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1. 发明申请

US20090202952A1 SUBLITHOGRAPHIC PATTERNING METHOD INCORPORATING A SELF-ALIGNED SINGLE MASK PROCESS 有权
标题翻译：自动对准单掩模过程的分层方案
公开(公告)号：US20090202952A1
公开(公告)日：2009-08-13
申请号：US12028861
申请日：2008-02-11
申请人： David W. Abraham , Steven E. Steen , Nicholas C.M. Fuller , Francois Pagette
发明人： David W. Abraham , Steven E. Steen , Nicholas C.M. Fuller , Francois Pagette
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , H01L21/32139
摘要： A method of implementing sub-lithographic patterning of a semiconductor device includes forming a first set of patterned features with a single lithography step, the initial set of patterned features characterized by a linewidth and spacing therebetween; forming a first set of sidewall spacers on the first set of patterned features, and thereafter removing the first set of patterned features so as to define a second set of patterned features based on the geometry of the first set of sidewall spacers; and performing one or more additional iterations of forming subsequent sets of sidewall spacers on subsequent sets of patterned features, followed by removal of the subsequent sets of patterned features, wherein a given set of patterned features is based on the geometry of an associated set of sidewall spacers formed prior thereto, and wherein a final of the subsequent sets of patterned features is characterized by a sub-lithographic dimension.
摘要翻译：实现半导体器件的次光刻图案化的方法包括用单个光刻步骤形成第一组图案化特征，初始的图案化特征集合以其间的线宽和间距为特征; 在所述第一组图案化特征上形成第一组侧壁间隔物，然后移除所述第一组图案特征，以便基于所述第一组侧壁间隔物的几何形状限定第二组图案特征; 以及执行在随后的图案化特征集合上形成随后的一组侧壁间隔物的一个或多个附加迭代，随后移除随后的一组图案化特征，其中给定的一组图案化特征基于相关联的一组侧壁的几何形状间隔物在其之前形成，并且其中后续的一组图案化特征的最后的特征在于亚光刻尺寸。

2. 发明授权

US07960096B2 Sublithographic patterning method incorporating a self-aligned single mask process 有权
标题翻译：包括自对准单掩模工艺的亚光刻图案化方法
公开(公告)号：US07960096B2
公开(公告)日：2011-06-14
申请号：US12028861
申请日：2008-02-11
申请人： David W. Abraham , Steven E. Steen , Nicholas C. M. Fuller , Francois Pagette
发明人： David W. Abraham , Steven E. Steen , Nicholas C. M. Fuller , Francois Pagette
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , H01L21/32139
摘要： A method of implementing sub-lithographic patterning of a semiconductor device includes forming a first set of patterned features with a single lithography step, the initial set of patterned features characterized by a linewidth and spacing therebetween; forming a first set of sidewall spacers on the first set of patterned features, and thereafter removing the first set of patterned features so as to define a second set of patterned features based on the geometry of the first set of sidewall spacers; and performing one or more additional iterations of forming subsequent sets of sidewall spacers on subsequent sets of patterned features, followed by removal of the subsequent sets of patterned features, wherein a given set of patterned features is based on the geometry of an associated set of sidewall spacers formed prior thereto, and wherein a final of the subsequent sets of patterned features is characterized by a sub-lithographic dimension.
摘要翻译：实现半导体器件的次光刻图案化的方法包括用单个光刻步骤形成第一组图案化特征，初始的图案化特征集合以其间的线宽和间距为特征; 在所述第一组图案化特征上形成第一组侧壁间隔物，然后移除所述第一组图案特征，以便基于所述第一组侧壁间隔物的几何形状限定第二组图案特征; 以及执行在随后的图案化特征集合上形成随后的一组侧壁间隔物的一个或多个附加迭代，随后移除随后的一组图案化特征，其中给定的一组图案化特征基于相关联的一组侧壁的几何形状间隔物在其之前形成，并且其中后续的一组图案化特征的最后的特征在于亚光刻尺寸。

3. 发明授权

US08852762B2 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权
标题翻译：具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
公开(公告)号：US08852762B2
公开(公告)日：2014-10-07
申请号：US13562868
申请日：2012-07-31
申请人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
发明人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
IPC分类号： G11B5/66 , G11B5/65 , G11B5/64 , G11B5/667 , G11B5/673
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译：合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层第三钌层的厚度为约0埃至18埃。

4. 发明申请

US20120281467A1 MAGNONIC MAGNETIC RANDOM ACCESS MEMORY DEVICE 有权
公开(公告)号：US20120281467A1
公开(公告)日：2012-11-08
申请号：US13100032
申请日：2011-05-03
申请人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
发明人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1675
摘要： A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
摘要翻译：提供了双向写入的机制。结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。当磁化不稳定时，施加电压以改变自由层的磁化。电压的极性确定自由层的磁化何时平行并与参考层的磁化反平行。

