专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5491284A Nude mouse model for neoplastic disease 失效
标题翻译：裸鼠模型为肿瘤性疾病
公开(公告)号：US5491284A
公开(公告)日：1996-02-13
申请号：US169735
申请日：1993-12-17
申请人： Ann Monosov , Xinyu Fu
发明人： Ann Monosov , Xinyu Fu
IPC分类号： A01K67/027 , C12N5/09 , C12N15/85 , A61K35/00 , A61K49/00
CPC分类号： A01K67/0271 , C12N5/0693
摘要： A nude mouse model for human neoplastic disease having histologically intact human neoplastic tissue transplanted onto an organ of the mouse which corresponds to the human organ from which the tissue is obtained.
摘要翻译：用于人肿瘤性疾病的裸小鼠模型，其具有移植到小鼠器官上的组织学上完整的人肿瘤组织，其对应于获得组织的人器官。

2. 发明授权

US5569812A Nude mouse model for human neoplastic disease 失效
标题翻译：人类肿瘤性疾病的裸鼠模型
公开(公告)号：US5569812A
公开(公告)日：1996-10-29
申请号：US459730
申请日：1995-06-02
申请人： Ann Monosov , Xinyu Fu
发明人： Ann Monosov , Xinyu Fu
IPC分类号： A01K67/027 , C12N5/09 , C12N15/85 , A61K35/00 , A61K49/00
CPC分类号： A01K67/0271 , C12N5/0693
摘要： A nude mouse model for human neoplastic disease having histologically intact human neoplastic tissue transplanted onto an organ of the mouse which corresponds to the human organ from which the tissue is obtained.
摘要翻译：用于人肿瘤性疾病的裸小鼠模型，其具有移植到小鼠器官上的组织学上完整的人肿瘤组织，其对应于获得组织的人器官。

3. 再颁专利

USRE39337E1 Nude mouse model for human neoplastic disease 失效
标题翻译：人类肿瘤性疾病的裸鼠模型
公开(公告)号：USRE39337E1
公开(公告)日：2006-10-10
申请号：US09023232
申请日：1998-02-13
申请人： Ann Monosov , Xinyu Fu
发明人： Ann Monosov , Xinyu Fu
IPC分类号： A01K67/00 , A61K35/12 , A61K35/36 , A61K35/42 , A61K49/00
CPC分类号： A01K67/0271 , C12N5/0693
摘要： A nude mouse model for human neoplastic diseases having histologically intact human neoplastic tissue transplanted onto an organ of the mouse which corresponds to the human organ from which the tissue is obtained.
摘要翻译：用于人类肿瘤疾病的裸小鼠模型，其具有移植到小鼠器官上的组织学上完整的人肿瘤组织，其对应于获得组织的人器官。

4. 发明申请

US20120121799A1 Method For Segregating The Alloying Elements And Reducing The Residue Resistivity Of Copper Alloy Layers 有权
标题翻译：分离合金元素并降低铜合金层残留电阻率的方法
公开(公告)号：US20120121799A1
公开(公告)日：2012-05-17
申请号：US12945445
申请日：2010-11-12
申请人： Xinyu Fu , Jick M. Yu
发明人： Xinyu Fu , Jick M. Yu
IPC分类号： H05K3/22
CPC分类号： H01L23/53233 , H01L21/76831 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer.
摘要翻译：公开了在用于微电子器件的衬底上形成互连或互连的方法。在一个或多个实施例中，该方法包括在电介质层中沉积包含Cu和合金元素（例如Mn）的合金层，并将合金元素与合金层的本体Cu部分分离或扩散。在一个或多个实施例中，该方法包括在原子氢气氛中退火合金层。退火后，合金层的电阻率基本上等于纯Cu层的电阻率。

5. 发明授权

US07704887B2 Remote plasma pre-clean with low hydrogen pressure 有权
标题翻译：远程等离子体预清洁，氢气压力低
公开(公告)号：US07704887B2
公开(公告)日：2010-04-27
申请号：US11334803
申请日：2006-01-17
申请人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
发明人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.
摘要翻译：一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。远程等离子体源产生主要为氢自由基的等离子体。氢气压力可以保持相对较低，例如在30毫乇。任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

