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1. 发明申请

US20120210931A1 METHODS FOR CONTROLLING MELT TEMPERATURE IN A CZOCHRALSKI GROWER 审中-公开
标题翻译：用于控制CZOCHRALSKI GROWER中的熔融温度的方法
公开(公告)号：US20120210931A1
公开(公告)日：2012-08-23
申请号：US13315769
申请日：2011-12-09
申请人： David L. Bender , Gary Janik , David E.A. Smith
发明人： David L. Bender , Gary Janik , David E.A. Smith
IPC分类号： C30B15/20 , C30B15/14 , C30B15/02
CPC分类号： C30B29/06 , C30B15/02 , C30B15/14 , C30B15/20 , Y10T117/1008
摘要： In a Czochralski process for growing single crystal silicon ingots, a system is provided for adding solid material to the liquid silicon during crystal growth for the purpose of directly controlling the latent heat of fusion with respect to a crystal melt interface. In contrast to the standard method for controlling power to the crucible heater, the present system has been found to be much more effective for controlling melt temperature in the crucible, especially in heavily insulated systems. The system provides the advantage of reducing the electric power required to operate a Czochralski grower, while increasing the speed with which the melt temperature can be raised or lowered in a controlled manner.
摘要翻译：在用于生长单晶硅锭的切克劳斯（Czochralski）工艺中，提供了一种用于在晶体生长期间将固体材料添加到液态硅的系统，用于直接控制熔融相对于晶体熔融界面的潜热。与用于控制坩埚加热器的功率的标准方法相比，本系统已经被发现对于控制坩埚中的熔融温度更有效，特别是在高度绝缘的系统中。该系统提供了降低操作切克劳斯基斯种植者所需的电力的优点，同时提高以可控方式升高或降低熔体温度的速度。

2. 发明申请

US20130263772A1 Method and apparatus for controlling melt temperature in a Czochralski grower 审中-公开
标题翻译：用于控制切克劳斯基种植者熔融温度的方法和装置
公开(公告)号：US20130263772A1
公开(公告)日：2013-10-10
申请号：US12315681
申请日：2008-12-04
申请人： David L. Bender , Gary Janik , David E.A. Smith
发明人： David L. Bender , Gary Janik , David E.A. Smith
IPC分类号： C30B15/10
CPC分类号： C30B29/06 , C30B15/02 , C30B15/14 , C30B15/20 , Y10T117/1008
摘要： In a Czochralski process for growing single crystal silicon ingots, a system is provided for adding solid material to the liquid silicon during crystal growth for the purpose of directly controlling the latent heat of fusion with respect to a crystal melt interface. In contrast to the standard method for controlling power to the crucible heaters, the present system has been found to be much more effective for controlling melt temperature in the crucible, especially in heavily insulated systems. The system provides the advantages of reducing the electric power required to operate a Czochralski grower, while increasing the speed with which the melt temperature can be raised or lowered in a controlled manner.
摘要翻译：在用于生长单晶硅锭的切克劳斯（Czochralski）工艺中，提供了一种用于在晶体生长期间将固体材料添加到液态硅的系统，用于直接控制熔融相对于晶体熔融界面的潜热。与用于控制坩埚加热器的功率的标准方法相反，已经发现本系统对于控制坩埚中的熔融温度更有效，特别是在高度绝缘的系统中。该系统提供了降低操作切克劳斯基种植者所需的电力的优点，同时提高了以可控方式升高或降低熔体温度的速度。

3. 发明授权

US08257496B1 Crucible weight measurement system for controlling feedstock introduction in Czochralski crystal growth 有权
标题翻译：用于控制Czochralski晶体生长中原料引入的坩埚重量测量系统
公开(公告)号：US08257496B1
公开(公告)日：2012-09-04
申请号：US12315452
申请日：2008-12-03
申请人： David L. Bender , Gary Janik , Roy P. Crawford , David E. A. Smith
发明人： David L. Bender , Gary Janik , Roy P. Crawford , David E. A. Smith
IPC分类号： C30B35/00
CPC分类号： C30B15/02 , C30B15/28 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1056
摘要： A weighing system is provided for a continuous Czochralski process that accurately measures the weight of the crucible and melt during crystal growth to control the introduction of feedstock in order to keep the weight approximately constant. The system can measure the weight of the crucible while the crucible is rotating, and is insensitive to vibrations of the melt surface as well as variable torques on the crucible shaft induced by the rotation. The system also measures the weight of the crucible and its contents in order to control the amount of feedstock recharged after an ingot is withdrawn.
摘要翻译：为连续的切克劳斯基（Czochralski）工艺提供了称重系统，可精确测量坩埚的重量，并在晶体生长过程中熔化，以控制原料的引入，以保持重量大致恒定。该系统可以在坩埚旋转时测量坩埚的重量，并且对熔体表面的振动以及由旋转引起的坩埚轴上的可变转矩不敏感。该系统还测量坩埚的重量及其含量，以便控制在锭被取出之后再充电的原料的量。

