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1. 发明申请

US20130001634A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20130001634A1
公开(公告)日：2013-01-03
申请号：US13611924
申请日：2012-09-12
申请人： Mayuko FUDETA , Atsuo Tsunoda
发明人： Mayuko FUDETA , Atsuo Tsunoda
IPC分类号： H01L33/32
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.

2. 发明授权

US08324639B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08324639B2
公开(公告)日：2012-12-04
申请号：US11882826
申请日：2007-08-06
申请人： Mayuko Fudeta , Atsuo Tsunoda
发明人： Mayuko Fudeta , Atsuo Tsunoda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
摘要翻译：氮化物半导体发光器件依次包括导电衬底，第一金属层，第二导电型半导体层，发光层和第一导电型半导体层。氮化物半导体发光器件还具有覆盖第二导电型半导体层，发光层和第一导电型半导体层的至少侧面的绝缘层。提供了制造该方法的方法。氮化物半导体发光器件还可以包括第二金属层。因此，提供了可靠的氮化物半导体发光器件及其制造方法，其中与传统示例相比，PN结部分处的短路和电流泄漏被降低。

3. 发明申请

US20080035949A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080035949A1
公开(公告)日：2008-02-14
申请号：US11882826
申请日：2007-08-06
申请人： Mayuko Fudeta , Atsuo Tsunoda
发明人： Mayuko Fudeta , Atsuo Tsunoda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
摘要翻译：氮化物半导体发光器件依次包括导电衬底，第一金属层，第二导电型半导体层，发光层和第一导电型半导体层。氮化物半导体发光器件还具有覆盖第二导电型半导体层，发光层和第一导电型半导体层的至少侧面的绝缘层。提供了制造该方法的方法。氮化物半导体发光器件还可以包括第二金属层。因此，提供了可靠的氮化物半导体发光器件及其制造方法，其中与传统示例相比，PN结部分处的短路和电流泄漏被降低。

4. 发明授权

US06999488B2 Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor 失效
标题翻译：能够防止阈值电流和工作电流的半导体激光装置的增加和制造方法
公开(公告)号：US06999488B2
公开(公告)日：2006-02-14
申请号：US10602827
申请日：2003-06-25
申请人： Atsuo Tsunoda
发明人： Atsuo Tsunoda
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2201 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S2301/173 , H01S2304/02
摘要： A ridge section constructed of a p-type second AlGaInP clad layer 8, a p-type GaInP interlayer 9 and a p-type GaAs cap layer 10 is formed on an etching stop layer 7. A step of not smaller than 0.13 μm is formed between the p-type interlayer 9 and the p-type second clad layer 8 by making the p-type interlayer 9 protrude in both widthwise directions beyond the p-type second clad layer 8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer 13 located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer 13 effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.
摘要翻译：在蚀刻停止层7上形成由p型第二AlGaInP包覆层8，p型GaInP夹层9和p型GaAs覆盖层10构成的脊部。通过使p型中间层9在宽度方向上突出超过p型第二覆盖层8，在p型中间层9和p型第二覆盖层8之间形成不小于0.13μm的台阶。通过该步骤，AlInP层可以在脊部两侧和脊部两侧彼此分开形成。因此，当通过蚀刻去除脊部上的AlInP层时，位于脊部两侧的AlInP电流收缩层13可靠地被抗蚀剂膜保护而不被过度蚀刻。 AlInP电流收缩层13有效地使电流收缩功能起作用，从而获得低阈值电流和低功耗的半导体激光器件。

5. 发明授权

US5027169A Semiconductor device with substrate misorientation 失效
标题翻译：具有衬底取向偏移的半导体器件
公开(公告)号：US5027169A
公开(公告)日：1991-06-25
申请号：US531386
申请日：1990-06-01
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Masafumi Kondo , Takahiro Suyama
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Masafumi Kondo , Takahiro Suyama
IPC分类号： H01L21/203 , B82Y10/00 , B82Y40/00 , H01L21/20 , H01L29/04
CPC分类号： H01L33/16 , B82Y20/00 , H01L21/02392 , H01L21/02395 , H01L21/02398 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L29/045 , H01L33/0062 , H01L33/06
摘要： A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.

6. 发明授权

US4402572A Projection device 失效
标题翻译：投影设备
公开(公告)号：US4402572A
公开(公告)日：1983-09-06
申请号：US166964
申请日：1980-07-08
申请人： Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui
发明人： Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui
IPC分类号： G03B27/50 , G02B3/00 , G02B7/00 , G02B13/24 , G02B27/18 , G03B27/52 , G02B27/62 , G03G15/04
CPC分类号： G02B3/0056 , G02B13/24 , G03B27/525
摘要： This specification discloses a projection device in which bar lenses of plastic, each having a great length in the direction of its optical axis as compared with its effective diameter, of the lenses are arranged in the form of a predetermined array. The bar lenses are shielded from the outside atmosphere by a holding member capable of easily setting the lenses. Further, transparent plates, such as glass plates or the like, are provided at the incidence end and the emergence end to seal the holding member, so that there occurs no deterioration of the predetermined optical performance resulting from variations in the environmental humidity which would otherwise cause variations in the plastic material.
摘要翻译：本说明书公开了一种投影装置，其中透镜的条形透镜在其光轴的方向上与其有效直径相比具有大的长度，以预定阵列的形式布置。条形透镜通过能够容易地设置透镜的保持构件与外界气氛隔离。此外，在入射端和出射端设置透明板，例如玻璃板等，以密封保持构件，从而不会由于环境湿度的变化而导致的预定光学性能的劣化，否则将导致环境湿度的变化。造成塑料材料的变化。

