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    • 1. 发明授权
    • Semiconductor device having IGBT and diode
    • 具有IGBT和二极管的半导体器件
    • US08102025B2
    • 2012-01-24
    • US11709272
    • 2007-02-22
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • H01L29/66
    • H01L27/0611H01L29/7395H01L29/8611
    • A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.
    • 半导体器件包括:半导体衬底; IGBT区域,包括在所述基板的第一表面上的第一区域,并且在所述基板的第二表面上提供沟道形成区域和第二区域,并提供集电体; 二极管区域,包括在第一表面上的第三区域,并在第二表面上提供阳极或阴极和第四区域,并提供阳极或阴极; 外围区域,包括在第一表面上的第五区域和第二表面上的第六区域。 第一,第三和第五区域通常和电耦合,并且第二,第四和第六区域彼此通常电耦合。
    • 3. 发明申请
    • Semiconductor device having IGBT and diode
    • 具有IGBT和二极管的半导体器件
    • US20070200138A1
    • 2007-08-30
    • US11709272
    • 2007-02-22
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • H01L29/74
    • H01L27/0611H01L29/7395H01L29/8611
    • A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.
    • 半导体器件包括:半导体衬底; IGBT区域,包括在所述基板的第一表面上的第一区域,并且在所述基板的第二表面上提供沟道形成区域和第二区域,并提供集电体; 二极管区域,包括在第一表面上的第三区域,并在第二表面上提供阳极或阴极和第四区域,并提供阳极或阴极; 外围区域,包括在第一表面上的第五区域和第二表面上的第六区域。 第一,第三和第五区域通常和电耦合,并且第二,第四和第六区域彼此通常电耦合。
    • 5. 发明授权
    • Semiconductor device having IGBT and diode
    • 具有IGBT和二极管的半导体器件
    • US07456484B2
    • 2008-11-25
    • US11648894
    • 2007-01-03
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • H01L21/00
    • H01L29/7395H01L27/0664H01L29/0834H01L29/66333H01L29/861
    • A semiconductor device includes: a semiconductor substrate having first and second semiconductor layers; an IGBT having a collector region, a base region in the first semiconductor layer, an emitter region in the base region, and a channel region in the base region between the emitter region and the first semiconductor layer; a diode having an anode region in the first semiconductor layer and a cathode electrode on the first semiconductor layer; and a resistive region. The collector region and the second semiconductor layer are disposed on the first semiconductor layer. The resistive region for increasing a resistance of the second semiconductor layer is disposed in a current path between the channel region and the cathode electrode through the first semiconductor layer and the second semiconductor layer with bypassing the collector region.
    • 半导体器件包括:具有第一和第二半导体层的半导体衬底; IGBT,其具有集电极区域,第一半导体层中的基极区域,基极区域中的发射极区域和发射极区域与第一半导体层之间的基极区域中的沟道区域; 在所述第一半导体层中具有阳极区域的二极管和所述第一半导体层上的阴极电极; 和电阻区域。 集电极区域和第二半导体层设置在第一半导体层上。 用于增加第二半导体层的电阻的电阻区域通过绕过集电极区域而被布置在通过第一半导体层和第二半导体层的沟道区域和阴极电极之间的电流通路中。
    • 6. 发明申请
    • Semiconductor device having IGBT and diode
    • 具有IGBT和二极管的半导体器件
    • US20070158680A1
    • 2007-07-12
    • US11648894
    • 2007-01-03
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • Yoshihiko OzekiNorihito TokuraYukio Tsuzuki
    • H01L29/74
    • H01L29/7395H01L27/0664H01L29/0834H01L29/66333H01L29/861
    • A semiconductor device includes: a semiconductor substrate having first and second semiconductor layers; an IGBT having a collector region, a base region in the first semiconductor layer, an emitter region in the base region, and a channel region in the base region between the emitter region and the first semiconductor layer; a diode having an anode region in the first semiconductor layer and a cathode electrode on the first semiconductor layer; and a resistive region. The collector region and the second semiconductor layer are disposed on the first semiconductor layer. The resistive region for increasing a resistance of the second semiconductor layer is disposed in a current path between the channel region and the cathode electrode through the first semiconductor layer and the second semiconductor layer with bypassing the collector region.
