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1. 发明授权

US06692649B2 Inductively coupled plasma downstream strip module 有权
公开(公告)号：US06692649B2
公开(公告)日：2004-02-17
申请号：US09765920
申请日：2001-01-18
申请人： Wenli Z. Collison , Michael S. Barnes , Tuqiang O. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
发明人： Wenli Z. Collison , Michael S. Barnes , Tuqiang O. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.

2. 发明授权

US06508913B2 Gas distribution apparatus for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配装置
公开(公告)号：US06508913B2
公开(公告)日：2003-01-21
申请号：US09983680
申请日：2001-10-25
申请人： Brian K. McMillin , Robert Knop
发明人： Brian K. McMillin , Robert Knop
IPC分类号： C23F100
CPC分类号： H01L21/67253 , C23F4/00 , G05D11/132 , H01L21/67017 , H01L21/67069 , Y10S438/935
摘要： A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines.
摘要翻译：用于处理半导体衬底的气体分配系统包括多个气体供应，其中来自多个气体源的气体混合在一起的混合歧管，将混合气体输送到室中的不同区域的多个气体供应管线，以及控制阀。气体供应管线包括将混合气体输送到室中的第一区域的第一气体供应管线和将混合气体输送到室中的第二区域的第二气体供应管线。控制阀控制第一和/或第二气体供给管线中的混合气体的流量，使得在第一和第二气体供应管线中实现混合气体的所需流量比。

3. 发明授权

US07053994B2 Method and apparatus for etch endpoint detection 有权
标题翻译：用于蚀刻端点检测的方法和设备
公开(公告)号：US07053994B2
公开(公告)日：2006-05-30
申请号：US10696628
申请日：2003-10-28
申请人： Brian K. McMillin , Francois Chandrasekar Dassapa
发明人： Brian K. McMillin , Francois Chandrasekar Dassapa
IPC分类号： G01N21/00
CPC分类号： G01N21/68 , G01J3/02 , G01J3/0229 , G01J3/443 , H01J37/32963
摘要： Broadly speaking, an invention is provided for monitoring a plasma optical emission. More specifically, the present invention provides a method for monitoring the plasma optical emission through a variable aperture to detect an endpoint of a plasma etching process without interferences that could lead to false endpoint calls. The method includes collecting optical emission data from a plasma through an aperture defined by moveable members. The moveable members are capable of varying a configuration of the aperture. The method also includes holding the moveable members at a particular time to cause the aperture to maintain a fixed configuration. The method further includes detecting a specific perturbation in the plasma optical emission while holding the moveable members.
摘要翻译：概括地说，提供了一种用于监测等离子体光发射的发明。更具体地，本发明提供了一种用于通过可变孔径监测等离子体光发射以检测等离子体蚀刻过程的端点的方法，而不会导致虚假端点呼叫的干扰。该方法包括通过由可移动构件限定的孔收集来自等离子体的光发射数据。可移动构件能够改变孔径的构造。该方法还包括在特定时间保持可移动构件以使孔保持固定构型。该方法还包括在保持可移动构件的同时检测等离子体光发射中的特定扰动。

4. 发明授权

US06333272B1 Gas distribution apparatus for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配装置
公开(公告)号：US06333272B1
公开(公告)日：2001-12-25
申请号：US09680319
申请日：2000-10-06
申请人： Brian K. McMillin , Robert Knop
发明人： Brian K. McMillin , Robert Knop
IPC分类号： H01L21302
CPC分类号： H01L21/67253 , C23F4/00 , G05D11/132 , H01L21/67017 , H01L21/67069 , Y10S438/935
摘要： A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying the mixed gas to the first and second zones, the control valve being adjusted such that a rate of flow of the mixed gas in the first and/or second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and second zones.
摘要翻译：用于处理半导体衬底的气体分配系统包括多个气体供应，其中来自多个气体源的气体混合在一起的混合歧管，将混合气体输送到室中的不同区域的多个气体供应管线，以及控制阀。气体供应管线包括将混合气体输送到室中的第一区域的第一气体供应管线和将混合气体输送到室中的第二区域的第二气体供应管线。控制阀控制第一和/或第二气体供给管线中的混合气体的流量，使得在第一和第二气体供应管线中实现混合气体的所需流量比。在使用该装置的方法中，将半导体基板供给到反应室，并且通过将混合气体供给到第一和第二区域来处理基板，调节控制阀使得混合气体的流量第一和/或第二气体供应管线提供混合气体在第一和第二区域中的期望流量比。

