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    • 6. 发明授权
    • Method and apparatus for reducing coupling switching noise in
interconnect array matrix
    • 降低互连阵列矩阵中耦合开关噪声的方法和装置
    • US5617041A
    • 1997-04-01
    • US459236
    • 1995-06-02
    • Napoleon W. LeeWei-Yi KuHy V. NguyenSholeh Diba
    • Napoleon W. LeeWei-Yi KuHy V. NguyenSholeh Diba
    • G06F17/50H03K19/177
    • H03K19/17764G06F17/5054H03K19/17704
    • In an EPLD, a feedback switching circuit is provided on a feedback line connected between a macrocell output line and a interconnect matrix wordline, the switching circuit including a memory element and a switch for passing a macrocell output signal from the output line to the interconnect matrix wordline when the memory element is in a first state, and for blocking the macrocell output signal when the memory element is in a second state. This prevents coupling noise in the interconnect matrix because unnecessary feedback signals are prevented from entering the interconnect matrix. In another embodiment, a method is provided in which unused macrocells produce counteractive switching signals in the interconnect matrix to reduce the coupling effect caused by a multiple concurrent switching event. In another embodiment, a sense amplifier is provided in which an EPROM shields coupling between wordlines and bitlines in an interconnect matrix.
    • 在EPLD中,在连接在宏单元输出线和互连矩阵字线之间的反馈线上提供反馈开关电路,该开关电路包括用于将宏单元输出信号从输出线传递到互连矩阵的存储元件和开关 当存储元件处于第一状态时,并且当存储元件处于第二状态时阻止宏单元输出信号。 这防止互连矩阵中的耦合噪声,因为不必要的反馈信号被阻止进入互连矩阵。 在另一个实施例中,提供了一种方法,其中未使用的宏单元在互连矩阵中产生反向切换信号,以减少由多个并发切换事件引起的耦合效应。 在另一实施例中,提供一种读出放大器,其中EPROM屏蔽互连矩阵中的字线和位线之间的耦合。
    • 7. 发明授权
    • Macrocell architecture with high speed product terms
    • 宏单元架构具有高速产品术语
    • US5610536A
    • 1997-03-11
    • US533889
    • 1995-09-26
    • Sholeh DibaWei-Yi Ku
    • Sholeh DibaWei-Yi Ku
    • H03K19/177H03K17/00
    • H03K19/17732H03K19/17704
    • A programmable logic array, where the programmable AND gate array in each block of macrocells conventionally generates a number of product terms to drive the macrocells in that block. Five product terms are assigned to each macrocell and are logically NORed together with two adjacent macrocell signals. The resultant signal drives the D terminal of the flip-flop in the macrocell. Independently, all five product terms are logically NORed together and the resultant signal is provided as an export signal to an adjacent macrocell for an additional product term use. Thirdly, each one of the product terms can be individually set as a separate private product term for use internally in that macrocell to replace the otherwise global provisions of internal macrocell signals such as set, reset, clock, output enable and inversion.
    • 可编程逻辑阵列,其中宏单元的每个块中的可编程AND门阵列通常产生多个乘积项以驱动该块中的宏单元。 五个产品术语被分配给每个宏单元,并且与两个相邻的宏单元信号逻辑地NOR并联。 所得到的信号驱动宏单元中触发器的D端。 独立地,所有五个产品术语在逻辑上都是NORed在一起,并且所得到的信号作为输出信号被提供给相邻的宏单元以用于额外的产品术语使用。 第三,每个产品术语可以单独设置为在该宏单元内部使用的独立私有产品术语,以替代诸如设置,复位,时钟,输出使能和反转等内部宏单元信号的全局规定。
    • 9. 发明授权
    • Clock enable control circuit for flip flops
    • 触发器的时钟使能控制电路
    • US06466049B1
    • 2002-10-15
    • US09661923
    • 2000-09-14
    • Sholeh DibaWei-Yi KuJeffrey H. Seltzer
    • Sholeh DibaWei-Yi KuJeffrey H. Seltzer
    • G06F738
    • H03K19/1737
    • A clock enable control circuit for controlling flip flops on a programmable logic device. The clock enable control circuit either passes an original data signal to the input terminal of a flip flop, or feeds back an output signal from the output terminal to the input terminal of the flip flop in response to a clock enable control signal. The clock enable control signal is selected from one of a set control signal and a reset control signal that are otherwise provided on the programmable logic device to selectively control set and reset functions of the flip flop. In one embodiment, the set and reset control signals are generated as product-term signals that are programmably routed by a product-term allocator circuit to a macrocell including the flip flop and the clock enable control circuit.
