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1. 发明授权

US07618520B2 Physical vapor deposition target constructions 有权
标题翻译：物理气相沉积目标结构
公开(公告)号：US07618520B2
公开(公告)日：2009-11-17
申请号：US11234615
申请日：2005-09-23
申请人： Chi tse Wu , Stephane Ferrasse , Frank C. Alford , Susanne Grabmeier , Werner H. Hort , Jaeyeon Kim , Susan D. Strothers , Andrew Wragg , Robert Prater
发明人： Chi tse Wu , Stephane Ferrasse , Frank C. Alford , Susanne Grabmeier , Werner H. Hort , Jaeyeon Kim , Susan D. Strothers , Andrew Wragg , Robert Prater
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3426
摘要： The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front surface. An o-ring groove is disposed within the flange region. The o-ring groove has a planar base surface which has a first width and has an orifice disposed along the front surface of the flange. The orifice has a second width as measured parallel relative to the base surface. The second width is greater than the first width. The flange surfaces can additionally be protected from rubbing by a layer of protective material.
摘要翻译：本发明包括具有溅射区域和相对于溅射区域横向向外的凸缘区域的目标结构。凸缘区域具有设置在结构的正面上的前表面和与前表面相对的后表面。 O形环槽设置在凸缘区域内。 O形环槽具有平坦的基面，其具有第一宽度并且具有沿凸缘的前表面设置的孔。孔口具有相对于基底表面平行测量的第二宽度。第二宽度大于第一宽度。凸缘表面可另外被保护，免受一层保护材料的摩擦。

2. 发明申请

US20060070876A1 Physical vapor deposition target constructions 有权
公开(公告)号：US20060070876A1
公开(公告)日：2006-04-06
申请号：US11234615
申请日：2005-09-23
申请人： Chi Wu , Stephane Ferrasse , Frank Alford , Susanne Grabmeier , Werner Hort , Jaeyeon Kim , Susan Strothers , Andrew Wragg , Robert Prater
发明人： Chi Wu , Stephane Ferrasse , Frank Alford , Susanne Grabmeier , Werner Hort , Jaeyeon Kim , Susan Strothers , Andrew Wragg , Robert Prater
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3426
摘要： The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front surface. An o-ring groove is disposed within the flange region. The o-ring groove has a planar base surface which has a first width and has an orifice disposed along the front surface of the flange. The orifice has a second width as measured parallel relative to the base surface. The second width is greater than the first width. The flange surfaces can additionally be protected from rubbing by a layer of protective material.

3. 发明申请

US20060278520A1 Use of DC magnetron sputtering systems 审中-公开
标题翻译：使用直流磁控溅射系统
公开(公告)号：US20060278520A1
公开(公告)日：2006-12-14
申请号：US11150900
申请日：2005-06-13
申请人： Eal Lee , Robert Prater , Nicole Truong , Jaeyeon Kim
发明人： Eal Lee , Robert Prater , Nicole Truong , Jaeyeon Kim
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/3407 , C23C14/564
摘要： A DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target that comprises at least one sidewall; a plasma ignition arc; and a catch-ring coupled to and located around the shield. Another DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Yet another DC magnetron sputtering system is described herein that comprises an anodic shield comprising at least one protrusion; a cathodic target comprising at least one recess, cavity or a combination thereof; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the at least one protrusion coupled to the anodic shield and the at least one protrusion, recess or cavity. Methods are also provided whereby the gas turbulence effect is mitigated, such methods including providing an anodic shield; providing a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Additional methods include providing an anodic shield; providing a cathodic target that comprises at least one sidewall; providing a catch-ring coupled to and around the shield; and initiating a plasma ignition arc.
摘要翻译：描述了包括阳极屏蔽的直流磁控溅射系统; 包括至少一个侧壁的阴极靶; 等离子体点火电弧; 以及联接到并位于护罩周围的卡环。描述了包括阳极屏蔽的另一个DC磁控溅射系统; 包括至少一个凹部，空腔或其组合以及至少一个突起的阴极靶; 以及等离子体点火电弧，由此电弧位于阳极屏蔽和至少一个凹部，空腔或其组合之间的最小阻力点处，该至少一个突起或其组合。本文描述了另一个DC磁控溅射系统，其包括包括至少一个突起的阳极屏蔽; 包括至少一个凹部，空腔或其组合的阴极靶; 和等离子体点火电弧，由此电弧位于耦合到阳极屏蔽的至少一个突起与至少一个突起，凹部或空腔之间的最小阻力点。还提供了减轻气体紊流效应的方法，包括提供阳极屏蔽的方法; 提供阴极靶，其包括至少一个凹部，空腔或其组合以及至少一个突起; 以及启动等离子体点火电弧，由此所述电弧位于所述阳极屏蔽和所述至少一个凹部，空腔或其组合之间的最小阻力点处，所述至少一个突起或其组合。附加方法包括提供阳极屏蔽; 提供包括至少一个侧壁的阴极靶; 提供耦合到屏蔽件周围的卡环; 并启动等离子体点火电弧。

