专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090168827A1 Nitride semiconductor laser chip and method of fabricating same 审中-公开
标题翻译：氮化物半导体激光芯片及其制造方法
公开(公告)号：US20090168827A1
公开(公告)日：2009-07-02
申请号：US12318237
申请日：2008-12-23
申请人： Toshiyuki Kawakami , Takeshi Kamikawa , Kentaro Tani
发明人： Toshiyuki Kawakami , Takeshi Kamikawa , Kentaro Tani
IPC分类号： H01S5/00 , H01L21/02
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/2201 , H01S5/34333
摘要： A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L1 away from the light emission mirror facet. The thickness d of the p-side ohmic contact and the distance L1 from the p-side ohmic contact to the light emission mirror facet are adjusted such that the amount of current injected into the light emission mirror facet is 20% or more but 70% or less of the amount of current injected into an area directly below the p-side pad contact.
摘要翻译：提供了一种氮化物半导体激光器芯片，其不仅可以提高其COD水平，而且可以防止其I-L特性曲线急剧上升，并且可以降低工作电压。氮化物半导体激光器芯片包括构成氮化物半导体层并形成在n型GaN衬底上的层，包括发光镜面和光反射镜面的镜面，形成在上接触层上的p侧欧姆接触到到达镜面和在远离发光镜面的距离L1的区域中形成的p侧焊盘触点。调整p侧欧姆接触的厚度d和从p侧欧姆接触到发光镜面的距离L1，使得注入发光镜面的电流量为20％以上且70％或更少的注入到p侧焊盘触点正下方的区域的电流量。

2. 发明授权

US08358675B2 Nitride semiconductor laser device and wafer 有权
标题翻译：氮化物半导体激光器件和晶圆
公开(公告)号：US08358675B2
公开(公告)日：2013-01-22
申请号：US12801800
申请日：2010-06-25
申请人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
发明人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
IPC分类号： H01S3/097
CPC分类号： H01S5/06226 , G11B7/127 , G11B7/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/2222 , H01S5/32341
摘要： Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
摘要翻译：提供了一种减小电容以获得更好响应的氮化物半导体激光器件。氮化物半导体激光器件包括：有源层; 层叠在有源层上的上包层; 层叠在上包层上方的低介电常数绝缘膜; 以及堆叠在低介电常数绝缘膜之上的焊盘电极。

3. 发明申请

US20110317733A1 Nitride semiconductor laser chip and method of fabrication thereof 有权
标题翻译：氮化物半导体激光芯片及其制造方法
公开(公告)号：US20110317733A1
公开(公告)日：2011-12-29
申请号：US13067747
申请日：2011-06-23
申请人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
发明人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
IPC分类号： H01S5/22 , H01L33/32 , H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0655 , H01S5/22 , H01S5/3063 , H01S5/3211 , H01S2301/176
摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.
摘要翻译：以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。脊部的脊宽度为2μm以上且6μm以下。

4. 发明授权

US07928460B2 Light emitting element and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07928460B2
公开(公告)日：2011-04-19
申请号：US12314214
申请日：2008-12-05
申请人： Toshiyuki Kawakami , Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Toshiyuki Kawakami , Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01L33/10 , H01L33/16
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0281 , H01S5/0282 , H01S5/2201 , H01S5/34333
摘要： In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the −c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the −c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
摘要翻译：在使用六方晶体结构的氮化物半导体的激光芯片1中，使用-c面作为第一谐振器面A，其是发射光的激光芯片1的一侧。在第一谐振器面A上，即在-c平面上形成刻面保护膜14。这确保了第一谐振器面A和小面保护膜14之间的牢固的接合，并且减轻了第一谐振器面A的劣化。

5. 发明申请

US20090200573A1 Light emitting element and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20090200573A1
公开(公告)日：2009-08-13
申请号：US12314214
申请日：2008-12-05
申请人： Toshiyuki Kawakami , Yoshinobu Kawaguchi , Takeshi Kamikawa
发明人： Toshiyuki Kawakami , Yoshinobu Kawaguchi , Takeshi Kamikawa
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0281 , H01S5/0282 , H01S5/2201 , H01S5/34333
摘要： In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the −c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the −c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
摘要翻译：在使用六方晶体结构的氮化物半导体的激光芯片1中，使用-c面作为第一谐振器面A，其是发射光的激光芯片1的一侧。在第一谐振器面A上，即在-c平面上形成刻面保护膜14。这确保了第一谐振器面A和小面保护膜14之间的牢固的接合，并且减轻了第一谐振器面A的劣化。

