专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06908846B2 Method and apparatus for detecting endpoint during plasma etching of thin films 有权
标题翻译：用于在薄膜等离子体蚀刻期间检测端点的方法和装置
公开(公告)号：US06908846B2
公开(公告)日：2005-06-21
申请号：US10401114
申请日：2003-03-27
申请人： Brian K. McMillin , Eric Hudson , Jeffrey Marks
发明人： Brian K. McMillin , Eric Hudson , Jeffrey Marks
IPC分类号： H01L21/311 , H01L21/66 , H01L21/768 , H01L21/4763 , H01L21/302 , H01L23/48
CPC分类号： H01L21/76829 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/76801 , H01L21/76807 , H01L22/26
摘要： A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.
摘要翻译：公开了一种用于在蚀刻具有设置在端点产生层上方的第一层的层堆叠的同时控制等离子体蚀刻工艺的方法。该方法包括：在监测穿过等离子体处理室的内部部分的光束的吸收率的同时，蚀刻穿过第一层并且至少部分地穿过端点产生层，其中端点产生层选自材料其在蚀刻时产生可检测的吸收速率变化。端点产生层的特征在于第一特征和第二特性中的至少一个。第一特征是不足以用作蚀刻停止层的厚度，并且第二特性对于用于蚀刻通过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。该方法还包括在检测到可检测变化时产生端点信号。

2. 发明授权

US10622195B2 Multi zone gas injection upper electrode system 有权
公开(公告)号：US10622195B2
公开(公告)日：2020-04-14
申请号：US13438473
申请日：2012-04-03
申请人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
发明人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
IPC分类号： B23K9/00 , H01J37/32 , H01L21/67
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.

3. 发明授权

US10149463B2 Multi-section fishing device 有权
公开(公告)号：US10149463B2
公开(公告)日：2018-12-11
申请号：US15499273
申请日：2017-04-27
申请人： Eric Hudson
发明人： Eric Hudson , Van Lee
IPC分类号： A01K85/00 , A01K85/18 , A01K91/06
摘要： A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.

4. 发明授权

US09655353B1 Multi-section fishing device 有权
公开(公告)号：US09655353B1
公开(公告)日：2017-05-23
申请号：US15079587
申请日：2016-03-24
申请人： Eric Hudson
发明人： Eric Hudson , Van Lee
IPC分类号： A01K85/00 , A01K85/18
CPC分类号： A01K85/18 , A01K85/00 , A01K91/06
摘要： A device for use during fishing configured to be connected to the user's fishing line to attract fish. The device is shaped to be moved through the water and generally include a head and a tail. A channel extends through at least a portion of the device and is sized to receive the fishing line. The device is constructed from multiple sections. The sections are selectively positionable between a closed configuration with the sections connected together to connect the device to the fishing line, and an open configuration with the sections being separated to remove the device from the fishing line.

5. 发明授权

US09287096B2 Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system 有权
标题翻译：用于混合电容耦合和电感耦合等离子体处理系统的方法和装置
公开(公告)号：US09287096B2
公开(公告)日：2016-03-15
申请号：US12237179
申请日：2008-09-24
申请人： Alexei Marakhtanov , Eric Hudson , Rajinder Dhindsa , Neil Benjamin
发明人： Alexei Marakhtanov , Eric Hudson , Rajinder Dhindsa , Neil Benjamin
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32532 , H01J37/3266 , H01J37/32669 , H01J2237/332 , H01J2237/334
摘要： A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.
摘要翻译：提供具有用于处理衬底的等离子体处理室的电容耦合等离子体（CCP）处理系统。电容耦合等离子体（CCP）处理系统包括用于处理衬底的上电极和下电极，其在等离子体处理期间设置在下电极上。电容耦合等离子体（CCP）处理系统还包括电感线圈布置阵列，其被配置为在上电极和下电极之间的间隙中感应维持等离子体。

6. 发明授权

US09117767B2 Negative ion control for dielectric etch 有权
标题翻译：负离子控制电介质蚀刻
公开(公告)号：US09117767B2
公开(公告)日：2015-08-25
申请号：US13188421
申请日：2011-07-21
申请人： Alexei Marakhatanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhatanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01J37/02 , H01J37/32 , C23C14/34 , C23C16/505 , H01L21/311 , H01L21/67 , H05H1/46
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加到晶片表面的负离子通量。

7. 发明授权

US08869741B2 Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber 有权
标题翻译：在可调间隙等离子体室中双重限制和超高压的方法和装置
公开(公告)号：US08869741B2
公开(公告)日：2014-10-28
申请号：US12368843
申请日：2009-02-10
申请人： Andreas Fischer , Eric Hudson
发明人： Andreas Fischer , Eric Hudson
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01L21/306 , C23F1/00 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32091 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/3299 , H01L21/3065
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.
摘要翻译：提供了一种等离子体处理系统，其具有用于处理基板的等离子体处理室。等离子体处理系统至少包括用于处理衬底的上电极和下电极。在等离子体处理期间，衬底设置在下电极上，其中上电极和衬底形成第一间隙。等离子体处理系统还包括上电极周边延伸（UE-PE）。 UE-PE机械地耦合到上电极的周边，其中UE-PE被配置为与上电极非共面。等离子体处理系统还包括盖环。盖环被配置为同心地围绕下电极，其中UE-PE和盖环形成第二间隙。

