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    • 1. 发明授权
    • Method and apparatus for reducing temperature-related spectrum shifts in
optical devices
    • 减少光学器件温度相关光谱偏移的方法和装置
    • US6137939A
    • 2000-10-24
    • US941976
    • 1997-10-01
    • Charles Howard HenryYuan P. Li
    • Charles Howard HenryYuan P. Li
    • G02B6/13G02B6/10G02B6/12G02B6/34
    • G02B6/12011G02B6/10G02B6/12028
    • The present invention teaches a novel technique for reducing the temperature-related spectrum shifts in optical devices, particularly waveguide grating routers (WGR). In general, the present invention modifies a portion of the length of at least one waveguide within an optical device in a manner that stabilizes the wavelength spectrum passing therethough even when exposed to temperature variations. More specifically, by knowing how the refractive index of a certain material changes with temperature variations as compared to that of common waveguide materials, such a silica, one may employ the teachings of the present invention to precisely modify the nature of the optical path through which a signal travels to fully compensate for any temperature-related wavelength spectrum shift. In other words, be able to produce an optical device with a plurality of waveguides each of which is appropriately modified so that any optical signal passing therethrough has the same wavelength at any two given temperatures.
    • 本发明教导了用于降低光学器件,特别是波导光栅路由器(WGR)中的温度相关光谱偏移的新技术。 通常,本发明以使得即使暴露于温度变化也能稳定通过其的波长光谱的方式,在光学器件内修改至少一个波导的长度的一部分。 更具体地说,通过了解某些材料的折射率如何随着温度变化而变化,与普通波导材料(例如二氧化硅)的折射率相比,可采用本发明的教导来精确地改变光路的性质, 信号行进以完全补偿任何与温度有关的波长频谱偏移。 换句话说,能够制造具有多个波导的光学器件,每个波导被适当地修改,使得通过其中的任何光信号在任何两个给定温度下具有相同的波长。
    • 4. 发明授权
    • Optimized waveguide structure
    • 优化波导结构
    • US5719976A
    • 1998-02-17
    • US547767
    • 1995-10-24
    • Charles Howard HenryEdward John LaskowskiYuan P. LiHenry Howard Yaffe
    • Charles Howard HenryEdward John LaskowskiYuan P. LiHenry Howard Yaffe
    • G02B6/30G02B6/12G02B6/122G02B6/126G02B6/34G02B6/26
    • G02B6/12009G02B6/12004G02B6/122G02B6/1228G02B2006/12119G02B2006/12169
    • An optimized waveguide structure enables the functional integration of various passive optic components on a single substrate. The optimized waveguide structure is characterized by a thicker core layer than used for square core waveguides and a core width that changes according to different functional regions of the optic circuit within which it is incorporated. The height (H) of the waveguide core is determined by the thickness of the core layer defined during the fabrication process and is ideally uniform across the circuit. The width (W) of the core, however, is changed between functional regions by the photo-lithographic mask and the chemical etching during the fabrication process. By way of example, an optimized waveguide structure for a P-doped silica planar waveguide with a .DELTA. approximately 0.6% for wavelength .lambda.=1.2-1.7 .mu.m, has a single uniform height of H=6.7 .mu.m and a width that changes between W=4 .mu.m in a coupler region, W=5.5 .mu.m in a bend region, W=9 .mu.m in a fiber coupling region, and W=10 .mu.m in a phase grating region of a Dragone router. Adiabatic tapers are used as transition regions between regions of different core widths.
