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1. 发明申请

US20050279262A1 INJECTION OF OVERFIRE AIR THROUGH THE UPPER FURNACE ARCH FOR PENETRATION AND MIXING WITH FLUE GAS 有权
标题翻译：通过上火炉注射过量空气进行渗透和与燃气混合
公开(公告)号：US20050279262A1
公开(公告)日：2005-12-22
申请号：US10868847
申请日：2004-06-17
申请人： Donald Morrison , Thomas Laursen , Paul Stonkus
发明人： Donald Morrison , Thomas Laursen , Paul Stonkus
IPC分类号： F22B21/34 , F23L9/02 , F23M5/00 , F23B5/00
CPC分类号： F22B21/343
摘要： The boiler nose or arch of a furnace projects into the upwardly flowing flue gas to form a restricted passage. Overfire air is introduced into the cavity or plenum of the boiler nose and flows to injection ports along the inclined surface of the boiler nose to provide overfire air for penetration into and mixing with the flue gases in the restricted flue gas passage.
摘要翻译：锅炉的炉子或炉子的拱形物投射到向上流动的废气中以形成限制通道。过热空气被引入锅炉鼻部的空腔或气室中，并沿着锅炉鼻部的倾斜表面流入注射口，以提供过量的空气，用于渗入并与受限烟道气通道中的烟气混合。

2. 发明授权

US07314402B2 Method and apparatus for controlling slurry distribution 有权
标题翻译：控制浆料分布的方法和装置
公开(公告)号：US07314402B2
公开(公告)日：2008-01-01
申请号：US09999401
申请日：2001-11-15
申请人： Thomas Laursen , Guangying Zhang
发明人： Thomas Laursen , Guangying Zhang
IPC分类号： B24B1/00
CPC分类号： B24B57/02 , B24B37/26 , B24B55/02 , C23F3/00 , G11B5/8404 , H01L21/30625 , H01L21/67219
摘要： A method and apparatus for ‘through-the-pad’ delivery of slurry polishing agents directly to the land areas of a polishing pad is disclosed. The present invention further provides for improved control of the chemical composition of the slurry to address loss of chemical reactivity of the slurry during the polishing cycle. Additionally, various groove modifications to the polishing surface of the pad are also disclosed for improved slurry retention over substantially the entire surface of the polishing pad and reduction of the slow band effect. The present invention thus provides for a higher degree of planarization and uniformity of material removed from the surface of a processed workpiece in order to eliminate, or otherwise reduce, small-scale roughness and large-scale topographic differentials as well as to reduce the Cost-of-Ownership associated with slurry costs.
摘要翻译：公开了一种用于将浆料抛光剂直接输送到抛光垫的陆地区域的方法和装置。本发明还提供改进的浆料化学成分的控制，以解决在抛光循环期间浆料的化学反应性的损失。此外，还公开了对抛光垫的抛光表面的各种凹槽修改，以改善在抛光垫的基本上整个表面上的浆料保留并减少慢带效应。因此，本发明提供了从加工的工件的表面去除的材料的更高程度的平坦化和均匀性，以便消除或以其他方式减小小尺度粗糙度和大规模地形差异，以及降低成本 - 与浆料成本相关的所有权。

3. 发明授权

US06821794B2 Flexible snapshot in endpoint detection 失效
标题翻译：端点检测灵活的快照
公开(公告)号：US06821794B2
公开(公告)日：2004-11-23
申请号：US10264590
申请日：2002-10-04
申请人： Thomas Laursen , Mamoru Yamayoshi
发明人： Thomas Laursen , Mamoru Yamayoshi
IPC分类号： H01L2100
CPC分类号： B24B37/013 , H01L21/31053 , H01L21/3212 , H01L22/26
摘要： A system and method for determining endpoint detection in semiconductor wafer planarization is provided. The system and method provide a flexible solution that can compensate for baseline variability induced errors that may otherwise occur in endpoint detection. The system uses an endpoint detection signal that monitors the optical characteristics of the wafer being planarized. The system and method continue to monitor the detection signal during planarization until it meets endpoint criterion that indicates endpoint completion. When the endpoint criterion is reached, a new snapshot is taken from a previous time period and a new baseline is calculated. The endpoint detection signal is then recalculated based upon the new baseline and the recalculated detection signal is again compared to the endpoint criterion. If the recalculated endpoint detection signal again substantially meets the endpoint criterion then the detection of endpoint is confirmed. If the recalculated detection signal no longer meets the endpoint criterion, the planarization process continues with the new baseline used as the basis for endpoint detection.
摘要翻译：提供了一种用于确定半导体晶片平面化中的端点检测的系统和方法。该系统和方法提供了一种灵活的解决方案，可以补偿在端点检测中可能发生的基线变异性诱发的错误。该系统使用端点检测信号来监视被平坦化的晶片的光学特性。系统和方法在平坦化期间继续监测检测信号，直到满足指示端点完成的端点标准。当达到端点标准时，从先前的时间段获取新的快照，并计算新的基线。然后基于新的基线重新计算端点检测信号，并且重新计算的检测信号再次与端点标准进行比较。如果重新计算的端点检测信号再次基本上满足端点标准，则确认端点的检测。如果重新计算的检测信号不再满足端点标准，则平坦化过程将继续以新的基线作为端点检测的基础。

