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    • 1. 发明授权
    • Vehicle lamp controller
    • 车灯控制器
    • US08866388B2
    • 2014-10-21
    • US13534646
    • 2012-06-27
    • Akitaka KanamoriKentaro TaniNaoki Tatara
    • Akitaka KanamoriKentaro TaniNaoki Tatara
    • B60Q1/02B60Q1/14B60Q11/00B60Q1/08
    • B60Q11/00B60Q1/08B60Q1/143B60Q2300/146
    • A vehicle lamp controller includes a lamp control unit that performs lamp control, in which light amount or light distribution of each of a plurality of lamps to be provided on a vehicle that runs on electric power from a battery, is controlled, according to a priority that is assigned to each of the plurality of lamps, wherein the priorities are determined based on degrees of necessity of the plurality of lamps in securing safety for the vehicle. The vehicle lamp controller may further include a remaining battery charge detecting device for detecting a remaining charge of a battery, and the lamp control unit may be configured to perform the lamp control according to the priorities when the remaining charge becomes lower than a predetermined threshold.
    • 车辆灯控制器包括灯控制单元,其执行灯控制,其中根据优先级来控制要设置在来自电池的电力上运行的车辆上的多个灯中的每一个的光量或光分布 其被分配给多个灯中的每一个,其中基于确保车辆的安全性的多个灯的必要性来确定优先级。 车辆灯控制器还可以包括用于检测电池的剩余电量的剩余电池电量检测装置,并且灯控制单元可以被配置为当剩余电荷低于预定阈值时根据优先级执行灯控制。
    • 7. 发明申请
    • Nitride semiconductor laser chip and method of fabricating same
    • 氮化物半导体激光芯片及其制造方法
    • US20090168827A1
    • 2009-07-02
    • US12318237
    • 2008-12-23
    • Toshiyuki KawakamiTakeshi KamikawaKentaro Tani
    • Toshiyuki KawakamiTakeshi KamikawaKentaro Tani
    • H01S5/00H01L21/02
    • H01S5/16B82Y20/00H01S5/0202H01S5/0425H01S5/2201H01S5/34333
    • A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L1 away from the light emission mirror facet. The thickness d of the p-side ohmic contact and the distance L1 from the p-side ohmic contact to the light emission mirror facet are adjusted such that the amount of current injected into the light emission mirror facet is 20% or more but 70% or less of the amount of current injected into an area directly below the p-side pad contact.
    • 提供了一种氮化物半导体激光器芯片,其不仅可以提高其COD水平,而且可以防止其I-L特性曲线急剧上升,并且可以降低工作电压。 氮化物半导体激光器芯片包括构成氮化物半导体层并形成在n型GaN衬底上的层,包括发光镜面和光反射镜面的镜面,形成在上接触层上的p侧欧姆接触到 到达镜面和在远离发光镜面的距离L1的区域中形成的p侧焊盘触点。 调整p侧欧姆接触的厚度d和从p侧欧姆接触到发光镜面的距离L1,使得注入发光镜面的电流量为20%以上且70% 或更少的注入到p侧焊盘触点正下方的区域的电流量。
    • 9. 发明授权
    • Semiconductor light emitting device and method for producing the same
    • 半导体发光器件及其制造方法
    • US07042023B2
    • 2006-05-09
    • US10625234
    • 2003-07-22
    • Kentaro Tani
    • Kentaro Tani
    • H01L21/00H01L33/00
    • H01S5/22H01L33/145H01S5/209H01S5/2201H01S5/2226H01S5/2231H01S5/32325
    • A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridge structure. The stacked semiconductor structure includes a first semiconductor clad layer, a semiconductor active layer, a second semiconductor clad layer, and a semiconductor etching stop layer. The striped ridge structure includes a third semiconductor clad layer, a semiconductor intermediate layer, and a semiconductor cap layer. The striped ridge structure is provided on the semiconductor etching stop layer. An interface between the semiconductor current confinement layer and the semiconductor etching stop layer and an interface between the semiconductor current confinement layer and the striped ridge structure each have a content of impurities of less than 1×1017/cm3.
    • 半导体发光器件包括半导体衬底; 形成在所述半导体衬底上的层叠半导体结构; 条纹脊结构; 以及设置在条纹脊结构的侧面上的半导体电流限制层。 堆叠的半导体结构包括第一半导体包覆层,半导体有源层,第二半导体包覆层和半导体蚀刻停止层。 条纹脊结构包括第三半导体包覆层,半导体中间层和半导体盖层。 在半导体蚀刻停止层上设置条纹脊结构。 半导体电流限制层和半导体蚀刻停止层之间的界面以及半导体电流限制层和条纹脊结构之间的界面各自具有小于1×10 17 / cm 2的杂质含量 > 3