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1. 发明授权

US5708352A A.C. Generator for vehicles 失效
标题翻译：交通工具发电机
公开(公告)号：US5708352A
公开(公告)日：1998-01-13
申请号：US756514
申请日：1996-11-26
申请人： Atsushi Umeda , Masatoshi Togawa , Junji Kawai , Hirohide Sato , Norihito Tokura
发明人： Atsushi Umeda , Masatoshi Togawa , Junji Kawai , Hirohide Sato , Norihito Tokura
IPC分类号： B60L11/02 , H01L29/24 , H01L29/78 , H02J7/24 , H02P9/30 , H02P9/38 , H02P9/48 , H02H7/06
CPC分类号： B60L11/02 , H02J7/248 , H02P9/305 , H02P9/38 , H02P9/48 , H01L29/1608 , H01L29/7813 , H02P2101/45 , Y02T10/642 , Y02T10/70 , Y02T10/7077
摘要： An alternating current generator for motor vehicles having an extremely small power loss and which can be simply cooled includes a power converter having at least either high side semiconductor power elements or low side semiconductor elements. The high side power elements connect an output terminal of the armature coil to a high potential terminal of the battery; the low side semiconductor power elements connect an output terminal of the armature coil to a low potential terminal of the battery. The power converter converts the alternating current generated voltage of the armature coil into a direct current voltage to supply electricity to the battery. An exciting current controller includes a switching transistor for controlling an exciting current to a field coil. The semiconductor power elements in the power converter and/or the switching transistor in the exciting current controller are/is formed of SiC material, which is a compound of Si and C, having a resistivity smaller than that of pure Si.
摘要翻译：用于机动车辆的交流发电机具有非常小的功率损耗并且可以被简单地冷却包括具有至少高边半导体功率元件或低侧半导体元件的功率转换器。高侧功率元件将电枢线圈的输出端子连接到电池的高电位端子; 低侧半导体功率元件将电枢线圈的输出端子连接到电池的低电位端子。电力转换器将电枢线圈的交流发电电压转换为直流电压以向电池供电。励磁电流控制器包括用于控制到励磁线圈的励磁电流的开关晶体管。功率转换器中的半导体功率元件和/或励磁电流控制器中的开关晶体管由具有比纯Si的电阻率小的Si和C的化合物的SiC材料形成。

2. 发明授权

US5543703A Generator motor for vehicles 失效
标题翻译：汽车发电机
公开(公告)号：US5543703A
公开(公告)日：1996-08-06
申请号：US362408
申请日：1994-12-23
申请人： Shin Kusase , Kenzo Mitani , Atsushi Umeda , Norihito Tokura , Hirohide Sato
发明人： Shin Kusase , Kenzo Mitani , Atsushi Umeda , Norihito Tokura , Hirohide Sato
IPC分类号： F02N11/04 , H01L29/78 , H02J7/14 , H02K29/00 , H02M7/219 , H02P9/04 , H02P9/48 , H02P6/00
CPC分类号： H01L29/7813 , H01L29/7803 , H02J7/1492 , H02M7/219 , H02P9/48 , H01L29/1608 , H01L29/45 , H02P2101/45 , Y02T10/92
摘要： A vehicular generator motor performing generator operation and motor operation is disclosed. The generator motor comprises an AC-DC converter means and a switching means. The converter means is composed of a plurality of MOSFETs and connected between each armature coil and a vehicular storage battery. Alternating current produced across the coils is converted into a direct current for charging the battery by the AC-DC converter means in generator operation mode. In motor operation mode, the DC output from the battery is converted into an alternating current for setting up a rotating magnetic field by the converter means, and the battery output is fed to the armature coils. The mode of operation of the MOSFETs is switched between these two modes by the switching means. The rotating field produces a certain phase difference with the magnetic field developed by the rotating magnetic poles. The MOSFETs are made of SiC having a smaller resistivity than that of Si. This ensures a high withstand voltage necessary during power generation. Loss caused by large current flowing in the motor operation mode is reduced. Good driving torque can be obtained.
摘要翻译：公开了一种执行发电机运行和电动机运行的车辆发电机。发电机电动机包括AC-DC转换器装置和开关装置。转换器装置由多个MOSFET构成，并连接在每个电枢线圈和车辆蓄电池之间。在线圈中产生的交流电流被转换成用于通过AC-DC转换器装置在发电机运行模式下为电池充电的直流电流。在电动机运转模式下，电池的直流输出转换为交流电，用于通过转换装置设置旋转磁场，电池输出被馈送到电枢线圈。通过开关装置在这两种模式之间切换MOSFET的工作模式。旋转磁场与由旋转磁极产生的磁场产生一定的相位差。 MOSFET的电阻率比Si的电阻率小，由SiC制成。这确保在发电期间所需的高耐受电压。电动机运转模式中流过的大电流引起的损耗减少。可获得良好的驱动力矩。