4. 发明申请

US20060255016A1 Method for polishing copper on a workpiece surface 审中-公开
标题翻译：在工件表面上抛光铜的方法
公开(公告)号：US20060255016A1
公开(公告)日：2006-11-16
申请号：US11489874
申请日：2006-07-19
申请人： Julia Svirchevski , Saket Chadda , Ismail Emesh , Thomas Laursen , Bentley Palmer , Sanjay Basak , Krishna Murella
发明人： Julia Svirchevski , Saket Chadda , Ismail Emesh , Thomas Laursen , Bentley Palmer , Sanjay Basak , Krishna Murella
IPC分类号： C03C15/00 , H01L21/461
CPC分类号： B24B27/0023 , B24B37/042 , B24B37/345 , H01L21/3212
摘要： A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.
摘要翻译：提供了一种在工件上抛光金属层的方法，其中在金属层和抛光表面之间产生相对运动，并且其中金属层在其上具有防抛光膜。首先对金属层进行预处理以基本上除去耐抛光膜。接着，在抛光液的存在下，金属层在金属层与研磨面之间以低压被抛光。预处理可以通过例如溅射来实现，在研磨抛光溶液的存在下抛光耐抛光膜，在膜和抛光表面之间以更高的压力抛光耐抛光膜，保持预处理步骤的温度基本上在10摄氏度和30摄氏度之间，并化学去除膜。

5. 发明申请

US20050026542A1 Detection system for chemical-mechanical planarization tool 审中-公开
标题翻译：化学机械平面化工具检测系统
公开(公告)号：US20050026542A1
公开(公告)日：2005-02-03
申请号：US10633241
申请日：2003-07-31
申请人： Tezer Battal , Thomas Laursen
发明人： Tezer Battal , Thomas Laursen
IPC分类号： B24B1/00 , B24B37/04 , B24B49/00 , B24B49/12 , B24B51/00 , B24D7/12 , H01L21/66
CPC分类号： B24B37/013 , B24B49/12 , B24D7/12 , H01L22/26
摘要： Methods and apparatus are provided for endpoint detection in a chemical mechanical planarization (CMP) process. Reflectance spectra data is taken periodically in different areas of a surface of a semiconductor wafer during a chemical mechanical planarization process. Three different reflectance spectra are identified to determine a status of the CMP process. A first reflectance spectra data corresponds to light reflected predominately from a layer of material on the surface of the semiconductor wafer. A second reflectance spectra corresponds to the layer of material being thinned such that the second reflectance spectra is modified by an underlying layer of material. A third reflectance spectra corresponds to light reflected predominately from the underlying layer of material.
摘要翻译：提供了在化学机械平面化（CMP）工艺中用于端点检测的方法和装置。在化学机械平面化处理期间，在半导体晶片的表面的不同区域周期性地取出反射光谱数据。识别三种不同的反射光谱以确定CMP过程的状态。第一反射光谱数据对应于主要从半导体晶片表面上的材料层反射的光。第二反射光谱对应于被稀释的材料层，使得第二反射光谱被下层材料修饰。第三反射光谱对应于主要从下层材料反射的光。

