基本信息:
- 专利标题： LARGE AREA DUAL SUBSTRATE PROCESSING SYSTEM
- 申请号：US15273181 申请日：2016-09-22
- 公开(公告)号：US20170084880A1 公开(公告)日：2017-03-23
- 发明人： Shinichi KURITA , Ikuo MORI , Robin L. TINER
- 申请人： Applied Materials, Inc.
- 主分类号： H01L51/56
- IPC分类号： H01L51/56 ; H01L21/68 ; C23C16/04 ; C23C16/455 ; C23C16/458 ; H01L21/683 ; H01L21/67
摘要：
A process chamber for processing a plurality of substrates is provided. The process chamber includes a chamber body having a single substrate transfer opening, a first substrate support mesa disposed in the chamber body, and a second substrate support mesa disposed in the chamber body. Each substrate support mesa is configured to support a substrate during processing. The centers of the first substrate support mesa, the second substrate support mesa, and the opening are linearly aligned.