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1. 发明申请

US20120281467A1 MAGNONIC MAGNETIC RANDOM ACCESS MEMORY DEVICE 有权
公开(公告)号：US20120281467A1
公开(公告)日：2012-11-08
申请号：US13100032
申请日：2011-05-03
申请人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
发明人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1675
摘要： A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
摘要翻译：提供了双向写入的机制。结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。当磁化不稳定时，施加电压以改变自由层的磁化。电压的极性确定自由层的磁化何时平行并与参考层的磁化反平行。

2. 发明授权

US08456895B2 Magnonic magnetic random access memory device 有权
标题翻译：磁性磁性随机存取存储器件
公开(公告)号：US08456895B2
公开(公告)日：2013-06-04
申请号：US13100032
申请日：2011-05-03
申请人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
发明人： David W. Abraham , Niladri N. Mojumder , Daniel C. Worledge
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/161 , G11C11/1675
摘要： A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
摘要翻译：提供了双向写入的机制。结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。当磁化不稳定时，施加电压以改变自由层的磁化。电压的极性确定自由层的磁化何时平行并与参考层的磁化反平行。

3. 发明申请

US20140038309A1 MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权
标题翻译：具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器
公开(公告)号：US20140038309A1
公开(公告)日：2014-02-06
申请号：US13566132
申请日：2012-08-03
申请人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
发明人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
IPC分类号： H01L43/10
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译：一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。

4. 发明申请

US20140037990A1 MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权
标题翻译：具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器
公开(公告)号：US20140037990A1
公开(公告)日：2014-02-06
申请号：US13562868
申请日：2012-07-31
申请人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
发明人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
IPC分类号： G11B5/66
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译：合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层第三钌层的厚度为约0埃至18埃。

5. 发明授权

US08852762B2 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权
标题翻译：具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
公开(公告)号：US08852762B2
公开(公告)日：2014-10-07
申请号：US13562868
申请日：2012-07-31
申请人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
发明人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
IPC分类号： G11B5/66 , G11B5/65 , G11B5/64 , G11B5/667 , G11B5/673
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译：合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层第三钌层的厚度为约0埃至18埃。

6. 发明授权

US08852677B2 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权
标题翻译：具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
公开(公告)号：US08852677B2
公开(公告)日：2014-10-07
申请号：US13566132
申请日：2012-08-03
申请人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
发明人： David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
IPC分类号： B32B15/04 , B05D5/12 , B05D5/00 , B32B15/00
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译：一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。

7. 发明授权

US08866207B2 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory 有权
标题翻译：具有垂直磁各向异性的磁性堆叠，用于自旋动量传递磁阻随机存取存储器
公开(公告)号：US08866207B2
公开(公告)日：2014-10-21
申请号：US13602533
申请日：2012-09-04
申请人： Guohan Hu , Janusz J. Nowak , Philip L. Trouilloud , Daniel C. Worledge
发明人： Guohan Hu , Janusz J. Nowak , Philip L. Trouilloud , Daniel C. Worledge
IPC分类号： G11B5/39 , H01L43/08 , G11C11/16 , H01L43/10 , H01L43/12
CPC分类号： G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
摘要翻译：磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 位于邻近自由层的绝缘隧道屏障; 具有不变磁化方向的磁性固定层，所述固定层邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间，其中所述自由层和所述固定层具有垂直的磁各向异性; 以及复合固定层中的一个或多个，所述复合固定层包括除尘层，间隔层和参考层; 合成反铁磁（SAF）固定层结构，SAF固定层结构包括位于固定层和第二固定磁性层之间的SAF间隔物; 和偶极子层，其中自由层位于偶极层和隧道势垒之间。

8. 发明授权

US08370714B2 Reference cells for spin torque based memory device 失效
标题翻译：用于基于旋转扭矩的存储器件的参考单元
公开(公告)号：US08370714B2
公开(公告)日：2013-02-05
申请号：US12684486
申请日：2010-01-08
申请人： John K. DeBrosse , Daniel C. Worledge
发明人： John K. DeBrosse , Daniel C. Worledge
IPC分类号： G11C29/00 , G11C11/00
CPC分类号： G06F11/1048 , H03M13/13
摘要： A method of reading and correcting data within a memory device that includes reading each data bit of a data word using a plurality of reference cells corresponding to each data bit, performing error detection on the read data bits, and correcting a read data bit when an error is detected using error correction code (ECC) and writing each corresponding reference cells to an original memory state thereof.
摘要翻译：一种在存储器件内读取和校正数据的方法，包括使用与每个数据位对应的多个参考单元读取数据字的每个数据位，对读取的数据位进行错误检测，以及当读取的数据位在使用纠错码（ECC）检测错误，并将每个对应的参考单元写入其原始存储器状态。

9. 发明授权

US08324697B2 Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory 有权
标题翻译：种子层和自由磁性层用于垂直各向异性在自旋扭矩磁随机存取存储器中
公开(公告)号：US08324697B2
公开(公告)日：2012-12-04
申请号：US12815923
申请日：2010-06-15
申请人： Daniel C. Worledge
发明人： Daniel C. Worledge
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/30 , H01F10/3286 , H01F10/3295 , H01L43/10
摘要： A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.
摘要翻译：一种磁性层，其包括至少包含钽的种子层和至少包含铁的自由磁性层。自由磁性层生长在种子层的顶部，自由磁性层被垂直磁化。磁性层可以包括在磁性隧道结（MTJ）堆叠中。

10. 发明授权

US07907440B2 Data writing to scalable magnetic memory devices 失效
标题翻译：数据写入可扩展磁存储器件
公开(公告)号：US07907440B2
公开(公告)日：2011-03-15
申请号：US12119345
申请日：2008-05-12
申请人： Daniel C. Worledge
发明人： Daniel C. Worledge
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method is provided for writing data to an MRAM device having a plurality of magnetic memory cells configured in an array between a plurality of word lines and bit lines. At least one of the magnetic memory cells includes at least one fixed magnetic layer and a plurality of free magnetic layers, separated from the fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one first parallel coupling layer, and a third free magnetic layer separated from the second free magnetic layer by at least one second parallel coupling layer. A magnetic moment of the second free magnetic layer is greater than both a magnetic moment of the first free magnetic layer and the third free magnetic layer.
摘要翻译：提供了一种用于将数据写入具有以多个字线和位线之间的阵列配置的多个磁存储单元的MRAM装置的方法。至少一个磁存储单元包括至少一个固定磁性层和多个自由磁性层，它们通过至少一个阻挡层与固定磁性层分离。自由磁性层包括与阻挡层相邻的第一自由磁性层，通过至少一个第一平行耦合层与第一自由磁性层分离的第二自由磁性层和与第二自由磁性层分离的第三自由磁性层通过至少一个第二平行耦合层。第二自由磁性层的磁矩大于第一自由磁性层和第三自由磁性层的磁矩。

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