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1. 发明授权

US5635301A Multilayered glass substrate 失效
标题翻译：多层玻璃基板
公开(公告)号：US5635301A
公开(公告)日：1997-06-03
申请号：US252541
申请日：1994-06-01
申请人： Kazuo Kondo , Asao Morikawa
发明人： Kazuo Kondo , Asao Morikawa
IPC分类号： C03C10/00 , C03C11/00 , C03C14/00 , C03C17/02 , H01L23/15 , H01L23/498 , H01L23/538 , H01L23/66 , H05K1/03 , B32B17/06
CPC分类号： H01L23/49894 , C03C10/0009 , C03C11/00 , C03C14/004 , C03C17/02 , H01L23/15 , H01L23/49822 , H01L23/5383 , H01L23/66 , H05K1/0306 , C03C2214/04 , H01L2924/0002 , H01L2924/09701 , Y10T428/24917 , Y10T428/24926 , Y10T428/24942 , Y10T428/24967 , Y10T428/24975 , Y10T428/249956 , Y10T428/249981 , Y10T428/249988 , Y10T428/24999
摘要： A multilayered substrate is disclosed comprising a first layer of relatively dense crystalline glass, and a second layer of a porous crystalline glass characterized by a relatively low dielectric constant bonded to the first layer. The crystalline glass in both layers is of substantially the same composition.
摘要翻译：公开了一种多层衬底，其包括相对致密的晶体玻璃的第一层和多孔结晶玻璃的第二层，其特征在于结合到第一层的相对低的介电常数。两层中的结晶玻璃具有基本上相同的组成。

2. 发明授权

US5261950A Composition for metalizing ceramics 失效
标题翻译：金属化陶瓷的组成
公开(公告)号：US5261950A
公开(公告)日：1993-11-16
申请号：US903933
申请日：1992-06-26
申请人： Asao Morikawa , Kazunori Miura , Kazuo Kondo
发明人： Asao Morikawa , Kazunori Miura , Kazuo Kondo
IPC分类号： C04B41/51 , C04B41/88 , H05K1/09 , H01B1/02 , H01B1/08
CPC分类号： C04B41/88 , C04B41/009 , C04B41/5127 , C04B41/515 , H05K1/092 , C04B2111/00844
摘要： A composition for metalizing low temperature-fired ceramics according to the invention includes: a combination of two or three oxides selected from the group consisting of 1 to 8 percent by weight of bismuth(III) oxide (Bi.sub.2 O.sub.3), 0.1 to 5 percent by weight of MoO.sub.3, and 0.1 to 2 percent by weight of Cr.sub.2 O.sub.3 as well as a primary constituent, that is, mixture of copper (Cu) and copper(II) oxide (CuO) or mixture of copper(II) oxide (CuO) and copper(I) oxide (Cu.sub.2 O). The additives of the invention efficiently keep the resultant metalized layer out of cracks and prevent local sintering and burr of the metalized layer.
摘要翻译：根据本发明的用于金属化低温烧制陶瓷的组合物包括：选自1至8重量％的氧化铋（III）（Bi 2 O 3），0.1至5重量％的二氧化硅或三种氧化物的组合的MoO 3和0.1〜2重量％的Cr 2 O 3以及主要成分，即铜（Cu）和氧化铜（II）（CuO）或铜（II）的氧化物（CuO）和铜的混合物的混合物（I）氧化物（Cu 2 O）。本发明的添加剂有效地使得到的金属化层不发生裂纹，防止金属化层的局部烧结和毛刺。

