氢气或烃气体与碳氟化合物气体的流量比小于或等于0.5; 将蚀刻剂气体激发成等离子体; 以及具有增强的光致抗蚀剂/硬掩模的电介质层中的等离子体蚀刻开口至介电层选择性和/或最小的光致抗蚀剂失真或条纹。

7. 发明申请

US20080286489A1 Variable Volume Plasma Processing Chamber and Associated Methods 有权
标题翻译：可变体积等离子体处理室和相关方法
公开(公告)号：US20080286489A1
公开(公告)日：2008-11-20
申请号：US11750985
申请日：2007-05-18
申请人： Ing-Yann Albert Wang , Robert Chebi
发明人： Ing-Yann Albert Wang , Robert Chebi
IPC分类号： H05H1/24
CPC分类号： H01J37/32458
摘要： A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.
摘要翻译：等离子体处理室包括基板支撑件，该基板支撑件具有限定的顶表面，以在该腔室内以基本上水平的方向支撑基板。等离子体处理室还包括多个伸缩构件，其设置在基板支撑件的外围的腔室内。伸缩构件的数量也相对于衬底支撑件的顶表面的中心以同心的方式设置。多个伸缩构件中的每一个被限定为在基本上垂直的方向上独立地移动，以便能够调整衬底支撑件的顶表面之上的开放体积，从而使得能够在开口体积以内的等离子体状态衬底支撑的顶表面。

8. 发明申请

US20060219361A1 High strip rate downstream chamber 有权
公开(公告)号：US20060219361A1
公开(公告)日：2006-10-05
申请号：US11096820
申请日：2005-04-01
申请人： Ing-Yann Wang , Jaroslaw Winniczek , David Cooperberg , Erik Edelberg , Robert Chebi
发明人： Ing-Yann Wang , Jaroslaw Winniczek , David Cooperberg , Erik Edelberg , Robert Chebi
IPC分类号： H01L21/306 , C03C25/68
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/3244 , Y10T137/0318 , Y10T137/85938
摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

9. 发明授权

US09330926B2 Fabrication of a silicon structure and deep silicon etch with profile control 有权
标题翻译：通过轮廓控制制造硅结构和深度硅蚀刻
公开(公告)号：US09330926B2
公开(公告)日：2016-05-03
申请号：US12338950
申请日：2008-12-18
申请人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
发明人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/02057 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
摘要翻译：提供了将特征蚀刻成具有稳态气流的硅层的方法。提供了包含含氧气体和含氟气体的蚀刻气体。从蚀刻气体提供等离子体。然后，停止蚀刻气体的流动。

10. 发明申请

US20120103524A1 PLASMA PROCESSING APPARATUS WITH REDUCED EFFECTS OF PROCESS CHAMBER ASYMMETRY 审中-公开
标题翻译：具有减少过程室不对称效应的等离子体处理装置
公开(公告)号：US20120103524A1
公开(公告)日：2012-05-03
申请号：US13240451
申请日：2011-09-22
申请人： Robert CHEBI , Alan CHESHIRE , Stanley DETMAR , Gabriel ROUPILLARD
发明人： Robert CHEBI , Alan CHESHIRE , Stanley DETMAR , Gabriel ROUPILLARD
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/3211
摘要： Plasma processing apparatus that provide an asymmetric plasma distribution within the processing apparatus are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a processing volume with a substrate support disposed therein; and a first RF coil disposed above the substrate support to couple RF energy into the processing volume, wherein an electric field generated by RF energy moving along the first RF coil is asymmetric about a central axis of the substrate support. In some embodiments, a pump port is disposed asymmetrically with respect to the processing volume to remove one or more gases from the processing volume. In some embodiments, the first RF coil is asymmetrically disposed about the central axis of the substrate support.
摘要翻译：本文提供了在处理装置内提供不对称等离子体分布的等离子体处理装置。在一些实施例中，等离子体处理装置可以包括具有处理容积的处理室，其中设置有衬底支撑件; 以及设置在所述衬底支撑件上方以将RF能量耦合到所述处理容积中的第一RF线圈，其中由所述第一RF线圈移动的RF能量产生的电场围绕所述衬底支撑件的中心轴线是不对称的。在一些实施例中，泵端口相对于处理容积非对称地设置，以从处理容积去除一个或多个气体。在一些实施例中，第一RF线圈围绕衬底支撑件的中心轴线不对称地设置。

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