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1. 发明授权

US6002701A Self-pulsation type semiconductor laser device 失效
标题翻译：自脉冲型半导体激光器件
公开(公告)号：US6002701A
公开(公告)日：1999-12-14
申请号：US771150
申请日：1996-12-20
申请人： Yasuo Kan , Kentaro Tani , Tadashi Takeoka , Akiyoshi Sugahara
发明人： Yasuo Kan , Kentaro Tani , Tadashi Takeoka , Akiyoshi Sugahara
IPC分类号： H01S5/00 , H01S5/065 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/2219
摘要： A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.
摘要翻译：自脉动型半导体激光器件包括第一导电类型的半导体衬底和至少包括设置在半导体衬底上的有源层的多层结构。多层结构包括设置在有源层下方的第一导电类型的第一包层，具有设置在有源层上方的条纹脊部的第二导电类型的第二包层和设置在第二包层上的可饱和吸收膜。可饱和吸收膜包括用于积聚光激发载流子的积聚区域。蓄积区域与第二包覆层的表面分开设置。

2. 发明授权

US07371595B2 Method for manufacturing semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US07371595B2
公开(公告)日：2008-05-13
申请号：US11262548
申请日：2005-10-28
申请人： Atsuo Tsunoda , Akiyoshi Sugahara
发明人： Atsuo Tsunoda , Akiyoshi Sugahara
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/3211 , H01S5/34326
摘要： A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.
摘要翻译：提供了一种制造半导体激光器件的方法，其中抑制了盖层和第三覆层的变形，并且去除了中间层的突出部分。通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层，不可避免地至少去除第三包层，并且在第二蚀刻步骤中蚀刻中间层和覆盖层，突出部分除去中间层，并且防止盖层被不期望地蚀刻，由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部，并且增加操作电压并减小外部微分量子防止效率。

3. 发明申请

US20060094141A1 Method for manufacturing semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US20060094141A1
公开(公告)日：2006-05-04
申请号：US11262548
申请日：2005-10-28
申请人： Atsuo Tsunoda , Akiyoshi Sugahara
发明人： Atsuo Tsunoda , Akiyoshi Sugahara
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/3211 , H01S5/34326
摘要： A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.
摘要翻译：提供了一种制造半导体激光器件的方法，其中抑制了盖层和第三覆层的变形，并且去除了中间层的突出部分。通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层，不可避免地至少去除第三包层，并且在第二蚀刻步骤中蚀刻中间层和覆盖层，突出部分除去中间层，并且防止盖层被不期望地蚀刻，由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部，并且增加操作电压并减小外部微分量子防止效率。

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