3. 发明授权

US5006167A Metallizing composition 失效
标题翻译：金属组成
公开(公告)号：US5006167A
公开(公告)日：1991-04-09
申请号：US301291
申请日：1989-01-25
申请人： Asao Morikawa , Kazuo Kondo
发明人： Asao Morikawa , Kazuo Kondo
IPC分类号： B23K35/00 , C03C8/14 , C03C8/18 , C04B41/51 , C04B41/88 , C23C24/00 , H01B1/16 , H01L21/48 , H01L23/498 , H05K1/09
CPC分类号： C04B41/009 , B23K35/001 , C03C8/14 , C03C8/18 , C04B41/5116 , C04B41/88 , C23C24/00 , H01B1/16 , H01L21/4867 , H01L23/49883 , C04B2111/00844 , H01L2924/0002 , H05K1/092
摘要： A metallizing composition is described that comprises 100 parts by weight of Au powder, from 2 to 7 parts by weight of CuO powder, from 0.3 to 2 parts by weight of a glass-based inorganic powder free from PbO, and from 3 to 8 parts by weight of a resin.
摘要翻译：描述了一种金属组合物，其包含100重量份的Au粉末，2至7重量份的CuO粉末，0.3至2重量份的不含PbO的玻璃基无机粉末和3至8个的树脂。

4. 发明授权

US4801067A Method of connecting metal conductor to ceramic substrate 失效
标题翻译：将金属导体连接到陶瓷基板的方法
公开(公告)号：US4801067A
公开(公告)日：1989-01-31
申请号：US89762
申请日：1987-08-27
申请人： Kazuo Kondo , Tsuneyuki Sukegawa , Asao Morikawa
发明人： Kazuo Kondo , Tsuneyuki Sukegawa , Asao Morikawa
IPC分类号： B23K35/00 , C04B37/02 , F01M1/08 , H01L21/00 , H01L21/48 , B23K1/04 , H01R9/06 , H05K3/00
CPC分类号： H01L21/67138 , B23K35/001 , C04B37/026 , H01L21/4853 , C04B2237/123 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/343 , C04B2237/403 , C04B2237/406 , C04B2237/407 , C04B2237/708 , C04B2237/72 , C04B2237/76 , F01M2001/086 , Y10T29/49149
摘要： A method of connecting a metal conductor to a ceramic substrate including the steps of providing a terminal portion on the ceramic substrate, the ceramic substrate having a dielectric constant less than or equal to 7.0 units and a coefficient of thermal expansion of 5.times.10.sup.-6 /.degree. C. or less, forming at least one of a buffer layer and a barrier layer overlying the terminal portion of the ceramic substrate, wherein the buffer layer consists essentially of Cu and the barrier layer consists essentially of a material selected from the group consisting of Ni, Pd, and Pt, and brazing a metal conductor to the terminal portion of the ceramic substrate through the at least one of the buffer layer and the barrier layer with an Ag-based brazing filler material.
摘要翻译：一种将金属导体连接到陶瓷基板的方法，包括以下步骤：在陶瓷基板上设置端子部分，陶瓷基板的介电常数小于或等于7.0单位，热膨胀系数为5×10 -6 /℃ 形成覆盖陶瓷衬底的端部的缓冲层和阻挡层中的至少一个，其中缓冲层基本上由Cu组成，阻挡层基本上由选自Ni ，Pd和Pt，并且通过所述缓冲层和所述阻挡层中的所述至少一个，使用Ag系钎焊料将金属导体钎焊到所述陶瓷基板的所述端子部。