    • 优化的波导结构使得能够在单个基板上的各种无源光学元件的功能集成。 优化的波导结构的特征在于比用于方芯波导的核心层更厚,并且根据其所结合的光电路的不同功能区域而变化的芯宽度。 波导芯的高度(H)由在制造过程中限定的芯层的厚度确定,并且在整个电路上理想地是均匀的。 然而,通过光刻掩模和制造过程中的化学蚀刻在功能区域之间改变芯的宽度(W)。 作为示例,用于波长λ=1.2-1.7μm的DELTA约0.6%的P掺杂二氧化硅平面波导的优化波导结构具有H =6.7μm的单一均匀高度,并且宽度在 在耦合器区域中W =4μm,在弯曲区域中W =5.5μm,在光纤耦合区域中W =9μm,在Dragone路由器的相位光栅区域中W =10μm。 绝热锥度用作不同芯宽的区域之间的过渡区域。
    • 6. 发明授权
    • Self-aligned mechanical M.times.N optical switch
    • 自对准机械MxN光开关
    • US5828800A
    • 1998-10-27
    • US880702
    • 1997-06-23
    • Charles Howard HenryHerman Melvin Presby
    • Charles Howard HenryHerman Melvin Presby
    • G02B6/38G02B6/12G02B6/13G02B6/26G02B6/35G02B26/08H04B10/02
    • G02B6/3508G02B6/13G02B6/26G02B2006/12195G02B6/3546G02B6/3588G02B6/3596
    • A mechanically stable self-aligned M.times.N optical switch having a low insertion loss is achieved by employing three cleaved silica optical structures containing a plurality of waveguides. A monolithic silica optical structure is cleaved into the three corresponding structures. Each of the first and third structures has a cleaved edge and a respective set of waveguides extending parallel to a corresponding structure surface. The second structure has two substantially parallel cleaved edges and a plurality of sets of waveguides extending parallel to a corresponding structure surface. The corresponding surfaces of the first, second and third structures are positioned on, for example, surfaces of respective first, second and third bases aligned in a common plane. The structures are further positioned with the cleaved edges of the second structure arranged adjacent to and facing respective ones of the cleaved edges of the first and third structures. In operation, the second structure is moveable in a direction along the cleaved edges relative to the first and third structures to selectively align different waveguide sets with the waveguides of the first and third structures to provide various different optical connections between the waveguide sets of the first and third structures.
    • 具有低插入损耗的机械稳定的自对准MxN光开关通过采用包含多个波导的三个切割二氧化硅光学结构来实现。 整体二氧化硅光学结构被切割成三个对应的结构。 第一和第三结构中的每一个具有切割边缘和平行于相应结构表面延伸的相应的一组波导。 第二结构具有两个基本上平行的切割边缘和平行于相应的结构表面延伸的多组波导。 第一,第二和第三结构的对应表面位于例如相应的第一,第二和第三底部的表面上,在相同的平面中对准。 结构进一步定位,其中第二结构的切割边缘布置成与第一和第三结构的切割边缘相邻并面对相应的切割边缘。 在操作中,第二结构可以沿着相对于第一和第三结构的切割边缘的方向移动,以选择性地将不同的波导组与第一和第三结构的波导对准,以在第一和第三结构的波导组之间提供各种不同的光学连接 和第三种结构。
    • 7. 发明授权
    • Quantum effects in heterostructure lasers
    • 异质结构激光器的量子效应
    • US3982207A
    • 1976-09-21
    • US556305
    • 1975-03-07
    • Raymond DingleCharles Howard Henry
    • Raymond DingleCharles Howard Henry
    • H01S5/343H01S3/00
    • B82Y20/00H01S5/34313H01S5/3432Y10S148/067Y10S148/169
    • Described is a heterostructure semiconductor laser comprising a pair of wide bandgap layers having an active region sandwiched therebetween characterized in that the active region includes a plurality of thin narrow bandgap active layers interleaved with a plurality of thin relatively wider bandgap passive layers. The passive layers are thin enough (e.g., about 10-500 Angstroms) to permit electrons to distribute among the active layers either by tunneling through, or by hopping over, the energy barriers created by the passive layers. The active layers are thin enough (e.g., about 10-500 Angstroms) to separate the quantum levels of electrons confined therein. These lasers exhibit wavelength tunability by changing the thickness of the active layers. Also described is the possibility of threshold reductions resulting from modification of the density of electron states.
    • 描述了一种异质结构半导体激光器,其包括一对夹在其间的有源区的宽带隙层,其特征在于有源区包括与多个薄的较宽带隙无源层交错的多个窄窄带隙有源层。 无源层足够薄(例如约10-500埃),以允许电子在有源层之间通过隧道穿过或通过跳过由无源层产生的能量障碍来分布。 有源层足够薄(例如,约10-500埃)以分离限制在其中的电子的量子水平。 这些激光器通过改变有源层的厚度来展现波长可调性。 还描述了由修改电子态的密度导致的阈值减小的可能性。