4. 发明授权

US08262797B1 Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process 有权
标题翻译：堰设计提供了最佳吹扫气流，熔体控制和温度稳定，以改善连续切克劳斯基工艺中的单晶生长
公开(公告)号：US08262797B1
公开(公告)日：2012-09-11
申请号：US12075513
申请日：2008-03-11
申请人： David L. Bender , David E. A. Smith
发明人： David L. Bender , David E. A. Smith
IPC分类号： C30B21/02
CPC分类号： C30B15/002 , C30B15/12 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A weir is extended vertically to define an optimal annular gap between the top of the weir and the underside of a super-adjacent heat shield. The annular gap provides a high velocity stream of argon gas to be directed from the growth region to the melt region to substantially eliminate the transport of airborne particles from the melt region to the growth region. The tall weir may be configured as a modular, reusable weir extension supportably engaged with an outer (and/or inner) weir.
摘要翻译：堰垂直延伸以限定堰顶部与超临界隔热罩下侧之间的最佳环形间隙。环形间隙提供从生长区域引导到熔融区域的高速氩气流，以基本上消除空气传播的颗粒从熔融区域运输到生长区域。高堰可以被配置为与外部（和/或内部）堰支撑地配合的模块化的可重复使用的堰延伸。

5. 发明授权

US5279784A Method of fabrication of composite tire thread 失效
标题翻译：复合轮胎线的制造方法
公开(公告)号：US5279784A
公开(公告)日：1994-01-18
申请号：US878480
申请日：1992-05-05
申请人： David L. Bender , William H. Brugman , Floyd S. Myers
发明人： David L. Bender , William H. Brugman , Floyd S. Myers
IPC分类号： B29C39/10 , B29D30/52 , B29C45/14
CPC分类号： B29D30/52 , B29C39/10
摘要： Method for forming a composite elastomer tire tread by applying a heat curable liquid elastomer mixture to a thin rubber sheet and curing the liquid mixture to form the composite tire tread. A tire retreaded with such a composite tire elastomer tread is also described.
摘要翻译：通过将热可固化液体弹性体混合物施加到薄橡胶片上并固化液体混合物以形成复合轮胎胎面来形成复合弹性体轮胎胎面的方法。还描述了用这种复合轮胎弹性体胎面翻新的轮胎。

6. 发明申请

US20130233237A1 WEIR METHOD FOR IMPROVED SINGLE CRYSTAL GROWTH IN A CONTINUOUS CZOCHRALSKI PROCESS 有权
标题翻译：在连续的CZOCHRALSKI工艺中改进单晶生长的WEIR方法
公开(公告)号：US20130233237A1
公开(公告)日：2013-09-12
申请号：US13604277
申请日：2012-09-05
申请人： David L. Bender , David E. A. Smith
发明人： David L. Bender , David E. A. Smith
IPC分类号： C30B15/00 , C30B15/12
CPC分类号： C30B15/002 , C30B15/12 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.
摘要翻译：公开了一种用于连续CZ晶体生长的方法，其中将一个或多个晶锭从含有由结晶原料连续补充的熔融结晶材料的坩埚中限定的晶体/熔融界面拉入生长室。该方法包括分离熔融结晶材料，控制熔融结晶材料的流动并且相对于腔室中的隔热罩的侧壁限定环形空间。

7. 发明授权

US4552289A Tundish for ribbon casting of semiconductor ribbon 失效
标题翻译：中间包用于丝带铸造半导体带
公开(公告)号：US4552289A
公开(公告)日：1985-11-12
申请号：US147804
申请日：1980-05-08
申请人： G. Felix Wakefield , David L. Bender
发明人： G. Felix Wakefield , David L. Bender
IPC分类号： B22D11/06 , B22D11/10
CPC分类号： B22D11/064 , B22D11/10
摘要： A tundish for use in casting a ribbon of crystalline or coarse grain polycrystalline material, having a support for a hopper containing molten material, the hopper having a bottom plate and three side wall plates and a top plate, each made of a material which will not interact with the molten material contained within the space defined by the bottom plate, side wall plates and top plate, to impart any significant impurity into the molten material, and wherein the top plate slants downwardly towards the bottom plate to form an elongated orifice through which molten material is extruded onto a cool surface where crystallization of a ribbon of material occurs. As disclosed, the top plate is movable with respect to the bottom plate to change the thickness of the orifice. Also as disclosed, the top plate slides in a slot in each of two opposed side walls and is of a length such that it forms with the third side wall an opening into which molten material is added to the tundish.
摘要翻译：用于铸造结晶或粗晶多晶材料带的中间包，具有用于含有熔融材料的料斗的支撑件，料斗具有底板和三个侧壁板和顶板，每个由不会与包含在由底板，侧壁板和顶板限定的空间内的熔融材料相互作用，以将任何显着的杂质施加到熔融材料中，并且其中顶板向下朝向底板倾斜以形成细长的孔，通过该孔熔融材料被挤压到冷却表面上，其中发生材料带的结晶。如所公开的，顶板可相对于底板移动以改变孔口的厚度。同样如所公开的，顶板在两个相对的侧壁中的每一个中的槽中滑动，并且具有这样的长度，使得其与第三侧壁形成有熔融材料添加到中间包的开口。

