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1. 发明授权

US07473911B2 Specimen current mapper 失效
标题翻译：样本电流映射器
公开(公告)号：US07473911B2
公开(公告)日：2009-01-06
申请号：US10695620
申请日：2003-10-27
申请人： Alexander Kadyshevitch , Dror Shemesh , Yaniv Brami , Dmitry Shur
发明人： Alexander Kadyshevitch , Dror Shemesh , Yaniv Brami , Dmitry Shur
IPC分类号： H01J49/44
CPC分类号： H01L22/34 , H01J37/32935 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.
摘要翻译：一种用于过程监测的方法包括在第二层中产生接触开口之后，接收具有至少部分导电的第一层的样品和在第一层上形成的第二层。带电粒子束沿着光束轴线被引导，所述光束轴线基本上偏离于与样品表面的法线的角度，以便照射分布在至少一个区域上的多个位置中的每一个中的一个或多个接触开口的样品。响应于多个位置中的每一个处的一个或多个接触开口的照射来测量流过第一层的样本电流。产生至少样品区域的图，指示响应于多个位置处的照射测量的样本电流。

2. 发明申请

US20070257191A1 CONTACT OPENING METROLOGY 有权
标题翻译：联系开放计量
公开(公告)号：US20070257191A1
公开(公告)日：2007-11-08
申请号：US11779224
申请日：2007-07-17
申请人： Alexander Kadyshevitch , Christopher Talbot , Dmitry Shur , Andreas Hegedus
发明人： Alexander Kadyshevitch , Christopher Talbot , Dmitry Shur , Andreas Hegedus
IPC分类号： G01N23/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

3. 发明授权

US07279689B2 Contact opening metrology 有权
标题翻译：联系开放计量
公开(公告)号：US07279689B2
公开(公告)日：2007-10-09
申请号：US11181659
申请日：2005-07-13
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
IPC分类号： A61N5/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

4. 发明申请

US20050173657A1 Contact opening metrology 失效
标题翻译：联系开放计量
公开(公告)号：US20050173657A1
公开(公告)日：2005-08-11
申请号：US11051339
申请日：2005-02-03
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas Hegedus
IPC分类号： H01J37/32 , H01L21/00 , H01L21/66 , H01L23/544
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

5. 发明授权

US07381978B2 Contact opening metrology 失效
标题翻译：联系开放计量
公开(公告)号：US07381978B2
公开(公告)日：2008-06-03
申请号：US11051339
申请日：2005-02-03
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
IPC分类号： H01J49/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

6. 发明授权

US07038224B2 Contact opening metrology 有权
公开(公告)号：US07038224B2
公开(公告)日：2006-05-02
申请号：US10434977
申请日：2003-05-09
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
IPC分类号： G01R31/02
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

7. 发明授权

US07602197B2 High current electron beam inspection 有权
标题翻译：大电流电子束检测
公开(公告)号：US07602197B2
公开(公告)日：2009-10-13
申请号：US10560205
申请日：2004-06-07
申请人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
发明人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
IPC分类号： G01R31/00 , G01R31/307
CPC分类号： G01R31/2831 , G01R31/307
摘要： A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
摘要翻译：一种用于晶片检查的方法和装置。该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。

8. 发明授权

US07476875B2 Contact opening metrology 有权
标题翻译：联系开放计量
公开(公告)号：US07476875B2
公开(公告)日：2009-01-13
申请号：US11779224
申请日：2007-07-17
申请人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
发明人： Alexander Kadyshevitch , Chris Talbot , Dmitry Shur , Andreas G. Hegedus
IPC分类号： H01J49/00 , A61N5/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

9. 发明申请

US20070057687A1 High current electron beam inspection 有权
标题翻译：大电流电子束检测
公开(公告)号：US20070057687A1
公开(公告)日：2007-03-15
申请号：US10560205
申请日：2004-06-07
申请人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
发明人： Alexander Kadyshevitch , Dmitry Shur , Christopher Talbot
IPC分类号： G01R31/26
CPC分类号： G01R31/2831 , G01R31/307
摘要： A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
摘要翻译：一种用于晶片检查的方法和装置。该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。

10. 发明申请

US20060113471A1 Contact opening metrology 有权
公开(公告)号：US20060113471A1
公开(公告)日：2006-06-01
申请号：US11181659
申请日：2005-07-13
申请人： Alexander Kadyshevitch , Christopher Talbot , Dmitry Shur , Andreas Hegedus
发明人： Alexander Kadyshevitch , Christopher Talbot , Dmitry Shur , Andreas Hegedus
IPC分类号： G21K7/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

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