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1. 发明申请

US20120322011A1 METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES 有权
标题翻译：用于执行多个光电层发展和蚀刻过程的方法和装置
公开(公告)号：US20120322011A1
公开(公告)日：2012-12-20
申请号：US13455784
申请日：2012-04-25
申请人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
IPC分类号： G03F7/36
CPC分类号： G03F7/36 , G03F7/40
摘要： The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.
摘要翻译：本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物，通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

2. 发明授权

US08709706B2 Methods and apparatus for performing multiple photoresist layer development and etching processes 有权
标题翻译：用于进行多个光致抗蚀剂层显影和蚀刻工艺的方法和装置
公开(公告)号：US08709706B2
公开(公告)日：2014-04-29
申请号：US13455784
申请日：2012-04-25
申请人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
IPC分类号： G03F7/26
CPC分类号： G03F7/36 , G03F7/40
摘要： The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.
摘要翻译：本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物，通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

3. 发明申请

US20130224665A1 ATOMIC LAYER DEPOSITION LITHOGRAPHY 有权
标题翻译：原子层沉积法
公开(公告)号：US20130224665A1
公开(公告)日：2013-08-29
申请号：US13762446
申请日：2013-02-08
申请人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
IPC分类号： G03F7/16
CPC分类号： G03F7/16 , G03F7/0035 , G03F7/165 , G03F7/167
摘要： Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.
摘要翻译：在本公开中提供了用于执行原子层沉积光刻工艺的方法和装置。在一个实施例中，用于在器件中的材料层上形成特征的方法包括将第一反应气体混合物脉动到设置在处理室中的衬底的表面，以在衬底表面上形成材料层的第一单层，高能辐射以处理第一单层的第一区域，以及将第二反应气体混合物脉冲至衬底表面以在第一单层的第二区域上选择性地形成第二单层。

4. 发明申请

US20140045103A1 METHODS FOR CONTROLLING DEFECTS FOR EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) PHOTOMASK SUBSTRATE 有权
标题翻译：控制超极紫外光刻（EUVL）光电子基板缺陷的方法
公开(公告)号：US20140045103A1
公开(公告)日：2014-02-13
申请号：US13774010
申请日：2013-02-22
申请人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/22 , G03F1/60
摘要： Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.
摘要翻译：提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

5. 发明申请

US20120318773A1 METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL 审中-公开
标题翻译：用于控制光电子束宽度粗糙度的方法和装置，具有增强的电子旋转控制
公开(公告)号：US20120318773A1
公开(公告)日：2012-12-20
申请号：US13455753
申请日：2012-04-25
申请人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
IPC分类号： B44C1/22 , B05C13/00
CPC分类号： H01J37/32669 , H01J37/32009 , H01J37/32422 , H01J37/3244 , H01L21/0273 , H01L21/31144
摘要： The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.
摘要翻译：本发明提供了通过增强的电子纺丝控制来控制和修改光致抗蚀剂层的线宽粗糙度（LWR）的方法和装置。在一个实施例中，用于控制设置在基板上的光致抗蚀剂层的线宽粗糙度的装置包括处理室，该处理室具有室主体，该室主体具有限定内部处理区域的顶壁，侧壁和底壁，处理室的内部处理区域和设置在处理室中的等离子体发生器源，其可操作以主要向内部处理区域提供电子束源。

6. 发明授权

US08962224B2 Methods for controlling defects for extreme ultraviolet lithography (EUVL) photomask substrate 有权
标题翻译：用于控制极紫外光刻（EUVL）光掩模基板的缺陷的方法
公开(公告)号：US08962224B2
公开(公告)日：2015-02-24
申请号：US13774010
申请日：2013-02-22
申请人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Omkaram Nalamasu
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/22 , G03F1/60
摘要： Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.
摘要翻译：提供了用于在光掩模衬底表面上提供硅层的方法，其中用于在EUVL应用中制造膜堆叠的最小失败。在一个实施例中，在光掩模衬底上形成硅层的方法包括在第一衬底的表面上执行氧化处理以形成氧化硅层，其中第一衬底包括结晶硅材料，执行离子注入工艺以界定在第一衬底中的解理面，并将氧化硅层接合到第二衬底的表面，其中第二衬底是石英光掩模。