3. 发明授权

US5608616A Power converter 失效
标题翻译：电源转换器
公开(公告)号：US5608616A
公开(公告)日：1997-03-04
申请号：US351027
申请日：1994-12-07
申请人： Atsushi Umeda , Norihito Tokura , Hirohide Sato
发明人： Atsushi Umeda , Norihito Tokura , Hirohide Sato
IPC分类号： H01L29/24 , H01L29/45 , H01L29/78 , H02J7/14 , H02K1/22 , H02K11/04 , H02K21/04 , H02M7/00 , H01L29/10
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/7803 , H02J7/1492 , H02K11/046 , H02M7/003 , H01L29/45 , Y02T10/92
摘要： A power converter for an AC generator for motor vehicles for converting a generated voltage of the AC generator driven by an engine into a DC voltage to feed to a battery includes at least either high-side MOS power transistors for connecting an output end of an armature coil which generates the generated voltage of the AC generator with a high potential end of a battery or low-side MOS power transistors for connecting the output end of the armature coil with a low potential end of the battery. The MOS power transistors each has a source region, a well region and a drain region. A high resistance connected with either a parasitic diode on the side connected with the source generated between the source region and well region or a parasitic diode on the side connected with the drain generated between the drain region and well region in parallel is formed in the MOS power transistors. Thereby, it allows blocking a reverse current produced by the parasitic diode and giving a necessary potential to the well region. Further, SiC is used in the MOS power transistors rather than Si.
摘要翻译：一种用于机动车辆的交流发电机的电力转换器，用于将由发动机驱动的交流发电机的发电电压转换为直流电压以供电至电池，至少包括用于连接电枢的输出端的高侧MOS功率晶体管线圈，其产生具有用于将电枢线圈的输出端与电池的低电位端连接的电池或低侧MOS功率晶体管的高电位端的交流发电机的发电电压。 MOS功率晶体管各自具有源极区，阱区和漏极区。在源极区域和阱区域之间产生的与源极连接的一侧的寄生二极管或与漏极区域和阱区域之间并联产生的漏极侧的寄生二极管并联连接的高电阻形成在MOS 功率晶体管。因此，它允许阻挡由寄生二极管产生的反向电流并为阱区提供必要的电位。此外，SiC用于MOS功率晶体管而不是Si。

