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1. 发明授权

US08866388B2 Vehicle lamp controller 有权
标题翻译：车灯控制器
公开(公告)号：US08866388B2
公开(公告)日：2014-10-21
申请号：US13534646
申请日：2012-06-27
申请人： Akitaka Kanamori , Kentaro Tani , Naoki Tatara
发明人： Akitaka Kanamori , Kentaro Tani , Naoki Tatara
IPC分类号： B60Q1/02 , B60Q1/14 , B60Q11/00 , B60Q1/08
CPC分类号： B60Q11/00 , B60Q1/08 , B60Q1/143 , B60Q2300/146
摘要： A vehicle lamp controller includes a lamp control unit that performs lamp control, in which light amount or light distribution of each of a plurality of lamps to be provided on a vehicle that runs on electric power from a battery, is controlled, according to a priority that is assigned to each of the plurality of lamps, wherein the priorities are determined based on degrees of necessity of the plurality of lamps in securing safety for the vehicle. The vehicle lamp controller may further include a remaining battery charge detecting device for detecting a remaining charge of a battery, and the lamp control unit may be configured to perform the lamp control according to the priorities when the remaining charge becomes lower than a predetermined threshold.
摘要翻译：车辆灯控制器包括灯控制单元，其执行灯控制，其中根据优先级来控制要设置在来自电池的电力上运行的车辆上的多个灯中的每一个的光量或光分布其被分配给多个灯中的每一个，其中基于确保车辆的安全性的多个灯的必要性来确定优先级。车辆灯控制器还可以包括用于检测电池的剩余电量的剩余电池电量检测装置，并且灯控制单元可以被配置为当剩余电荷低于预定阈值时根据优先级执行灯控制。

2. 发明授权

US08487535B2 Automotive headlamp apparatus controlling light distribution pattern 有权
标题翻译：汽车前照灯装置控制配光模式
公开(公告)号：US08487535B2
公开(公告)日：2013-07-16
申请号：US12836469
申请日：2010-07-14
申请人： Kentaro Tani , Noriko Sato , Motohiro Komatsu , Hidetada Tanaka , Hiroyuki Ishida , Naoki Uchida , Takuya Kotajima
发明人： Kentaro Tani , Noriko Sato , Motohiro Komatsu , Hidetada Tanaka , Hiroyuki Ishida , Naoki Uchida , Takuya Kotajima
IPC分类号： B60Q1/04
CPC分类号： B60Q1/1423 , B60Q2300/054 , B60Q2300/056 , B60Q2300/322 , B60Q2300/332 , B60Q2300/41 , B60Q2300/42 , B60Q2300/45 , F21S41/663
摘要： An automotive headlamp apparatus comprises: a lamp unit configured to be capable of forming an additional light distribution pattern that includes an upper area above the cut-off line of a light distribution pattern for low beam and that is divided into a plurality of individual patterns; and a controller configured to control formation of each of the individual patterns in accordance with presence of a forward vehicle. The controller reduces the illuminance of an individual pattern overlapping an area where a forward vehicle is present and increases the illuminance of at least one of other individual patterns.
摘要翻译：一种汽车前照灯装置，包括：灯单元，被配置为能够形成附加配光图案，所述附加配光图案包括用于近光的配光图案的截止线上方的上部区域，并且被分成多个单独图案; 以及控制器，其被配置为根据前方车辆的存在来控制每个所述各个车型的形成。控制器减少与前方车辆存在的区域重叠的个体图案的照度，并且增加其他单独图案中的至少一个的照度。

3. 发明授权

US6002701A Self-pulsation type semiconductor laser device 失效
标题翻译：自脉冲型半导体激光器件
公开(公告)号：US6002701A
公开(公告)日：1999-12-14
申请号：US771150
申请日：1996-12-20
申请人： Yasuo Kan , Kentaro Tani , Tadashi Takeoka , Akiyoshi Sugahara
发明人： Yasuo Kan , Kentaro Tani , Tadashi Takeoka , Akiyoshi Sugahara
IPC分类号： H01S5/00 , H01S5/065 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/2219
摘要： A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.
摘要翻译：自脉动型半导体激光器件包括第一导电类型的半导体衬底和至少包括设置在半导体衬底上的有源层的多层结构。多层结构包括设置在有源层下方的第一导电类型的第一包层，具有设置在有源层上方的条纹脊部的第二导电类型的第二包层和设置在第二包层上的可饱和吸收膜。可饱和吸收膜包括用于积聚光激发载流子的积聚区域。蓄积区域与第二包覆层的表面分开设置。