8. 发明申请

US20140054268A1 Electronic Knob for Tuning Radial Etch Non-Uniformity at VHF Frequencies 有权
标题翻译：用于调谐VHF频率径向蚀刻非均匀性的电子旋钮
公开(公告)号：US20140054268A1
公开(公告)日：2014-02-27
申请号：US13594768
申请日：2012-08-24
申请人： Zhigang Chen , Eric Hudson
发明人： Zhigang Chen , Eric Hudson
IPC分类号： H05H1/46 , B44C1/22
CPC分类号： H01L21/70 , H01J37/32091 , H01J37/32183
摘要： System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated to the electrode via a conductive delivery connection and returned through a conductive return connection. A capacitance is applied to a first end that causes appropriate capacitive adjustment and opposite impedance adjustment at a second end of the conductive delivery connection that is coupled to a dielectric surround structure that surrounds the electrode. The dielectric surround structure presents the opposite impedance adjustment near an outer edge of the electrode, such that increasing the capacitance at the first end causes a corresponding increase of impedance at the second end and a corresponding increase in voltage distribution near the outer edge region of the electrode that decreases toward a center of the support surface of the electrode.
摘要翻译：用于等离子体处理晶片的系统和方法包括具有电极的室，其具有支撑表面和限定在其上的外边缘区域。射频功率通过导电输送连接传送到电极，并通过导电返回连接返回。电容被施加到第一端，其导致适当的电容调整，并且在导电输送连接的第二端处相反阻抗调节，该第二端耦合到围绕电极的电介质环绕结构。电介质环绕结构在电极的外边缘附近呈现相反的阻抗调节，使得增加第一端处的电容导致在第二端处的阻抗相应增加，并且在外部边缘区域附近的电压分布相应增加电极朝向电极的支撑表面的中心减小。

9. 发明授权

US08635971B2 Tunable uniformity in a plasma processing system 有权
标题翻译：等离子体处理系统的可调均匀性
公开(公告)号：US08635971B2
公开(公告)日：2014-01-28
申请号：US11393753
申请日：2006-03-31
申请人： Eric Hudson
发明人： Eric Hudson
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05H1/00
CPC分类号： H01J37/32082 , H01J37/32321 , H01J37/32339
摘要： A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources. The source can be arranged to provide substantively uniform illumination, or can illuminate according to a non-uniform intensity distribution to compensate for existing non-uniformities in the plasma density or in the plasma process. Such sources can be embedded in the inner or outer electrode part of a multi-piece showerhead electrode assembly, or elsewhere in the chamber.
摘要翻译：提供了通过局部影响等离子体的密度来调整具有大鞘电位的等离子体的均匀性的方法。该方法包括用来自源的电磁辐射来照射暴露于等离子体的物体，其中主体和源被协同地配置，使得当暴露于来自源的辐射时，主体将产生光电子。这种电磁辐射的一个例子是真空紫外线，这样的一个实例是包围半导体衬底的边缘环。从边缘环发射的光电子由等离子体捕获并以足够的能量加速到等离子体中以引起电离，局部地增加等离子体密度。辐射源可以是多个离散源或一个或多个扩展源。源可以被布置为提供实质上均匀的照明，或者可以根据不均匀的强度分布照亮以补偿等离子体密度或等离子体处理中现有的不均匀性。这样的源可以嵌入在多件式喷头电极组件的内部或外部电极部分中，或者室内的其他地方。

10. 发明授权

US08478548B2 User interface system and method for diagnosing a rotating machine condition not based upon prior measurement history 有权
标题翻译：用户界面系统和方法，用于诊断不基于先前测量历史的旋转机器状态
公开(公告)号：US08478548B2
公开(公告)日：2013-07-02
申请号：US12688736
申请日：2010-01-15
申请人： Eric Hudson , Demet Namli , Rand Peterson , Joseph Ferrante
发明人： Eric Hudson , Demet Namli , Rand Peterson , Joseph Ferrante
IPC分类号： G01M13/02
CPC分类号： G01M99/005 , G01H1/003 , G01M13/028 , G01M13/045 , G05B23/0245
摘要： A vibration data collection and rotating machinery fault diagnostic instrument includes a machine setup engine, a measurement engine, a diagnostic engine, a measurement user interface module, a machine setup user interface module, and a diagnostic user interface module. The machine setup engine requests and receives parameters about the machinery through the machine setup user interface module. The measurement engine requests and receives sensor placement locations through the measurement user interface module and keeps track of locations that have been measured and locations that still need to be measured. The diagnostic engine diagnoses machinery faults and presents the information to the user through the diagnostic user interface module using an intuitive graphical severity scale.
摘要翻译：振动数据采集和旋转机械故障诊断仪器包括机器设置引擎，测量引擎，诊断引擎，测量用户界面模块，机器设置用户界面模块和诊断用户界面模块。机器设置引擎通过机器设置用户界面模块来请求并接收关于机器的参数。测量引擎通过测量用户界面模块请求并接收传感器放置位置，并跟踪已测量的位置和仍需要测量的位置。诊断引擎诊断机械故障，并通过诊断用户界面模块使用直观的图形严重性量表将信息提供给用户。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式