4. 发明授权

US5780953A Alternator 失效
标题翻译：发电机
公开(公告)号：US5780953A
公开(公告)日：1998-07-14
申请号：US658532
申请日：1996-06-05
申请人： Atsushi Umeda , Norihito Tokura , Hirohide Sato , Makoto Taniguchi , Shin Kusase
发明人： Atsushi Umeda , Norihito Tokura , Hirohide Sato , Makoto Taniguchi , Shin Kusase
IPC分类号： H02J7/14 , H02K1/22 , H02K11/04 , H02K21/00 , H02K21/04 , H02P9/48
CPC分类号： H02P9/48 , H02J7/1492 , H02K11/046 , H02K21/044 , Y02T10/92
摘要： In an on-vehicle alternator, both the magnetic flux variation frequency and maximum flux density are decreased sufficiently to thereby decrease the internal iron loss and thereby realize an increase in the current generation efficiency. The on-vehicle alternator comprises a rotor wherein magnetic pole cores that are polarized by a rotor coil to alternately different polarities are circumferentially disposed on the outer periphery thereof at prescribed equi-angular intervals. A permanent magnet which is embedded within a resin-made retainer body is provided between the magnetic pole cores and has side faces, as viewed circumferentially, which are polarized respectively to the same polarities as those of adjacent respective magnetic pole cores to thereby vary the magnetic flux quantity directed toward stator coils so as to exhibit a circumferential gentle curve. A rectifier is constructed using SiC-MOS transistors so that it is conductive and operative to thereby charge a battery with the current developed in the stator coils only when the alternating current voltages generated in the stator coils have become higher than the battery voltage.
摘要翻译：在车载交流发电机中，磁通量变化频率和最大磁通密度都充分降低，从而降低内部铁损，从而实现电流产生效率的提高。车载交流发电机包括转子，其中由转子线圈极化为交替不同极性的磁极铁芯以规定的等角间隔周向地设置在其外周。嵌入在树脂制保持器本体内的永磁体设置在磁极芯之间，并且具有圆周方向的侧面，其分别极化到与相邻的各个磁极芯的极性相同的极性，从而改变磁性磁通量定向于定子线圈，以便呈现圆周平缓曲线。使用SiC-MOS晶体管构造整流器，使得它是导电的并且可操作，从而仅当在定子线圈中产生的交流电压变得高于电池电压时，才能利用定子线圈中产生的电流对电池充电。

5. 发明授权

US07586151B2 Insulated gate semiconductor device 有权
标题翻译：绝缘栅半导体器件
公开(公告)号：US07586151B2
公开(公告)日：2009-09-08
申请号：US11578949
申请日：2005-05-11
申请人： Hidefumi Takaya , Yasushi Okura , Akira Kuroyanagi , Norihito Tokura
发明人： Hidefumi Takaya , Yasushi Okura , Akira Kuroyanagi , Norihito Tokura
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/0653 , H01L29/42368 , H01L29/4238 , H01L29/7811
摘要： The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage. An insulated gate semiconductor device 100 includes a cell area through which current flows and an terminal area which surrounds the cell area. The semiconductor device 100 also has a plurality of gate trenches 21 in the cell area and a plurality of terminal trenches 62 in the terminal area. The gate trenches 21 are formed in a striped shape, and the terminal trenches 62 are formed concentrically. In the semiconductor device 100, the gate trenches 21 and the terminal trenches 62 are positioned in a manner that spacings between the ends of the gate trenches 21 and the side of the terminal trench 62 are uniform. That is, the length of the gate trenches 21 is adjusted according to the curvature of the corners of the terminal trench 62.
摘要翻译：本发明提供了一种绝缘栅半导体器件，其在沟槽底部附近具有浮动区域，并且能够可靠地实现高耐压。绝缘栅半导体器件100包括电流流过的单元区域和围绕单元区域的端子区域。半导体器件100还在单元区域中具有多个栅极沟槽21以及端子区域中的多个端子沟槽62。栅极沟槽21形成为条状，并且端子沟槽62同心地形成。在半导体器件100中，栅极沟槽21和端子沟槽62以栅极沟槽21的端部和端子沟槽62的侧面之间的间隔均匀的方式定位。也就是说，栅极沟槽21的长度根据端子沟槽62的拐角的曲率来调节。

6. 发明申请

US20070200138A1 Semiconductor device having IGBT and diode 有权
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US20070200138A1
公开(公告)日：2007-08-30
申请号：US11709272
申请日：2007-02-22
申请人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
发明人： Yoshihiko Ozeki , Norihito Tokura , Yukio Tsuzuki
IPC分类号： H01L29/74
CPC分类号： H01L27/0611 , H01L29/7395 , H01L29/8611
摘要： A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.
摘要翻译：半导体器件包括：半导体衬底; IGBT区域，包括在所述基板的第一表面上的第一区域，并且在所述基板的第二表面上提供沟道形成区域和第二区域，并提供集电体; 二极管区域，包括在第一表面上的第三区域，并在第二表面上提供阳极或阴极和第四区域，并提供阳极或阴极; 外围区域，包括在第一表面上的第五区域和第二表面上的第六区域。第一，第三和第五区域通常和电耦合，并且第二，第四和第六区域彼此通常电耦合。

