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    • 6. 发明授权
    • Substrate structure and manufacturing method
    • 基板结构及制造方法
    • US08224143B2
    • 2012-07-17
    • US12713184
    • 2010-02-26
    • Shin MasudaKazunori ShiotaAtsushi Seki
    • Shin MasudaKazunori ShiotaAtsushi Seki
    • G02B6/10B32B9/04B05D5/06H01L21/00
    • G02F1/0018G02F1/0316G02F1/035G02F2001/212Y10T428/325
    • Provided is a substrate structure and a manufacturing method thereof, the substrate structure including a base substrate of single crystal; and a rhombohedral ferroelectric thin film exhibiting a spontaneous ferroelectric polarization and of a perovskite structure, the ferroelectric thin film being formed on a surface of the base substrate. The substrate structure may further include an optical waveguide formed on the ferroelectric thin film; and an electric field applying section that applies, to the optical waveguide, an electric field parallel to a surface of the base substrate. The electric field applying section generates the electric field so that the electric field direction of the electric field applied to the optical waveguide is parallel to a direction of the spontaneous ferroelectric polarization of the ferroelectric thin film.
    • 提供一种基板结构及其制造方法,该基板结构包括单晶基底; 以及表现出自发铁电极化和钙钛矿结构的菱形铁电薄膜,所述铁电薄膜形成在所述基底基板的表面上。 基板结构还可以包括形成在铁电薄膜上的光波导; 以及电场施加部,其向光波导施加平行于基底的表面的电场。 电场施加部产生电场,使得施加到光波导的电场的电场方向平行于铁电薄膜的自发铁电极化方向。
    • 10. 发明申请
    • PROCESS FOR FABRICATING A LAYER OF AN ANTIFERROMAGNETIC MATERIAL WITH CONTROLLED MAGNETIC STRUCTURES
    • 用控制磁性结构制备抗病毒材料层的方法
    • US20110236704A1
    • 2011-09-29
    • US13128721
    • 2009-10-13
    • Antoine BarbierOdile BezencenetDaniel Bonamy
    • Antoine BarbierOdile BezencenetDaniel Bonamy
    • H01F10/00B05D3/00B32B9/00
    • H01F41/32B82Y25/00B82Y40/00H01F10/002H01F41/14H01F41/302H01F41/303Y10T428/325
    • A process for fabricating an antiferromagnetic layer includes depositing on a substrate a first layer with a sufficient thickness to establish a specific magnetic order from among one of the following orders, ferrimagnetic, ferromagnetic, paramagnetic, diamagnetic; after establishing the ferrimagnetic, ferromagnetic, paramagnetic or diamagnetic order, applying a magnetic field with sufficient amplitude and duration to shift walls of the magnetic domains of the first layer from a first statistical distribution to a second statistical distribution, the second statistical distribution presenting a minimum magnetic domain size strictly greater than the minimum magnetic domain size of the first statistical distribution and; for a given area, magnetic domains in which the perimeter is greater than that of domains from the first statistical distribution; and depositing on the first layer whose magnetic domain walls have been shifted, a second layer of an antiferromagnetic material in which at least one of the components of material of the first layer may be integrated by diffusion during growth.
    • 制造反铁磁性层的方法包括在基底上沉积足够厚度的第一层,以从以下顺序之一建立特定磁性顺序,亚铁磁性,铁磁性,顺磁性,抗磁性; 在建立铁磁性,铁磁性,顺磁性或抗磁性顺序之后,施加足够的幅度和持续时间的磁场将第一层的磁畴的壁从第一统计分布转移到第二统计分布,第二统计分布呈现最小值 磁畴尺寸严格大于最小磁畴尺寸的第一次统计分布; 对于给定区域,其周长大于来自第一统计分布的域的磁畴; 并且沉积在其磁畴壁已经移动的第一层上,第二层反铁磁性材料,其中第一层的材料的至少一种成分可通过生长期间的扩散而被整合。