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1. 发明申请

US20160305025A1 GROUND RETURN FOR PLASMA PROCESSES 审中-公开
标题翻译：等离子体工艺的接地返回
公开(公告)号：US20160305025A1
公开(公告)日：2016-10-20
申请号：US15196751
申请日：2016-06-29
申请人： Applied Materials, Inc.
发明人： Soo Young CHOI , Robin L. TINER , Shinichi KURITA , John M. WHITE , Carl A. SORENSEN , Jeffrey A. KHO , Suhail ANWAR , Makoto INAGAWA , Gaku FURUTA
IPC分类号： C23C16/509
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

2. 发明申请

US20150364350A1 HEATING AND COOLING OF SUBSTRATE SUPPORT 审中-公开
标题翻译：基板支撑的加热和冷却
公开(公告)号：US20150364350A1
公开(公告)日：2015-12-17
申请号：US14834324
申请日：2015-08-24
申请人： Applied Materials, Inc.
发明人： John M. WHITE , Robin L. TINER
IPC分类号： H01L21/67 , C23C14/22 , C23C16/46
CPC分类号： H01L21/67103 , C23C14/22 , C23C16/4586 , C23C16/46 , C23C16/463 , H01J2237/2001 , H01L21/67109
摘要： A process chamber and a method for controlling the temperature of a substrate positioned on a substrate support assembly within the process chamber are provided. The substrate support assembly includes a thermally conductive body, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, and two or more cooling channels embedded within the thermally conductive body to be coplanar with the one or more heating elements. The cooling channels may be branched into two or more equal-length cooling passages being extended from a single point inlet and into a single point outlet to provide equal resistance cooling.
摘要翻译：提供了处理室和用于控制位于处理室内的基板支撑组件上的基板的温度的方法。衬底支撑组件包括导热体，导热体表面上的衬底支撑表面，并且适于支撑其上的大面积衬底，一个或多个嵌入导热体内的加热元件，以及两个或多个冷却通道嵌入在导热体内以与一个或多个加热元件共面。冷却通道可以分支成两个或更多个等长的冷却通道，其从单个点入口延伸到单个点出口以提供相等的电阻冷却。

3. 发明申请

US20170365449A1 RF RETURN STRAP SHIELDING COVER 审中-公开
公开(公告)号：US20170365449A1
公开(公告)日：2017-12-21
申请号：US15626960
申请日：2017-06-19
申请人： Applied Materials, Inc.
发明人： Yi CUI , Robin L. TINER , Beom Soo PARK , Soo Young CHOI , Shinichi KURITA
IPC分类号： H01J37/32 , C23C16/505 , C23C16/458 , H05K9/00 , H01L21/687
CPC分类号： H01J37/32651 , C23C16/4585 , C23C16/4586 , C23C16/505 , H01J37/32449 , H01J37/32467 , H01J37/32532 , H01J37/32577 , H01J37/32715 , H01J2237/3321 , H01L21/68742 , H01L21/68785 , H05K9/002
摘要： Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.

4. 发明申请

US20170178867A1 GAS DIFFUSER HAVING GROOVED HOLLOW CATHODES 审中-公开
公开(公告)号：US20170178867A1
公开(公告)日：2017-06-22
申请号：US15365497
申请日：2016-11-30
申请人： Applied Materials, Inc.
发明人： Jozef KUDELA , Allen K. LAU , Robin L. TINER , Gaku FURUTA , John M. WHITE , William Norman STERLING , Dongsuh LEE , Suhail ANWAR , Shinichi KURITA
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32532 , H01J2237/3321
摘要： In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions and a center region, and plurality of gas passages comprising an upstream bore and an orifice hole fluidly coupled to the upstream bore that are formed between an upstream side and a downstream side of the plate, and a plurality of grooves surrounding the gas passages, wherein a depth of the grooves varies from the edge regions to the center region of the plate.

5. 发明申请

US20170084880A1 LARGE AREA DUAL SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20170084880A1
公开(公告)日：2017-03-23
申请号：US15273181
申请日：2016-09-22
申请人： Applied Materials, Inc.
发明人： Shinichi KURITA , Ikuo MORI , Robin L. TINER
IPC分类号： H01L51/56 , H01L21/68 , C23C16/04 , C23C16/455 , C23C16/458 , H01L21/683 , H01L21/67
CPC分类号： H01L51/56 , C23C14/042 , C23C16/042 , H01L21/67103 , H01L21/6719 , H01L21/67742 , H01L21/67745 , H01L21/681 , H01L21/682
摘要： A process chamber for processing a plurality of substrates is provided. The process chamber includes a chamber body having a single substrate transfer opening, a first substrate support mesa disposed in the chamber body, and a second substrate support mesa disposed in the chamber body. Each substrate support mesa is configured to support a substrate during processing. The centers of the first substrate support mesa, the second substrate support mesa, and the opening are linearly aligned.