4. 发明授权

US09659758B2 Coils utilized in vapor deposition applications and methods of production 有权
公开(公告)号：US09659758B2
公开(公告)日：2017-05-23
申请号：US11086022
申请日：2005-03-22
申请人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
发明人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
IPC分类号： C23C14/34 , H01J37/34 , H01J37/32 , C23C14/56
CPC分类号： H01J37/3405 , C23C14/34 , C23C14/564 , H01J37/321 , H01J37/32477 , H01J37/32541 , H01J37/32651 , H01J37/3438
摘要： A coil assembly for utilization in a vapor deposition system is described herein that includes at least one subject coil having a length, a height, an inside edge, an outside edge and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the thickness of the subject coil is reduced by at least 20% as compared to a reference coil. A coil assembly is also described herein for utilization in a vapor deposition system that includes at least one subject coil having a length, a height, an inside edge, an outside edge, and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the height of at least part of the subject coil is reduced by at least 20% as compared to the height of a reference coil.

5. 发明申请

US20060213769A1 Coils utilized in vapor deposition applications and methods of production 有权
标题翻译：气相沉积应用中使用的线圈和生产方法
公开(公告)号：US20060213769A1
公开(公告)日：2006-09-28
申请号：US11086022
申请日：2005-03-22
申请人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
发明人： Eal Lee , Nicole Truong , Robert Prater , Norm Sand
IPC分类号： C23C14/00
CPC分类号： H01J37/3405 , C23C14/34 , C23C14/564 , H01J37/321 , H01J37/32477 , H01J37/32541 , H01J37/32651 , H01J37/3438
摘要： A coil assembly for utilization in a vapor deposition system is described herein that includes at least one subject coil having a length, a height, an inside edge, an outside edge and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the thickness of the subject coil is reduced by at least 20% as compared to a reference coil. A coil assembly is also described herein for utilization in a vapor deposition system that includes at least one subject coil having a length, a height, an inside edge, an outside edge, and a thickness, wherein the thickness of the subject coil is measured as the distance between the inside edge and the outside edge and wherein at least part of the height of at least part of the subject coil is reduced by at least 20% as compared to the height of a reference coil.
摘要翻译：本文描述了一种用于气相沉积系统中的线圈组件，其包括具有长度，高度，内边缘，外边缘和厚度的至少一个主体线圈，其中被测线圈的厚度被测量为距离在所述内边缘和所述外边缘之间，并且其中所述主体线圈的至少部分厚度与参考线圈相比降低至少20％。本文还描述了一种用于气相沉积系统中的线圈组件，其包括具有长度，高度，内边缘，外边缘和厚度的至少一个主体线圈，其中被测线圈的厚度被测量为内边缘和外边缘之间的距离，并且其中至少部分被检体线圈的高度的至少一部分与参考线圈的高度相比降低至少20％。

