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1. 发明授权

US07300745B2 Use of pedestals to fabricate contact openings 失效
标题翻译：使用基座制作接触孔
公开(公告)号：US07300745B2
公开(公告)日：2007-11-27
申请号：US10772520
申请日：2004-02-04
申请人： Chia-Shun Hsiao , Chunchieh Huang , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel C. Wang
发明人： Chia-Shun Hsiao , Chunchieh Huang , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel C. Wang
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L27/11539 , H01L27/115 , H01L27/11526
摘要： Nonvolatile memory wordlines (160) are formed as sidewall spacers on sidewalls of control gate structures (280). Each control gate structure may contain floating and control gates (120, 140), or some other elements. Pedestals (340) are formed adjacent to the control gate structures before the conductive layer (160) for the wordlines is deposited. The pedestals will facilitate formation of the contact openings (330.1) that will be etched in an overlying dielectric (310) to form contacts to the wordlines. The pedestals can be dummy structures. A pedestal can physically contact two wordlines.
摘要翻译：非易失性存储器字线（160）形成为控制栅极结构（280）的侧壁上的侧壁间隔物。每个控制栅极结构可以包含浮动和控制栅极（120,140）或一些其它元件。在用于字线的导电层（160）被沉积之前，基座（340）形成为与控制栅极结构相邻。基座将有助于形成将在上覆电介质（310）中蚀刻的接触开口（330.1），以形成与字线的接触。基座可以是虚拟结构。基座可以物理接触两个字线。

2. 发明授权

US07071115B2 Use of multiple etching steps to reduce lateral etch undercut 有权
公开(公告)号：US07071115B2
公开(公告)日：2006-07-04
申请号：US10772932
申请日：2004-02-04
申请人： Chunchieh Huang , Chia-Shun Hsiao , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel C. Wang
发明人： Chunchieh Huang , Chia-Shun Hsiao , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel C. Wang
IPC分类号： H01L21/302 , H01L21/461 , H01L21/44 , H01L21/76
CPC分类号： H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11539
摘要： In integrated circuit fabrication, an etch is used that has a lateral component. For example, the etch may be isotropic. Before the isotropic etch of a layer (160), another etch of the same layer is performed. This other etch can be anisotropic. This etch attacks a portion (160X2) of the layer adjacent to the feature to be formed by the isotropic etch. That portion is entirely or partially removed by the anisotropic etch. Then the isotropic etch mask (420) is formed to extend beyond the feature over the location of the portion subjected to the anisotropic etch. If that portion was removed entirely, then the isotropic etch mask may completely seal off the feature to be formed on the side of that portion, so the lateral etching will not occur. If that portion was removed only partially, then the lateral undercut will be impeded because the passage to the feature under the isotropic etch mask will be narrowed.

3. 发明申请

US20050170646A1 Use of multiple etching steps to reduce lateral etch undercut 有权
标题翻译：使用多个蚀刻步骤来减少横向蚀刻底切
公开(公告)号：US20050170646A1
公开(公告)日：2005-08-04
申请号：US10772932
申请日：2004-02-04
申请人： Chunchieh Huang , Chia-Shun Hsiao , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel Wang
发明人： Chunchieh Huang , Chia-Shun Hsiao , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel Wang
IPC分类号： H01L21/44 , H01L21/8247 , H01L27/105 , H01L27/115
CPC分类号： H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11539
摘要： In integrated circuit fabrication, an etch is used that has a lateral component. For example, the etch may be isotropic. Before the isotropic etch of a layer (160), another etch of the same layer is performed. This other etch can be anisotropic. This etch attacks a portion (160X2) of the layer adjacent to the feature to be formed by the isotropic etch. That portion is entirely or partially removed by the anisotropic etch. Then the isotropic etch mask (420) is formed to extend beyond the feature over the location of the portion subjected to the anisotropic etch. If that portion was removed entirely, then the isotropic etch mask may completely seal off the feature to be formed on the side of that portion, so the lateral etching will not occur. If that portion was removed only partially, then the lateral undercut will be impeded because the passage to the feature under the isotropic etch mask will be narrowed.
摘要翻译：在集成电路制造中，使用具有侧向分量的蚀刻。例如，蚀刻可以是各向同性的。在层（160）的各向同性蚀刻之前，执行相同层的另一蚀刻。这种其他蚀刻可以是各向异性的。该蚀刻攻击通过各向同性蚀刻形成的与特征相邻的层的部分（160×2）。该部分被各向异性蚀刻完全或部分地去除。然后，各向同性蚀刻掩模（420）被形成为延伸超过经过各向异性蚀刻的部分的位置的特征。如果完全去除该部分，则各向同性蚀刻掩模可以完全密封要在该部分侧面上形成的特征，因此不会发生横向蚀刻。如果该部分仅部分被去除，则横向底切将被阻碍，因为在各向同性蚀刻掩模下的特征的通过将变窄。

