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    • 1. 发明授权
    • Memory system reset circuit
    • 存储器系统复位电路
    • US5604755A
    • 1997-02-18
    • US565627
    • 1995-11-20
    • Claude L. BertinCharles E. DrakeJohn A. FifieldErik Hedberg
    • Claude L. BertinCharles E. DrakeJohn A. FifieldErik Hedberg
    • G06F11/00G06F11/07G06F11/10G11C5/00
    • G06F11/1024G06F11/073G06F11/0793G11C5/005G06F11/0796
    • A reset circuit for resetting a memory system following a radiation event includes an error detect circuit for producing an error signal in response to detection of an uncorrectable error in the systems memory arrays, and includes a control circuit for selectively resetting at least select portions of the memory system in response to the error detect signal. All or portions of the memory arrays can be reset by the control circuit, and complete or selective latch reset, or selective power recycling are provided. In one embodiment, the control circuit provides latch reset in response to the error detect signal so as to reset the memory latches without recycling power, and in another embodiment, the control circuit selectively cycles power to independent memory zones of the system to reset only those zones whose memory array is identified as having an uncorrectable error. Preferably, the control circuit, and perhaps the detect circuit, are radiation hardened to further ensure dependable operation of the reset circuit following a radiation event.
    • 用于在辐射事件之后复位存储器系统的复位电路包括:误差检测电路,用于响应于系统存储器阵列中的不可校正误差的检测而产生误差信号,并且包括控制电路,用于至少选择性地复位 存储器系统响应于错误检测信号。 存储器阵列的全部或部分可由控制电路复位,并提供完整的或选择性的锁存复位或选择性的电力回收。 在一个实施例中,控制电路响应于错误检测信号提供锁存器复位,以便在不再循环功率的情况下复位存储器锁存器,并且在另一实施例中,控制电路选择性地将电力循环到系统的独立存储器区域,以仅复位那些 存储器阵列被识别为具有不可校正错误的区域。 优选地,控制电路以及可能的检测电路被辐射硬化,以进一步确保在辐射事件之后复位电路的可靠操作。
    • 2. 发明授权
    • Programmable latch device with integrated programmable element
    • 具有集成可编程元件的可编程锁存器件
    • US06420925B1
    • 2002-07-16
    • US09757267
    • 2001-01-09
    • John A. FifieldErik L. HedbergClaude L. BertinNicholas M. van Heel
    • John A. FifieldErik L. HedbergClaude L. BertinNicholas M. van Heel
    • H01H3776
    • H03K3/356008G11C17/18
    • According to the present invention, a programable latch device for use in personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment programmable latch device can use both fuses and antifuses as programmable elements. The programmable latch device provides a solid digital output indicative of the state of the programmable device, and can be reliably read to provide customization and personalization of associated semiconductor devices. The preferred embodiment programable latch device includes an integrated fuse or antifuse as a programmable element in the latch device. By integrating the programmable element into the latch, device size and complexity is minimized. In particular, the number of transistors required drops considerably when compared to prior art approaches.
    • 根据本发明,提供了用于个性化半导体器件的可编程锁存器件,其克服了现有技术的限制。 优选实施例可编程锁存器件可以使用熔丝和反熔丝作为可编程元件。 可编程锁存器件提供指示可编程器件状态的实心数字输出,并且可被可靠地读取以提供相关半导体器件的定制和个性化。 优选实施例可编程锁存装置包括作为锁存装置中的可编程元件的集成熔丝或反熔丝。 通过将可编程元件集成到锁存器中,器件尺寸和复杂度最小化。 特别地,与现有技术方法相比,所需的晶体管的数量显着下降。
    • 7. 发明授权
    • Antifuse latch device with controlled current programming and variable trip point
    • 具有受控电流编程和可变跳变点的防漏锁存器件
    • US06384666B1
    • 2002-05-07
    • US09816030
    • 2001-03-23
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonNicholas M. van Heel
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonNicholas M. van Heel
    • H01H3776
    • G11C17/18
    • A latch device is provided having a variable resistive trip point and controlled current programming. The latch device has a trip point current control element that controls an amount of current passing from a voltage source into the latch circuit, thereby varying the resistive trip point of the latch device. The latch device also has a programming current control element that controls an amount of programming current passing through the fuse element during programming. The trip point current reference and a programming current reference are provided by reference circuits having a plurality of selectable inputs that operate to change the current references binarily. An integrated circuit is also provided in which a plurality of the fuse latch devices are connected together in parallel such that the same trip point current reference and programming current reference are supplied to each latch device.