5. 发明申请

US20120115251A1 PROCESS FOR SELECTIVELY PATTERNING A MAGNETIC FILM STRUCTURE 失效
标题翻译：用于选择性地绘制磁性膜结构的方法
公开(公告)号：US20120115251A1
公开(公告)日：2012-05-10
申请号：US13350174
申请日：2012-01-13
申请人： David W. Abraham , Solomon Assefa , Eugene J. O'Sullivan
发明人： David W. Abraham , Solomon Assefa , Eugene J. O'Sullivan
IPC分类号： H01L21/465
CPC分类号： H01L43/12
摘要： Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof, stopping on the tunnel barrier layer.
摘要翻译：用于选择性地图案化磁性膜结构的方法通常包括通过湿法选择性地蚀刻设置在隧道势垒层上的自由层的暴露部分，其包括将自由层暴露于包含至少一种酸和有机磷酸抑制剂或盐的蚀刻剂溶液在隧道势垒层上停止。

6. 发明授权

US07507633B2 Method and structure for improved alignment in MRAM integration 有权
标题翻译：改善MRAM集成对齐的方法和结构
公开(公告)号：US07507633B2
公开(公告)日：2009-03-24
申请号：US11369516
申请日：2006-03-07
申请人： Sivananda K. Kanakasabapathy , David W. Abraham
发明人： Sivananda K. Kanakasabapathy , David W. Abraham
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , H01L27/222 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for implementing alignment of a semiconductor device structure includes forming first and second sets of alignment marks within a lower level of the structure, the second set of alignment marks adjacent the first set of alignment marks. An opaque layer is formed over the lower level, including the first and second sets of alignment marks. A portion of the opaque layer corresponding to the location of said first set of alignment marks is opened so as to render the first set optically visible while the second set of alignment marks initially remains covered by the opaque layer. The opaque layer is patterned using the optically visible first set of alignment marks, wherein the second set of alignment marks remain available for subsequent alignment operations in the event the first set becomes damaged during patterning of the opaque layer.
摘要翻译：用于实现半导体器件结构的对准的方法包括在该结构的较低级别内形成第一组和第二组对准标记，第二组对准标记与第一组对准标记相邻。在较低层上形成不透明层，包括第一组和第二组对准标记。对应于所述第一组对准标记的位置的不透明层的一部分被打开，以使第一组光学可见，而第二组对准标记最初保持被不透明层覆盖。使用光学可见的第一组对准标记图案化不透明层，其中在第一组在不透明层的图案化期间第一组变得损坏的情况下，第二组对准标记保持可用于随后的对准操作。

7. 发明授权

US06724674B2 Memory storage device with heating element 有权
标题翻译：带加热元件的存储器
公开(公告)号：US06724674B2
公开(公告)日：2004-04-20
申请号：US10128838
申请日：2002-04-23
申请人： David W. Abraham , Philip L. Trouilloud
发明人： David W. Abraham , Philip L. Trouilloud
IPC分类号： G11C704
CPC分类号： H01L27/222 , G11C7/04 , G11C11/16 , G11C11/1675 , H01L43/10
摘要： A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
摘要翻译：提供一种包括具有可变磁区的存储单元的存储器存储装置。可变磁性区域包括具有响应于温度变化的磁化状态的材料。存储器存储装置还包括加热元件。加热元件靠近存储单元，用于选择性地改变存储单元的可变磁区的温度。通过加热元件加热存储单元，与通过直接施加电流来加热存储单元不同，在存储单元的制造中提供了更多的灵活性。

8. 发明授权

US06527856B2 Method for changing surface termination of a perovskite oxide substrate surface 失效
公开(公告)号：US06527856B2
公开(公告)日：2003-03-04
申请号：US09792040
申请日：2001-02-22
申请人： David W. Abraham , Matthew Copel , James Misewich , Alejandro G. Schrott , Ying Zhang
发明人： David W. Abraham , Matthew Copel , James Misewich , Alejandro G. Schrott , Ying Zhang
IPC分类号： C30B2502
CPC分类号： C30B33/00 , C30B29/22 , C30B29/225 , C30B33/12 , H01L21/02197 , H01L21/02359 , H01L21/31691 , H01L39/2458
摘要： A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i.e., the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i.e., SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels. A-site terminated surfaces produced by this invention allow for the epitaxial growth of heterostructures, such as cuprate films for use as high-Tc superconductor films, Josephson tunnel junctions, superlattices and OxFET, with improved quality.

9. 发明授权

US08852677B2 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权
标题翻译：具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
公开(公告)号：US08852677B2
公开(公告)日：2014-10-07
申请号：US13566132
申请日：2012-08-03
申请人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
发明人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
IPC分类号： B32B15/04 , B05D5/12 , B05D5/00 , B32B15/00
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译：一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。

10. 发明申请

US20140038310A1 MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS 审中-公开
公开(公告)号：US20140038310A1
公开(公告)日：2014-02-06
申请号：US13566137
申请日：2012-08-03
申请人： David W. Abraham
发明人： David W. Abraham
IPC分类号： H01L43/10
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12
摘要： A synthetic antiferromagnetic device includes a reference layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer, and a first ruthenium layer disposed on cobalt iron boron layer, the first ruthenium layer having a thickness of approximately 0 Å to 32 Å.

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