6. 发明授权

US07658802B2 Apparatus and a method for cleaning a dielectric film 有权
标题翻译：用于清洁电介质膜的装置和方法
公开(公告)号：US07658802B2
公开(公告)日：2010-02-09
申请号：US11284775
申请日：2005-11-22
申请人： Xinyu Fu , John Forster , Wei W. Wang
发明人： Xinyu Fu , John Forster , Wei W. Wang
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , H01J37/32357 , H01J37/32422 , H01J37/3266
摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.
摘要翻译：在本发明中提供了一种清洁电介质膜的装置和方法。在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到室主体，以及邻近通道设置的至少一个磁体。在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

7. 发明申请

US20070113868A1 Apparatus and a method for cleaning a dielectric film 有权
标题翻译：用于清洁电介质膜的装置和方法
公开(公告)号：US20070113868A1
公开(公告)日：2007-05-24
申请号：US11284775
申请日：2005-11-22
申请人： Xinyu Fu , John Forster , Wei Wang
发明人： Xinyu Fu , John Forster , Wei Wang
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , H01J37/32357 , H01J37/32422 , H01J37/3266
摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.
摘要翻译：在本发明中提供了一种清洁电介质膜的装置和方法。在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到室主体，以及邻近通道设置的至少一个磁体。在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

8. 发明授权

US08852674B2 Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers 有权
标题翻译：分离合金元素并降低铜合金层残留电阻率的方法
公开(公告)号：US08852674B2
公开(公告)日：2014-10-07
申请号：US12945445
申请日：2010-11-12
申请人： Xinyu Fu , Jick M. Yu
发明人： Xinyu Fu , Jick M. Yu
IPC分类号： C23C18/00 , H01L23/532 , H01L21/768
CPC分类号： H01L23/53233 , H01L21/76831 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer.
摘要翻译：公开了在用于微电子器件的衬底上形成互连或互连的方法。在一个或多个实施例中，该方法包括在电介质层中沉积包含Cu和合金元素（例如Mn）的合金层，并将合金元素与合金层的本体Cu部分分离或扩散。在一个或多个实施例中，该方法包括在原子氢气氛中退火合金层。退火后，合金层的电阻率基本上等于纯Cu层的电阻率。

9. 发明授权

US08772162B2 Method for removing native oxide and associated residue from a substrate 有权
标题翻译：从底物中除去天然氧化物和相关残留物的方法
公开(公告)号：US08772162B2
公开(公告)日：2014-07-08
申请号：US13906543
申请日：2013-05-31
申请人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
发明人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , H01J37/32082 , H01L21/02057 , H01L21/0206 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/743 , H01L21/768
摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.
摘要翻译：通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜，含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

10. 发明授权

US08580354B2 Plasma treatment of substrates prior to deposition 失效
标题翻译：在沉积之前对衬底进行等离子体处理
公开(公告)号：US08580354B2
公开(公告)日：2013-11-12
申请号：US13209760
申请日：2011-08-15
申请人： Xinyu Fu , Jick M. Yu
发明人： Xinyu Fu , Jick M. Yu
IPC分类号： C23C14/02 , C23C14/16 , C23C14/58 , B05D3/06 , H05H1/24 , H05H1/46 , C23C14/18
CPC分类号： C23C16/0245 , H01J37/32357
摘要： A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.
摘要翻译：一种等离子体处理室，特别适用于在沉积其它层之前预处理低k电介质膜和难以处理的金属薄膜。远程等离子体源（RPS）将处理气体激发到等离子体中并将其通过供应管输送到喷头面板背面的歧管。当氧气和氢气选择性地供应给RPS时，该室被配置用于在相同或不同的过程中氧化和还原等离子体。供应管和喷头可以由介电氧化物形成，其可以由远程等离子体源的水蒸汽等离子体钝化。在一个新颖的方法中，通过交替的氢和氧的中性等离子体在难熔金属上形成保护性氢氧化物涂层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式