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1. 发明授权

US06384666B1 Antifuse latch device with controlled current programming and variable trip point 有权
标题翻译：具有受控电流编程和可变跳变点的防漏锁存器件
公开(公告)号：US06384666B1
公开(公告)日：2002-05-07
申请号：US09816030
申请日：2001-03-23
申请人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Nicholas M. van Heel
发明人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Nicholas M. van Heel
IPC分类号： H01H3776
CPC分类号： G11C17/18
摘要： A latch device is provided having a variable resistive trip point and controlled current programming. The latch device has a trip point current control element that controls an amount of current passing from a voltage source into the latch circuit, thereby varying the resistive trip point of the latch device. The latch device also has a programming current control element that controls an amount of programming current passing through the fuse element during programming. The trip point current reference and a programming current reference are provided by reference circuits having a plurality of selectable inputs that operate to change the current references binarily. An integrated circuit is also provided in which a plurality of the fuse latch devices are connected together in parallel such that the same trip point current reference and programming current reference are supplied to each latch device.
摘要翻译：提供具有可变电阻跳变点和受控电流编程的锁存器件。闩锁装置具有跳闸电流控制元件，其控制从电压源流入锁存电路的电流量，从而改变闩锁装置的电阻性跳变点。闩锁装置还具有编程电流控制元件，其控制在编程期间通过熔丝元件的编程电流量。跳变点电流基准和编程电流基准由具有多个可选择输入的参考电路提供，所述多个可选输入用于二次改变当前基准。还提供一种集成电路，其中多个熔丝锁存器件并联连接在一起，使得相同的跳变点电流参考和编程电流基准被提供给每个锁存器件。

2. 发明授权

US06346846B1 Methods and apparatus for blowing and sensing antifuses 失效
标题翻译：用于吹制和检测反熔丝的方法和装置
公开(公告)号：US06346846B1
公开(公告)日：2002-02-12
申请号：US09466479
申请日：1999-12-17
申请人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , William R. Tonti , Nicholas M. Van Heel
发明人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , William R. Tonti , Nicholas M. Van Heel
IPC分类号： H01H3776
CPC分类号： G11C5/145 , G11C17/18
摘要： Methods and apparatus for blowing and sensing antifuses are provided. Specifically, in a first aspect, a method is provided for changing the state of one of a plurality of antifuses by selecting one of the bank of antifuses and applying a high voltage to change the state of the selected antifuse. In second and third aspects, apparatus are provided for performing the method of the first aspect. In a fourth aspect, a method is provided for boosting a voltage that includes the steps of generating a first voltage within a first stage storage mechanism of a first stage voltage booster circuit, generating a second voltage equaling about twice the first voltage within a first and a second, second stage storage mechanism of a second stage voltage booster circuit, and generating about thrice the first voltage based on the second voltage of the second stage voltage booster circuit. In a fifth aspect, apparatus are provided for performing the method of the fourth aspect.
摘要翻译：提供了用于吹制和检测反熔丝的方法和装置。具体地，在第一方面中，提供一种通过选择一组反熔丝中的一个并且施加高电压来改变所选择的反熔丝的状态来改变多个反熔丝之一的状态的方法。在第二和第三方面中，提供了用于执行第一方面的方法的装置。在第四方面，提供了一种用于升压电压的方法，包括以下步骤：在第一级升压电路的第一级存储机构内产生第一电压，产生等于第一级升压电路中第一电压的大约两倍的第二电压，第二级升压电路的第二级第二级存储机构，并且基于第二级升压电路的第二电压产生约三倍的第一电压。在第五方面中，提供了用于执行第四方面的方法的装置。

