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1. 发明申请

US20120056155A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056155A1
公开(公告)日：2012-03-08
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/06 , H01L33/38 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

2. 发明申请

US20110220936A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING INSTRUMENT EMPLOYING THE SAME AND PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件，使用其的照明器具和用于生产半导体发光器件的工艺
公开(公告)号：US20110220936A1
公开(公告)日：2011-09-15
申请号：US12876318
申请日：2010-09-07
申请人： Akira Fujimoto , Ryota Kitagawa , Eishi Tsutsumi , Koji Asakawa
发明人： Akira Fujimoto , Ryota Kitagawa , Eishi Tsutsumi , Koji Asakawa
IPC分类号： H01L33/40 , H01L21/283
CPC分类号： H01L33/58 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.
摘要翻译：根据实施例的半导体发光器件包括衬底，化合物半导体层，设置有特定开口的金属电极层，光提取层和对电极。光提取层的厚度为20〜120nm，至少部分覆盖金属电极层的金属部分。否则光提取层具有坚固的结构并且至少部分地覆盖金属电极层的金属部分。凹凸结构具有突出部，使得它们的顶点以100至600nm的间隔定位，并且来自金属电极层的表面的顶点的高度为200至700nm。

3. 发明授权

US07928353B2 Displaying device and lighting device employing organic electroluminescence element 有权
标题翻译：使用有机电致发光元件的显示装置和照明装置
公开(公告)号：US07928353B2
公开(公告)日：2011-04-19
申请号：US12392691
申请日：2009-02-25
申请人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi , Eishi Tsutsumi , Ryota Kitagawa
发明人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi , Eishi Tsutsumi , Ryota Kitagawa
IPC分类号： H01J1/46
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.
摘要翻译：本发明提供一种高效率的有机EL显示器和照明装置。有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

4. 发明授权

US09444012B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09444012B2
公开(公告)日：2016-09-13
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer includes a metal portion, plural first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plural first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和第一和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部各自具有不小于10纳米且不大于1微米的圆当量直径。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

5. 发明申请

US20130057138A1 LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 审中-公开
标题翻译：具有高分子结构的发光金属电极及其制备方法
公开(公告)号：US20130057138A1
公开(公告)日：2013-03-07
申请号：US13669793
申请日：2012-11-06
申请人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
发明人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
IPC分类号： H01J1/54
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

6. 发明授权

US08334547B2 Light-transmitting metal electrode having hyperfine structure and process for preparation thereof 有权
标题翻译：具有超精细结构的透光金属电极及其制备方法
公开(公告)号：US08334547B2
公开(公告)日：2012-12-18
申请号：US12187653
申请日：2008-08-07
申请人： Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa
发明人： Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa
IPC分类号： H01L33/00
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

7. 发明申请

US20120061712A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120061712A1
公开(公告)日：2012-03-15
申请号：US13038154
申请日：2011-03-01
申请人： Kumi Masunaga , Ryota Kitagawa , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Kumi Masunaga , Ryota Kitagawa , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/40
CPC分类号： H01L33/38 , H01L33/40
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。第一电极层包括具有多个开口部的金属部。开口部分穿透金属部分并且具有开口部分形状的当量圆直径。发光层位于第一半导体层和第一电极层之间。第二导电类型的第二半导体层位于发光层和第一电极层之间。第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。第二电极层连接到第一半导体层。

8. 发明申请

US20120056232A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056232A1
公开(公告)日：2012-03-08
申请号：US13037937
申请日：2011-03-01
申请人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Akira Fujimoto , Koji Asakawa , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/38 , H01L33/42 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括结构体，第一电极层，中间层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。第二电极层电连接到第一半导体层。

9. 发明申请

US20090079322A1 LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 有权
标题翻译：具有高分子结构的发光金属电极及其制备方法
公开(公告)号：US20090079322A1
公开(公告)日：2009-03-26
申请号：US12187653
申请日：2008-08-07
申请人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
发明人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
IPC分类号： H01J1/54 , H01B13/00 , B05D5/12
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不超过可见波长的1/3的直线长度线性地继续直线而不断裂，用于380nm至780nm。这些开口的平均直径在入射光的波长的10nm以上且1/3以下的范围内，开口的中心之间的间距不小于平均直径，不大于1/2 的入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

10. 发明授权

US08450768B2 Semiconductor light-emitting element and process for production thereof 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08450768B2
公开(公告)日：2013-05-28
申请号：US13335984
申请日：2011-12-23
申请人： Ryota Kitagawa , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
发明人： Ryota Kitagawa , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译：本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。放置在光提取侧的电极层包括金属部分和多个开口。金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于从活性层发射的光的1/3。平均开口直径为发射光波长的10nm至1/3。电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

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