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    • 3. 发明申请
    • TARGET DESIGNS AND RELATED METHODS FOR COUPLED TARGET ASSEMBLIES, METHODS OF PRODUCTION AND USES THEREOF
    • 联合目标组件的目标设计及相关方法,生产方法及其用途
    • US20090045051A1
    • 2009-02-19
    • US11838166
    • 2007-08-13
    • Stephane FerrasseWerner H. HortJaeyeon KimFrank C. Alford
    • Stephane FerrasseWerner H. HortJaeyeon KimFrank C. Alford
    • C23C14/50B21D39/00
    • C23C14/3407B21K25/00H01J37/3414H01J37/3423H01J37/3426Y10T29/49826
    • Sputtering targets are described that comprise: a) a target surface component comprising a target material; b) a core backing component having a coupling surface, a back surface and at least one open area, wherein the coupling surface is coupled to at least part of the target surface component; and wherein at least part of the target surface component fits into at least one open area of the core backing component. In some embodiments, the target surface component, the core backing component or a combination thereof have at least one surface area feature coupled to or located in the back surface of the core backing component, the target surface component or a combination thereof, wherein the surface area feature increases the cooling effectiveness of the target surface component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component having a coupling surface, a back surface and at least one open area; c) coupling the coupling surface to at least part of the target surface component, wherein at least part of the target surface component fits into the at least one open area of the core backing component.
    • 描述了溅射靶,其包括:a)包含靶材料的靶表面组分; b)具有联接表面,后表面和至少一个开放区域的芯背衬部件,其中所述耦合表面耦合到所述目标表面部件的至少一部分; 并且其中所述目标表面部件的至少一部分装配到所述芯背衬部件的至少一个开放区域中。 在一些实施例中,目标表面部件,芯部背衬部件或其组合具有至少一个表面区域特征,其耦合到或位于芯背衬部件,目标表面部件或其组合的后表面中,其中表面 面积特征增加了目标表面部件的冷却效果。 还描述了形成溅射靶的方法,其包括:a)提供包含表面材料的靶表面组分; b)提供具有联接表面,后表面和至少一个开放区域的芯背衬部件; c)将所述耦合表面耦合到所述目标表面部件的至少一部分,其中所述目标表面部件的至少一部分装配到所述芯部背衬部件的所述至少一个开放区域中。
    • 4. 发明授权
    • Target designs and related methods for coupled target assemblies, methods of production and uses thereof
    • 耦合目标组件的目标设计和相关方法,生产方法及其用途
    • US08702919B2
    • 2014-04-22
    • US11838166
    • 2007-08-13
    • Stephane FerrasseWerner H. HortJaeyeon KimFrank C. Alford
    • Stephane FerrasseWerner H. HortJaeyeon KimFrank C. Alford
    • C23C14/34
    • C23C14/3407B21K25/00H01J37/3414H01J37/3423H01J37/3426Y10T29/49826
    • Sputtering targets are described that comprise: a) a target surface component comprising a target material; b) a core backing component having a coupling surface, a back surface and at least one open area, wherein the coupling surface is coupled to at least part of the target surface component; and wherein at least part of the target surface component fits into at least one open area of the core backing component. In some embodiments, the target surface component, the core backing component or a combination thereof have at least one surface area feature coupled to or located in the back surface of the core backing component, the target surface component or a combination thereof, wherein the surface area feature increases the cooling effectiveness of the target surface component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component having a coupling surface, a back surface and at least one open area; c) coupling the coupling surface to at least part of the target surface component, wherein at least part of the target surface component fits into the at least one open area of the core backing component.