7. 发明授权

US6133587A Silicon carbide semiconductor device and process for manufacturing same 失效
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US6133587A
公开(公告)日：2000-10-17
申请号：US23280
申请日：1998-02-13
申请人： Yuichi Takeuchi , Takeshi Miyajima , Norihito Tokura , Hiroo Fuma , Toshio Murata , Takamasa Suzuki , Shoichi Onda
发明人： Yuichi Takeuchi , Takeshi Miyajima , Norihito Tokura , Hiroo Fuma , Toshio Murata , Takamasa Suzuki , Shoichi Onda
IPC分类号： H01L21/04 , H01L29/06 , H01L29/24 , H01L29/78 , H01L31/0312
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/66068 , H01L29/7838 , H01L29/0696
摘要： A n.sup.- -type source region 5 is formed on a predetermined region of the surface layer section of the p-type silicon carbide semiconductor layer 3 of a semiconductor substrate 4. A low-resistance p-type silicon carbide region 6 is formed on a predetermined region of the surface layer section in the p-type silicon carbide semiconductor layer 3. A trench 7 is formed in a predetermined region in the n.sup.+ -type source region 5, which trench 7 passes through the n.sup.+ -type source region 5 and the p-type silicon carbide semiconductor layer 3, reaching the n.sup.- -type silicon carbide semiconductor layer 2. The trench 7 has side walls 7a perpendicular to the surface of the semiconductor substrate 4 and a bottom side 7b parallel to the surface of the semiconductor substrate 4. The hexagonal region surrounded by the side walls 7a of the trench 7 is an island semiconductor region 12. A high-reliability gate insulating film 8 is obtained by forming a gate insulating layer on the side walls 7a which surround the island semiconductor region 12.
摘要翻译： n型源极区5形成在半导体衬底4的p型碳化硅半导体层3的表层部分的预定区域上。低电阻p型碳化硅区6形成在在p型碳化硅半导体层3中的表层部分的预定区域。沟槽7形成在n +型源极区域5中的预定区域中，沟槽7通过n +型源极区域5，并且 p型碳化硅半导体层3，到达n型碳化硅半导体层2.沟槽7具有垂直于半导体衬底4的表面的侧壁7a和平行于半导体衬底的表面的底侧7b 由沟槽7的侧壁7a包围的六边形区域是岛状半导体区域12.通过在侧壁7a上形成栅极绝缘层，形成高可靠性栅极绝缘膜8，岛半导体区域12。

8. 发明授权

US6133120A Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same 失效
标题翻译：硼掺杂的p型单晶碳化硅半导体及其制备方法
公开(公告)号：US6133120A
公开(公告)日：2000-10-17
申请号：US704820
申请日：1996-08-28
申请人： Takeshi Miyajima , Norihito Tokura , Atsuo Fukumoto , Hidemitsu Hayashi
发明人： Takeshi Miyajima , Norihito Tokura , Atsuo Fukumoto , Hidemitsu Hayashi
IPC分类号： H01L21/205 , C30B25/00 , C30B25/02 , H01L21/04 , H01L21/20 , H01L21/265 , H01L21/336 , H01L29/12 , H01L29/24 , H01L29/78 , C01B31/36
CPC分类号： H01L29/7813 , C30B25/00 , C30B25/02 , C30B29/36 , H01L21/0455 , H01L29/66068 , H01L29/1608 , Y10S438/931
摘要： A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.
摘要翻译：通过在单晶碳化硅中掺杂硼作为受主杂质来提供具有高载流子浓度和活化速率的p型碳化硅半导体。硼占据单晶碳化硅的晶格中的硅位置。

