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    • 8. 发明授权
    • Microlithographic projection exposure apparatus
    • 微光刻投影曝光装置
    • US07999916B2
    • 2011-08-16
    • US12053993
    • 2008-03-24
    • Tilmann Heil
    • Tilmann Heil
    • G03B27/54G03B27/42
    • G03F7/70191
    • A microlithographic projection exposure apparatus is disclosed. The apparatus can have an illumination system for generating projection light, an absorption filter which has a varying absorption coefficient distribution, and a mask which is illuminated by the projection light. The mask can contain regions that differ from one another by the orientation of structures contained in them and whose transmissivity depends on the polarization state of the incident projection light. The absorption coefficient distribution of the absorption filter is determined so as to compensate at least partially for the dependence of the transmissivity of the region on the polarization state of the incident projection light.
    • 公开了一种微光刻投影曝光装置。 该装置可以具有用于产生投影光的照明系统,具有变化的吸收系数分布的吸收滤光器和由投影光照亮的掩模。 掩模可以包含彼此不同的区域,其中包含在其中的结构的取向,并且其透射率取决于入射的投影光的偏振状态。 吸收滤光器的吸收系数分布被确定为至少部分地补偿该区域的透射率对入射投影光的偏振状态的依赖性。
    • 10. 发明授权
    • Projection exposure method and projection exposure apparatus for microlithography
    • 投影曝光法和微光刻投影曝光装置
    • US07800732B2
    • 2010-09-21
    • US12643637
    • 2009-12-21
    • Joerg ZimmermannHeiko FeldmannTilmann HeilPaul GraeupnerUlrich Gebhardt
    • Joerg ZimmermannHeiko FeldmannTilmann HeilPaul GraeupnerUlrich Gebhardt
    • G03B27/42G03B27/52G03B27/58
    • G03F7/70333G03F9/7026
    • A projection exposure method for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask arranged in the region of an object surface of the projection objective includes exposing the substrate with the image of the pattern in an effective image field of the projection objective during an exposure time interval and also altering a relative positioning between a surface of the substrate and a focus surface of the projection objective during the exposure time interval in such a way that image points in the effective image field are exposed with different focus positions of the image of the mask during the exposure time interval. An active compensation of at least one portion of at least one imaging aberration induced by the change in the focus positions during the exposure time interval has the effect that the imaging quality is not significantly impaired by the alteration of the focusing during the exposure time interval.
    • 投影曝光方法,用于在布置在投影物镜的物体表面的区域中的掩模图案的至少一个图像的布置在投影物镜的图像区域的区域中的辐射敏感基板的曝光包括曝光 在曝光时间间隔期间在投影物镜的有效图像场中具有图案的图像的基板,并且还可以在曝光时间间隔期间在曝光时间间隔期间改变基板的表面与投影物镜的焦点表面之间的相对定位 在曝光时间间隔期间,有效图像场中的图像点在掩模的图像的不同焦点位置被曝光的方式。 在曝光时间间隔期间由聚焦位置的变化引起的至少一个成像像差的至少一部分的有效补偿具有这样的效果,即在曝光时间间隔期间聚焦改变不会显着地损害成像质量。