    • 描述了溅射靶,其包括:a)包含靶材料的靶表面组分; b)具有联接表面,后表面和至少一个开放区域的芯背衬部件,其中所述耦合表面耦合到所述目标表面部件的至少一部分; 并且其中所述目标表面部件的至少一部分装配到所述芯背衬部件的至少一个开放区域中。 在一些实施例中,目标表面部件,芯部背衬部件或其组合具有至少一个表面区域特征,其耦合到或位于芯背衬部件,目标表面部件或其组合的后表面中,其中表面 面积特征增加了目标表面部件的冷却效果。 还描述了形成溅射靶的方法,其包括:a)提供包含表面材料的靶表面组分; b)提供具有联接表面,后表面和至少一个开放区域的芯背衬部件; c)将所述耦合表面耦合到所述目标表面部件的至少一部分,其中所述目标表面部件的至少一部分装配到所述芯部背衬部件的所述至少一个开放区域中。
    • 6. 发明申请
    • Use of DC magnetron sputtering systems
    • 使用直流磁控溅射系统
    • US20060278520A1
    • 2006-12-14
    • US11150900
    • 2005-06-13
    • Eal LeeRobert PraterNicole TruongJaeyeon Kim
    • Eal LeeRobert PraterNicole TruongJaeyeon Kim
    • C23C14/32C23C14/00
    • C23C14/3407C23C14/564
    • A DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target that comprises at least one sidewall; a plasma ignition arc; and a catch-ring coupled to and located around the shield. Another DC magnetron sputtering system is described that comprises an anodic shield; a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Yet another DC magnetron sputtering system is described herein that comprises an anodic shield comprising at least one protrusion; a cathodic target comprising at least one recess, cavity or a combination thereof; and a plasma ignition arc, whereby the arc is located at the point of least resistance between the at least one protrusion coupled to the anodic shield and the at least one protrusion, recess or cavity. Methods are also provided whereby the gas turbulence effect is mitigated, such methods including providing an anodic shield; providing a cathodic target comprising at least one recess, cavity or a combination thereof and at least one protrusion; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the at least one recess, cavity or a combination thereof, the at least one protrusion or a combination thereof. Additional methods include providing an anodic shield; providing a cathodic target that comprises at least one sidewall; providing a catch-ring coupled to and around the shield; and initiating a plasma ignition arc.
    • 描述了包括阳极屏蔽的直流磁控溅射系统; 包括至少一个侧壁的阴极靶; 等离子体点火电弧; 以及联接到并位于护罩周围的卡环。 描述了包括阳极屏蔽的另一个DC磁控溅射系统; 包括至少一个凹部,空腔或其组合以及至少一个突起的阴极靶; 以及等离子体点火电弧,由此电弧位于阳极屏蔽和至少一个凹部,空腔或其组合之间的最小阻力点处,该至少一个突起或其组合。 本文描述了另一个DC磁控溅射系统,其包括包括至少一个突起的阳极屏蔽; 包括至少一个凹部,空腔或其组合的阴极靶; 和等离子体点火电弧,由此电弧位于耦合到阳极屏蔽的至少一个突起与至少一个突起,凹部或空腔之间的最小阻力点。 还提供了减轻气体紊流效应的方法,包括提供阳极屏蔽的方法; 提供阴极靶,其包括至少一个凹部,空腔或其组合以及至少一个突起; 以及启动等离子体点火电弧,由此所述电弧位于所述阳极屏蔽和所述至少一个凹部,空腔或其组合之间的最小阻力点处,所述至少一个突起或其组合。 附加方法包括提供阳极屏蔽; 提供包括至少一个侧壁的阴极靶; 提供耦合到屏蔽件周围的卡环; 并启动等离子体点火电弧。
    • 9. 发明授权
    • Use of DC magnetron sputtering systems
    • 使用直流磁控溅射系统
    • US08398833B2
    • 2013-03-19
    • US12988016
    • 2009-04-14
    • Eal H. LeeJaeyeon Kim
    • Eal H. LeeJaeyeon Kim
    • C23C14/35
    • C23C14/3407C23C14/35C23C14/564H01J37/3408H01J37/3426H01J37/3429H01J37/3435H01J37/3441
    • Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.
    • 公开了场增强溅射靶,其包括:芯材料; 和表面材料,其中所述芯材料或表面材料中的至少一个具有场强设计曲线,并且其中所述溅射靶包括基本均匀的侵蚀曲线。 还公开了包括场增强溅射靶的目标组装系统; 和阳极屏蔽。 此外,描述了在溅射靶上产生基本均匀的侵蚀的方法,其包括:提供阳极屏蔽; 提供阴极场增强目标; 并启动等离子体点火电弧,由此电弧位于阳极屏蔽和阴极场增强靶之间的最小电阻点。