4. 发明申请

US20060211255A1 Use of multiple etching steps to reduce lateral etch undercut 审中-公开
标题翻译：使用多个蚀刻步骤来减少横向蚀刻底切
公开(公告)号：US20060211255A1
公开(公告)日：2006-09-21
申请号：US11432222
申请日：2006-05-10
申请人： Chunchieh Huang , Chia-Shun Hsiao , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel Wang
发明人： Chunchieh Huang , Chia-Shun Hsiao , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel Wang
IPC分类号： H01L21/302
CPC分类号： H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11539
摘要： In integrated circuit fabrication, an etch is used that has a lateral component. For example, the etch may be isotropic. Before the isotropic etch of a layer (160), another etch of the same layer is performed. This other etch can be anisotropic. This etch attacks a portion (160X2) of the layer adjacent to the feature to be formed by the isotropic etch. That portion is entirely or partially removed by the anisotropic etch. Then the isotropic etch mask (420) is formed to extend beyond the feature over the location of the portion subjected to the anisotropic etch. If that portion was removed entirely, then the isotropic etch mask may completely seal off the feature to be formed on the side of that portion, so the lateral etching will not occur. If that portion was removed only partially, then the lateral undercut will be impeded because the passage to the feature under the isotropic etch mask will be narrowed.
摘要翻译：在集成电路制造中，使用具有侧向分量的蚀刻。例如，蚀刻可以是各向同性的。在层（160）的各向同性蚀刻之前，执行相同层的另一蚀刻。这种其他蚀刻可以是各向异性的。该蚀刻攻击通过各向同性蚀刻形成的与特征相邻的层的部分（160×2）。该部分被各向异性蚀刻完全或部分地去除。然后，各向同性蚀刻掩模（420）被形成为延伸超过经过各向异性蚀刻的部分的位置的特征。如果完全去除该部分，则各向同性蚀刻掩模可以完全密封要在该部分侧面上形成的特征，因此不会发生横向蚀刻。如果该部分仅部分被去除，则横向底切将被阻碍，因为在各向同性蚀刻掩模下的特征的通过将变窄。

5. 发明申请

US20050170578A1 Use of pedestals to fabricate contact openings 失效
标题翻译：使用基座制作接触孔
公开(公告)号：US20050170578A1
公开(公告)日：2005-08-04
申请号：US10772520
申请日：2004-02-04
申请人： Chia-Shun Hsiao , Chunchieh Huang , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel Wang
发明人： Chia-Shun Hsiao , Chunchieh Huang , Jin-Ho Kim , Kuei-Chang Tsai , Barbara Haselden , Daniel Wang
IPC分类号： H01L21/76 , H01L21/8238 , H01L21/8247 , H01L27/115
CPC分类号： H01L27/11539 , H01L27/115 , H01L27/11526
摘要： Nonvolatile memory wordlines (160) are formed as sidewall spacers on sidewalls of control gate structures (280). Each control gate structure may contain floating and control gates (120, 140), or some other elements. Pedestals (340) are formed adjacent to the control gate structures before the conductive layer (160) for the wordlines is deposited. The pedestals will facilitate formation of the contact openings (330.1) that will be etched in an overlying dielectric (310) to form contacts to the wordlines. The pedestals can be dummy structures. A pedestal can physically contact two wordlines.
摘要翻译：非易失性存储器字线（160）形成为控制栅极结构（280）的侧壁上的侧壁间隔物。每个控制栅极结构可以包含浮动和控制栅极（120,140）或一些其它元件。在用于字线的导电层（160）被沉积之前，基座（340）形成为与控制栅极结构相邻。基座将有助于形成将在上覆电介质（310）中蚀刻的接触开口（330.1），以形成与字线的接触。基座可以是虚拟结构。基座可以物理接触两个字线。

