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1. 发明申请

US20060258032A1 Method for forming alignment layer of LCD 有权
标题翻译：用于形成LCD对准层的方法
公开(公告)号：US20060258032A1
公开(公告)日：2006-11-16
申请号：US11195903
申请日：2005-08-03
申请人： Dong Suh , Young Park , Soo Choi , Gon Son
发明人： Dong Suh , Young Park , Soo Choi , Gon Son
IPC分类号： H01L21/00 , H01L21/84 , G02F1/13 , H01L21/337
CPC分类号： G02F1/133723 , G02F2202/025
摘要： Disclosed is a method for forming an alignment layer of an LCD capable of preventing Mura defects when the alignment layer is formed through an LC one drop fill process. The method includes the steps of coating a mixing solution including a solvent and organic polymer materials consisting of polyimide and polyamic acid on the substrates, pre-curing the mixing solution twice with mutually different temperatures, thereby volatizing the solvent and obtaining stable phase-separation between the organic polymer materials and the solvent, and completely curing the pre-cured mixing solution at a temperature of about 180 to 240° C. A primary pre-curing process is performed at a temperature less than 50° C. under vacuum pressure of about −35 to −50 psi, and a secondary pre-curing process is performed at a temperature within a range of about 50 to 75° C. under the same vacuum pressure.
摘要翻译：公开了一种当通过LC一滴式填充工艺形成取向层时能够防止Mura缺陷的LCD的取向层的形成方法。该方法包括以下步骤：将包含溶剂的混合溶液和由聚酰亚胺和聚酰胺酸组成的有机聚合物材料涂布在基板上，将相互不同的温度预混合两次，从而挥发溶剂并获得稳定的相分离有机聚合物材料和溶剂，并且在约180至240℃的温度下完全固化预固化的混合溶液。在小于50℃的温度下，在大约的真空压力下进行初步预固化过程 -35至-50psi，并且在相同的真空压力下在约50至75℃的温度下进行二次预固化过程。

2. 发明申请

US20060032586A1 Reducing electrostatic charge by roughening the susceptor 有权
公开(公告)号：US20060032586A1
公开(公告)日：2006-02-16
申请号：US11182168
申请日：2005-07-15
申请人： Soo Choi , Beom Park , Quanyuan Shang , John White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Choi , Beom Park , Quanyuan Shang , John White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.

3. 发明申请

US20050233263A1 Growth of carbon nanotubes at low temperature 审中-公开
标题翻译：碳纳米管在低温下生长
公开(公告)号：US20050233263A1
公开(公告)日：2005-10-20
申请号：US10827915
申请日：2004-04-20
申请人： Beom Park , Soo Choi , John White
发明人： Beom Park , Soo Choi , John White
IPC分类号： C01B31/02 , C30B25/00 , C30B29/02 , C30B29/60 , G03F7/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/36 , C30B25/005 , C30B29/02 , C30B29/605
摘要： A method for depositing carbon nanotubes on a large substrate is provided. The carbon nanotubes are deposited on a plasma treated transition metal layer on a substrate. In one aspect, the transition metal layer is treated with a plasma of argon or a mixture of nitrogen and hydrogen. The carbon nanotubes are deposited by thermal chemical vapor deposition at a substrate temperature of between about 400° C. and about 450° C.
摘要翻译：提供了一种在大型基板上沉积碳纳米管的方法。将碳纳米管沉积在基板上的等离子体处理的过渡金属层上。一方面，用等离子体氩或氮和氢的混合物处理过渡金属层。通过热化学气相沉积在约400℃至约450℃的衬底温度下沉积碳纳米管。