5. 发明授权

US06203657B1 Inductively coupled plasma downstream strip module 失效
标题翻译：电感耦合等离子体下游带模块
公开(公告)号：US06203657B1
公开(公告)日：2001-03-20
申请号：US09052906
申请日：1998-03-31
申请人： Wenli Z. Collison , Michael S. Barnes , Tuqiang Q. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
发明人： Wenli Z. Collison , Michael S. Barnes , Tuqiang Q. Ni , Butch Berney , Wayne W. Vereb , Brian K. McMillin
IPC分类号： C23F102
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.
摘要翻译：用于处理衬底的等离子体处理模块包括等离子体容纳室，其具有能够在衬底处理期间允许进料气体进入等离子体处理模块的等离子体容纳室的进料气体入口。电感耦合源用于对进料气体进行激励并且在等离子体容纳室内打入等离子体。电感耦合源的特定配置导致形成等离子体，使得等离子体包括等离子体容纳室内的主离解区。二级室通过等离子体容纳板与等离子体容纳室分离。次级室包括卡盘和排气口。卡盘被配置为在基板的处理期间支撑基板，并且排气口连接到副室，使得排气口允许在基板的处理期间从第二室中除去气体。室互连端口将等离子体容纳室和次室互连。腔室互连端口允许来自等离子体容纳室的气体在衬底的处理期间流入次室。腔室互连端口位于等离子体容纳室和次级室之间，使得当衬底定位在次级室中的卡盘上时，基底没有相当大的直接视线暴露于初级解离区的等离子体容纳室内形成的等离子体。

6. 发明授权

US08440473B2 Use of spectrum to synchronize RF switching with gas switching during etch 有权
标题翻译：在蚀刻期间使用频谱来同步RF切换与气体切换
公开(公告)号：US08440473B2
公开(公告)日：2013-05-14
申请号：US13154075
申请日：2011-06-06
申请人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
发明人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
IPC分类号： H01L21/00
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动的沉积气体进入等离子体处理室。提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止蚀刻气体流入等离子体处理室。

7. 发明授权

US6142163A Method and apparatus for pressure control in vacuum processors 失效
标题翻译：真空处理器中压力控制的方法和装置
公开(公告)号：US6142163A
公开(公告)日：2000-11-07
申请号：US53530
申请日：1998-03-31
申请人： Brian K. McMillin , Farro F. Kaveh , Michael S. Barnes
发明人： Brian K. McMillin , Farro F. Kaveh , Michael S. Barnes
IPC分类号： G05D16/20 , F16K17/34 , F17D1/16
CPC分类号： G05D16/2013 , Y10T137/0396 , Y10T137/2572 , Y10T137/7761
摘要： A method and apparatus is disclosed for controlling the pressure of a reaction chamber in wafer processing equipment. The disclosed apparatus and method uses a ballast port for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve which is located between the reaction chamber and turbo pump. The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delay for a pre-specified period.
摘要翻译：公开了一种用于控制晶片加工设备中的反应室的压力的方法和装置。所公开的装置和方法使用用于将气体插入抽空系统中的压载端口，从而控制反应室中的压力。所公开的装置和方法还使用估计曲线来估计位于反应室和涡轮泵之间的受控闸阀的期望位置。所公开的装置和方法通过使用比例和积分控制基于测量压力和设定点压力之间的差异来预先设定节流阀，然后重新定位节流阀来实现设定点压力，其中积分控制的启用是预先的延迟规定期

