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1. 发明授权

US09378962B2 Nonvolatile semiconductor storage device having a charge storage layer that includes metal grains 有权
标题翻译：具有包含金属颗粒的电荷存储层的非易失性半导体存储装置
公开(公告)号：US09378962B2
公开(公告)日：2016-06-28
申请号：US13601539
申请日：2012-08-31
申请人： Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
发明人： Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
IPC分类号： G11C16/04 , H01L21/28 , B82Y10/00 , H01L29/423 , H01L29/788 , H01L27/115
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0416 , G11C16/0483 , H01L27/11556 , H01L29/42332 , H01L29/7881
摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.
摘要翻译：非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极电极形成在第二绝缘膜上。在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

2. 发明授权

US08633526B2 Nonvolatile semiconductor memory device and method for manufacturing same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08633526B2
公开(公告)日：2014-01-21
申请号：US13234657
申请日：2011-09-16
申请人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
发明人： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
IPC分类号： H01L27/108
CPC分类号： H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。第一半导体层与第一电极膜的侧面相对。第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

3. 发明申请

US20100236620A1 THIN FILM SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20100236620A1
公开(公告)日：2010-09-23
申请号：US12706338
申请日：2010-02-16
申请人： Tsutomu NAKANISHI , Eishi Tsutsumi , Akira Fujimoto , Kumi Masunaga , Ryota Kitagawa , Koji Asakawa , Hideyuki Nishizawa
发明人： Tsutomu NAKANISHI , Eishi Tsutsumi , Akira Fujimoto , Kumi Masunaga , Ryota Kitagawa , Koji Asakawa , Hideyuki Nishizawa
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/022433 , H01L31/075 , Y02E10/548
摘要： According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 μm or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm2 to 0.8 μm2. The opening ratio is in the range of 10% to 66%.
摘要翻译：根据本发明的一个方面，提供了一种薄膜太阳能电池，其包括基板，形成在所述基板上的光电转换层，所述光电转换层的厚度为1μm以下，所述光电转换层包括 p型半导体层，n型半导体层，并且是位于所述p型半导体层和所述n型半导体层之间的i型半导体层，形成在光入射表面上的光入射侧电极层的所述光电转换层和形成在与所述光入射表面相对的表面上的对电极层。所述光入射侧电极层具有贯穿所述层的多个开口，其厚度在10nm至200nm的范围内。每个所述开口占据80nm 2至0.8μm2的面积。开口率在10％至66％的范围内。

4. 发明授权

US07732806B2 Refractive index variable element 有权
$Refractive index variable element$
标题翻译：折射率可变元件
公开(公告)号：US07732806B2
公开(公告)日：2010-06-08
申请号：US11441092
申请日：2006-05-26
申请人： Reiko Yoshimura , Hideyuki Nishizawa , Kenji Todori , Ko Yamada , Fumihiko Aiga , Tsukasa Tada
发明人： Reiko Yoshimura , Hideyuki Nishizawa , Kenji Todori , Ko Yamada , Fumihiko Aiga , Tsukasa Tada
IPC分类号： H01L31/00
CPC分类号： G02F1/0018 , B82Y10/00 , B82Y20/00 , G02F2001/01791 , G02F2202/13 , Y10S977/774 , Y10S977/778 , Y10S977/81 , Y10S977/932
摘要： A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.
摘要翻译：折射率可变元件具有包括固体基质和分散在固体基质中的一种或多种类型的量子点并且具有离散的占据和未占据的电子能级的结构。量子点执行在用光照射时产生一对正电荷和负电荷的功能，捕获正电荷的功能以及捕获负电荷的功能。执行捕获负电荷的功能的量子点从由带负电的正电荷和带正电的原子的组合组成的组中选择，其中带正电的原子的最外面的电子壳完全充满电子，使得附加当接收电子时，电子占据上部不同的壳轨道，金属螯合络合物，茂金属及其衍生物。

5. 发明申请

US20050026079A1 Recording medium 失效
标题翻译：录音媒体
公开(公告)号：US20050026079A1
公开(公告)日：2005-02-03
申请号：US10868803
申请日：2004-06-17
申请人： Naoko Kihara , Katsutaro Ichihara , Akiko Hirao , Kazuki Matsumoto , Hideyuki Nishizawa , Urara Ichihara
发明人： Naoko Kihara , Katsutaro Ichihara , Akiko Hirao , Kazuki Matsumoto , Hideyuki Nishizawa , Urara Ichihara
IPC分类号： G03F7/038 , G03C1/73 , G03F7/00 , G03F7/004 , G03F7/039 , G03H1/02 , G11B7/24 , G11B7/244
CPC分类号： G03F7/001 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115 , Y10S430/128
摘要： Disclosed is a recording medium comprising a recording layer including a photo-acid generating agent that generates an acid upon irradiation with an actinic radiation and a polymer having a polymerizable substituent group bonded to a main chain of the polymer via a functional group that cleaves in the presence of the acid.
摘要翻译：公开了一种记录介质，其包括记录层，该记录层包括在通过光化辐射照射时产生酸的光酸产生剂和具有通过在聚合物主链中切割的官能团而与聚合物主链键合的聚合性取代基的聚合物存在酸。