7. 发明申请

US20060094141A1 Method for manufacturing semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US20060094141A1
公开(公告)日：2006-05-04
申请号：US11262548
申请日：2005-10-28
申请人： Atsuo Tsunoda , Akiyoshi Sugahara
发明人： Atsuo Tsunoda , Akiyoshi Sugahara
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/3211 , H01S5/34326
摘要： A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.
摘要翻译：提供了一种制造半导体激光器件的方法，其中抑制了盖层和第三覆层的变形，并且去除了中间层的突出部分。通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层，不可避免地至少去除第三包层，并且在第二蚀刻步骤中蚀刻中间层和覆盖层，突出部分除去中间层，并且防止盖层被不期望地蚀刻，由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部，并且增加操作电压并减小外部微分量子防止效率。

8. 发明申请

US20050100067A1 Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor 失效
标题翻译：能够防止阈值电流和工作电流的半导体激光装置的增加和制造方法
公开(公告)号：US20050100067A1
公开(公告)日：2005-05-12
申请号：US10602827
申请日：2003-06-25
申请人： Atsuo Tsunoda
发明人： Atsuo Tsunoda
IPC分类号： H01S5/227 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2201 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S2301/173 , H01S2304/02
摘要： A ridge section constructed of a p-type second AlGaInP clad layer 8, a p-type GaInP interlayer 9 and a p-type GaAs cap layer 10 is formed on an etching stop layer 7. A step of not smaller than 0.13 μm is formed between the p-type interlayer 9 and the p-type second clad layer 8 by making the p-type interlayer 9 protrude in both widthwise directions beyond the p-type second clad layer 8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer 13 located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer 13 effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.
摘要翻译：在蚀刻停止层7上形成由p型第二AlGaInP包覆层8，p型GaInP夹层9和p型GaAs覆盖层10构成的脊部。通过使p型中间层9在宽度方向上突出超过p型第二覆盖层8，在p型中间层9和p型第二覆盖层8之间形成不小于0.13μm的台阶。通过该步骤，AlInP层可以在脊部两侧和脊部两侧彼此分开形成。因此，当通过蚀刻去除脊部上的AlInP层时，位于脊部两侧的AlInP电流收缩层13可靠地被抗蚀剂膜保护而不被过度蚀刻。 AlInP电流收缩层13有效地使电流收缩功能起作用，从而获得低阈值电流和低功耗的半导体激光器件。

9. 发明授权

US5360762A Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效
标题翻译：半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5360762A
公开(公告)日：1994-11-01
申请号：US080004
申请日：1993-06-21
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
摘要翻译：在GaAs衬底（AlYGa1-Y）上，形成与衬底晶格匹配的0.5In0.5P晶体层（0≤Y≤1）。通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度，将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层（0 < / = Y <1），其上形成有AlXGa1-XAs晶体层（0≤X≤1）的几个分子的厚度。由于AlYGa1-YAs晶体层的表面已经被剥离，所形成的AlXGa1-XAs晶体层具有高结晶度，从而能够以高效率制造发光二极管，半导体激光器件等。

10. 发明授权

US4350431A Projecting device 失效
标题翻译：投影设备
公开(公告)号：US4350431A
公开(公告)日：1982-09-21
申请号：US166849
申请日：1980-07-08
申请人： Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui , Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki
发明人： Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui , Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki
IPC分类号： G02B3/00 , G02B27/00 , G02B27/18 , G03B27/52 , G03B27/00 , G03B27/44
CPC分类号： G02B3/0062 , G02B27/18 , G02B3/0075 , G03B27/522 , G02B27/0018 , G02B3/0056 , G02B3/0087
摘要： A projecting device having an array, in a plane perpendicular to the optical axis, of plural element lens systems each axially provided with two bar lenses of an axial length larger than the effective diameter thereof, characterized by the presence of an intermediate ring positioned between two bar lenses for extracting the effective beam emerging from the first bar lens and entering the second bar lens and providing a determined light intensity distribution on the projection plane.
摘要翻译：一种投影装置，具有在与光轴垂直的平面中的多个元件透镜系统的阵列，每个元件透镜系统各自轴向设置有两个长度大于其有效直径的杆状透镜，其特征在于，存在位于两个用于提取从第一条形透镜出射并进入第二条形透镜的有效光束并在投影平面上提供确定的光强度分布。

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