6. 发明授权

US08379682B2 Nitride semiconductor laser chip and method of fabrication thereof 有权
标题翻译：氮化物半导体激光芯片及其制造方法
公开(公告)号：US08379682B2
公开(公告)日：2013-02-19
申请号：US13067747
申请日：2011-06-23
申请人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
发明人： Kentaro Tani , Toshiyuki Kawakami , Yoshihiko Tani
IPC分类号： H01S3/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0655 , H01S5/22 , H01S5/3063 , H01S5/3211 , H01S2301/176
摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.
摘要翻译：以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。脊部的脊宽度为2μm以上且6μm以下。

7. 发明申请

US20130022071A1 NITRIDE SEMICONDUCTOR LASER DEVICE AND WAFER 有权
标题翻译：氮化物半导体激光器件和波形
公开(公告)号：US20130022071A1
公开(公告)日：2013-01-24
申请号：US13629998
申请日：2012-09-28
申请人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
发明人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
IPC分类号： H01S5/02
CPC分类号： H01S5/06226 , G11B7/127 , G11B7/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/2222 , H01S5/32341
摘要： A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
摘要翻译：本文提供了一种降低电容以获得更好响应的氮化物半导体激光器件。氮化物半导体激光器件包括：有源层; 层叠在有源层上的上包层; 层叠在上包层上方的低介电常数绝缘膜; 以及堆叠在低介电常数绝缘膜之上的焊盘电极。

8. 发明申请

US20100329294A1 Nitride semiconductor laser device and wafer 有权
标题翻译：氮化物半导体激光器件和晶圆
公开(公告)号：US20100329294A1
公开(公告)日：2010-12-30
申请号：US12801800
申请日：2010-06-25
申请人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
发明人： Kentaro Tani , Yoshihiko Tani , Toshiyuki Kawakami
IPC分类号： H01S5/323
CPC分类号： H01S5/06226 , G11B7/127 , G11B7/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/2222 , H01S5/32341
摘要： Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
摘要翻译：提供了一种减小电容以获得更好响应的氮化物半导体激光器件。氮化物半导体激光器件包括：有源层; 层叠在有源层上的上包层; 层叠在上包层上方的低介电常数绝缘膜; 以及堆叠在低介电常数绝缘膜之上的焊盘电极。

9. 发明授权

US07199398B2 Nitride semiconductor light emitting device having electrode electrically separated into at least two regions 有权
标题翻译：氮化物半导体发光器件具有电分离成至少两个区域的电极
公开(公告)号：US07199398B2
公开(公告)日：2007-04-03
申请号：US10719739
申请日：2003-11-20
申请人： Tomoki Ono , Shigetoshi Ito , Toshiyuki Okumura , Hirokazu Mouri , Kyoko Matsuda , Toshiyuki Kawakami , Takeshi Kamikawa , Yoshihiko Tani
发明人： Tomoki Ono , Shigetoshi Ito , Toshiyuki Okumura , Hirokazu Mouri , Kyoko Matsuda , Toshiyuki Kawakami , Takeshi Kamikawa , Yoshihiko Tani
IPC分类号： H01L29/10 , H01L29/22 , H01L21/00 , H01S3/097
CPC分类号： H01L33/38 , H01L33/32 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.
摘要翻译：氮化物半导体发光器件至少包括衬底，由主要包含In和Ga的氮化物半导体形成的有源层，p电极和n电极。 p电极和n电极中的至少一个电分离成至少两个区域。

10. 发明申请

US20130038938A1 OPTICAL COMPONENT AND OPTICAL MODULE 审中-公开
标题翻译：光学元件和光学模块
公开(公告)号：US20130038938A1
公开(公告)日：2013-02-14
申请号：US13548756
申请日：2012-07-13
申请人： Toshiyuki Kawakami , Takeshi Kamikawa
发明人： Toshiyuki Kawakami , Takeshi Kamikawa
IPC分类号： G02B5/28 , H01S5/02 , G02B1/10
CPC分类号： G02B27/0006 , G02B1/10 , G02B1/105 , H01S5/005 , H01S5/02296 , H01S5/028 , H01S5/0282
摘要： An optical component emits or transmits laser light of a wavelength of 460 nm or less, and a first coating formed from a dielectric film is applied upon at least a part of the surface thereof, and a second coating B formed from a dielectric film containing a noble metal or platinum group element is applied upon the first coating.
摘要翻译：光学部件发射或透射波长为460nm以下的激光，并且在其表面的至少一部分上施加由电介质膜形成的第一涂层，并且将第二涂层B由包含贵金属或铂族元素在第一次涂覆时施加。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式