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    • 1. 发明授权
    • Programmable latch device with integrated programmable element
    • 具有集成可编程元件的可编程锁存器件
    • US06420925B1
    • 2002-07-16
    • US09757267
    • 2001-01-09
    • John A. FifieldErik L. HedbergClaude L. BertinNicholas M. van Heel
    • John A. FifieldErik L. HedbergClaude L. BertinNicholas M. van Heel
    • H01H3776
    • H03K3/356008G11C17/18
    • According to the present invention, a programable latch device for use in personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment programmable latch device can use both fuses and antifuses as programmable elements. The programmable latch device provides a solid digital output indicative of the state of the programmable device, and can be reliably read to provide customization and personalization of associated semiconductor devices. The preferred embodiment programable latch device includes an integrated fuse or antifuse as a programmable element in the latch device. By integrating the programmable element into the latch, device size and complexity is minimized. In particular, the number of transistors required drops considerably when compared to prior art approaches.
    • 根据本发明,提供了用于个性化半导体器件的可编程锁存器件,其克服了现有技术的限制。 优选实施例可编程锁存器件可以使用熔丝和反熔丝作为可编程元件。 可编程锁存器件提供指示可编程器件状态的实心数字输出,并且可被可靠地读取以提供相关半导体器件的定制和个性化。 优选实施例可编程锁存装置包括作为锁存装置中的可编程元件的集成熔丝或反熔丝。 通过将可编程元件集成到锁存器中,器件尺寸和复杂度最小化。 特别地,与现有技术方法相比,所需的晶体管的数量显着下降。
    • 2. 发明授权
    • Antifuse latch device with controlled current programming and variable trip point
    • 具有受控电流编程和可变跳变点的防漏锁存器件
    • US06384666B1
    • 2002-05-07
    • US09816030
    • 2001-03-23
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonNicholas M. van Heel
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonNicholas M. van Heel
    • H01H3776
    • G11C17/18
    • A latch device is provided having a variable resistive trip point and controlled current programming. The latch device has a trip point current control element that controls an amount of current passing from a voltage source into the latch circuit, thereby varying the resistive trip point of the latch device. The latch device also has a programming current control element that controls an amount of programming current passing through the fuse element during programming. The trip point current reference and a programming current reference are provided by reference circuits having a plurality of selectable inputs that operate to change the current references binarily. An integrated circuit is also provided in which a plurality of the fuse latch devices are connected together in parallel such that the same trip point current reference and programming current reference are supplied to each latch device.
    • 提供具有可变电阻跳变点和受控电流编程的锁存器件。 闩锁装置具有跳闸电流控制元件,其控制从电压源流入锁存电路的电流量,从而改变闩锁装置的电阻性跳变点。 闩锁装置还具有编程电流控制元件,其控制在编程期间通过熔丝元件的编程电流量。 跳变点电流基准和编程电流基准由具有多个可选择输入的参考电路提供,所述多个可选输入用于二次改变当前基准。 还提供一种集成电路,其中多个熔丝锁存器件并联连接在一起,使得相同的跳变点电流参考和编程电流基准被提供给每个锁存器件。
    • 3. 发明授权
    • Methods and apparatus for blowing and sensing antifuses
    • 用于吹制和检测反熔丝的方法和装置
    • US06346846B1
    • 2002-02-12
    • US09466479
    • 1999-12-17
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonWilliam R. TontiNicholas M. Van Heel
    • Claude L. BertinJohn A. FifieldRussell J. HoughtonWilliam R. TontiNicholas M. Van Heel
    • H01H3776
    • G11C5/145G11C17/18
    • Methods and apparatus for blowing and sensing antifuses are provided. Specifically, in a first aspect, a method is provided for changing the state of one of a plurality of antifuses by selecting one of the bank of antifuses and applying a high voltage to change the state of the selected antifuse. In second and third aspects, apparatus are provided for performing the method of the first aspect. In a fourth aspect, a method is provided for boosting a voltage that includes the steps of generating a first voltage within a first stage storage mechanism of a first stage voltage booster circuit, generating a second voltage equaling about twice the first voltage within a first and a second, second stage storage mechanism of a second stage voltage booster circuit, and generating about thrice the first voltage based on the second voltage of the second stage voltage booster circuit. In a fifth aspect, apparatus are provided for performing the method of the fourth aspect.
    • 提供了用于吹制和检测反熔丝的方法和装置。 具体地,在第一方面中,提供一种通过选择一组反熔丝中的一个并且施加高电压来改变所选择的反熔丝的状态来改变多个反熔丝之一的状态的方法。 在第二和第三方面中,提供了用于执行第一方面的方法的装置。 在第四方面,提供了一种用于升压电压的方法,包括以下步骤:在第一级升压电路的第一级存储机构内产生第一电压,产生等于第一级升压电路中第一电压的大约两倍的第二电压, 第二级升压电路的第二级第二级存储机构,并且基于第二级升压电路的第二电压产生约三倍的第一电压。 在第五方面中,提供了用于执行第四方面的方法的装置。
    • 5. 发明授权
    • Programmable delay element and synchronous DRAM using the same
    • 可编程延迟元件和同步DRAM
    • US06400202B1
    • 2002-06-04
    • US09988846
    • 2001-11-19
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • G06F104
    • G11C7/222G11C7/04G11C7/1072H03K5/133H03K2005/00065
    • A programmable delay element includes a current source field-effect transistor (FET), a switch device, a precharge device, and an inverter device. The current source FET gates a programmable, predetermined amount of current. The switch device, which is coupled to the current source PET, receives an input signal having a first and second voltage level. The precharge device precharges the node coupled to the drain of the current source FET when the input signal is at a second voltage level. The inverter device, which is also coupled to the drain of the current source FET, outputs a delayed signal when the input signal is at a first voltage level, the delay of the delayed signal defined by the programmable, predetermined amount of current. The inverter device generates an inverter switch point that is substantially independent of parametric sensitivities, such as temperature variations. Also, the relative placement of the current source FET to the switch device of the present invention allows the programmable delay element to quickly reach a linear and predictable state of operation.