    • 提供具有可变电阻跳变点和受控电流编程的锁存器件。 闩锁装置具有跳闸电流控制元件,其控制从电压源流入锁存电路的电流量,从而改变闩锁装置的电阻性跳变点。 闩锁装置还具有编程电流控制元件,其控制在编程期间通过熔丝元件的编程电流量。 跳变点电流基准和编程电流基准由具有多个可选择输入的参考电路提供,所述多个可选输入用于二次改变当前基准。 还提供一种集成电路,其中多个熔丝锁存器件并联连接在一起,使得相同的跳变点电流参考和编程电流基准被提供给每个锁存器件。
    • 8. 发明授权
    • Module with low leakage driver circuits and method of operation
    • 具有低泄漏驱动电路的模块和操作方法
    • US06268748B1
    • 2001-07-31
    • US09073517
    • 1998-05-06
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonChristopher P. MillerWilliam R. Tonti
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonChristopher P. MillerWilliam R. Tonti
    • G03K19094
    • G11C7/1069G11C7/1051H03K19/0016H03K19/09429
    • An electronic semiconductor module, either memory or logic, having a driver circuit which includes a multiplicity of driver transistors, together with circuitry for simultaneously applying a first positive bias to a first select number of driver transistors to activate them to an operational state, a second positive bias to a second select number of driver transistors to place them in readiness for activation, and a negative bias to the remaining driver transistors to place them in a fully inactive state thereby reducing noise in the driver circuit. The first positive bias is greater than the transistor threshold voltage, preferably greater than two volts, the second positive bias is less than the threshold voltage, preferably less than one volt, and the negative bias is in the order of minus 0.3 volt. A method of reducing noise in the electronic semiconductor module is also described and includes the applying of a positive bias to a first select number of the transistors to activate them while simultaneously applying a second positive bias to a second select number of the transistors to ready them for activation, and a negative voltage to the remaining transistors to place each in a inactive condition.
    • 一种电子半导体模块,无论是存储器还是逻辑,具有包括多个驱动器晶体管的驱动器电路,以及用于同时向第一选择数量的驱动器晶体管施加第一正偏置以将其激活到操作状态的电路,第二 对第二选择数量的驱动器晶体管施加正偏置以使它们准备激活,以及对其余驱动器晶体管的负偏置以将它们置于完全无效状态,从而降低驱动器电路中的噪声。 第一正偏压大于晶体管阈值电压,优选大于2伏,第二正偏压小于阈值电压,优选小于1伏特,负偏压为零下0.3伏。 还描述了降低电子半导体模块中的噪声的方法,并且包括将正偏压施加到第一选择数量的晶体管以激活它们,同时向第二选择数量的晶体管施加第二正偏置以准备它们 用于激活,并且向剩余晶体管施加负电压以使其处于非活动状态。
    • 10. 发明授权
    • Methods and apparatus for blowing and sensing antifuses
    • 用于吹制和检测反熔丝的方法和装置
    • US06346846B1
    • 2002-02-12
    • US09466479
    • 1999-12-17
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonWilliam R. TontiNicholas M. Van Heel
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonWilliam R. TontiNicholas M. Van Heel
    • H01H3776
    • G11C5/145G11C17/18
    • Methods and apparatus for blowing and sensing antifuses are provided. Specifically, in a first aspect, a method is provided for changing the state of one of a plurality of antifuses by selecting one of the bank of antifuses and applying a high voltage to change the state of the selected antifuse. In second and third aspects, apparatus are provided for performing the method of the first aspect. In a fourth aspect, a method is provided for boosting a voltage that includes the steps of generating a first voltage within a first stage storage mechanism of a first stage voltage booster circuit, generating a second voltage equaling about twice the first voltage within a first and a second, second stage storage mechanism of a second stage voltage booster circuit, and generating about thrice the first voltage based on the second voltage of the second stage voltage booster circuit. In a fifth aspect, apparatus are provided for performing the method of the fourth aspect.
    • 提供了用于吹制和检测反熔丝的方法和装置。 具体地,在第一方面中,提供一种通过选择一组反熔丝中的一个并且施加高电压来改变所选择的反熔丝的状态来改变多个反熔丝之一的状态的方法。 在第二和第三方面中,提供了用于执行第一方面的方法的装置。 在第四方面,提供了一种用于升压电压的方法,包括以下步骤:在第一级升压电路的第一级存储机构内产生第一电压,产生等于第一级升压电路中第一电压的大约两倍的第二电压, 第二级升压电路的第二级第二级存储机构,并且基于第二级升压电路的第二电压产生约三倍的第一电压。 在第五方面中,提供了用于执行第四方面的方法的装置。