3. 发明授权

US06420925B1 Programmable latch device with integrated programmable element 有权
标题翻译：具有集成可编程元件的可编程锁存器件
公开(公告)号：US06420925B1
公开(公告)日：2002-07-16
申请号：US09757267
申请日：2001-01-09
申请人： John A. Fifield , Erik L. Hedberg , Claude L. Bertin , Nicholas M. van Heel
发明人： John A. Fifield , Erik L. Hedberg , Claude L. Bertin , Nicholas M. van Heel
IPC分类号： H01H3776
CPC分类号： H03K3/356008 , G11C17/18
摘要： According to the present invention, a programable latch device for use in personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment programmable latch device can use both fuses and antifuses as programmable elements. The programmable latch device provides a solid digital output indicative of the state of the programmable device, and can be reliably read to provide customization and personalization of associated semiconductor devices. The preferred embodiment programable latch device includes an integrated fuse or antifuse as a programmable element in the latch device. By integrating the programmable element into the latch, device size and complexity is minimized. In particular, the number of transistors required drops considerably when compared to prior art approaches.
摘要翻译：根据本发明，提供了用于个性化半导体器件的可编程锁存器件，其克服了现有技术的限制。优选实施例可编程锁存器件可以使用熔丝和反熔丝作为可编程元件。可编程锁存器件提供指示可编程器件状态的实心数字输出，并且可被可靠地读取以提供相关半导体器件的定制和个性化。优选实施例可编程锁存装置包括作为锁存装置中的可编程元件的集成熔丝或反熔丝。通过将可编程元件集成到锁存器中，器件尺寸和复杂度最小化。特别地，与现有技术方法相比，所需的晶体管的数量显着下降。

4. 发明授权

US06177807B1 High frequency valid data strobe 失效
标题翻译：高频有效数据选通
公开(公告)号：US06177807B1
公开(公告)日：2001-01-23
申请号：US09322465
申请日：1999-05-28
申请人： Claude L. Bertin , John A. Fifield , Erik L. Hedberg , Russell J. Houghton , William R. Tonti
发明人： Claude L. Bertin , John A. Fifield , Erik L. Hedberg , Russell J. Houghton , William R. Tonti
IPC分类号： G03K1716
CPC分类号： G06F13/4086 , H03K5/06 , H04L25/0298
摘要： A processor with a memory send/received control circuit including a bus drive circuit and a detector circuit connected via control bus line to the control input of the memory. A data input line, or output line, or data input/output line is connected between the processor and the memory. A transmission line stub having a length that is incrementally variable is connected to the memory control input side of the control line 14. The impedance Z0 of the transmission line stub is equal to that of the control line and is open circuited at the end which results in voltage doubling to achieve high speed synchronization between control signals and data signals and to ensure valid data at high clock rates.
摘要翻译：具有存储器发送/接收控制电路的处理器，包括总线驱动电路和经由控制总线连接到存储器的控制输入端的检测器电路。数据输入线或输出线或数据输入/输出线连接在处理器和存储器之间。具有递增可变长度的传输线短截线连接到控制线14的存储器控制输入侧。传输线短截线的阻抗Z0等于控制线的阻抗Z0，并在结束时开路在电压倍增以实现控制信号和数据信号之间的高速同步，并确保在高时钟速率下的有效数据。

5. 发明授权

US06268748B1 Module with low leakage driver circuits and method of operation 失效
标题翻译：具有低泄漏驱动电路的模块和操作方法
公开(公告)号：US06268748B1
公开(公告)日：2001-07-31
申请号：US09073517
申请日：1998-05-06
申请人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , William R. Tonti
发明人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , William R. Tonti
IPC分类号： G03K19094
CPC分类号： G11C7/1069 , G11C7/1051 , H03K19/0016 , H03K19/09429
摘要： An electronic semiconductor module, either memory or logic, having a driver circuit which includes a multiplicity of driver transistors, together with circuitry for simultaneously applying a first positive bias to a first select number of driver transistors to activate them to an operational state, a second positive bias to a second select number of driver transistors to place them in readiness for activation, and a negative bias to the remaining driver transistors to place them in a fully inactive state thereby reducing noise in the driver circuit. The first positive bias is greater than the transistor threshold voltage, preferably greater than two volts, the second positive bias is less than the threshold voltage, preferably less than one volt, and the negative bias is in the order of minus 0.3 volt. A method of reducing noise in the electronic semiconductor module is also described and includes the applying of a positive bias to a first select number of the transistors to activate them while simultaneously applying a second positive bias to a second select number of the transistors to ready them for activation, and a negative voltage to the remaining transistors to place each in a inactive condition.
摘要翻译：一种电子半导体模块，无论是存储器还是逻辑，具有包括多个驱动器晶体管的驱动器电路，以及用于同时向第一选择数量的驱动器晶体管施加第一正偏置以将其激活到操作状态的电路，第二对第二选择数量的驱动器晶体管施加正偏置以使它们准备激活，以及对其余驱动器晶体管的负偏置以将它们置于完全无效状态，从而降低驱动器电路中的噪声。第一正偏压大于晶体管阈值电压，优选大于2伏，第二正偏压小于阈值电压，优选小于1伏特，负偏压为零下0.3伏。还描述了降低电子半导体模块中的噪声的方法，并且包括将正偏压施加到第一选择数量的晶体管以激活它们，同时向第二选择数量的晶体管施加第二正偏置以准备它们用于激活，并且向剩余晶体管施加负电压以使其处于非活动状态。

