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    • 9. 发明授权
    • Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
    • 化学机械抛光过程中厚度原位监测的方法和装置
    • US06621584B2
    • 2003-09-16
    • US09558877
    • 2000-04-26
    • Jiri PecenSaket ChaddaRahul JairathWilbur C. Krusell
    • Jiri PecenSaket ChaddaRahul JairathWilbur C. Krusell
    • G01B1106
    • B24B37/205B24B49/04G01B11/0683
    • An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.
    • 一种用于使用抛光工具和膜厚度监测器在基板的化学机械抛光(CMP)期间原位监测厚度的装置和方法。 工具上有一个开口。 该开头包含一个保护在其中的监控窗口,以创建监控通道。 膜厚监视器(包括椭圆偏振器,光束轮廓反射计或应力脉冲分析器)通过监测通道观察衬底,以提供由衬底承载的膜的厚度的指示。 该信息可用于确定CMP过程的终点,确定衬底任何给定周长处的去除率,确定跨衬底表面的平均去除速率,确定衬底表面上的去除速率变化,以及优化除去速率和均匀性 。