4. 发明授权

US08358675B2 Nitride semiconductor laser device and wafer 有权
标题翻译：氮化物半导体激光器件和晶圆
公开(公告)号：US08358675B2
公开(公告)日：2013-01-22
申请号：US12801800
申请日：2010-06-25
申请人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
发明人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
IPC分类号： H01S3/097
CPC分类号： H01S5/06226 , G11B7/127 , G11B7/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/2222 , H01S5/32341
摘要： Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
摘要翻译：提供了一种减小电容以获得更好响应的氮化物半导体激光器件。氮化物半导体激光器件包括：有源层; 层叠在有源层上的上包层; 层叠在上包层上方的低介电常数绝缘膜; 以及堆叠在低介电常数绝缘膜之上的焊盘电极。

5. 发明授权

US5337326A Semiconductor laser device with compressively stressed barrier layer 失效
标题翻译：具有压应力阻挡层的半导体激光器件
公开(公告)号：US5337326A
公开(公告)日：1994-08-09
申请号：US953458
申请日：1992-09-29
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/32 , H01S5/3201 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser device includes a substrate; a double hetero structure having an n-type cladding layer, an active layer, and a p-type cladding layer, which is formed on an upper face of the substrate; and electrodes formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch.
摘要翻译：半导体激光装置包括：基板; 形成在基板的上表面上的具有n型包覆层，有源层和p型覆层的双异质结构; 以及形成在所述基板的下表面上和所述双异质结构的上表面上的电极，其中所述双异质结构还包括形成在所述p型覆层和所述有源层之间的p型异质势垒层，由于晶格失配而被压缩而变形。

6. 发明申请

US20110317733A1 Nitride semiconductor laser chip and method of fabrication thereof 有权
标题翻译：氮化物半导体激光芯片及其制造方法
公开(公告)号：US20110317733A1
公开(公告)日：2011-12-29
申请号：US13067747
申请日：2011-06-23
申请人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
发明人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
IPC分类号： H01S5/22 , H01L33/32 , H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0655 , H01S5/22 , H01S5/3063 , H01S5/3211 , H01S2301/176
摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.
摘要翻译：以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。脊部的脊宽度为2μm以上且6μm以下。

7. 发明申请

US20090168827A1 Nitride semiconductor laser chip and method of fabricating same 审中-公开
标题翻译：氮化物半导体激光芯片及其制造方法
公开(公告)号：US20090168827A1
公开(公告)日：2009-07-02
申请号：US12318237
申请日：2008-12-23
申请人： Toshiyuki Kawakami , Takeshi Kamikawa , Kentaro Tani
发明人： Toshiyuki Kawakami , Takeshi Kamikawa , Kentaro Tani
IPC分类号： H01S5/00 , H01L21/02
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/2201 , H01S5/34333
摘要： A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L1 away from the light emission mirror facet. The thickness d of the p-side ohmic contact and the distance L1 from the p-side ohmic contact to the light emission mirror facet are adjusted such that the amount of current injected into the light emission mirror facet is 20% or more but 70% or less of the amount of current injected into an area directly below the p-side pad contact.
摘要翻译：提供了一种氮化物半导体激光器芯片，其不仅可以提高其COD水平，而且可以防止其I-L特性曲线急剧上升，并且可以降低工作电压。氮化物半导体激光器芯片包括构成氮化物半导体层并形成在n型GaN衬底上的层，包括发光镜面和光反射镜面的镜面，形成在上接触层上的p侧欧姆接触到到达镜面和在远离发光镜面的距离L1的区域中形成的p侧焊盘触点。调整p侧欧姆接触的厚度d和从p侧欧姆接触到发光镜面的距离L1，使得注入发光镜面的电流量为20％以上且70％或更少的注入到p侧焊盘触点正下方的区域的电流量。

