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    • 1. 发明授权
    • Dual medium heterojunction acoustic charge transport multiple quantum
well spatial light modulator
    • 双介质异质结声电荷传输多量子阱空间光调制器
    • US5159420A
    • 1992-10-27
    • US777883
    • 1991-10-15
    • Thomas W. GrudkowskiGlen W. DrakeFrederick J. LeonbergerRobert N. SacksWilliam J. Tanski
    • Thomas W. GrudkowskiGlen W. DrakeFrederick J. LeonbergerRobert N. SacksWilliam J. Tanski
    • G02F1/017G02F1/11
    • B82Y20/00G02F1/017G02F1/11
    • A one-dimensional or two-dimensional transmission mode spatial light modulator (SLM) includes two different mediums, one medium being a semiconductor comprising one or more heterojunction acoustic charge transport (HACT) channels 28 with surrounding layers 26, 30 vertically adjacent to a multiple quantum well (MQW) region 22, and the other being a transparent piezoelectric insulating substrate 10 thick enough to allow a surface acoustic wave (SAW) 13 to propagate therein. The SAW 13 is launched in the substrate 10 by a transducer 12 and generates electric fields which propagate the charge along the HACT channel 28 in the semiconductor medium 18. Electrodes 32, 34, 36 carry charge to and from the HACT channel 28, and light 40 is applied to a surface 44 perpendicular to the MQW region 22. Charge packets 19 in the HACT channel 28 invoke electric fields within the MQW region 22 which determines the optical absorption and/or index-of-refraction thereof, thereby determining the intensity and/or phase of each output light beam 46. Light modulation is achieved by modulating the amount of charge injected and/or the characteristics of the SAW 11. Various different materials for the substrate 10 may be used to provide desired efects.
    • 一维或二维透射模式空间光调制器(SLM)包括两种不同介质,一种介质是包括一个或多个异质结声电荷传输(HACT)通道28的半导体,其中周围层26,30垂直相邻于多个 量子阱(MQW)区域22,另一个是透明压电绝缘基板10,该透明压电绝缘基板10足够厚以允许表面声波(SAW)13在其中传播。 SAW 13通过换能器12在衬底10中发射,并产生沿着半导体介质18中的HACT通道​​28传播电荷的电场。电极32,34,36向HCC通道28和/ 40被施加到垂直于MQW区域22的表面44.HACT通道​​28中的充电包19调用MQW区域22内的电场,该电场确定光学吸收和/或其折射率,由此确定强度和 /或每个输出光束的相位46.通过调制注入的电荷量和/或SAW 11的特性来实现光调制。可以使用用于衬底10的各种不同的材料来提供期望的效果。
    • 4. 发明授权
    • High speed optoelectronic switch
    • 高速光电开关
    • US4376285A
    • 1983-03-08
    • US162073
    • 1980-06-23
    • Frederick J. LeonbergerFrederick J. O'Donnell
    • Frederick J. LeonbergerFrederick J. O'Donnell
    • H01L31/16H01L27/12H01L27/14H01L29/161
    • H01L31/162
    • An optoelectronic switch has been formed from a semi-insulating substrate of indium phosphide doped with a deep level impurity and disposed intermediate a microstrip transmission line. One conductor of the transmission line has a small gap in its metallization. Upon illumination of the gap by laser pulses which are absorbed near the semiconductor surface, a photogenerated electron-hole plasma forms thereby providing a conducting path across the gap turning the switch "on."A process of fabricating the switch is described, an important feature of which is a heat-treatment process which improves the response time of the switch to .about.50 picoseconds. Another important part of the invention is the formation of an optically semi-transparent metallic film at the gap surface. This provides greater efficiency in the coupling of light into the device at the gap while at the same time maintaining a short electronically non-conductive gap and thus a relatively low ON-state impedance for the switch.
    • 由掺杂深层杂质的磷化铟半绝缘基板形成光电开关,并设置在微带传输线之间。 传输线的一个导体在其金属化中具有小的间隙。 通过在半导体表面附近吸收的激光脉冲照射间隙,从而形成光生电子 - 空穴等离子体,从而提供穿过间隙的导电路径,使开关“接通”。 描述了制造开关的过程,其重要特征是热处理过程,其将开关的响应时间提高到差速比50皮秒。 本发明的另一重要部分是在间隙表面形成光学半透明金属膜。 这提供了在间隙处将光耦合到器件中更高的效率,同时保持短的电子不导电间隙,并且因此保持开关的相对低的导通状态阻抗。