4. 发明申请

US20080061793A1 Detection and Suppression of Electrical Arcing 有权
标题翻译：电弧的检测和抑制
公开(公告)号：US20080061793A1
公开(公告)日：2008-03-13
申请号：US11925893
申请日：2007-10-27
申请人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Choi
发明人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Choi
IPC分类号： G01R31/08 , G01N27/62
CPC分类号： G01R31/1254
摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.
摘要翻译：用于检测或抑制连接到电源的负载的电阻抗的电弧或其他异常变化的方法和装置。优选地，负载是用于制造诸如半导体和平板显示器的电子部件的等离子体室。通过监视一个或多个传感器来检测电弧。每个传感器或者响应于由电源提供给等离子体的电力的特性，或者耦合到等离子体室，以便对室内的电磁条件作出响应。通过在短时间内减少功率输出来抑制电弧。然后电源增加其功率输出，最好提高到其原始值。如果电弧恢复，则电源重复减少然后恢复功率输出的步骤。

5. 发明申请

US20060185795A1 Anodized substrate support 有权
标题翻译：阳极氧化的底物支持
公开(公告)号：US20060185795A1
公开(公告)日：2006-08-24
申请号：US11406136
申请日：2006-04-18
申请人： Soo Choi , Beom Park , Quanyuan Shang , Robert Greene , John White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Choi , Beom Park , Quanyuan Shang , Robert Greene , John White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： H01L21/306 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约80至约200微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于将基底支撑在约80至约200微英寸之间。

6. 发明申请

US20060028755A1 Method and apparatus for providing positional information on a disk 失效
公开(公告)号：US20060028755A1
公开(公告)日：2006-02-09
申请号：US11245644
申请日：2005-10-07
申请人： Tung Nguyen , Sang Chu , Jun Shim , Kang Lee , Soo Choi , Seong Yu
发明人： Tung Nguyen , Sang Chu , Jun Shim , Kang Lee , Soo Choi , Seong Yu
IPC分类号： G11B5/596
CPC分类号： G11B5/59644 , G11B5/5556
摘要： The present invention is a method and apparatus for positioning a read/write head in a hard disk drive. The method comprises providing a disk having a at least one side with a plurality of tracks, where each of the tracks has a servo field with servo bits. The servo bits are read to provide a position signal for positioning a read/write head. The method determines a difference in position between an initial and a subsequent position of the read/write head on a track, where the subsequent location occurs after the read/write head has moved one revolution from the initial position on the track. The initial and subsequent positions are offset laterally. The method generates a compensation signal based on the initial position, the subsequent position and the difference. The position signal and the compensation signal are combined to provide a compensated position signal for positioning the read/write head. Various embodiments are described.

7. 发明申请

US20060005771A1 Apparatus and method of shaping profiles of large-area PECVD electrodes 审中-公开
标题翻译：大面积PECVD电极成形轮廓的装置和方法
公开(公告)号：US20060005771A1
公开(公告)日：2006-01-12
申请号：US11143506
申请日：2005-06-02
申请人： John White , Emanuel Beer , Wei Chang , Robin Tiner , Soo Choi
发明人： John White , Emanuel Beer , Wei Chang , Robin Tiner , Soo Choi
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23C16/4583 , H01J37/3244 , H01J2237/3325
摘要： An apparatus and method for shaping profiles of a large-area PECVD electrode is provided. A plasma-enhanced CVD chamber for processing a large-area substrate is first provided. The chamber includes a lower electrode that supports a large area substrate. The lower electrode is shaped to selectively conform the supported substrate in a selected orientation under operating conditions. The orientation may be either planar or nonplanar. The substrate complies with the shape of the electrode so the substrate is substantially parallel to an upper electrode in the chamber, and/or to a gas diffusion plate in the chamber. The lower electrode comprises a substrate support fabricated from a material of insufficient strength to support itself at operating temperatures and pressure in the chamber. The shape of the substrate support is adjusted by modifying the dimensions and/or planarity of a supporting base structure, and/or by appropriately varying the thickness of the substrate support.
摘要翻译：提供了一种用于形成大面积PECVD电极的轮廓的装置和方法。首先提供用于处理大面积基板的等离子体增强CVD室。该室包括支撑大面积基板的下电极。下电极被成形为在操作条件下以选定的方向选择性地使受支撑的衬底符合。取向可以是平面或非平面的。基板符合电极的形状，因此基板基本上平行于腔室中的上部电极，和/或腔室中的气体扩散板。下电极包括由强度不足的材料制成的衬底支撑件，以在腔室中的操作温度和压力下自身支撑。通过改变支撑基底结构的尺寸和/或平面度和/或通过适当地改变基底支撑件的厚度来调节基底支撑件的形状。