8. 发明授权

US07300247B2 Axial flow turbine 有权
标题翻译：轴流式涡轮机
公开(公告)号：US07300247B2
公开(公告)日：2007-11-27
申请号：US11392956
申请日：2006-03-30
申请人： Daisuke Nomura , Sakae Kawasaki , Akihiro Onoda , Kentaro Tani , Hiroshi Kawakami
发明人： Daisuke Nomura , Sakae Kawasaki , Akihiro Onoda , Kentaro Tani , Hiroshi Kawakami
IPC分类号： F01D9/02
CPC分类号： F01D5/145 , F01D9/02
摘要： An axial flow turbine provided with a stage composed of a turbine nozzle and a turbine rotor blade arranged in an axial flow direction. Both end portions of a nozzle blade of the turbine nozzle are supported by a diaphragm inner ring and a diaphragm outer ring, and a flow passage is formed to have its diameter expanded from an upstream stage to a downstream stage. In such axial flow turbine, trailing edges at ends of the nozzle blade supported by the diaphragm inner ring and the diaphragm outer ring are curved as a curvature to an outlet side, and an intermediate portion between the trailing edges is formed to be straight.
摘要翻译：一种轴流涡轮机，其具有由涡轮喷嘴构成的台架和沿轴向流动方向配置的涡轮机转子叶片。涡轮喷嘴的喷嘴叶片的两端部由隔膜内圈和隔膜外圈支撑，形成从上游侧到下游侧的直径扩大的流路。在这种轴流式涡轮机中，由隔膜内圈和隔膜外圈支撑的喷嘴的端部处的后缘作为曲率弯曲到出口侧，并且后缘之间的中间部分形成为直的。

9. 发明授权

US07042023B2 Semiconductor light emitting device and method for producing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07042023B2
公开(公告)日：2006-05-09
申请号：US10625234
申请日：2003-07-22
申请人： Kentaro Tani
发明人： Kentaro Tani
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01S5/22 , H01L33/145 , H01S5/209 , H01S5/2201 , H01S5/2226 , H01S5/2231 , H01S5/32325
摘要： A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridge structure. The stacked semiconductor structure includes a first semiconductor clad layer, a semiconductor active layer, a second semiconductor clad layer, and a semiconductor etching stop layer. The striped ridge structure includes a third semiconductor clad layer, a semiconductor intermediate layer, and a semiconductor cap layer. The striped ridge structure is provided on the semiconductor etching stop layer. An interface between the semiconductor current confinement layer and the semiconductor etching stop layer and an interface between the semiconductor current confinement layer and the striped ridge structure each have a content of impurities of less than 1×1017/cm3.
摘要翻译：半导体发光器件包括半导体衬底; 形成在所述半导体衬底上的层叠半导体结构; 条纹脊结构; 以及设置在条纹脊结构的侧面上的半导体电流限制层。堆叠的半导体结构包括第一半导体包覆层，半导体有源层，第二半导体包覆层和半导体蚀刻停止层。条纹脊结构包括第三半导体包覆层，半导体中间层和半导体盖层。在半导体蚀刻停止层上设置条纹脊结构。半导体电流限制层和半导体蚀刻停止层之间的界面以及半导体电流限制层和条纹脊结构之间的界面各自具有小于1×10 17 / cm 2的杂质含量 > 3 。

10. 发明授权

US08379682B2 Nitride semiconductor laser chip and method of fabrication thereof 有权
标题翻译：氮化物半导体激光芯片及其制造方法
公开(公告)号：US08379682B2
公开(公告)日：2013-02-19
申请号：US13067747
申请日：2011-06-23
申请人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
发明人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
IPC分类号： H01S3/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0655 , H01S5/22 , H01S5/3063 , H01S5/3211 , H01S2301/176
摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.
摘要翻译：以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。脊部的脊宽度为2μm以上且6μm以下。

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