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    • 2. 发明授权
    • Dual medium heterojunction acoustic charge transport multiple quantum
well spatial light modulator
    • 双介质异质结声电荷传输多量子阱空间光调制器
    • US5159420A
    • 1992-10-27
    • US777883
    • 1991-10-15
    • Thomas W. GrudkowskiGlen W. DrakeFrederick J. LeonbergerRobert N. SacksWilliam J. Tanski
    • Thomas W. GrudkowskiGlen W. DrakeFrederick J. LeonbergerRobert N. SacksWilliam J. Tanski
    • G02F1/017G02F1/11
    • B82Y20/00G02F1/017G02F1/11
    • A one-dimensional or two-dimensional transmission mode spatial light modulator (SLM) includes two different mediums, one medium being a semiconductor comprising one or more heterojunction acoustic charge transport (HACT) channels 28 with surrounding layers 26, 30 vertically adjacent to a multiple quantum well (MQW) region 22, and the other being a transparent piezoelectric insulating substrate 10 thick enough to allow a surface acoustic wave (SAW) 13 to propagate therein. The SAW 13 is launched in the substrate 10 by a transducer 12 and generates electric fields which propagate the charge along the HACT channel 28 in the semiconductor medium 18. Electrodes 32, 34, 36 carry charge to and from the HACT channel 28, and light 40 is applied to a surface 44 perpendicular to the MQW region 22. Charge packets 19 in the HACT channel 28 invoke electric fields within the MQW region 22 which determines the optical absorption and/or index-of-refraction thereof, thereby determining the intensity and/or phase of each output light beam 46. Light modulation is achieved by modulating the amount of charge injected and/or the characteristics of the SAW 11. Various different materials for the substrate 10 may be used to provide desired efects.
    • 一维或二维透射模式空间光调制器(SLM)包括两种不同介质,一种介质是包括一个或多个异质结声电荷传输(HACT)通道28的半导体,其中周围层26,30垂直相邻于多个 量子阱(MQW)区域22,另一个是透明压电绝缘基板10,该透明压电绝缘基板10足够厚以允许表面声波(SAW)13在其中传播。 SAW 13通过换能器12在衬底10中发射,并产生沿着半导体介质18中的HACT通道​​28传播电荷的电场。电极32,34,36向HCC通道28和/ 40被施加到垂直于MQW区域22的表面44.HACT通道​​28中的充电包19调用MQW区域22内的电场,该电场确定光学吸收和/或其折射率,由此确定强度和 /或每个输出光束的相位46.通过调制注入的电荷量和/或SAW 11的特性来实现光调制。可以使用用于衬底10的各种不同的材料来提供期望的效果。
    • 6. 发明授权
    • Increased well depth hact using a strained layer superlattice
    • 使用应变层超晶格增加深度深度
    • US5283444A
    • 1994-02-01
    • US918830
    • 1992-07-24
    • Robert N. SacksThomas W. GrudkowskiDonald E. CullenWilliam J. Tanski
    • Robert N. SacksThomas W. GrudkowskiDonald E. CullenWilliam J. Tanski
    • H01L29/15H03H9/02H01L29/161H01L29/205
    • H03H9/02976H01L29/155
    • A heterojunction acoustic charge transport device (HACT) having a charge transport channel 39 which is sandwiched between upper and lower charge confinement layers, 14,20, has the charge transport channel 39 made of a Strained Layer Superlattice (SLS) comprising alternating deep-well semiconductor layers 40, that provide a deep quantum well depth, and strain relief layers 42 that provide strain relief to prevent dislocations from occurring due to lattice mismatches between the InGaAs layers within the channel 39 and the charge confinement layers 14,20, thereby allowing the overall thickness of the channel 39 to be at least as wide as conventional HACT devices that use a GaAs channel. The strain relief layers 42 may be narrowly sized to allow tunneling of electrons across the entire channel 39 thereby allowing the charge to move as a single group, or alternatively, widely sized to provide separate isolated channels thereby allowing the charge to move in separate groups. Both embodiments provide increased quantum well depth in the channel 39 over conventional HACT devices.
    • 具有夹在上电荷限制层14和下电荷限制层14,20之间的电荷传输通道39的异质结声电荷输送装置(HACT)具有由包含交替深阱的应变层超晶格(SLS)制成的电荷传输通道39 提供深量子阱深度的半导体层40和应变消除层42,其提供应变消除以防止由于沟道39内的InGaAs层与电荷限制层14,20之间的晶格失配而发生位错,从而允许 通道39的总厚度至少与使用GaAs通道的常规HACT器件一样宽。 应变消除层42的尺寸可以窄,以允许电子穿过整个通道39,从而允许电荷作为单个组移动,或者可选地被广泛地设置以提供单独的隔离通道,从而允许电荷以分开的组移动。 两个实施例相对于传统的HACT装置在通道39中提供增加的量子阱深度。
    • 7. 发明授权
    • HACT structure with reduced surface state effects
    • HACT结构具有降低的表面状态效应
    • US5264717A
    • 1993-11-23
    • US894141
    • 1992-06-04
    • Thomas W. GrudkowskiRobert N. Sacks
    • Thomas W. GrudkowskiRobert N. Sacks
    • H01L29/205H01L29/765H03H9/02H01L29/161H01L29/84H01L29/96
    • H03H9/02976H01L29/205H01L29/765
    • A heterojunction acoustic charge transport (HACT) device having a charge transport layer 16 surrounded by upper and lower charge confinement layers 14,30, respectively, and having a cap layer 36 at the outer surface, above the upper confinement layer 30, is provided with a P-N junction to minimize the effects of surface states. An intermediate layer 34 is disposed between the cap layer 36 and upper charge confinement layer 30. The upper confinement layer 30 and intermediate layer 34 are doped with opposite polarities to provide a P-N junction which creates a built-in electric field having sufficient strength to keep mobile charge carriers, transported by a SAW along the charge transport channel, from being trapped by or recombined with surface states at the external interface of the cap layer 36. Alternatively, the intermediate layer is not present and a cap layer 42 is doped to provide one side of the P-N junction.
    • 具有分别由上部和下部电荷限制层14,30围绕的电荷传输层16的异质结声电荷传输(HACT)器件,并且在上限制层30上方在外表面具有覆盖层36,具有盖层36。 PN结以最小化表面状态的影响。 中间层34设置在盖层36和上电荷限制层30之间。上约束层30和中间层34以相反的极性掺杂以提供PN结,其产生具有足够强度的内置电场以保持 通过SAW沿着电荷传输通道传输的移动电荷载流子在盖层36的外部界面处被捕获或与表面状态重新组合。或者,中间层不存在并且覆盖层42被掺杂以提供 PN结的一侧。