6. 发明授权

US06566196B1 Sidewall protection in fabrication of integrated circuits 有权
标题翻译：集成电路制造中的侧壁保护
公开(公告)号：US06566196B1
公开(公告)日：2003-05-20
申请号：US10146979
申请日：2002-05-15
申请人： Barbara Haselden , Chia-Shun Hsiao , Chunchieh Huang , Jin-Ho Kim , Chung Wai Leung , Kuei-Chang Tsai
发明人： Barbara Haselden , Chia-Shun Hsiao , Chunchieh Huang , Jin-Ho Kim , Chung Wai Leung , Kuei-Chang Tsai
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , Y10S438/954
摘要： In a nonvolatile memory, a floating gate (124) is covered with ONO (98), and a control gate polysilicon layer (124) is formed on the ONO. After the control gate is patterned, the control gate sidewalls are oxidized to form a protective layer (101) of silicon dioxide. This oxide protects the control gate polysilicon during a subsequent etch of the silicon nitride portion (98.2) of the ONO. Therefore, the silicon nitride can be removed with an isotropic etch. A potential damage to the substrate isolation dielectric (210) is therefore reduced. Other embodiments are also provided.
摘要翻译：在非易失性存储器中，浮动栅极（124）被ONO（98）覆盖，并且在ONO上形成控制栅多晶硅层（124）。在控制栅极被图案化之后，控制栅极侧壁被氧化以形成二氧化硅的保护层（101）。该氧化物在ONO的氮化硅部分（98.2）的随后蚀刻期间保护控制栅极多晶硅。因此，可以用各向同性蚀刻去除氮化硅。因此，减小了对衬底隔离电介质（210）的潜在损害。还提供了其他实施例。

7. 发明申请

US20050227437A1 Method of forming ONO-type sidewall with reduced bird's beak 有权
标题翻译：用鸟喙形成ONO型侧壁的方法
公开(公告)号：US20050227437A1
公开(公告)日：2005-10-13
申请号：US10821100
申请日：2004-04-07
申请人： Zhong Dong , Chuck Jang , Ching-Hwa Chen , Chunchieh Huang , Jin-Ho Kim , Vei-Han Chan , Chung Leung , Chia-Shun Hsiao , George Kovall , Steven Yang
发明人： Zhong Dong , Chuck Jang , Ching-Hwa Chen , Chunchieh Huang , Jin-Ho Kim , Vei-Han Chan , Chung Leung , Chia-Shun Hsiao , George Kovall , Steven Yang
IPC分类号： H01L21/28 , H01L21/336 , H01L29/423 , H01L29/51 , H01L29/788
CPC分类号： H01L21/28273 , H01L29/42328 , H01L29/513 , H01L29/7881
摘要： Conventional fabrication of sidewall oxide around an ONO-type memory cell stack usually produces Bird's Beak because prior to the fabrication, there is an exposed sidewall of the ONO-type memory cell stack that exposes side parts of a plurality of material layers respectively composed of different materials. Certain materials in the stack such as silicon nitrides are more difficult to oxidize than other materials in the stack such polysilicon. As a result oxidation does not proceed uniformly along the multi-layered height of the sidewall. The present disclosure shows how radical-based fabrication of sidewall dielectric can help to reduce the Bird's Beak formation. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse as deeply through already oxidized layers of the sidewall such as silicon oxide layers. As a result, a more uniform sidewall dielectric can be fabricated with more uniform breakdown voltages along it height.
摘要翻译：通常在ONO型存储单元堆叠周围制造侧壁氧化物通常产生鸟喙，因为在制造之前，存在ONO型存储单元堆叠的暴露的侧壁，其暴露分别由不同的多个材料层组成的多个材料层的侧面部分材料堆叠中的某些材料如氮化硅比堆叠中的其它材料更难以氧化，这样的多晶硅。结果，氧化不沿着侧壁的多层高度均匀地进行。本公开显示了基于侧壁电介质的基于基础的制造有助于减少鸟喙形成。更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料如氮化硅，并且表明短寿命氧化剂交替地或另外不扩散为深深地通过侧壁的已氧化层，例如氧化硅层。结果，可以制造更均匀的侧壁电介质，沿其高度具有更均匀的击穿电压。