6. 发明申请

US20080274369A1 Novel Ruthenium-Based Materials and Ruthenium Alloys, Their Use in Vapor Deposition or Atomic Layer Deposition and Films Produced Therefrom 审中-公开
标题翻译：新型钌基材料和钌合金，它们在气相沉积或原子层沉积中的应用及其生产的薄膜
公开(公告)号：US20080274369A1
公开(公告)日：2008-11-06
申请号：US11911954
申请日：2005-04-21
申请人： Eal H. Lee , Nicola Truong , Robert Prater , Morales Diana
发明人： Eal H. Lee , Nicola Truong , Robert Prater , Morales Diana
IPC分类号： B32B15/00 , C22C5/04 , B32B9/00 , C23C14/34
CPC分类号： C22C5/04 , B32B15/018 , C23C14/0036 , C23C14/0641 , C23C14/165 , C23C14/3414 , C23C14/58 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L29/495 , H01L29/4966 , H01L2924/0002 , Y10T428/1266 , Y10T428/12806 , Y10T428/12819 , Y10T428/12826 , Y10T428/1284 , H01L2924/00
摘要： An alloy for use in vapor deposition or atomic layer deposition is described herein that includes ruthenium and at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof. In addition, a layered material is described herein that comprises at least one layer that includes a ruthenium-based material or ruthenium-based alloy and at least one layer that includes at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof.
摘要翻译：本文描述了用于气相沉积或原子层沉积的合金，其包括钌和元素周期图的IV，V或VI族中的至少一种元素或其组合。此外，本文描述的层状材料包括至少一层包括钌基材料或钌基合金的层，以及至少一层，其包括至少一种元素周期表IV，V或VI族元素元素或其组合。

7. 发明申请

US20050284756A1 Single piece coil support assemblies, coil constructions and methods of assembling coil constructions 失效
标题翻译：单线圈支撑组件，线圈结构和组装线圈结构的方法
公开(公告)号：US20050284756A1
公开(公告)日：2005-12-29
申请号：US10880172
申请日：2004-06-28
申请人： Len Hom , John Mize , Robert Prater , David Chan , Gilbert Amador , Peter Kang
发明人： Len Hom , John Mize , Robert Prater , David Chan , Gilbert Amador , Peter Kang
IPC分类号： C23C14/04 , C23C14/34 , H01J37/34 , C23C14/00
CPC分类号： H01J37/3447 , H01J37/34
摘要： The invention includes a coil support assembly having an insulator interfacing a surface of a shield disposed within a processing chamber. The insulator has an extension which extends through the shield. A second insulator is disposed between the shield and a coil and contacts a protrusion extending from the coil. A fastener is disposed through the first insulator and extends through the second insulator and into the protrusion. The fastener is electrically isolated from the shield by the first insulator. The invention includes coil assemblies containing the described coil support configuration. The invention further includes a method of supporting a coil within a processing chamber having a shield disposed therein. Insulators are inserted to extend from an outer side of the shield through a thickness of the shield. A coil is mounted within the chamber by inserting fasteners through each insulator into bosses which-protrude outwardly from the coil body.
摘要翻译：本发明包括线圈支撑组件，其具有与设置在处理室内的屏蔽件的表面接合的绝缘体。绝缘体具有延伸穿过护罩的延伸部。第二绝缘体设置在屏蔽和线圈之间，并接触从线圈延伸的突起。紧固件穿过第一绝缘体设置并延伸穿过第二绝缘体并进入突出部。紧固件通过第一绝缘体与屏蔽件电隔离。本发明包括包含所描述的线圈支撑构造的线圈组件。本发明还包括在处理室内支撑线圈的方法，其中设置有屏蔽件。插入绝缘体以从屏蔽件的外侧延伸穿过屏蔽层的厚度。线圈通过将紧固件穿过每个绝缘体安装在腔室内，从而从线圈体向外突出。

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