8. 发明申请

US20070264443A1 Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits 审中-公开
标题翻译：用于避免等离子体源气体供应管道中的寄生等离子体的装置和方法
公开(公告)号：US20070264443A1
公开(公告)日：2007-11-15
申请号：US11430759
申请日：2006-05-09
申请人： Soo Choi , John White
发明人： Soo Choi , John White
IPC分类号： B05D3/00 , C23C16/00
CPC分类号： C23C16/4401 , C23C16/5096 , H01J37/3244 , H01J2237/022
摘要： It has been discovered that a parasitic plasma problem which has existed with respect to the incoming plasma source gases to an processing chamber plasma generation system for PECVD thin film deposition can be avoided. The stability of a parasitic plasma is avoided by increasing the pressure in a conduit through which the plasma source gases flow. While avoidance of formation of a parasitic plasma in plasma source gas conduits leading to the processing chamber plasma generation system may be achieved by inserting a fixed restrictor in a conduit through which the plasma source gases flow, use of a variable surface restrictor in the conduit enables not only avoidance of the formation of a parasitic plasma in incoming plasma source gases, but also easier cleaning of the processing chamber plasma generation system when a remotely generated plasma is used for such cleaning.
摘要翻译：已经发现，可以避免相对于入射的等离子体源气体存在于用于PECVD薄膜沉积的处理室等离子体产生系统中的寄生等离子体问题。通过增加等离子体源气体通过的管道中的压力来避免寄生等离子体的稳定性。虽然避免在导致处理室等离子体产生系统的等离子体源气体导管中形成寄生等离子体可以通过将固定的限流器插入到等离子体源气体流过的导管中，使用导管中的可变表面限制器来实现不仅避免了在输入的等离子体源气体中形成寄生等离子体，而且当远程产生的等离子体用于这种清洁时，也更容易地清洁处理室等离子体产生系统。

9. 发明申请

US20060228496A1 Plasma uniformity control by gas diffuser curvature 有权
标题翻译：气体扩散器曲率等离子体均匀性控制
公开(公告)号：US20060228496A1
公开(公告)日：2006-10-12
申请号：US11173210
申请日：2005-07-01
申请人： Soo Choi , Beom Park , John White , Robin Tiner
发明人： Soo Choi , Beom Park , John White , Robin Tiner
IPC分类号： H05H1/24
CPC分类号： H01J37/32449 , H01J37/3244
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过气体通道的扩散板，并且在气体通道的下游侧具有空心阴极腔。扩散板的下游侧具有改善通过PECVD沉积的薄膜的厚度均匀性和膜特性均匀性的曲率，特别是SiN和非晶硅膜。该曲率优选地由圆或椭圆的圆弧描述，其顶点位于扩散板的中心点。在一个方面，空心阴极腔体积密度，表面积密度或扩散器的空腔密度从扩散器的中心增加到外边缘。还提供了制造这种扩散板的方法。

10. 发明申请

US20060228490A1 Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems 审中-公开
标题翻译：用于大尺寸PECVD系统的具有多尺寸孔的挡板的气体分布均匀性改善
公开(公告)号：US20060228490A1
公开(公告)日：2006-10-12
申请号：US11101305
申请日：2005-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Choi , John White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Choi , John White
IPC分类号： C23F1/00 , B01J19/08 , C23C16/00 , H01L21/306
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

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