9. 发明授权

US5780324A Method of manufacturing a vertical semiconductor device 失效
标题翻译：制造垂直半导体器件的方法
公开(公告)号：US5780324A
公开(公告)日：1998-07-14
申请号：US605637
申请日：1996-02-22
申请人： Norihito Tokura , Shigeki Takahashi , Tsuyoshi Yamamoto , Mitsuhiro Kataoka , Kunihiko Hara
发明人： Norihito Tokura , Shigeki Takahashi , Tsuyoshi Yamamoto , Mitsuhiro Kataoka , Kunihiko Hara
IPC分类号： H01L21/336 , H01L29/04 , H01L29/06 , H01L29/423 , H01L29/78 , H01L21/332
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0696 , H01L29/4236
摘要： A manufacturing method of a vertical DMOSFET having a concave channel structure, which does not permit the introduction of defects or contaminant into the channel part and which can make the shape of the groove uniform, is disclosed. On a surface of a (100)-oriented n.sup.- -on-n.sup.+ epitaxial wafer is formed an initial groove by chemical dry etching. The grooved surface is then oxidized by LOCOS technique to form a LOCOS oxide film, whereby the concave structure is formed on the epitaxial wafer. The concave width is set to be at least twice the concave depth, and the sidewall angle is set to be approximately 50.degree. to make the sidewall plane (111) of high channel mobility plane. Following this process, p-type and n-type impurities are diffused from the main surface using the LOCOS oxide film as a double diffusion mask to form a body region and a source region.
摘要翻译：公开了一种具有凹槽结构的垂直DMOSFET的制造方法，其不允许将缺陷或污染物引入通道部分并且可以使凹槽的形状均匀。在（100）取向的n-on + n外延晶片的表面上，通过化学干蚀刻形成初始槽。然后通过LOCOS技术将开槽的表面氧化以形成LOCOS氧化物膜，由此在外延晶片上形成凹形结构。凹形宽度被设定为凹入深度的至少两倍，并且将侧壁角度设定为大约50°以使高通道迁移面的侧壁平面（111）。在该过程之后，使用LOCOS氧化物膜作为双扩散掩模，从主表面扩散p型和n型杂质，以形成体区和源区。

10. 发明授权

US5519245A Insulated gate bipolar transistor with reverse conducting current 失效
标题翻译：具有反向导通电流的绝缘栅双极晶体管
公开(公告)号：US5519245A
公开(公告)日：1996-05-21
申请号：US56946
申请日：1993-05-05
申请人： Norihito Tokura , Naoto Okabe , Naohito Kato
发明人： Norihito Tokura , Naoto Okabe , Naohito Kato
IPC分类号： H01L29/08 , H01L29/739 , H01L29/80 , H01L23/58 , H01L29/76 , H01L29/861
CPC分类号： H01L29/0834 , H01L29/7395 , H01L2924/0002
摘要： An insulated gate bipolar transistor has a reverse conducting function built therein. A semiconductor layer of a first conduction type is formed on the side of a drain, a semiconductor layer of a second conduction type for causing conductivity modulation upon carrier injection is formed on the semiconductor layer of the first conduction type, a semiconductor layer of the second conduction type for taking out a reverse conducting current opposite in direction to a drain current is formed in the semiconductor layer of the second conduction type which is electrically connected to a drain electrode, and a semiconductor layer of the second conduction type is formed at or in the vicinity of a pn junction, through which carriers are given and received to cause conductivity modulation, with a high impurity concentration resulting in a path for the reverse conducting current into a pattern not impeding the passage of the carriers. Therefore, the built-in reverse conducting function has a low operating resistance, a large reverse current can be passed, there is no increase in on-resistance, and the turn-off time can be shortened.
摘要翻译：绝缘栅双极晶体管内置有反向导通功能。第一导电类型的半导体层形成在漏极侧，在第一导电类型的半导体层上形成用于在载流子注入时引起导电性调制的第二导电类型的半导体层，第二导电类型的半导体层在与漏电极电连接的第二导电类型的半导体层中形成用于取出与漏电流方向相反的反向导通电流的导通型，并且在第二导电类型的半导体层中形成第二导电类型的半导体层 pn结的附近，赋予和接收载流子以引起电导率调制的pn结附近，杂质浓度高，导致反向导通电流进入不妨碍载流子通过的图案的路径。因此，内置的反向导通功能具有低的工作电阻，可以通过大的反向电流，导通电阻不增加，并且可以缩短关断时间。

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