    • 一种用于控制可编程逻辑器件上的触发器的时钟使能控制电路。 时钟使能控制电路或者将原始数据信号传递到触发器的输入端,或者响应于时钟使能控制信号将输出信号从输出端反馈到触发器的输入端。 时钟使能控制信号从另外设置在可编程逻辑器件上的设定控制信号和复位控制信号之一中选择,以选择性地控制触发器的置位和复位功能。 在一个实施例中,设置和复位控制信号被产生为可由产品术语分配器电路可编程地路由到包括触发器和时钟使能控制电路的宏单元的产品项信号。
    • 10. 发明授权
    • Two transistor flash EEprom cell and method of operating same
    • 两个晶体管闪光灯EEprom电池和操作方法相同
    • US5862082A
    • 1999-01-19
    • US62008
    • 1998-04-16
    • Anders T. DejenfeltDiane M. HoffstetterQi LinRobert A. OlahSholeh Diba
    • Anders T. DejenfeltDiane M. HoffstetterQi LinRobert A. OlahSholeh Diba
    • G11C16/04H01L27/115G11C13/00
    • H01L27/115G11C16/0433
    • A flash electrically erasable programmable read only memory (EEPROM) cell fabricated in a semiconductor substrate. A first well region having a first conductivity type is located in the semiconductor substrate. A second well region having a second conductivity type, opposite the first conductivity type, is located in the first well region. A non-volatile memory transistor and an independently controllable access transistor are fabricated in the second well region. The non-volatile memory transistor and the access transistor are connected in series, such that the source of the access transistor is coupled to the drain of the non-volatile memory transistor. The first well region, the second well region, the non-volatile memory transistor and the access transistor are biased such that electrons are transferred from the first well region to a floating gate of the non-volatile memory transistor by Fowler-Nordheim tunneling during an erase mode, and electrons are transferred from the floating gate of the non-volatile memory transistor through the access transistor by Fowler-Nordheim tunneling during a program mode. None of the biasing voltages exceed 12 Volts, thereby enabling the flash EEPROM cell to operate in a 3.3 Volt system. In one embodiment, an array of flash EEPROM cells are fabricated in the second well region.
    • 闪存电可擦除可编程只读存储器(EEPROM)单元,其制造在半导体衬底中。 具有第一导电类型的第一阱区位于半导体衬底中。 具有与第一导电类型相反的第二导电类型的第二阱区位于第一阱区中。 在第二阱区域中制造非易失性存储晶体管和可独立控制的存取晶体管。 非易失性存储晶体管和存取晶体管串联连接,使得存取晶体管的源极耦合到非易失性存储晶体管的漏极。 偏置第一阱区,第二阱区,非易失性存储晶体管和存取晶体管,使得电子通过Fowler-Nordheim隧道在第一阱区域转移到非易失性存储晶体管的浮置栅极 擦除模式,并且在编程模式期间,通过Fowler-Nordheim隧道,电子通过存取晶体管从非易失性存储晶体管的浮动栅极传送。 偏置电压都不超过12伏特,从而使闪存EEPROM单元能够工作在3.3伏特的系统中。 在一个实施例中,在第二阱区域中制造快闪EEPROM单元的阵列。