8. 发明授权

US07027773B1 On/off keying node-to-node messaging transceiver network with dynamic routing and configuring 有权
标题翻译：具有动态路由和配置的开/关键控节点到节点消息收发器网络
公开(公告)号：US07027773B1
公开(公告)日：2006-04-11
申请号：US09578237
申请日：2000-05-24
申请人： Brian K. McMillin
发明人： Brian K. McMillin
IPC分类号： H04B5/00
CPC分类号： H04W40/02 , H04L1/1657 , H04L45/00 , H04W88/04 , Y02D70/122 , Y02D70/142 , Y02D70/164 , Y02D70/168 , Y02D70/26 , Y02D70/30
摘要： The invention is a system operating on a reference frequency. The system comprises a plurality of at least three nodes. Each node hands off a message received from another node to a subsequent node. Each of the nodes comprises a transceiver receiving a message on the reference frequency from another node and transmitting the received message on the reference frequency to a subsequent node, and a controller controlling operation of the transceiver to receive the.. message transmitted by another node and to transmit the received message to a subsequent node.
摘要翻译：本发明是以参考频率工作的系统。该系统包括多个至少三个节点。每个节点将从另一个节点接收的消息交给后续节点。每个节点包括收发器，其从另一节点接收参考频率上的消息，并将参考频率上接收到的消息发送到后续节点，以及控制器控制收发器的操作以接收由另一个节点发送的消息; 以将接收到的消息发送到后续节点。

9. 发明申请

US20120309198A1 USE OF SPECTRUM TO SYNCHRONIZE RF SWITCHING WITH GAS SWITCHING DURING ETCH 有权
标题翻译：在ETCH期间使用与燃气切换同步射频切换的频谱
公开(公告)号：US20120309198A1
公开(公告)日：2012-12-06
申请号：US13154075
申请日：2011-06-06
申请人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
发明人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
IPC分类号： H01L21/302 , H01L21/3065 , C23F1/08
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动的沉积气体进入等离子体处理室。提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止蚀刻气体流入等离子体处理室。

10. 发明授权

US07653394B2 Node-to node messaging transceiver network with dynamic routing and configuring 有权
标题翻译：具有动态路由和配置的节点到节点消息收发器网络
公开(公告)号：US07653394B2
公开(公告)日：2010-01-26
申请号：US11144176
申请日：2005-06-03
申请人： Brian K. McMillin
发明人： Brian K. McMillin
IPC分类号： H04Q7/20 , H04B1/44 , H04W4/00
CPC分类号： H04W88/04 , H04L45/00 , H04L51/38 , H04W40/06 , H04W40/10 , H04W40/20 , H04W40/248 , H04W40/30 , Y02D70/122 , Y02D70/142 , Y02D70/164 , Y02D70/168 , Y02D70/21 , Y02D70/24 , Y02D70/26 , Y02D70/322 , Y02D70/326 , Y02D70/38
摘要： The invention is a system operating on a reference frequency. The system comprises a plurality of at least three nodes. Each node hands off a message received from another node to a subsequent node. Each of the nodes comprises a transceiver receiving a message on the reference frequency from another node and transmitting the received message on the reference frequency to a subsequent node, and a controller controlling operation of the transceiver to receive the message transmitted by another node and to transmit the received message to a subsequent node.
摘要翻译：本发明是以参考频率工作的系统。该系统包括多个至少三个节点。每个节点将从另一个节点接收的消息交给后续节点。每个节点包括收发机，从另一个节点接收参考频率上的消息，并将参考频率上的接收到的消息发送到后续节点;以及控制器，控制收发器的操作，以接收由另一个节点发送的消息并传送接收到的消息到后续节点。

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