6. 发明授权

US5757693A Gain memory cell with diode 失效
标题翻译：增益二极管存储单元
公开(公告)号：US5757693A
公开(公告)日：1998-05-26
申请号：US803056
申请日：1997-02-19
申请人： Russell J. Houghton , Claude L. Bertin , John A. Fifield , Christopher P. Miller , William R. Tonti
发明人： Russell J. Houghton , Claude L. Bertin , John A. Fifield , Christopher P. Miller , William R. Tonti
IPC分类号： G11C11/402 , G11C11/403 , G11C11/405 , G11C11/24
CPC分类号： G11C11/405 , G11C11/403
摘要： A gain cell in a memory array having read and write bitlines and wordlines, wherein the gain cell comprises a write transistor, a storage node, a read transistor, and a diode is disclosed. The write transistor allows the value of the write bitline to be stored onto the storage node when activated by the write wordline. The read transistor, which allows the stored value to be read, is coupled to the storage node and to the read bitline via the diode. The diode prevents the conduction of the read transistor in the opposite direction, thus preventing read interference from other cells and reducing bitline capacitance.
摘要翻译：具有读和写位线和字线的存储器阵列中的增益单元，其中增益单元包括写晶体管，存储节点，读晶体管和二极管。当由写入字线激活时，写入晶体管允许将写入位线的值存储到存储节点上。允许读取存储值的读取晶体管通过二极管耦合到存储节点和读取位线。二极管防止读取晶体管在相反方向的导通，从而防止来自其他单元的读取干扰并减少位线电容。

7. 发明授权

US06195027B1 Capacitive precharging and discharging network for converting N bit input into M bit output 失效
标题翻译：用于将N位输入转换为M位输出的电容式预充放电网络
公开(公告)号：US06195027B1
公开(公告)日：2001-02-27
申请号：US09302744
申请日：1999-04-30
申请人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , Steven W. Tomashot , William R. Tonti
发明人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , Steven W. Tomashot , William R. Tonti
IPC分类号： H03M720
CPC分类号： G11C8/10
摘要： A method and structure for decoding n input signals and their complements to one of m output signals is provided. A capacitive network is provided having m output nodes. The output nodes are precharged to a given voltage value. N input signals and their complements are provided each having either a high value or a low value. At least one but less than all of the output nodes are discharged to a value less than the given voltage but greater than ground in output patterns responsive to given input patterns of the true and complement values of the input signals. The output patterns of the discharged nodes is such as to provide one and only one discharged or one and only one undischarged node for any given pattern of input signals. Preferably the capacitive network includes NMOS inversion capacitors.
摘要翻译：提供了用于将n个输入信号及其与m个输出信号之一的补码进行解码的方法和结构。提供具有m个输出节点的电容网络。输出节点预充电到给定的电压值。提供N个输入信号及其补码，每个具有高值或低值。响应于输入信号的真值和补码值的给定输入模式，至少一个但不到所有输出节点的输出模式被放电到小于给定电压但大于输出模式的输出值的值。放电节点的输出模式是为任何给定模式的输入信号提供一个且仅一个放电或一个且仅一个未充电节点。优选地，电容网络包括NMOS反转电容器。

8. 发明授权

US5761114A Multi-level storage gain cell with stepline 失效
标题翻译：带梯级的多级存储增益单元
公开(公告)号：US5761114A
公开(公告)日：1998-06-02
申请号：US803034
申请日：1997-02-19
申请人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , William R. Tonti
发明人： Claude L. Bertin , John A. Fifield , Russell J. Houghton , Christopher P. Miller , William R. Tonti
IPC分类号： G11C11/56
CPC分类号： G11C11/565 , G11C16/30
摘要： A method and apparatus for using multi-level signals in a gain cell is shown. The method involves of first, storing a value of a multi-level signal in the gain cell. A stepping waveform is then applied to the gain cell and the gain cell outputs a conduction signal when the level of the stepping waveform corresponds to the value of the multilevel signal that is stored within the gain cell. Finally, the value of the multi-level signal is determined through the conduction signal and the corresponding level of the stepping waveform. The gain cell includes an input device, a storage device and a level comparator, which responds to the stepping waveform generated from a stepping signal generator and outputs the conduction signal for determining the value of the multi-level signal stored in the storage device.
摘要翻译：示出了在增益单元中使用多电平信号的方法和装置。该方法首先在增益单元中存储多电平信号的值。然后，当增益单元的步进波形对应于存储在增益单元内的多电平信号的值时，增益单元输出导通信号。最后，通过导通信号和步进波形的相应电平来确定多电平信号的值。增益单元包括响应于从步进信号发生器产生的步进波形的输入装置，存储装置和电平比较器，并输出用于确定存储在存储装置中的多电平信号的值的导通信号。