    • 半导体器件包括:具有第一和第二半导体层的半导体衬底; IGBT,其具有集电极区域,第一半导体层中的基极区域,基极区域中的发射极区域和发射极区域与第一半导体层之间的基极区域中的沟道区域; 在所述第一半导体层中具有阳极区域和在所述第一半导体层上的阴极电极的二极管; 和电阻区域。 集电极区域和第二半导体层设置在第一半导体层上。 用于增加第二半导体层的电阻的电阻区域通过绕过集电极区域而被布置在通过第一半导体层和第二半导体层的沟道区域和阴极电极之间的电流通路中。
    • 7. 发明申请
    • Semiconductor device having IGBT and diode
    • 具有IGBT和二极管的半导体器件
    • US20070170549A1
    • 2007-07-26
    • US11649367
    • 2007-01-04
    • Yukio TsuzukiNorihito Tokura
    • Yukio TsuzukiNorihito Tokura
    • H01L27/082
    • H01L27/0664H01L29/0834H01L29/7397H01L29/861
    • A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.
    • 一种半导体器件包括:具有第一面和第二面的衬底; IGBT; 和二极管。 衬底包括第一层,第一层上的第二层,第二层上的第一侧N区,第一层的第二侧上的第二侧N和P区,用于栅极的第一沟槽中的第一电极 电极,第一侧N区域上的第二电极和用于发射电极和阳极电极的第二沟槽中,以及在第二侧的第三电极N和用于集电极和阴极的P区域。 第一沟槽穿过第一侧N区和第二层,并到达第一层。 第二沟槽穿过第一侧N区域并到达第二层。
    • 8. 发明授权
    • Semiconductor device having IGBT and diode
    • 具有IGBT和二极管的半导体器件
    • US07498634B2
    • 2009-03-03
    • US11649367
    • 2007-01-04
    • Yukio TsuzukiNorihito Tokura
    • Yukio TsuzukiNorihito Tokura
    • H01L29/76
    • H01L27/0664H01L29/0834H01L29/7397H01L29/861
    • A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.
    • 一种半导体器件包括:具有第一面和第二面的衬底; IGBT; 和二极管。 衬底包括第一层,第一层上的第二层,第二层上的第一侧N区,第一层的第二侧上的第二侧N和P区,用于栅极的第一沟槽中的第一电极 电极,第一侧N区域上的第二电极和用于发射电极和阳极电极的第二沟槽中,以及在第二侧的第三电极N和用于集电极和阴极的P区域。 第一沟槽穿过第一侧N区和第二层,并到达第一层。 第二沟槽穿过第一侧N区域并到达第二层。
    • 10. 发明授权
    • Semiconductor device having IGBT cell and diode cell and method for designing the same
    • 具有IGBT单元和二极管单元的半导体器件及其设计方法
    • US07692214B2
    • 2010-04-06
    • US11885334
    • 2007-03-20
    • Norihito TokuraYukio TsuzukiKenji Kouno
    • Norihito TokuraYukio TsuzukiKenji Kouno
    • H01L29/00
    • H01L29/7395H01L27/0664H01L29/861
    • A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first layer and the second and third layers. The first layer provides a drift layer of the IGBT cell and the diode cell. The second layer provides a collector layer of the IGBT cell. The third layer provides one electrode connection layer of the diode cell. A resistivity ρ1 and a thickness L1 of the first layer, a resistivity ρ2 and a thickness L2 of the fourth layer, and a half of a minimum width W2 of the second layer on a substrate plane have a relationship of (ρ1/ρ2)×(L1·L2/W22)
    • 半导体器件包括:半导体衬底; IGBT单元; 和二极管单元。 衬底包括在第一表面上的第一层,相邻地布置在衬底的第二表面上的第二层和第三层以及在第一层和第二层和第三层之间的第四层。 第一层提供了IGBT单元和二极管单元的漂移层。 第二层提供IGBT单元的集电极层。 第三层提供二极管单元的一个电极连接层。 第一层的电阻率和第一层的厚度L1,第四层的电阻率rgr2和厚度L2以及第二层在基板平面上的最小宽度W2的一半具有(&rgr ; 1 /&rgr; 2)×(L1·L2 / W22)<1.6。