7. 发明申请

US20140065797A1 IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH 审中-公开
标题翻译：用于激光扫描和等离子体蚀刻的器件结合的现场沉积掩模层
公开(公告)号：US20140065797A1
公开(公告)日：2014-03-06
申请号：US14072653
申请日：2013-11-05
申请人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
发明人： Madhava Rao Yalamanchili , Wei-Sheng Lei , Brad Eaton , Saravjeet Singh , Ajay Kumar , Banqiu Wu
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/30655 , H01L21/3086 , H01L21/67207
摘要： Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.
摘要翻译：通过激光划线和等离子体蚀刻来切割基板的方法。一种方法包括通过累积等离子体沉积聚合物的厚度来形成具有等离子体蚀刻室的原位掩模，以保护IC凸起表面免于随后的等离子体蚀刻。可以与等离子体沉积的聚合物一起使用第二掩模材料，例如水溶性掩模材料。用飞秒激光划线工艺对掩模的至少一部分进行图案化以提供具有沟槽的图案化掩模。在IC之间的衬底的图案化曝光区域中，其中衬底被等离子体蚀刻以分离IC和水溶性材料层被洗掉。

8. 发明授权

US08002899B2 Method and apparatus for mask pellicle adhesive residue cleaning 失效
标题翻译：面具防护薄膜胶粘剂残留物清洗方法和装置
公开(公告)号：US08002899B2
公开(公告)日：2011-08-23
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

9. 发明申请

US20100078039A1 METHOD AND APPRATUS FOR MASK PELLICLE ADHESIVE RESIDUE CLEANING 失效
标题翻译：用于胶粘剂粘合剂残留清洁的方法和设备
公开(公告)号：US20100078039A1
公开(公告)日：2010-04-01
申请号：US12242472
申请日：2008-09-30
申请人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
发明人： Banqiu Wu , Richard Lee , M. Rao Yalamanchili , Ajay Kumar , James S. Papanu , Chung-Huan Jeon
IPC分类号： B08B1/04 , B01J19/08 , A46B9/02 , A46B11/06
CPC分类号： B08B3/02 , B08B1/00 , B08B11/02 , G03F1/82 , Y10S134/902
摘要： Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate.
摘要翻译：本发明的方面通常提供用于清洁光掩模基底上的粘合剂残留物的方法和装置。在一个实施例中，该设备包括处理单元，配置成接收布置在其上设置在处理单元中的光掩模基板的支撑组件，设置在支撑组件上方并面向支撑组件的保护头组件，以及头部致动器，保护头组件相对于支撑组件的上表面。提供清洁装置并定位成与设置在支撑组件上的光掩模基板相互作用。在另一个实施例中，一种清洁光掩模基板的外围区域的方法包括提供具有周边部分的光掩模基板和设置在处理单元中的支撑组件上的中心部分，降低设置在处理单元中的保护盖以覆盖在光掩模基板的中心部分，在处理单元中提供刷子以清洁光掩模基板的周边部分。

10. 发明申请

US20080070128A1 METHOD OF ETCHING EXTREME ULTRAVIOLET LIGHT (EUV) PHOTOMASKS 有权
标题翻译：蚀刻极光紫外光（EUV）光电子的方法
公开(公告)号：US20080070128A1
公开(公告)日：2008-03-20
申请号：US11532280
申请日：2006-09-15
申请人： Banqiu Wu , Madhavi R. Chandrachood , Ajay Kumar
发明人： Banqiu Wu , Madhavi R. Chandrachood , Ajay Kumar
IPC分类号： G03F1/00 , B44C1/22
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00
摘要： Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.
摘要翻译：本文提供了蚀刻EUV光掩模的方法的实施例。在一个实施例中，蚀刻极紫外光掩模的方法包括提供包括依次包括基底，多材料层，覆盖层和多层吸收层的光掩模，所述多层吸收层包括自对准层，掩模层，其设置在体吸收层上，其中所述自掩模层包括钽和氧，并且所述本体吸收层包括钽并且基本上不含氧; 使用第一蚀刻工艺蚀刻自掩模层; 以及使用不同于第一蚀刻工艺的第二蚀刻工艺来蚀刻体吸收体层，其中本体吸收体层的蚀刻速率大于在第二蚀刻工艺期间自掩模层的蚀刻速率。

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