9. 发明授权

US06400202B1 Programmable delay element and synchronous DRAM using the same 失效
标题翻译：可编程延迟元件和同步DRAM
公开(公告)号：US06400202B1
公开(公告)日：2002-06-04
申请号：US09988846
申请日：2001-11-19
申请人： John A. Fifield , Nicholas M. van Heel , Mark D. Jacunski , David E. Chapman , David E. Douse
发明人： John A. Fifield , Nicholas M. van Heel , Mark D. Jacunski , David E. Chapman , David E. Douse
IPC分类号： G06F104
CPC分类号： G11C7/222 , G11C7/04 , G11C7/1072 , H03K5/133 , H03K2005/00065
摘要： A programmable delay element includes a current source field-effect transistor (FET), a switch device, a precharge device, and an inverter device. The current source FET gates a programmable, predetermined amount of current. The switch device, which is coupled to the current source PET, receives an input signal having a first and second voltage level. The precharge device precharges the node coupled to the drain of the current source FET when the input signal is at a second voltage level. The inverter device, which is also coupled to the drain of the current source FET, outputs a delayed signal when the input signal is at a first voltage level, the delay of the delayed signal defined by the programmable, predetermined amount of current. The inverter device generates an inverter switch point that is substantially independent of parametric sensitivities, such as temperature variations. Also, the relative placement of the current source FET to the switch device of the present invention allows the programmable delay element to quickly reach a linear and predictable state of operation.
摘要翻译：可编程延迟元件包括电流源场效应晶体管（FET），开关器件，预充电器件和逆变器器件。电流源FET栅极可编程，预定量的电流。耦合到电流源PET的开关装置接收具有第一和第二电压电平的输入信号。当输入信号处于第二电压电平时，预充电装置对耦合到电流源FET的漏极的节点进行预充电。还耦合到电流源FET的漏极的逆变器装置在输入信号处于第一电压电平时输出延迟信号，延迟信号由可编程预定量的电流定义。逆变器装置产生基本上与参数灵敏度（例如温度变化）无关的逆变器开关点。此外，电流源FET相对于本发明的开关器件的放置允许可编程延迟元件快速达到线性和可预测的操作状态。

10. 发明授权

US06373771B1 Integrated fuse latch and shift register for efficient programming and fuse readout 有权
标题翻译：集成保险丝锁存器和移位寄存器，用于高效编程和保险丝读出
公开(公告)号：US06373771B1
公开(公告)日：2002-04-16
申请号：US09765035
申请日：2001-01-17
申请人： John A. Fifield , Wayne F. Ellis , Nicholas M. van Heel
发明人： John A. Fifield , Wayne F. Ellis , Nicholas M. van Heel
IPC分类号： G11C700
CPC分类号： G11C29/52 , G11C17/16 , G11C17/18 , G11C19/00 , G11C29/006 , G11C29/50
摘要： An integrated circuit device that obviates laser programming of a two-state element (e.g., a wire fuse or antifuse) by programming (i.e., changing) the conductive state of the two-state element according to a binary bit of programing data serially scanned in. Thereafter, the device can verify the actual programming of the two-state element by sensing the conducting condition and then serially scanning out the conductive state value of the two-sate element as a binary logic bit). The device provides the functionality of being able to test any on-chip non-memory circuitry that depends on a memory circuit being fully functional and operational while still at the wafer tester and before having to “blow” (i.e., program) any fuses.
摘要翻译：一种集成电路器件，其通过根据串行扫描的编程数据的二进制位编程（即，改变）两状态元件的导通状态来消除双状态元件（例如，线熔丝或反熔丝）的激光编程此后，器件可以通过感测导通条件来验证双态元件的实际编程，然后串行扫描两元件的导通状态值作为二进制逻辑位）。该器件提供了能够测试任何片上非存储器电路的功能，该片上非存储器电路取决于完全功能和可操作的存储器电路，同时仍然在晶片测试器处，并且在必须“吹”（即编程）任何保险丝之前。

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