6. 发明授权

US5971276A Method of reading pattern and optical signal reader 失效
标题翻译：读取模式和光信号读取器的方法
公开(公告)号：US5971276A
公开(公告)日：1999-10-26
申请号：US798302
申请日：1997-02-07
申请人： Kenji Sano , Taeko I. Urano , Hideyuki Nishizawa , Mitsunaga Saito , Kenji Todori
发明人： Kenji Sano , Taeko I. Urano , Hideyuki Nishizawa , Mitsunaga Saito , Kenji Todori
IPC分类号： B42D15/10 , G06K1/12 , G06K7/00 , G06K7/10 , G06K7/12 , G06K17/00
CPC分类号： G06K7/12
摘要： A method of reading a pattern including steps of heating or irradiating with infrared light a substrate on which a transparent pattern is formed, the pattern containing a material capable of absorbing infrared light of specific wavelength such as polyacrylonitrile, and detecting infrared light which is radiated or reflected from the pattern.
摘要翻译：一种读取图案的方法，包括用红外光加热或照射其上形成透明图案的基板的步骤，该图案包含能够吸收特定波长的红外光的材料，例如聚丙烯腈，并且检测辐射的红外光或从模式反映出来。

7. 发明授权

US5849651A Reversible thermal recording medium 失效
标题翻译：可逆热记录介质
公开(公告)号：US5849651A
公开(公告)日：1998-12-15
申请号：US656486
申请日：1996-05-31
申请人： Satoshi Takayama , Sawako Fujioka , Tetsuo Okuyama , Hideyuki Nishizawa , Hirohisa Miyamoto , Masami Sugiuchi
发明人： Satoshi Takayama , Sawako Fujioka , Tetsuo Okuyama , Hideyuki Nishizawa , Hirohisa Miyamoto , Masami Sugiuchi
IPC分类号： B41M5/337 , B41M5/34
CPC分类号： B41M5/3375
摘要： A reversible thermal recording medium comprises a composition containing a color former, a developer, a reversible material capable of reversibly changing the state of the composition by supplying heat energies with two different values, and, as required, a phase separation controller which permits changing the phase separation speed of the developer at temperatures in the vicinity of the melting point of the phase separation controller, at least 80% by weight of the reversible material being a sterol compound in which the carbon-to-carbon bond between 2- and 3-positions of the stroid skeleton is a single bond, the carbon-to-carbon bond between 3- and 4-positions of the steroid skeleton is a single bond, a hydroxyl group is attached to the carbon atom in at least the 3-position of the steroid skeleton, and a specified chemical structure is bonded at 16- and 17-positions of the stroid skeleton, and the phase separation controller being provided by a low molecular organic material, the maximum carbon chain length there of being at least 10.
摘要翻译：可逆热记录介质包括含有成色剂，显影剂，能够通过提供具有两种不同值的热能可逆地改变组合物的状态的可逆材料的组合物，并且根据需要，允许改变在相分离控制器的熔点附近的温度下显影剂的相分离速度，至少80重量％的可逆材料是固醇化合物，其中2-和3-之间的碳 - 碳键，骨架骨架的位置是单键，类固醇骨架的3-和4-位之间的碳 - 碳键是单键，羟基在至少3-位的碳原子上连接类固醇骨架和指定的化学结构键合在骨架的16位和17位，相分离控制器由低分子有机材料提供，m 其最大碳链长度至少为10。

8. 发明授权

US4345609A Rinsing and drying apparatus 失效
标题翻译：冲洗和烘干设备
公开(公告)号：US4345609A
公开(公告)日：1982-08-24
申请号：US179831
申请日：1980-08-20
申请人： Hideyuki Nishizawa
发明人： Hideyuki Nishizawa
IPC分类号： B08B11/00 , B08B13/00 , F26B3/04 , F26B9/06 , F26B21/00 , B08B9/00
CPC分类号： F26B9/06 , F26B21/006 , F26B3/04
摘要： This invention relates to an apparatus for drying treatment of articles requiring the drying, and for rinsing and drying small glass tubes such as pipettes used in the chemical analysis or the like effectively.
摘要翻译：本发明涉及一种用于干燥处理需要干燥的物品的设备，以及用于在化学分析等中使用的小型玻璃管如移液管等的漂洗和干燥。

9. 发明授权

US08896052B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08896052B2
公开(公告)日：2014-11-25
申请号：US13727160
申请日：2012-12-26
申请人： Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
发明人： Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
IPC分类号： H01L29/792 , H01L21/28 , H01L29/51 , H01L29/66 , H01L27/115
CPC分类号： H01L27/11582 , H01L21/28282 , H01L27/11568 , H01L29/513 , H01L29/518 , H01L29/66833 , H01L29/792
摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
摘要翻译：实施例的非易失性半导体存储器件包括：半导体层; 隧道绝缘膜，其形成在所述半导体层上并且包括第一有机分子膜，所述第一有机分子膜包含以烷基分子链为主链的第一有机分子; 形成在隧道绝缘膜上的电荷存储层，电荷存储层由无机材料制成; 形成在电荷存储层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

10. 发明授权

US08890234B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08890234B2
公开(公告)日：2014-11-18
申请号：US13721860
申请日：2012-12-20
申请人： Masaya Terai , Shigeki Hattori , Hideyuki Nishizawa , Koji Asakawa , Tsukasa Tada
发明人： Masaya Terai , Shigeki Hattori , Hideyuki Nishizawa , Koji Asakawa , Tsukasa Tada
IPC分类号： H01L29/792 , H01L21/28 , H01L51/05 , H01L27/115 , H01L51/00
CPC分类号： H01L27/11582 , G11C13/0016 , G11C13/004 , G11C13/0069 , G11C13/0097 , G11C2213/71 , G11C2213/75 , H01L21/28282 , H01L29/4234 , H01L29/51 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/792 , H01L29/7926 , H01L51/0078 , H01L51/0591
摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.
摘要翻译：实施例的非易失性半导体存储器件包括：半导体层; 形成在半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

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