    • 可编程延迟元件包括电流源场效应晶体管(FET),开关器件,预充电器件和逆变器器件。 电流源FET栅极可编程,预定量的电流。 耦合到电流源PET的开关装置接收具有第一和第二电压电平的输入信号。 当输入信号处于第二电压电平时,预充电装置对耦合到电流源FET的漏极的节点进行预充电。 还耦合到电流源FET的漏极的逆变器装置在输入信号处于第一电压电平时输出延迟信号,延迟信号由可编程预定量的电流定义。 逆变器装置产生基本上与参数灵敏度(例如温度变化)无关的逆变器开关点。 此外,电流源FET相对于本发明的开关器件的放置允许可编程延迟元件快速达到线性和可预测的操作状态。
    • 7. 发明授权
    • Inductive voltage spike generator with diode shunt
    • 具有二极管分流的感应电压尖峰发生器
    • US06452439B1
    • 2002-09-17
    • US09850353
    • 2001-05-07
    • John A. FifieldNicholas M. Van heel
    • John A. FifieldNicholas M. Van heel
    • G05F110
    • H01L23/62H01L23/5256H01L23/58H01L2224/48091H01L2224/49171H01L2924/30107H02M3/155H01L2924/00014H01L2924/00
    • A voltage generator for an integrated circuit chip comprises an integrated circuit chip with a power supply having a voltage available to the chip; an inductor on or in contact with the integrated circuit chip electrically connected to the power supply through which current is driven; and a clock adapted to interrupting current flowing from the power supply through the inductor at desired time intervals to create voltage spikes above the power supply voltage. The inductor may comprise a portion of the lead frame connecting the integrated circuit chip to an integrated chip package. The voltage spikes generate a voltage about two or more times the voltage of the power supply available to the chip. Where the integrated circuit chip includes an electrical fuse and/or a battery, the fuse on the chip may be adapted to be programmed or the battery charged by the voltage spikes.
    • 一种用于集成电路芯片的电压发生器包括具有电源可用于芯片的电源的集成电路芯片; 与集成电路芯片接触或接触的电感器,其电连接到通过其驱动电流的电源; 以及适于以期望的时间间隔中断从电源流过电感器的电流以在电源电压之上产生电压尖峰的时钟。 电感器可以包括将集成电路芯片连接到集成芯片封装的引线框架的一部分。 电压尖峰产生大约是芯片可用电源电压的两倍或更多倍的电压。 在集成电路芯片包括电熔丝和/或电池的情况下,芯片上的保险丝可能被编程或由电压尖峰充电的电池。
    • 8. 发明授权
    • Programmable delay element and synchronous DRAM using the same
    • 可编程延迟元件和同步DRAM
    • US06348827B1
    • 2002-02-19
    • US09501216
    • 2000-02-10
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • H03H1126
    • G11C7/222G11C7/04G11C7/1072H03K5/133H03K2005/00065
    • A programmable delay element includes a current source field-effect transistor (FET), a switch device, a precharge device, and an inverter device. The current source FET gates a programmable, predetermined amount of current. The switch device, which is coupled to the current source FET, receives an input signal having a first and second voltage level. The precharge device precharges the node coupled to the drain of the current source FET when the input signal is at a second voltage level. The inverter device, which is also coupled to the drain of the current source FET, outputs a delayed signal when the input signal is at a first voltage level, the delay of the delayed signal defined by the programmable, predetermined amount of current. The inverter device generates an inverter switch point that is substantially independent of parametric sensitivities, such as temperature variations. Also, the relative placement of the current source FET to the switch device of the present invention allows the programmable delay element to quickly reach a linear and predictable state of operation.
    • 可编程延迟元件包括电流源场效应晶体管(FET),开关器件,预充电器件和逆变器器件。 电流源FET栅极可编程,预定量的电流。 耦合到电流源FET的开关器件接收具有第一和第二电压电平的输入信号。 当输入信号处于第二电压电平时,预充电装置对耦合到电流源FET的漏极的节点进行预充电。 还耦合到电流源FET的漏极的逆变器装置在输入信号处于第一电压电平时输出延迟信号,延迟信号由可编程预定量的电流定义。 逆变器装置产生基本上与参数灵敏度(例如温度变化)无关的逆变器开关点。 此外,电流源FET相对于本发明的开关器件的放置允许可编程延迟元件快速达到线性和可预测的操作状态。