6. 发明申请

US20150211121A1 GAS CONFINER ASSEMBLY FOR ELIMINATING SHADOW FRAME 审中-公开
标题翻译：用于消除阴影框架的气体限制器组件
公开(公告)号：US20150211121A1
公开(公告)日：2015-07-30
申请号：US14610531
申请日：2015-01-30
申请人： Applied Materials, Inc.
发明人： Lai ZHAO , Qunhua WANG , Robin L. TINER , Soo Young CHOI , Beom Soo PARK
IPC分类号： C23C16/455 , C23C16/50 , H01J37/32 , C23C16/458
CPC分类号： C23C16/45591 , C23C16/4585 , H01J37/32449 , H01J37/32715
摘要： The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate. The material, size, shape and other features of the gas confiner assembly can be varied based on the processing requirements and associated deposition rates. In one embodiment, a gas confiner assembly for a processing chamber comprises a gas confiner configured to decrease gas flow and compensate for high deposition rates on edge regions of substrates. The gas confiner assembly also comprises a cover disposed below the gas confiner. The cover is configured to prevent a substrate support from being exposed to plasma.
摘要翻译：本公开涉及一种气体收集器组件，其被设计成通过限制气流并改变靠近基板的边缘区域的局部气流分布来减小不均匀的沉积速率。气体配制器组件的材料，尺寸，形状和其他特征可以根据加工要求和相关的沉积速率而变化。在一个实施例中，用于处理室的气体配制器组件包括配置成减小气体流量并补偿衬底边缘区域上的高沉积速率的气体配料器。气体收集器组件还包括设置在气体分配器下方的盖。盖被配置成防止基板支撑件暴露于等离子体。

7. 发明申请

US20200098549A1 HEAT CONDUCTIVE SPACER FOR PLASMA PROCESSING CHAMBER 审中-公开
公开(公告)号：US20200098549A1
公开(公告)日：2020-03-26
申请号：US16143280
申请日：2018-09-26
申请人： Applied Materials, Inc.
发明人： Beom Soo PARK , Robin L. TINER , Jianheng LI , Sang Jeong OH , Lai ZHAO , Gaku FURUTA , Soo Young CHOI , Jeevan Prakash SEQUEIRA , Wei-Ting CHEN , Hsiao-Ling YANG , Cheng-Hang HSU , Won Ho SUNG , Hyun Young HONG
IPC分类号： H01J37/32 , C23C16/505
摘要： A plasma processing chamber includes a chamber body and a lid assembly coupled to the chamber body to define a processing volume. The lid assembly includes a backing plate coupled to the chamber body, a diffuser with a plurality of openings formed therethrough, and a heat conductive spacer disposed between and coupled to the backing plate and the diffuser to transfer heat from the diffuser to the backing plate. The plasma processing chamber further includes a substrate support disposed within the processing volume.

8. 发明申请

US20170263422A1 HEATED SUBSTRATE SUPPORT 审中-公开
公开(公告)号：US20170263422A1
公开(公告)日：2017-09-14
申请号：US15288577
申请日：2016-10-07
申请人： Applied Materials, Inc.
发明人： Timothy Stuart OCHSNER , Robin L. TINER , William Norman STERLING , Jonathan R. WILLEY
IPC分类号： H01J37/32 , B23K1/00 , B23K1/19 , H05B3/02 , B23K35/28 , B23K35/362 , H05B3/00 , C25D11/16 , B23K1/20
CPC分类号： H01J37/32724 , B23K1/0008 , B23K1/0016 , B23K1/19 , B23K1/203 , B23K35/286 , B23K35/362 , B23K2101/36 , B23K2103/10 , B23K2103/18 , C23C16/4586 , C25D11/16 , H05B3/48
摘要： A substrate support and method of forming a substrate support are described herein. In one example, a substrate support includes an aluminum body having an upper surface configured to support a large area substrate, a heater element, and a filler material. The aluminum body has a groove formed therein. The heater element is disposed in the groove. The filler material is in contact with the heater element and fills the groove. The contact between the filler material and the perimeter of the heater element is the only material interface within the groove, and the filler material has a larger grain size than a grain size of the aluminum body.

9. 发明申请

US20160056019A1 PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN 审中-公开
标题翻译：气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20160056019A1
公开(公告)日：2016-02-25
申请号：US14932618
申请日：2015-11-04
申请人： Applied Materials, Inc.
发明人： Soo Young CHOI , John M. WHITE , Qunhua WANG , Li Hou , Ki Woon KIM , Shinichi KURITA , Tae Kyung WON , Suhail ANWAR , Beom Soo Park , Robin L. TINER
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

10. 发明申请

US20160032451A1 REMOTE PLASMA CLEAN SOURCE FEED BETWEEN BACKING PLATE AND DIFFUSER 审中-公开
标题翻译：远程等离子清洁源在背板和差速器之间进给
公开(公告)号：US20160032451A1
公开(公告)日：2016-02-04
申请号：US14446098
申请日：2014-07-29
申请人： Applied Materials, Inc.
发明人： Shinichi KURITA , Robin L. TINER , Suhail ANWAR
IPC分类号： C23C16/44 , B08B7/00
CPC分类号： C23C16/4405 , C23C16/345 , C23C16/452 , C23C16/45565 , C23C16/4586 , C23C16/505 , H01J37/32357 , H01J37/3244 , H01J37/32853 , H01J37/32862
摘要： Embodiments of the present disclosure provide an apparatus having a remote plasma clean source in which the remote plasma clean source delivers radicals from the remotely generated plasma to the chamber at a location disposed between a backing plate and a diffuser.
摘要翻译：本公开的实施例提供了一种具有远程等离子体清洁源的装置，其中远程等离子体清洁源在设置在背板和扩散器之间的位置处将远离等离子体的等离子体的基团输送到室。

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