5. 发明授权

US5175130A Low-temperature baked substrate 失效
标题翻译：低温烘烤基材
公开(公告)号：US5175130A
公开(公告)日：1992-12-29
申请号：US303374
申请日：1989-01-30
申请人： Kazuo Kondo , Asao Morikawa
发明人： Kazuo Kondo , Asao Morikawa
IPC分类号： C03C10/00 , C03C11/00 , C03C14/00 , C03C17/02 , H01L23/15 , H01L23/498 , H01L23/538 , H01L23/66 , H05K1/03
CPC分类号： H01L23/49894 , C03C10/0009 , C03C11/00 , C03C14/004 , C03C17/02 , H01L23/15 , H01L23/49822 , H01L23/5383 , H01L23/66 , H05K1/0306 , C03C2214/04 , H01L2924/0002 , H01L2924/09701 , Y10T428/24917 , Y10T428/24926 , Y10T428/24942 , Y10T428/24967 , Y10T428/24975 , Y10T428/249956 , Y10T428/249981 , Y10T428/249988 , Y10T428/24999
摘要： A substrate having a low dielectric constant for use with electronic devices consisting essentially of porous crystalline glass. The composition of the crystalline glass is represented by the formula X-Al.sub.2 O.sub.3 -SiO.sub.2, where X is one or more of the metal oxides ZnO, MgO, Li.sub.2 O, ZrO.sub.2, B.sub.2 O.sub.3, P.sub.2 O.sub.5, Y.sub.2 O.sub.3 and BaO. The crystalline glass may also include a filler material such as a ceramic powder or non-glass material. The substrate initially has a particle size of approximately 5 microns or less, which provides a high mechanical strength to the substrate even at high porosities.
摘要翻译：具有低介电常数的衬底，用于与基本上由多孔结晶玻璃组成的电子器件。结晶玻璃的组成由式X-Al 2 O 3 -SiO 2表示，其中X是一种或多种金属氧化物ZnO，MgO，Li 2 O，ZrO 2，B 2 O 3，P 2 O 5，Y 2 O 3和BaO。结晶玻璃还可以包括诸如陶瓷粉末或非玻璃材料的填充材料。基底最初具有大约5微米或更小的粒度，即使在高孔隙率下也能提供高的机械强度。

6. 发明授权

US5122930A High heat-conductive, thick film multi-layered circuit board 失效
标题翻译：高导热，厚膜多层电路板
公开(公告)号：US5122930A
公开(公告)日：1992-06-16
申请号：US456087
申请日：1990-01-04
申请人： Kazuo Kondo , Asao Morikawa
发明人： Kazuo Kondo , Asao Morikawa
IPC分类号： H05K3/46 , H01L23/14 , H01L23/15 , H01L23/373 , H05K1/03
CPC分类号： H01L23/142 , H01L23/15 , H01L23/3731 , H01L2924/0002 , H01L2924/09701 , H05K1/0306 , H05K3/4667
摘要： High heat-conductive, thick film multilayered circuit board for high speed signal transmission in a high frequency region, the circuit board comprising: a substrate having high heat conductivity; an oxidized layer formed on a surface of said substrate; an electrically conductive layer formed of a printed paste containing therein crystallized glass; and an insulating layer formed of a printed insulating paste comprised of crystallized glass as a principal constitutent, wherein at least one of said conductive layer and at least one of said insulating layer are alternately disposed by printing on the oxidized layer of said substrate, and said conductive and insulating layers have been heated to form solid layers. The substrate is AlN, SiC/BeO, SiC, Cu/W and/or ZrB.sub.2 having a heat conductively of 40-140 W/m.multidot.k at room temperature. The layers have high adhesion strength to the substrate and the insulating layer has a low dielectric constant.
摘要翻译：高导热，厚膜多层电路板，用于高频区域的高速信号传输，该电路板包括：具有高导热性的基板; 形成在所述基板的表面上的氧化层; 由含有结晶玻璃的印刷糊形成的导电层; 以及由以结晶化玻璃为主要成分的印刷绝缘膏形成的绝缘层，其中所述导电层和至少一个所述绝缘层中的至少一个通过印刷在所述基板的氧化层上交替设置，并且所述绝缘层导电和绝缘层已被加热以形成固体层。基板是在室温下导热为40-140W / m×k的AlN，SiC / BeO，SiC，Cu / W和/或ZrB 2。这些层对基板具有高粘合强度，并且绝缘层具有低介电常数。