8. 发明申请

US20100162946A1 System for continuous growing of monocrystalline silicon 审中-公开
标题翻译：用于连续生长单晶硅的系统
公开(公告)号：US20100162946A1
公开(公告)日：2010-07-01
申请号：US12653910
申请日：2009-12-17
申请人： David L. Bender
发明人： David L. Bender
IPC分类号： C30B15/14 , C30B15/10
CPC分类号： C30B15/12 , C30B15/002 , C30B15/02 , C30B15/04 , C30B15/10 , C30B15/14 , C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.
摘要翻译：基于用于连续生长单晶锭的切克劳斯基方法的改进的系统包括低纵横比，大直径和基本平坦的坩埚，包括围绕晶体的可选堰。低长宽比坩埚基本上消除了对流，并降低了成品单晶硅锭中的氧含量。单独的水平控制的硅预熔化室向生长坩埚提供连续的熔融硅源，有利地消除了在晶体拉制过程中垂直行进和坩埚升高系统的需要。坩埚下面的多个加热器在熔体上建立相应的热区。加热器的热输出被单独控制，以提供跨熔体和晶体/熔融界面的最佳热分布，以改善晶体生长。提供多个晶体拉伸室用于连续处理和高通量。

9. 发明授权

US07635414B2 System for continuous growing of monocrystalline silicon 有权
标题翻译：用于连续生长单晶硅的系统
公开(公告)号：US07635414B2
公开(公告)日：2009-12-22
申请号：US10789638
申请日：2004-02-27
申请人： David L. Bender
发明人： David L. Bender
IPC分类号： C30B21/06 , C30B11/00 , C30B28/08
CPC分类号： C30B15/12 , C30B15/002 , C30B15/02 , C30B15/04 , C30B15/10 , C30B15/14 , C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.
摘要翻译：基于用于连续生长单晶锭的切克劳斯基方法的改进的系统包括低纵横比，大直径和基本平坦的坩埚，包括围绕晶体的可选堰。低长宽比坩埚基本上消除了对流，并降低了成品单晶硅锭中的氧含量。单独的水平控制的硅预熔化室向生长坩埚提供连续的熔融硅源，有利地消除了在晶体拉制过程中垂直行进和坩埚升高系统的需要。坩埚下面的多个加热器在熔体上建立相应的热区。加热器的热输出被单独控制，以提供跨熔体和晶体/熔融界面的最佳热分布，以改善晶体生长。提供多个晶体拉伸室用于连续处理和高通量。

10. 发明授权

US5462617A Tire bonding systems 失效
标题翻译：轮胎粘合系统
公开(公告)号：US5462617A
公开(公告)日：1995-10-31
申请号：US248526
申请日：1994-05-24
申请人： David L. Bender , William C. Bryan , William Brugman , Laurence Carlson , Charles E. Fox
发明人： David L. Bender , William C. Bryan , William Brugman , Laurence Carlson , Charles E. Fox
IPC分类号： B29D30/54 , C08G18/10 , C08J5/12 , C08J7/12 , C09J175/04 , B29D30/56
CPC分类号： C08J7/126 , B29D30/54 , C08G18/10 , C08J5/124 , C09J175/04 , B29D2030/0011 , B29D2030/544 , C08G2380/00 , C08J2321/00
摘要： A method and adhesive system for bonding at least two elastomeric substrates together. The method comprises subjecting the substrates to a priming treatment followed by applying to the primed substrates a heat-curable polyurethane adhesive composition comprising an isocyanate-terminated prepolymer and a polyhydroxide compound. The surfaces of the substrates so treated are contacted and subjected to heat-curing to bond the substrates together.
摘要翻译：用于将至少两个弹性体基底粘合在一起的方法和粘合剂系统。该方法包括对基材进行预涂处理，然后将涂有底漆的基材涂覆在包含异氰酸酯封端的预聚物和多羟基化合物的热固性聚氨酯粘合剂组合物上。将如此处理的基板的表面接触并进行热固化以将基板粘合在一起。

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