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1. 发明授权

US07170056B2 Methodology and apparatus for leakage detection 有权
标题翻译：泄漏检测方法和装置
公开(公告)号：US07170056B2
公开(公告)日：2007-01-30
申请号：US11025197
申请日：2004-12-29
申请人： Dmirty Shur , Alexander Kadyshevitch
发明人： Dmirty Shur , Alexander Kadyshevitch
IPC分类号： H01J37/256 , G01N23/225
CPC分类号： G01R31/307 , G01N23/225 , H01J2237/2594
摘要： A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.
摘要翻译：一种用于测量通过晶片上的半导体器件的电介质层的泄漏的方法，包括用具有束电流的带电粒子束照射介电层。照射产生在束电流的选定范围内具有与束电流关系的晶片电流。该方法还包括确定不满足关系的束电流的边界值，以及响应于边界值确定通过电介质层的漏电流。

2. 发明申请

US20050279935A1 Methodology and apparatus for leakage detection 有权
标题翻译：泄漏检测方法和装置
公开(公告)号：US20050279935A1
公开(公告)日：2005-12-22
申请号：US11025197
申请日：2004-12-29
申请人： Dmirty Shur , Alexander Kadyshevitch
发明人： Dmirty Shur , Alexander Kadyshevitch
IPC分类号： G01N23/225 , G01R31/307 , H01J37/256
CPC分类号： G01R31/307 , G01N23/225 , H01J2237/2594
摘要： A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.
摘要翻译：一种用于测量通过晶片上的半导体器件的电介质层的泄漏的方法，包括用具有束电流的带电粒子束照射介电层。照射产生在束电流的选定范围内具有与束电流关系的晶片电流。该方法还包括确定不满足关系的束电流的边界值，以及响应于边界值确定通过电介质层的漏电流。

3. 发明授权

US07279689B2 Contact opening metrology 有权
标题翻译：联系开放计量
公开(公告)号：US07279689B2
公开(公告)日：2007-10-09
申请号：US11181659
申请日：2005-07-13
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
IPC分类号： A61N5/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

4. 发明申请

US20050173657A1 Contact opening metrology 失效
标题翻译：联系开放计量
公开(公告)号：US20050173657A1
公开(公告)日：2005-08-11
申请号：US11051339
申请日：2005-02-03
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas Hegedus
IPC分类号： H01J37/32 , H01L21/00 , H01L21/66 , H01L23/544
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

5. 发明授权

US07473911B2 Specimen current mapper 失效
标题翻译：样本电流映射器
公开(公告)号：US07473911B2
公开(公告)日：2009-01-06
申请号：US10695620
申请日：2003-10-27
申请人： Alexander Kadyshevitch , Dror Shemesh , Yaniv Brami , Dmitry Shur
发明人： Alexander Kadyshevitch , Dror Shemesh , Yaniv Brami , Dmitry Shur
IPC分类号： H01J49/44
CPC分类号： H01L22/34 , H01J37/32935 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.
摘要翻译：一种用于过程监测的方法包括在第二层中产生接触开口之后，接收具有至少部分导电的第一层的样品和在第一层上形成的第二层。带电粒子束沿着光束轴线被引导，所述光束轴线基本上偏离于与样品表面的法线的角度，以便照射分布在至少一个区域上的多个位置中的每一个中的一个或多个接触开口的样品。响应于多个位置中的每一个处的一个或多个接触开口的照射来测量流过第一层的样本电流。产生至少样品区域的图，指示响应于多个位置处的照射测量的样本电流。