7. 发明授权

US4963187A Metallizing paste for circuit board having low thermal expansion coefficient 失效
标题翻译：具有低热膨胀系数的电路板用金属膏
公开(公告)号：US4963187A
公开(公告)日：1990-10-16
申请号：US164361
申请日：1988-03-04
申请人： Kazuo Kondo , Asao Morikawa
发明人： Kazuo Kondo , Asao Morikawa
IPC分类号： C22C32/00 , H01L23/498 , H05K1/09
CPC分类号： H01L23/49883 , C22C32/0089 , H01L2924/0002 , H01L2924/09701 , H05K1/092
摘要： Metallizing paste is composed, by weight, of 100 parts of Pt, 0.5 to 5 parts of Ag, 0.1 to 1 part of CuO, and 2 to 10 parts of a low thermal expansion fritt, which may also contain up to 100 parts of Au. Another metallizing paste is composed, by weight, of 100 parts of Pd, 0.5 to 4 parts of Ag, 0.1 to 1 part of CuO, and 1 to 10 parts of a low thermal expansion fritt, which may also contain up to 50 parts of Au. A low thermal expansion circuit board with multi-layers is made up to a low thermal expansion substrate such as crystallized glass, A1N, SiC, Si.sub.3 N.sub.4 etc. and metallized layers formed on the surface of the substrate based on the abovementioned metallizing pastes comprising crystallized glass type materials.
摘要翻译：金属化膏料按重量计由100份Pt，0.5份至5份Ag，0.1份至1份CuO和2份至10份低热膨胀型脆饼组成，其中还可含有至多100份Au 。另一种金属化糊料按重量计由100份Pd，0.5至4份Ag，0.1份至1份CuO和1至10份低热膨胀型脆饼组成，其中还可含有至多50份金。具有多层的低热膨胀电路板由诸如结晶玻璃，AlN，SiC，Si 3 N 4等的低热膨胀基板构成，并且基于上述包含结晶玻璃的金属化糊料形成在基板表面上的金属化层型材料。

8. 发明授权

US4941582A Hermetically sealed ceramic package 失效
标题翻译：密封陶瓷包装
公开(公告)号：US4941582A
公开(公告)日：1990-07-17
申请号：US415777
申请日：1989-10-02
申请人： Asao Morikawa , Kazuo Kondo
发明人： Asao Morikawa , Kazuo Kondo
IPC分类号： H01L23/10 , B65D6/32 , B65D81/34 , H01L23/08
CPC分类号： B65D81/3453 , H01L2924/15151 , Y10T428/1317
摘要： The invention relates to a hermetically sealed ceramic package for an electric or electronic device, the package using a low temperature fired ceramic or glass-ceramic as the material of the package base supporting the device. The hermetically sealing joint between the package base and a ceramic cap is provided by metallizing the opposite surfaces of the base and the cap with Cu, plating the Cu metallized layer of each member with a metal not alloyable with Cu or Ag, such as Ni or Pd for example, plating that metal layer with Au and brazing the Au layer of the cap to the Au layer of the base with Au-Sn eutectic alloy. Since the Au layers are respectively shielded from the Cu metallized layers by the non-alloyable metal layers, the brazing operation to form the sealing layer of Au-Sn is accomplished without suffering from deterioration of the Au-Sn seal by intrusion of melted Cu into the Au-Sn seal.
摘要翻译：本发明涉及一种用于电气或电子设备的密封陶瓷封装，该封装使用低温烧制陶瓷或玻璃陶瓷作为支撑该器件的封装基座的材料。通过用Cu对基底和盖的相对表面进行金属化，使每个构件的Cu金属化层与不能与Cu或Ag合金化的金属（例如Ni或Ni）镀覆，从而提供封装基座和陶瓷盖之间的气密密封接头 Pd，例如，用Au镀金属层，并用Au-Sn共晶合金将盖的Au层钎焊到基体的Au层。由于Au层通过不合金金属层分别与Cu金属化层屏蔽，所以形成Au-Sn密封层的钎焊操作完成，而不会由于熔融的Cu侵入而导致Au-Sn密封的劣化 Au-Sn密封。