8. 发明授权

US07910429B2 Method of forming ONO-type sidewall with reduced bird's beak 有权
标题翻译：用鸟喙形成ONO型侧壁的方法
公开(公告)号：US07910429B2
公开(公告)日：2011-03-22
申请号：US10821100
申请日：2004-04-07
申请人： Zhong Dong , Chuck Jang , Ching-Hwa Chen , Chunchieh Huang , Jin-Ho Kim , Vei-Han Chan , Chung Wai Leung , Chia-Shun Hsiao , George Kovall , Steven Ming Yang
发明人： Zhong Dong , Chuck Jang , Ching-Hwa Chen , Chunchieh Huang , Jin-Ho Kim , Vei-Han Chan , Chung Wai Leung , Chia-Shun Hsiao , George Kovall , Steven Ming Yang
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L29/42328 , H01L29/513 , H01L29/7881
摘要： Conventional fabrication of sidewall oxide around an ONO-type memory cell stack usually produces Bird's Beak because prior to the fabrication, there is an exposed sidewall of the ONO-type memory cell stack that exposes side parts of a plurality of material layers respectively composed of different materials. Certain materials in the stack such as silicon nitrides are more difficult to oxidize than other materials in the stack such polysilicon. As a result oxidation does not proceed uniformly along the multi-layered height of the sidewall. The present disclosure shows how radical-based fabrication of sidewall dielectric can help to reduce the Bird's Beak formation. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse as deeply through already oxidized layers of the sidewall such as silicon oxide layers. As a result, a more uniform sidewall dielectric can be fabricated with more uniform breakdown voltages along it height.
摘要翻译：通常在ONO型存储单元堆叠周围制造侧壁氧化物通常产生鸟喙，因为在制造之前，存在ONO型存储单元堆叠的暴露的侧壁，其暴露分别由不同的多个材料层组成的多个材料层的侧面部分材料堆叠中的某些材料如氮化硅比堆叠中的其它材料更难以氧化，这样的多晶硅。结果，氧化不沿着侧壁的多层高度均匀地进行。本公开显示了基于侧壁电介质的基于基础的制造有助于减少鸟喙形成。更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料如氮化硅，并且表明短寿命氧化剂交替地或另外不扩散为深深地通过侧壁的已氧化层，例如氧化硅层。结果，可以制造更均匀的侧壁电介质，沿其高度具有更均匀的击穿电压。

9. 发明授权

US07387942B2 Substrate isolation in integrated circuits 有权
公开(公告)号：US07387942B2
公开(公告)日：2008-06-17
申请号：US10732616
申请日：2003-12-09
申请人： Daniel Wang , Chunchieh Huang , Dong Jun Kim
发明人： Daniel Wang , Chunchieh Huang , Dong Jun Kim
IPC分类号： H01L21/425 , H01L21/762
CPC分类号： H01L27/11526 , H01L21/76237 , H01L21/823481 , H01L27/105 , H01L27/11539 , H01L27/11546
摘要： Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.

10. 发明授权

US07358149B2 Substrate isolation in integrated circuits 有权
标题翻译：集成电路中的基板隔离
公开(公告)号：US07358149B2
公开(公告)日：2008-04-15
申请号：US11193150
申请日：2005-07-29
申请人： Daniel Wang , Chunchieh Huang , Dong Jun Kim
发明人： Daniel Wang , Chunchieh Huang , Dong Jun Kim
IPC分类号： H01L21/425
CPC分类号： H01L27/11526 , H01L21/76237 , H01L21/823481 , H01L27/105 , H01L27/11539 , H01L27/11546
摘要： Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.
摘要翻译：衬底隔离沟槽（224）形成在半导体衬底（120）中。通过离子注入将掺杂剂（例如硼）注入到沟槽侧壁中，以抑制沿着侧壁的电流泄漏。在离子注入期间，晶体管栅极电介质（520）面向离子流，但在随后的热步骤中对栅极电介质的损坏退火。在一些实施例中，掺杂剂注入是成角度的植入物。植入物从晶片的相对侧进行，并且因此从每个有效区域的相对侧进行。每个有源区域包括从一侧注入的区域和从相对侧注入的区域。两个区域重叠以便于阈值电压调整。

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