6. 发明申请

US20050016861A1 Method for planarizing a work piece 审中-公开
标题翻译：平面化工件的方法
公开(公告)号：US20050016861A1
公开(公告)日：2005-01-27
申请号：US10627165
申请日：2003-07-24
申请人： Thomas Laursen , Vishwas Hardikar
发明人： Thomas Laursen , Vishwas Hardikar
IPC分类号： B24B37/04 , B24B57/02 , C25D5/22 , C25D5/52 , H01L21/02 , H01L21/288 , H01L21/321 , H01L21/768
CPC分类号： B24B57/02 , B24B37/26 , C25D5/22 , H01L21/02074 , H01L21/2885 , H01L21/3212 , H01L21/32125 , H01L21/7684 , H01L21/76877
摘要： Methods are provided for planarizing a work piece such as a semiconductor wafer. One such method comprises the steps of providing a semiconductor wafer having an insulating layer on a surface thereof, the insulating layer comprising a field region and a plurality of features. A barrier layer is formed overlying at least the field region and then a layer comprising copper and having a substantially planar upper surface is formed overlying the barrier layer and filling the features in the insulating layer. The layer comprising copper and the barrier layer are then planarized or polished on a single polishing pad to remove the layer comprising copper and the barrier layer from the field region.
摘要翻译：提供了用于平面化半导体晶片等工件的方法。一种这样的方法包括以下步骤：在其表面上提供具有绝缘层的半导体晶片，所述绝缘层包括场区域和多个特征。形成至少覆盖场区的阻挡层，然后形成覆盖阻挡层并填充绝缘层中的特征的包含铜并且具有基本平坦的上表面的层。然后将包含铜和阻挡层的层在单个抛光垫上进行平面化或抛光，以从场区域去除包含铜和阻挡层的层。

7. 发明授权

US06555466B1 Two-step chemical-mechanical planarization for damascene structures on semiconductor wafers 失效
标题翻译：半导体晶圆上镶嵌结构的两步化学机械平面化
公开(公告)号：US06555466B1
公开(公告)日：2003-04-29
申请号：US09280767
申请日：1999-03-29
申请人： Thomas Laursen , Malcolm K. Grief , Krishna P. Murella , Sanjay Basak
发明人： Thomas Laursen , Malcolm K. Grief , Krishna P. Murella , Sanjay Basak
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/31053 , H01L21/3212 , H01L21/76819
摘要： A method of improving planarity of semiconductor wafer surfaces containing damascene and dual-damascene circuitry using chemical-mechanical polishing techniques. The method includes using a first polishing step to substantially remove excess surface metal up to a detected end point. After rinsing, a second step of chemical-mechanical polishing is applied, using a second slurry that has a higher selectivity for dielectric than metal, preferably from 1.8 to 4 or more times greater. The second step of polishing, in accordance with the invention, has been found to substantially eliminate dishing and improve planarity.
摘要翻译：使用化学机械抛光技术改善包含镶嵌和双镶嵌电路的半导体晶片表面的平面性的方法。该方法包括使用第一抛光步骤将基本上除去多余的表面金属直到检测到的终点。冲洗后，使用具有比金属更高的电介质选择性的第二浆料，优选为1.8至4倍或更多倍的化学机械抛光的第二步骤。已经发现根据本发明的抛光的第二步骤基本上消除了凹陷并改善了平面度。

8. 发明申请

US20060151110A1 METHOD AND APPARATUS FOR CONTROLLED SLURRY DISTRIBUTION 有权
标题翻译：用于控制浆液分配的方法和装置
公开(公告)号：US20060151110A1
公开(公告)日：2006-07-13
申请号：US11276803
申请日：2006-03-15
申请人： Thomas Laursen , Guangying Zhang
发明人： Thomas Laursen , Guangying Zhang
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： B24B57/02 , B24B37/26 , B24B55/02 , C23F3/00 , G11B5/8404 , H01L21/30625 , H01L21/67219
摘要： A method and apparatus for ‘through-the-pad’ delivery of slurry polishing agents directly to the land areas of a polishing pad is disclosed. The present invention further provides for improved control of the chemical composition of the slurry to address loss of chemical reactivity of the slurry during the polishing cycle. Additionally, various groove modifications to the polishing surface of the pad are also disclosed for improved slurry retention over substantially the entire surface of the polishing pad and reduction of the slow band effect. The present invention thus provides for a higher degree of planarization and uniformity of material removed from the surface of a processed workpiece in order to eliminate, or otherwise reduce, small-scale roughness and large-scale topographic differentials as well as to reduce the Cost-of-Ownership associated with slurry costs.
摘要翻译：公开了一种用于将浆料抛光剂直接输送到抛光垫的陆地区域的方法和装置。本发明还提供改进的浆料化学成分的控制，以解决在抛光循环期间浆料的化学反应性的损失。此外，还公开了对抛光垫的抛光表面的各种凹槽修改，以改善在抛光垫的基本上整个表面上的浆料保留并减少慢带效应。因此，本发明提供了从加工的工件的表面去除的材料的更高程度的平坦化和均匀性，以便消除或以其他方式减小小尺度粗糙度和大规模地形差异，以及降低成本 - 与浆料成本相关的所有权。