9. 发明授权

US5405562A Process of making a coated substrate having closed porosity 失效
标题翻译：制造具有闭孔率的涂布基材的方法
公开(公告)号：US5405562A
公开(公告)日：1995-04-11
申请号：US183791
申请日：1994-01-21
申请人： Kazuo Kondo , Asao Morikawa
发明人： Kazuo Kondo , Asao Morikawa
IPC分类号： C03C10/00 , C03C11/00 , C03C14/00 , C03C17/02 , H01L23/15 , H01L23/498 , H01L23/538 , H01L23/66 , H05K1/03 , B29C65/00
CPC分类号： H01L23/49894 , C03C10/0009 , C03C11/00 , C03C14/004 , C03C17/02 , H01L23/15 , H01L23/49822 , H01L23/5383 , H01L23/66 , H05K1/0306 , C03C2214/04 , H01L2924/0002 , H01L2924/09701 , Y10T428/24917 , Y10T428/24926 , Y10T428/24942 , Y10T428/24967 , Y10T428/24975 , Y10T428/249956 , Y10T428/249981 , Y10T428/249988 , Y10T428/24999
摘要： A method of forming a substrate for electronic devices by forming a mixture of a liquid vehicle, crystalline glass powder and carbon powder into a slurry. The slurry is then formed into a desired shape and heated in an oxidizing atmosphere at a temperature less than 900.degree. C. for a time sufficient to oxidize the carbon powder and partially sinter the crystalline glass to form the porous substrate having closed porosity.
摘要翻译：通过将液态载体，结晶玻璃粉末和碳粉末的混合物形成浆料形成电子器件用基板的方法。然后将浆料形成所需形状，并在氧化气氛中在低于900℃的温度下加热足以氧化碳粉末并部分烧结结晶玻璃以形成具有闭孔率的多孔基材的时间。

10. 发明授权

US5352482A Process for making a high heat-conductive, thick film multi-layered circuit board 失效
标题翻译：制造高导热，厚膜多层电路板的工艺
公开(公告)号：US5352482A
公开(公告)日：1994-10-04
申请号：US131560
申请日：1993-10-04
申请人： Kazuo Kondo , Asao Morikawa
发明人： Kazuo Kondo , Asao Morikawa
IPC分类号： H01L23/14 , H01L23/15 , H01L23/373 , H05K1/03 , H05K3/46 , B05D5/12
CPC分类号： H01L23/142 , H01L23/15 , H01L23/3731 , H01L2924/0002 , H01L2924/09701 , H05K1/0306 , H05K3/4667
摘要： A high heat-conductive, thick film multilayered circuit board for high speed signal transmission in a high frequency region has a substrate having high heat conductivity. An oxidized layer is formed on a surface of the substrate. Electrically conductive layers formed of a printed paste containing crystallized glass, and insulating layers formed of a printed insulating paste containing crystallized glass as a principal constituent are alternately disposed by printing on the oxidized layer of the substrate. The conductive and insulating layers are heated to form solid layers between successive printing steps. The substrate is AlN, Sic/BeO, SiC, Cu/W and/or ZrB.sub.2 having a heat conductivity of 40-140 W/m.multidot.k at room temperature. The layers have high adhesion strength to the substrate and the insulting layer has a low dielectric constant.
摘要翻译：在高频区域中用于高速信号传输的高导热厚膜多层电路板具有导热性高的衬底。在基板的表面上形成氧化层。由包含结晶化玻璃的印刷糊料形成的导电层和由包含结晶玻璃作为主要成分的印刷绝缘膏形成的绝缘层通过印刷在衬底的氧化层上交替布置。导电和绝缘层被加热以在连续的印刷步骤之间形成固体层。基板是在室温下具有40-140W / m×k的导热率的AlN，Sic / BeO，SiC，Cu / W和/或ZrB2。这些层对基底具有高粘合强度，并且绝缘层具有低介电常数。

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