6. 发明授权

US06433356B1 Hybrid organic-inorganic semiconductor structures and sensors based thereon 有权
标题翻译：混合有机 - 无机半导体结构和基于其的传感器
公开(公告)号：US06433356B1
公开(公告)日：2002-08-13
申请号：US09297303
申请日：1999-07-14
申请人： David Cahen , Konstantin Gartsman , Alexander Kadyshevitch , Ron Naaman , Abraham Shanzer
发明人： David Cahen , Konstantin Gartsman , Alexander Kadyshevitch , Ron Naaman , Abraham Shanzer
IPC分类号： H01L5100
CPC分类号： G01N27/414
摘要： A hybrid organic-inorganic semiconductor device is provided as a sensor for chemicals and light, said device being composed of: (i) at least one layer of a conducting semiconductor such as doped n-GaAs or n-(Al,Ga)As; (ii) at least one insulating layer such as of an undoped semiconductor; e.g. GaAs or (Al,Ga)As; (iii) a thin layer of multifunctional organic sensing molecules directly chemisorbed on one of its surfaces, said multifunctional organic sensing molecules having at least one functional group that binds to said surface and at least one another functional group that serves as a sensor; and (iv) two conducting pads on the top layer making electrical contact with the electrically conducting layer, so that the electrical current can flow between them at a finite distance from the surface of the device. The surface-binding functional group of the multifunctional organic sensing molecule may be one or more aliphatic or aromatic carboxyl, thiol, sulfide, hydroxamic acid or trichlorosilane groups. The functional group that serves as a sensor may be a group suitable for binding and detection of metal ions such as Cu2+, Fe2+ and Ru2+ such as radicals derived from hydroxamic acids, bipyridyl, imidazol and hydroxyquinoline, or a group that is an efficient light absorber at a given wavelength and is suitable for detection of light such as radicals derived from aliphatic or aromatic hydroxamates, substituted aromatic groups such as cyanobenzoyl and methoxybenzoyl, bipyridyl, hydroxyquinoline, or imidazolyl groups to which a metal porphyrin or a metal phtalocyanin residue is attached.
摘要翻译：提供混合有机 - 无机半导体器件作为化学和光的传感器，所述器件由以下组成：（i）至少一层导电半导体，例如掺杂的n-GaAs或n-（Al，Ga）As; （ii）至少一个绝缘层，例如未掺杂的半导体; 例如 GaAs或（Al，Ga）As; （iii）在其表面之一上直接化学吸附的多功能有机感测分子的薄层，所述多功能有机传感分子具有至少一个与所述表面结合的官能团和至少一个用作传感器的功能团; 和（iv）顶层上的两个导电焊盘与导电层电接触，使得电流可以在与器件表面有距离的位置在它们之间流动。多功能有机传感分子的表面结合官能团可以是一个或多个脂族或芳族羧基，硫醇，硫醚，异羟肟酸或三氯硅烷基团。用作传感器的官能团可以是适于结合和检测诸如Cu 2+，Fe 2+和Ru 2+的金属离子的基团，例如衍生自异羟肟酸，联吡啶，咪唑和羟基喹啉的基团，或作为有效光吸收剂的基团并且适用于光的检测，例如衍生自脂族或芳族异羟肟酸的衍生物，诸如氰基苯甲酰基和甲氧基苯甲酰基，联吡啶基，羟基喹啉或咪唑基的取代芳族基团，金属卟啉或金属酞菁残基连接到其上。

7. 发明授权

US07602197B2 High current electron beam inspection 有权
标题翻译：大电流电子束检测
公开(公告)号：US07602197B2
公开(公告)日：2009-10-13
申请号：US10560205
申请日：2004-06-07
申请人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
发明人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
IPC分类号： G01R31/00 , G01R31/307
CPC分类号： G01R31/2831 , G01R31/307
摘要： A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
摘要翻译：一种用于晶片检查的方法和装置。该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。

8. 发明授权

US07476875B2 Contact opening metrology 有权
标题翻译：联系开放计量
公开(公告)号：US07476875B2
公开(公告)日：2009-01-13
申请号：US11779224
申请日：2007-07-17
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
IPC分类号： H01J49/00 , A61N5/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

9. 发明申请

US20070057687A1 High current electron beam inspection 有权
标题翻译：大电流电子束检测
公开(公告)号：US20070057687A1
公开(公告)日：2007-03-15
申请号：US10560205
申请日：2004-06-07
申请人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
发明人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
IPC分类号： G01R31/26
CPC分类号： G01R31/2831 , G01R31/307
摘要： A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
摘要翻译：一种用于晶片检查的方法和装置。该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。

10. 发明申请

US20060113471A1 Contact opening metrology 有权
公开(公告)号：US20060113471A1
公开(公告)日：2006-06-01
申请号：US11181659
申请日：2005-07-13
申请人： Alexander Kadyshevitch , Christopher Talbot , Dmitry Shur , Andreas Hegedus
发明人： Alexander Kadyshevitch , Christopher Talbot , Dmitry Shur , Andreas Hegedus
IPC分类号： G21K7/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

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