9. 发明授权

US06960115B2 Multiprobe detection system for chemical-mechanical planarization tool 有权
标题翻译：化学机械平面化工具多点探测系统
公开(公告)号：US06960115B2
公开(公告)日：2005-11-01
申请号：US10646011
申请日：2003-08-22
申请人： Matthew Weldon , Thomas Laursen , Malcolm Grief , Paul Holzapfel , Mark A. Meloni , Robert Eaton
发明人： Matthew Weldon , Thomas Laursen , Malcolm Grief , Paul Holzapfel , Mark A. Meloni , Robert Eaton
IPC分类号： B24B37/013 , B24B37/10 , B24B37/30 , B24B49/10 , B24B49/12 , B24B49/14 , H01L21/00
CPC分类号： B24B37/105 , B24B37/013 , B24B37/30 , B24B49/10 , B24B49/12 , B24B49/14 , H01L21/67253
摘要： The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.
摘要翻译：本发明是用于平坦化晶片的方法和装置。以期望的空间密度跨越晶片的表面进行离散测量。可以使用闪光灯产生测量值，以用分析反射光的光谱仪将光信号从晶片的表面反射出来。可以在不同位置使用多个探针，以缩短在晶片的整个正面进行测量所需的时间，并允许多个区域基本上同时采样。控制系统接收测量及其对应位置。然后，控制系统能够分析寻找需要材料去除速率增加或减少的晶片正面上的区域或频带的数据。控制系统然后能够调整一个或多个平坦化参数以改善当前晶片或将来晶片的工艺。

10. 发明授权

US06923711B2 Multizone carrier with process monitoring system for chemical-mechanical planarization tool 有权
标题翻译：多功能载体，具有化学机械平面化工具的过程监控系统
公开(公告)号：US06923711B2
公开(公告)日：2005-08-02
申请号：US09970185
申请日：2001-10-03
申请人： Thomas Laursen , Daniel Trojan
发明人： Thomas Laursen , Daniel Trojan
IPC分类号： B24B37/013 , B24B37/10 , B24B37/30 , B24B49/10 , B24B49/12 , B24B49/14 , B24D7/12 , H01L21/00
CPC分类号： B24B37/013 , B24B37/105 , B24B37/30 , B24B49/10 , B24B49/12 , B24B49/14 , B24D7/12 , H01L21/67253
摘要： The invention improves a polishing process for a wafer retained in a multizone carrier in a chemical mechanical polishing tool. A light signal is communicated to the front surface of the wafer and the reflected light signal is captured by a metrology instrument. The metrology instrument communicates the intensity of the reflected light to a control system. The location or radial position corresponding to the reflected light signal from the front surface of the wafer may be determined by the control system. From the intensity measurements and corresponding locations, the control system is able to determine an approximate topography of the wafer. The control system may alter the pressure within one or more zones within the multizone carrier to improve the polishing process. The control system may also alter the initial pressures within the multizone carrier for future wafers based on the polishing results from the present wafer.
摘要翻译：本发明改进了在化学机械抛光工具中保留在多区域载体中的晶片的抛光工艺。光信号被传送到晶片的前表面，并且反射光信号被计量仪器捕获。计量仪器将反射光的强度传达给控制系统。对应于来自晶片前表面的反射光信号的位置或径向位置可由控制系统确定。从强度测量和对应位置，控制系统能够确定晶片的近似形貌。控制系统可以改变多区域载体内的一个或多个区域内的压力，以改善抛光过程。基于来自本晶片的抛光结果，控制系统还可以改变用于将来晶片的多区域载体内的初始压力。

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